表面和界面分析ppt课件

1、快速进样室分析室X 光源超高真空系统能量分析器计算机系统离子源6005004003002001000结合能/eV计数/ 任意单位Al 2pAl 2sC 1sN 1sTi 2pO 1sTi(CN)X/Al 薄膜从上图可见，在薄膜表面主要有Ti, N, C, O和Al元素存在。Ti, N的信号较弱，而O的信号很强。这结果表明形成的薄膜主要是氧化物，氧的存在会影响Ti(CN)x薄膜的形成 niiiiiiwtiAcAcc1288286284282280278Surface20 min40 min60 min有机碳285.0 eV金属碳化物280.8 eV 结合能 / eV计数 / 任意单位PZT薄膜中

2、碳的化学价态谱 在PZT薄膜表面，C 1s的结合能为285.0 eV和281.5eV，分别对应于有机碳和金属碳化物。有机碳是主要成分，可能是由表面污染所产生的。随着溅射深度的增加，有机碳的信号减弱，而金属碳化物的峰增强。这结果说明在PZT薄膜内部的碳主要以金属碳化物存在。 图18.4变角XPS示意图 图18.5 Si3N4表面SiO2污染层的变角XPS谱294292290288286284282结合能 / eV计数 / 任意单位石墨碳纳米管C 60 284.75 284.6x 10 x 5x 5图18.6是几种碳纳米材料的C 1s峰和携上峰谱图 240250260270280俄歇动能/ eVE

3、nergy eV计数 / 任意单位242.2ABCD240.0245.8A: C60B: 碳纳米管C: 石墨D: 金刚石263.4267.0268.5266.8图16.7是几种纳米碳材料的XAES谱 302520151050结合能 / eV计数 / 任意单位ABCA: C60B: 碳纳米管C: 石墨Au/Si3N4体系电迁移前后Si 2p的ADXPS谱图 原始膜 b. 电场作用5min后 Au/Si3N4体系电迁移前后Au 4f的ADXPS谱图a. 原始膜 b. 电场作用5min后 原始膜 b. 电场作用5min后 294292290288286284282C60 filmLow densit

4、y Ar+ beam3 KeV, 30 minHigh density Ar+ beam3 KeV, 30 minBinding Energy eVCounts a.u.284.3284.7Figure 1x 5The XPS C 1s Spectra of C60 film during irradiation of Ar Ion2824201612840Binding Energy eVCounts a.u.Figure 2DCBA9.6 eV22.6 eVThe XPS VB Spectra of C60 film during irradiation of Ar IonA: C60 f

5、ilmB: weak ion beam C: strong ion beam, 30min D: 210 min234240246252258264270276282ABCKinetic Energy eVCounts a.u.Figure 3265.5267.4The XPS C KLL Spectra of C60 film during irradiation of Ar IonA: C60 B: Spt. 30 minC: spt. 210 min 296294292290288286284282Binding Energy eVCounts a.u.Nanotubex 5Spt. 3

6、0 minSpt. 210 min284.75284.6Figure 6The C 1s spectra of Carbon nanotube during irradiation of Ar Ion 3020100Binding Energy eVCounts a.u.ABCB: NanotubeC: Spt. 30 minD: Spt. 210 min9.6 eV22.6 eVDA: GraphiteFigure 8The XPS VB spectra of carbon nanotube during irradiation of Ar ion beam 240250260270280A

7、BCDKinetic Energy eVCounts a.u.266.3 267.9Figure 8242.2 eVThe XAES C KLL spectra of carbon nanotube during irradiation of Ar ionA: graphite B: carbon nanotube c: spt. 30 min D: spt. 210 min 350345340335330335.1pure Pd335.5free Pd336.4PdOpure PdPd in TiO2 H2 reductionPd in TiO2Binding Energy (eV)Coun

8、ts (a.u.)325320315310Kinetic Energy (eV)Counts (a.u.)PtTiO2 filmPtTiO2 filmH2 reduction573K 1hour314.7pure Pt氢还原前后掺Pd TiO2薄膜的Pd 3d 谱 氢还原前后掺Pt TiO2薄膜的Pt 3d谱 810800790780770B / eVsputtered 4 nmsurfaceCoOCo3O4779.7 eVLaCoO3 filmE(A)170165160B / eV167.3 eV169.2 eVEsurfacesputtered 4 nm(B)466464462460458

9、456Binding energy / eVCounts / a.u.458.7 eV457.0 PZT/Pt(140)/SiSpt.60 minPZT/Si sampleSpt. 60 min288286284282280278PZT/SiSurfacePZT/Si20 minPZT/Si60 minCarbon285.0 eVTiCx280.8 eVBinding Energy / eVCounts / a.u.PZT/Pt(140)/Sisample, 20 min1081061041021009896PZT/SiSurfacePZT/Si20 minPZT/Si60 min103.2 eVSiO298.0 eVTiSixBinding Energy / eVCounts / a.u.x 5PZT/Pt(140)/Si20 min9659