晶圆制造专题知识专业知识讲座课件

CrystalStructuresAmorphousNorepeatedstructureatallPolycrystallineSomerepeatedstructuresSinglecrystalOnerepeatedstructure2023/1/11CrystalStructuresAmorphous202AmorphousStructure2023/1/12AmorphousStructure2022/12/282PolycrystallineStructureGrainGrainBoundary2023/1/13PolycrystallineStructureGrainSingleCrystalStructure2023/1/14SingleCrystalStructure2022/1WhySilicon?Abundant,cheapSilicondioxideisverystable,strongdielectric,anditiseasytogrowinthermalprocess.Largebandgap,wideoperationtemperaturerange.2023/1/15WhySilicon?Abundant,cheap202Source:http://www.shef.ac.uk/chemistry/web-elements/nofr-key/Si.html2023/1/16Source:http://www.shef.ac.uk/UnitCellofSingleCrystalSilicon2023/1/17UnitCellofSingleCrystalSiCrystalOrientations:<100>xyz<100>plane2023/1/18CrystalOrientations:<100>xyCrystalOrientations:<111>xyz<100>plane<111>plane2023/1/19CrystalOrientations:<111>xyCrystalOrientations:<110>xyz<110>plane2023/1/110CrystalOrientations:<110>xy<100>OrientationPlaneAtomBasiclatticecell2023/1/111<100>OrientationPlaneAtomBas<111>OrientationPlaneSiliconatomBasiclatticecell2023/1/112<111>OrientationPlaneSiliconIllustrationofthePointDefectsSiliconAtomImpurityonsubstitutionalsiteFrenkelDefectVacancy(空位)orSchottkyDefectImpurityinInterstitialSiteSiliconInterstitial間隙2023/1/113IllustrationofthePointDefeDislocationDefects2023/1/114DislocationDefects2022/12/281FromSandtoWaferQuartzsand:silicondioxideSandtometallicgradesilicon(MGS)ReactMGSpowderwithHCltoformTCSPurifyTCSbyvaporizationandcondensationReactTCStoH2toformpolysilicon(EGS)MeltEGSandpullsinglecrystalingot2023/1/115FromSandtoWaferQuartzsand:FromSandtoWafer(cont.)Cutend,polishside,andmakenotchorflatSawingotintowafersEdgerounding,lap,wetetch,andCMPLaserscribeEpitaxydeposition2023/1/116FromSandtoWafer(cont.)Cut晶圓形成之步驟

FromSandtoSilicon

Heat(2000°C)SiO2

+2C

®

Si+2CO

SandCarbonMGSCarbonDioxideMGS(poly-silicon)with98%purity(1)首先由石英砂提煉成冶金級多晶矽

2023/1/117晶圓形成之步驟

FromSandtoSiliconSiliconPurificationISi+HClTCS(vapor)

SiliconPowderHydrochlorideFiltersCondenserPurifierPureTCS(liquid)with99.9999999%Reactor,300C2023/1/118SiliconPurificationISi+HClPolysiliconDeposition,EGS

