ID2005半桥式mos驱动芯片-单相无刷直流电机驱动芯片-骊微电子

1、ChipownID2005High-Side & Low-Side Gate Drive IC深圳市骊微电子科技有限公司芯朋微（安趋）代理商General descriptionThe ID2005 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel pow

2、er MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Applicationl Small and medium-power motor

3、 driverl Power MOSFET or IGBT driverl Half-Bridge Power Convertersl Full-Bridge Power Convertersl Any Complementary Drive ConvertersFeaturesl Fully operational to+200 Vl 3.3V and 5V input logic compatiblel dV/dt Immunity 50 V/nsecl Gate drive supply range from 6 V to 18 Vl Typically output Source/Si

4、nk current capability 1A/1Al Typically -9V negative Vs bias capabilityVCCVBHINHO ID2005LINVSCOMLO18273645Package/Order InformationOrder codePackageID2005SEC-R1SOP8RBBSDCBS345MCU1VDC, up to 200V21 VCCVB 815VQ1Q3Q52 HINHO 7ID2005M3LINVS 6Q2Q4Q64 COMLO 5IF U IF V IF W Rcs URcs VRcs WTypical CircuitNote

5、 1: RB value suggest 10 ohms, ultra fast recovery or schottky diode should be used as BSDNote 2: CBS value according to PWM control conditionNote 3: Driver circuit should be adjust according to the MOSFETs be usedNote 4: Pull down resistor between Gate and Source of MOSFETs, 10k ohms is suggestedNot

6、e 5: Resistors between HIN/LIN and MCU, recommended value is 100 to 1k ohmsFunction Timing DiagramLINHIN LOHOFig.1 Input and output timing waveformHINLIN50%5V50%0Vton toff90%15VHO/LO10%0VtrtfFig.2 Propagation and Rise/Fall time definitionHIN50%50%LIN 5V0V15VLOHO10%0VMTMT90%15VLOHO0VFig.3 Delay match

7、ing definitionPackage InformationD hA3A2A0.25A1 L L1bb1E1 Ec1 cBASE METAL WITH PLATING SECTION B-B b e BBNote：Y：Year Code；WW：Week Code；XXXXX：Internal CodeSOP8 Package Outlines and DimensionsSize SymbolMin.（mm）Typ.（mm）Max.（mm）SizeSymbolMin.（mm）Typ.（mm）Max.（mm）A-1.75D4.704.905.10A10.10-0.225E5.806.006

8、.20A21.301.401.50E13.703.904.10A30.600.650.70e1.27BSCb0.39-0.48h0.25-0.50b10.380.410.43L0.50-0.80c0.21-0.26L11.05BSCc10.190.200.210-8Top markPackageiDR. ID2005YWWXXXXXSOP8Notes:1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.Important

9、NoticeWuxi Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liability arising out of the application or use of any its produc