摩尔定律和超越摩尔定律

1、Student Number:M201472140 Name:辛超lMoores Law and the tendency of CMOS scalinglThe problem Moores Law and COMS scaling meetslMTM or othersWhats the Moores Law? Moores Law observation that ,over the history of computing hardware the number of transistors on integrated circuit doubles every two years.

2、l Describes a driving force of technological and social change in the late 20th and early 21st centuries.l The period is often quoted as 18 months because of Intel executive David House, who predicted that chip performance would double every 18 months Gordon Moores original graph from 1965The tenden

3、cy of semiconductors development The graphs tell us that the change tend of the degree of integration follow the Moores Law. At the same time,we can find that the feature size become small.In another weRd,enlargement of the degree of integration due to narrowof devices. Feature size change with time

4、yearyearSize(Size(m)m)20010.1820030.1520050.1320070.120090.0720110.05 Feature size with yearsTransistor density：promote2timesTransistor witching speed：promote more than 20%Transistor witch power：reduce more than 30%Source- drain leakage power ：reduce more than5timesGate oxide leakage power：reduce mo

5、re than10times19801990200020100.010.0030.030.10.313ASICsFirst generation VLSI systemNew VLSI systemAdvanced technologyMOSLimit of MOS QED yearsize/umSubstrateGateSourceDrainGate stack Tunneling current IOFF Gate depletion EOT Source/DrainParasitic resistance Doping level, abruptness Channel/Drain Su

6、rface scattering - mobility High E-field - mobility DIBL drain to source leakage IOFF Subthreshold slope ln(10)kT/q IOFF VG - VT decrease ION Power S/D leakage current Gate leakage current We can see that COMS scaling meets choke point with the re-duce of size. whats the problem CMOS scaling meet?In

7、tel repors:At gate lengths of 20 & 15 nm, the devices still have excellent device characteristics, but off-state leakage and gate leakage do increase.At 10 nm gate lengths, the transistors continue to function as MOS devices but they limited by off-state leakageTransistor off-state leakage vs gate l

8、engthPhysics limitlQuantum effect：when the size become extremely small we have to consider the quantum effect. That break the mechanics of the transistor.lThermal effect: with the large degree ofintegration ,more heat is made .so IC need more energy and the heat reduce devices performance .lHigh ele

9、ctric field: extreme small size lead low voltage create high electric field. It can destroy the mechanics of the devices The result of high heat Two ways for us lMore moore(scaling)： 1.geometry scaling :go on reduce the size on the logical memory at the horizontal direction and vertical directions 2

10、. Equivalent scaling: Improved three-dimensional device structures and other new materials or none geometry technologylMore than Moore()added value to devices is provided by incorporating functionalities that do not necessarily scale according to Moores Law“.lBeyond CMOS (beyond silicon basic)New de

11、vices model contains new principle and new materials or structuresExample of More moore New structureNew technologyGate(Au)From the examples above ,we can see that there are too many means to improve the performance of semiconductor device and get over the shortage of the traditional technologies.However the most