Heat(1100°C)SiHCl3+H2

®

Si+3HCl

TCS(liquid)HydrogenEGSHydrochlorideEGS(Electronic-gradeSilicon)isalsopoly-silicon2023/1/119PolysiliconDeposition,EGSSiliconPurificationIILiquidTCSH2CarriergasbubblesH2andTCSProcessChamberTCS+H2EGS+HClEGS2023/1/120SiliconPurificationIILiquidElectronicGradeSiliconSource:/semiconductors/_polysilicon.html2023/1/121ElectronicGradeSiliconSourceCrystalPullingMakeasingle-crystalsiliconingotCzochralski(CZ)methodFloatingZone(FZ)method2023/1/122CrystalPullingMakeasingle-cCrystalPulling:CZmethodGraphiteCrucibleSingleCrystalsiliconIngotSingleCrystalSiliconSeedQuartzCrucibleHeatingCoils1415°CMoltenSilicon2023/1/123CrystalPulling:CZmethodGraCZCrystalPullersMitsubishMaterialsSiliconSource:/semiconductors/_crystalgrowing.html2023/1/124CZCrystalPullersMitsubishMaCZCrystalPullingSource:/semiconductors/_crystalgrowing.html2023/1/125CZCrystalPullingSource:httpFloatingZoneMethodHeatingCoilsPolySiRodSingleCrystalSiliconSeedCrystalHeatingCoilsMovementMoltenSilicon2023/1/126FloatingZoneMethodHeatingCoComparisonoftheTwoMethodsCZmethodismorepopularCheaperLargerwafersize(300mminproduction)ReusablematerialsFloatingZonePuresiliconcrystal(nocrucible)Moreexpensive,smallerwafersize(150mm)Mainlyforpowerdevices.2023/1/127ComparisonoftheTwoMethodsCIngotPolishing,Flat,orNotchFlat,150mmandsmallerNotch,200mmandlarger2023/1/128IngotPolishing,Flat,orNotcWaferSawingOrientationNotchCrystalIngotSawBladeDiamondCoatingCoolantIngotMovement2023/1/129WaferSawingOrientationNotchCParametersofSiliconWaferWaferSize(mm)Thickness(mm)Area(cm2)Weight(grams)27920.261.3238145.614.0510052578.659.67125625112.7217.87150675176.7227.82200725314.1652,98300775706.21127.6250.8(2in)76.2(3in)2023/1/130ParametersofSiliconWaferWafWaferEdgeRounding(邊緣圓滑化)WaferWafermovementWaferBeforeEdgeRoundingWaferAfterEdgeRounding2023/1/131WaferEdgeRounding(邊緣圓滑化)WafWaferLapping(粗磨拋光)Roughpolishedconventional,abrasive,slurry-lappingToremovemajorityofsurfacedamageTocreateaflatsurface2023/1/132WaferLapping(粗磨拋光)RoughpoliWetEtchRemovedefectsfromwafersurface4:1:3mixtureofHNO3(79wt%inH2O),HF(49wt%inH2O),andpureCH3COOH.Chemicalreaction:3Si+4HNO3+18HF3H2SiF6+4NO+8H2O2023/1/133WetEtchRemovedefectsfromwaChemicalMechanicalPolishing(CMP)SlurryPolishingPadPressureWaferHolderWafer2023/1/134ChemicalMechanicalPolishing200mmWaferThicknessandSurfaceRoughnessChanges76mm914mmAfterWaferSawingAfterEdgeRounding76mm914mm12.5mm814mm<2.5mm750mm725mmVirtuallyDefectFreeAfterLappingAfterEtchAfterCMP2023/1/135200mmWaferThicknessandSurEpitaxyGrow(磊晶成長)DefinitionPurposesEpitaxyReactorsEpitaxyProcess2023/1/136EpitaxyGrow(磊晶成長)Definition2Epitaxy:DefinitionGreekoriginepi:upontaxy:orderly,arrangedEpitaxiallayerisasinglecrystallayeronasinglecrystalsubstrate.2023/1/137Epitaxy:DefinitionGreekorigiEpitaxy:PurposeBarrierlayerforbipolartransistorReducecollectorresistancewhilekeephighbreakdownvoltage.Onlyavailablewithepitaxylayer.ImprovedeviceperformanceforCMOSandDRAMbecausemuchloweroxygen,carbonconcentrationthanthewafercrystal.2023/1/138Epitaxy:PurposeBarrierlayerEpitaxyApplication,BipolarTransistorn-Epipn+n+P-substrateElectronflown+BuriedLayerp+p+SiO2Al•Cu•SiBaseCollectorEmitter2023/1/139EpitaxyApplication,BipolarTEpitaxyApplication:CMOSP-WaferN-WellP-WellSTIn+n+USGp+p+Metal1,Al•CuBPSGWP-typeEpitaxySilicon2023/1/140EpitaxyApplication:CMOSP-WafSingleCrystalSiliconEpitaxialLayerUseChemicalVaporDeposition(CVD)ChoosegasphaseepitaxyCanbedopedusingdopantgassource2023/1/141SingleCrystalSiliconEpitaxiSiliconSourceGasesSilane

SiH4Dichlorosilane DCS SiH2Cl2Trichlorosilane TCS SiHCl3Tetrachlorosilane SiCl42023/1/142SiliconSourceGasesSilane DopantSourceGasesDiborane B2H6Phosphine PH3Arsine AsH32023/1/143DopantSourceGasesDiborane DCSEpitaxyGrow,ArsenicDoping

