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1、Group MeetingDong-Ming Fang April 18, 2021Work in the last two weeksCompleted 1Read 2Read 3Read 4Downloaded 5Conceiving 6Work in the last two weeks Completed PPT file for oral speechIn EnglishProper ContentsAbout 35 PagesWork in the last two weeks Thesis draft written by Design 1.Fabrication 2.Measu

2、red 3.Work in the last two weeks Processes Information StoragePECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: PolySi, SiO2,Si3N4Si Oxidation:HO,O2,H2OMembraneIon Injection:As+,P+,B+,BF2+ Diffusion: P+,B+AdjustingICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, Si

3、O2,Solutions: KOH, BHF, HF, H3PO4EtchingAnode (electrostatic), Au-Si, hotBondingWork in the last two weeks 1. Silicon Microfabrication : . 2. MEMS Reliability: . 3. NSFC Requisition : . 4. Other: Published papers of IME References and PPT files Work in the last two weeks Safety and Operation Handboo

4、kSafetyExit, Fire extinguisher, Shower equipment, Eye bath systemMSDSHealth hazard, Fire hazard, Specific hazard, ReactivityEtching Room600m2，Etching platform, Shelf, Reagent chemicalsFuture work in the next weekSimulate .Read Learn Work in the last weekPassed the 1 Read references 2Simulated and an

5、alyzed 3 Design the fabrication 4Work in the last weekTuning linearityOutput powerFrequency pullingTuning sensitivityFrequencyrangeHarmonic rejectionFrequency pushingThe main performance figures .Work in the last month 2. 学习.仿真 1. 查阅文献 4. 进实验室. 3. 工艺制作流程Work in the last month实验相关 曝光显影 电镀 甩胶烘胶 正胶AZ P

6、4903Work in the last month用. 大概15umWork in the last two weeks电镀工程申请申请的准备3.会议投稿124Work in the last two weeks稀释HF溶液HF 0.4mol/L，腐蚀速率：室温100nm/s，32度时200nm/sHF 2.6mol/LHNO3 2.2mol/L32度时300nm/sTi湿法腐蚀50:1:1 H2O:HF:HNO320:1:1H2O:HF:H2O21:1:20HF:H2O2:HNO3Work in the last two weeksI2 0.09mol/LKI 0.6mol/L腐蚀速率：室

7、温8-15nm/sAu湿法腐蚀1:2:1 0I2:KI:H2O25g：7g：100mlBr2:KI:H2O 1:2:3HF:HAc:HNO3Work in the last two weeks国家基金对工程的要求越来越高根底性前瞻性战略性强调原创性提高交叉工程的强度和比例强调学科交叉Work in the last two weeks研究实力写作技巧创新思想一新遮百丑基金有多种手段保护创新思想以往的研究积累和研究水平准确、清晰、具体、可行的研究方案申请基金的三要素Work in the last two weeks申请书的核心问题创新性重要性实用性连续性可行性科学选题做什么What-问题的提出

8、为什么Why-意义分析怎么做How-技术路线立项依据工作积累实验条件人才梯队支持条件Work in the last two weeks立项依据阐述工程对社会或经济的意义1本工程国内外进展情况2提出本工程解决的目标3强调工程的必要性和重要性4Work in the last two weeks 研究目标1 研究内容2 拟解决的关键问题3 充分反映特色和创新点4 预期成果5研究方案Work in the last two weeks支持条件以往研究的积累1研究者的水平和专长2研究所需的设施和设备3合作研究4Work in the last two weeks题目、内容摘要、主题词研究组组成年度方

9、案及预期进展申请经费的额度和预算专家和单位的推荐意见 1 2 3 4 5 其它内容Work in the last two monthsPECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: PolySi, SiO2,Si3N4Si Oxidation:HO,O2,H2O薄膜工艺Ion Injection:As+,P+,B+,BF2+ Diffusion: P+,B+调整参数ICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, SiO2,