Heat(1100°C)SiH2Cl2

®

Si+2HClDCS EpiHydrochlorideAsH3®As+3/2H2

Heat(1100°C)2023/1/144DCSEpitaxyGrow,ArsenicDopiSchematicofDCSEpiGrowandArsenicDopingProcessSiH2Cl2SiAsH3AsAsH3HHClH22023/1/145SchematicofDCSEpiGrowandEpitaxialSiliconGrowthRateTrendsGrowthRate,micron/min1000/T(K)Temperature(°C)1.01.10.010.020.01.01300120011001000900800700SiH4SiH2Cl2SiHCl3SurfacereactionlimitedMasstransportlimited2023/1/146EpitaxialSiliconGrowthRateBarrelReactor

RadiationHeatingCoilsWafers2023/1/147BarrelReactor

RadiationHeatiVerticalReactorHeatingCoilsWafersReactantsReactantsandbyproducts2023/1/148VerticalReactorHeatingCoilsWHorizontalReactorHeatingCoilsWafersReactantsReactantsandbyproducts2023/1/149HorizontalReactorHeatingCoilEpitaxyProcess,BatchSystemHydrogenpurge,temperaturerampupHClcleanEpitaxiallayergrowHydrogenpurge,temperaturecooldownNitrogenpurgeOpenChamber,waferunloading,reloading2023/1/150EpitaxyProcess,BatchSystemHSingleWaferReactorHydrogenambientCapableformultiplechambersonamainframeLargewafersize(to300mm)Betteruniformitycontrol2023/1/151SingleWaferReactorHydrogenaSingleWaferReactorHeatingLampsHeatRadiationWaferQuartzWindowReactantsReactants&byproductsQuartzLiftFingersSusceptor2023/1/152SingleWaferReactorHeatingLaEpitaxyProcess,SingleWaferSystemHydrogenpurge,clean,temperaturerampupEpitaxiallayergrowHydrogenpurge,heatingpoweroffWaferunloading,reloadingIn-situHClclean2023/1/153EpitaxyProcess,SingleWaferWhyHydrogenPurgeMostsystemsusenitrogenaspurgegasNitrogenisaverystableabundantAt>1000C,N2canreactwithsiliconSiNonwafersurfaceaffectsepidepositionH2isusedforepitaxychamberpurgeCleanwafersurfacebyhydridesformation2023/1/154WhyHydrogenPurgeMostsystemsPropertiesofHydrogen2023/1/155PropertiesofHydrogen2022/12/DefectsinEpitaxyLayerDislocationStackingFaultfromSurfaceNucleationImpurityParticleHillockStackingFaultformSubstrateStackingFaultAfterS.M.Zse’sVLSITechnologySubstrateEpiLayer2023/1/156DefectsinEpitaxyLayerDislocFutureTrendsLargerwafersizeSinglewaferepitaxialgrowLowtemperatureepitaxyUltrahighvacuum(UHV,to10-9Torr)Selectiveepitaxy2023/1/157FutureTrendsLargerwafersizeSummarySiliconisabundant,cheapandhasstrong,stableandeasygrownoxide.<100>and<111>CZandfloatingzone,CZismorepopularSawing,edging,lapping,etchingandCMP2023/1/158SummarySiliconisabundant,chSummaryEpitaxy:singlecrystalonsinglecrystalNeededforbipolarandhighperformanceCMOS,DRAM.Silane,DCS,TCSassiliconprecursorsB2H6asP-typedopantPH3andAsH3asN-typedopantsBatchandsinglewafersystems2023/1/159SummaryEpitaxy:singlecrystalCrystalStructuresAmorphousNorepeatedstructureatallPolycrystallineSomerepeatedstructuresSinglecrystalOnerepeatedstructure2023/1/160CrystalStructuresAmorphous202AmorphousStructure2023/1/161AmorphousStructure2022/12/282PolycrystallineStructureGrainGrainBoundary2023/1/162PolycrystallineStructureGrainSingleCrystalStructure2023/1/163SingleCrystalStructure2022/1WhySilicon?Abundant,cheapSilicondioxideisverystable,strongdielectric,anditiseasytogrowinthermalprocess.Largebandgap,wideoperationtemperaturerange.2023/1/164WhySilicon?Abundant,cheap202Source:http://www.shef.ac.uk/chemistry/web-elements/nofr-key/Si.html2023/1/165Source:http://www.shef.ac.uk/UnitCellofSingleCrystalSilicon2023/1/166UnitCellofSingleCrystalSiCrystalOrientations:<100>xyz<100>plane2023/1/167CrystalOrientations:<100>xyCrystalOrientations:<111>xyz<100>plane<111>plane2023/1/168CrystalOrientations:<111>xyCrystalOrientations:<110>xyz<110>plane2023/1/169CrystalOrientations:<110>xy<100>OrientationPlaneAtomBasiclatticecell2023/1/170<100>OrientationPlaneAtomBas<111>OrientationPlaneSiliconatomBasiclatticecell2023/1/171<111>OrientationPlaneSiliconIllustrationofthePointDefectsSiliconAtomImpurityonsubstitutionalsiteFrenkelDefectVacancy(空位)orSchottkyDefectImpurityinInterstitialSiteSiliconInterstitial間隙2023/1/172IllustrationofthePointDefeDislocationDefects2023/1/173DislocationDefects2022/12/281FromSandtoWaferQuartzsand:silicondioxideSandtometallicgradesilicon(MGS)ReactMGSpowderwithHCltoformTCSPurifyTCSbyvaporizationandcondensationReactTCStoH2toformpolysilicon(EGS)MeltEGSandpullsinglecrystalingot2023/1/174FromSandtoWaferQuartzsand:FromSandtoWafer(cont.)Cutend,polishside,andmakenotchorflatSawingotintowafersEdgerounding,lap,wetetch,andCMPLaserscribeEpitaxydeposition2023/1/175FromSandtoWafer(cont.)Cut晶圓形成之步驟

FromSandtoSilicon

Heat(2000°C)SiO2

+2C

®

Si+2CO

SandCarbonMGSCarbonDioxideMGS(poly-silicon)with98%purity(1)首先由石英砂提煉成冶金級多晶矽

2023/1/176晶圓形成之步驟

FromSandtoSiliconSiliconPurificationISi+HClTCS(vapor)

SiliconPowderHydrochlorideFiltersCondenserPurifierPureTCS(liquid)with99.9999999%Reactor,300C2023/1/177SiliconPurificationISi+HClPolysiliconDeposition,EGS

Heat(1100°C)SiHCl3+H2

®

Si+3HCl

TCS(liquid)HydrogenEGSHydrochlorideEGS(Electronic-gradeSilicon)isalsopoly-silicon2023/1/178PolysiliconDeposition,EGSSiliconPurificationIILiquidTCSH2CarriergasbubblesH2andTCSProcessChamberTCS+H2EGS+HClEGS2023/1/179SiliconPurificationIILiquidElectronicGradeSiliconSource:/semiconductors/_polysilicon.html2023/1/180ElectronicGradeSiliconSourceCrystalPullingMakeasingle-crystalsiliconingotCzochralski(CZ)methodFloatingZone(FZ)method2023/1/181CrystalPullingMakeasingle-cCrystalPulling:CZmethodGraphiteCrucibleSingleCrystalsiliconIngotSingleCrystalSiliconSeedQuartzCrucibleHeatingCoils1415°CMoltenSilicon2023/1/182CrystalPulling:CZmethodGraCZCrystalPullersMitsubishMaterialsSiliconSource:/semiconductors/_crystalgrowing.html2023/1/183CZCrystalPullersMitsubishMaCZCrystalPullingSource:/semiconductors/_crystalgrowing.html2023/1/184CZCrystalPullingSource:httpFloatingZoneMethodHeatingCoilsPolySiRodSingleCrystalSiliconSeedCrystalHeatingCoilsMovementMoltenSilicon2023/1/185FloatingZoneMethodHeatingCoComparisonoftheTwoMethodsCZmethodismorepopularCheaperLargerwafersize(300mminproduction)ReusablematerialsFloatingZonePuresiliconcrystal(nocrucible)Moreexpensive,smallerwafersize(150mm)Mainlyforpowerdevices.2023/1/186ComparisonoftheTwoMethodsCIngotPolishing,Flat,orNotchFlat,150mmandsmallerNotch,200mmandlarger2023/1/187IngotPolishing,Flat,orNotcWaferSawingOrientationNotchCrystalIngotSawBladeDiamondCoatingCoolantIngotMovement2023/1/188WaferSawingOrientationNotchCParametersofSiliconWaferWaferSize(mm)Thickness(mm)Area(cm2)Weight(grams)27920.261.3238145.614.0510052578.659.67125625112.7217.87150675176.7227.82200725314.1652,98300775706.21127.6250.8(2in)76.2(3in)2023/1/189ParametersofSiliconWaferWafWaferEdgeRounding(邊緣圓滑化)WaferWafermovementWaferBeforeEdgeRoundingWaferAfterEdgeRounding2023/1/190WaferEdgeRounding(邊緣圓滑化)WafWaferLapping(粗磨拋光)Roughpolishedconventional,abrasive,slurry-lappingToremovemajorityofsurfacedamageTocreateaflatsurface2023/1/191WaferLapping(粗磨拋光)RoughpoliWetEtchRemovedefectsfromwafersurface4:1:3mixtureofHNO3(79wt%inH2O),HF(49