10、Solutions: KOH, BHF, HF, H3PO4刻蚀工艺Anode (electrostatic), Au-Si, hot键合工艺微电子所工艺信息库Work in the last two monthsMEMS和IC的关键性差异IC无可动部件，而MEMS 器件可以产生某种运动IC依靠其外表之下的各种效应来工作，而MEMS 根本上是靠外表效应工作的器件IC本质上是平面化的，MEMS一般来说却不是Work in the last two monthsMEMS的优势集成化微型化多功能低本钱高性能低功耗Work in the last two months.组件层面.系统层面.元件层面.技

11、术层面Work in the last two months.加工技术加工技术加工技术Work in the last two months悬空结构模片沟、槽单晶硅多晶硅键合技术微电子所四个体硅标准工艺机械性能好 几何尺寸大浪费硅材料与IC兼容不好各向同性腐蚀各向异性腐蚀体微加工Work in the last two months外表微加工两层多晶硅外表微加工北大微电子所三层多晶硅外表微加工Berkley SA中心，PolyMUMPs五层多晶硅外表微加工美国Sandia国家实验室两层MEMS结构：一层是结构材料,另一层为地面材料 多晶硅作为结构层，淀积PSG作为牺牲层，氮化硅作为电隔离层两层

12、主要的薄膜层，结构层：多晶硅，牺牲层：二氧化硅Work in the last two monthsLIGA技术LIGA技术准LIGA技术SLIGA技术 电镀( Galvanoformung) 压模(Abformung) 光刻(Lithographie) Work in the last two months衬底必须是导体或涂有导电材料1能实现大深宽比结构2材料广泛3制作高精度复杂图形4易于大批量生产5不适合制作多层结构6LIGA技术特点Work in the last two months硅/硅键合1、灵活性和半导体工艺兼容性2、温度在键合过程中起着关键的作用3、硅片外表的平整度和清洁度 硅

13、/玻璃键合1、两静电键合材料的热膨胀系数近似匹配2、阳极的形状影响键合效果3、外表状况对键合力也有影响金属/玻璃键合1、电压、温度和外表光洁度影响键合反响2、离子扩散阳极氧化影响键合3、键合界面处产生过渡层键合技术键合技术可以将外表加工和体加工有机地结合在一起Work in the last two months三维MEMS结构加工中的材料结构材料：硅、玻璃、半导体材料牺牲层材料电绝缘材料功能材料：压电材料磁致伸缩材料形状记忆合金Work in the last two months金属：如Ti，Al，Cu，Cr 等非金属：二氧化硅、氮化硅、碳化硅和磷硅玻璃等有机物和聚合物：如光刻胶，聚酰亚胺

14、、PMMA、SU-8等牺牲层材料Work in the last two monthsBCA前CMOS (pre-CMOS) 混合CMOS( intermediate-CMOS) 后CMOS(post-CMOS) CMOS-MEMS技术：将MEMS局部和CMOS电路做在同一块衬底上 一种是在CMOS结构层上面再淀积一层结构层的微加工 另一种是直接以CMOS原有的结构层作为MEMS结构层的微加工 Work in the future 2. 考虑 1. 完成 3. 制作 4. 加工Work in the last two weeks Attend 08MEMS training01 Write S

15、C-JRP application02Write application03Design the 04Work in the last two weeksWrite SC-JRP applicationInput Chinese and English version1Contact with Vincent of NUS2The joint unit not Univ., but A*STAR3Cooperation failed, but be trained4Work in the last two weeksWrite .Proposal TitleComplex面向Work in t

16、he last two weeks. Aims and SignificanceMain objectives ApplicationsNovelty MethodologyWork in the last two weeksThe Develop Current Fabricate .Aims and SignificanceWork in the last two weeksMain Objectivesinvestigate .study realize set up Work in the last two weeksApplicationsMultiband Integration

17、High .RWork in the last two weeksNoveltyCurrent researchMost .This proposalInvestigate . Work in the last two weeksMethodologySSS Single wafer Measure .Step2Step3Step4 Optimize Simulate . Silicon-based Traditional . Polymer Develop . Integrate switches . Test Modify Set upStep1DesignWork in July and in this termFinished 1S