wt%inH2O),andpureCH3COOH.Chemicalreaction:3Si+4HNO3+18HF3H2SiF6+4NO+8H2O2023/1/192WetEtchRemovedefectsfromwaChemicalMechanicalPolishing(CMP)SlurryPolishingPadPressureWaferHolderWafer2023/1/193ChemicalMechanicalPolishing200mmWaferThicknessandSurfaceRoughnessChanges76mm914mmAfterWaferSawingAfterEdgeRounding76mm914mm12.5mm814mm<2.5mm750mm725mmVirtuallyDefectFreeAfterLappingAfterEtchAfterCMP2023/1/194200mmWaferThicknessandSurEpitaxyGrow(磊晶成長)DefinitionPurposesEpitaxyReactorsEpitaxyProcess2023/1/195EpitaxyGrow(磊晶成長)Definition2Epitaxy:DefinitionGreekoriginepi:upontaxy:orderly,arrangedEpitaxiallayerisasinglecrystallayeronasinglecrystalsubstrate.2023/1/196Epitaxy:DefinitionGreekorigiEpitaxy:PurposeBarrierlayerforbipolartransistorReducecollectorresistancewhilekeephighbreakdownvoltage.Onlyavailablewithepitaxylayer.ImprovedeviceperformanceforCMOSandDRAMbecausemuchloweroxygen,carbonconcentrationthanthewafercrystal.2023/1/197Epitaxy:PurposeBarrierlayerEpitaxyApplication,BipolarTransistorn-Epipn+n+P-substrateElectronflown+BuriedLayerp+p+SiO2Al•Cu•SiBaseCollectorEmitter2023/1/198EpitaxyApplication,BipolarTEpitaxyApplication:CMOSP-WaferN-WellP-WellSTIn+n+USGp+p+Metal1,Al•CuBPSGWP-typeEpitaxySilicon2023/1/199EpitaxyApplication:CMOSP-WafSingleCrystalSiliconEpitaxialLayerUseChemicalVaporDeposition(CVD)ChoosegasphaseepitaxyCanbedopedusingdopantgassource2023/1/1100SingleCrystalSiliconEpitaxiSiliconSourceGasesSilane

SiH4Dichlorosilane DCS SiH2Cl2Trichlorosilane TCS SiHCl3Tetrachlorosilane SiCl42023/1/1101SiliconSourceGasesSilane DopantSourceGasesDiborane B2H6Phosphine PH3Arsine AsH32023/1/1102DopantSourceGasesDiborane DCSEpitaxyGrow,ArsenicDoping

Heat(1100°C)SiH2Cl2

®

Si+2HClDCS EpiHydrochlorideAsH3®As+3/2H2

Heat(1100°C)2023/1/1103DCSEpitaxyGrow,ArsenicDopiSchematicofDCSEpiGrowandArsenicDopingProcessSiH2Cl2SiAsH3AsAsH3HHClH22023/1/1104SchematicofDCSEpiGrowandEpitaxialSiliconGrowthRateTrendsGrowthRate,micron/min1000/T(K)Temperature(°C)1.01.10.010.020.01.01300120011001000900800700SiH4SiH2Cl2SiHCl3SurfacereactionlimitedMasstransportlimited2023/1/1105EpitaxialSiliconGrowthRateBarrelReactor

RadiationHeatingCoilsWafers2023/1/1106BarrelReactor

RadiationHeatiVerticalReactorHeatingCoilsWafersReactantsReactantsandbyproducts2023/1/1107VerticalReactorHeatingCoilsWHorizontalReactorHeatingCoilsWafersReactantsReactantsandbyproducts2023/1/1108HorizontalReactorHeatingCoilEpitaxyProcess,BatchSystemHydrogenpurge,temperatur