半导体工艺中的英语词汇教材

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共模增益Common-modeinput共模输入Common-moderejectionratio(CMRR)共模抑制比Compatibilit兼容性Compensation补偿Compensatedimpurities补偿杂质Compensatedsemiconductor补偿半导体ComplementaryDarlingtoncircu互补达林顿电路ComplementaryMetal-Oxide-SemiconductorField-Effect-TransistCMOS)互补金属氧化物半导体场效应晶体管Complementaryerrorfunctions误差函数Computer-aideddesign(CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/测试/制造CompoundSemiconductor化合物半导体Conductance电导Conductionband（edge）导带（底）Conductionlevel/sta得带态Conductor导体Conductivity电导率Configuration组态Conlomb库仑ConpledConfigurationDevice结构组态Constants物理常数Constantenergysurfac等能面Constant-sourcediffusi恒豌源扩散Contact接触Contamination治污Continuityequatio连续性方程Contact股卜接触孔Contactpotentiaj^9电势Continuityconditi连续性条件Contradoping反掺杂Controlled受控的Converter转换器Conveyer传输器Copperinterconnectionsystem铜互连系统Couping耦合Covalent共阶的Crossover跨交Critica临界的Crossunder穿交Crucible坩埚Crystaldefect/face/orientation/la晶体缺陷/晶面/晶向/晶格Currentdensit电流密度Curvature曲率Cut。£曦止Currentdrift/dirve/shar电流漂移四驱动/共享CurrentSense电流取样Curvature弯曲Customintegratedcircu定制集成电路Cylindrica柱面的Czochralshicrysta直立单晶Czochralski=6m山口口切克劳斯基技术（Cz法直拉晶体J）DDanglingbonds悬挂键Darkcurrent暗电流Deadtime空载时间Debyelength德拜长度De.broglie德布洛意Decderate减速Decibel（dB）分贝Decode译码Deepacceptorleve深受主能级Deepdonorlevel深施主能级Deepimpurity卜丫6深度杂质能级Deeptrap深陷阱Defeat缺陷Degeneratesemiconductor简并半导体Degeneracy简并度Degradation退化DegreeCelsius（centigrad）/Kelvin摄氏/开氏温度Delay延迟Density密度Densityof$=2=喊密度Depletion耗尽Depletionapproximation耗尽近似Depletioncontac耗尽接触Depletiondepth耗尽深度Depletioneffec耗尽效应Depletion3丫6耗尽层DepletionMOS耗尽MOSDepletionregioi耗尽区Depositedfilm淀积薄膜Depositionproces淀积工艺Designrules设计规则Die芯片（复数dice）Diode二极管Dielectri^Y电的Dielectricisolat介质隔离Difference-modeinput差模输入Differentialamplif差1分放大器Differentialcapacitai微e分电容Diffusedjunctio扩散结Diffusionfr^Diffusioncoefficie扩散系数Diffusionconstan扩散常数Diffusivit扩散率Diffusioncapacitance/barrier/current/furjna散电容/势垒/电流/炉DigitalcirciO^电路Dipoledomain偶极畴Dipolelayer禺极层Direct-coupling直妾耦合Direct-gapsemiconductor直接带隙半导体Direct仃2舶1宜面接跃迁Discharge放电Discretecomponent分立元件Dissipation^^Distribution^^Distributedcapacitanc分布电容Distributedmode吩布模型Displacement位移Dislocation立错Domain畴Donor施主Donorexhaustion施主耗尽Dopant掺杂剂Dopedsemiconductor掺杂半导体Dopingconcentration掺杂浓度Double-diffusiveMOS(DMOS)双扩散MOS.0""漂移Driftn6漂移电场Driftmobilit迁移率Dryetching干法腐蚀Dry/wetoxidation干/湿法氧化Dose剂量Dutycycle工作周期Dual-in-linepackage(DIP)双列直插式封装Dynamics动态Dynamiccharacteristic动态属性Dynamicimpedance动态阻抗EEarlyeffect^U效应Earlyfailure期失效Effectivemass有效质量Einsteinrelationship)爱因斯坦关系ElectricEraseProgrammableReadOnlyMemor(E2PROM)一次性电可擦除只读存储器Electrode电极Electrominggratim电迁移Electronaffini电子亲和势Electronic-grad电子能Electron-beamphoto-resistexposu光致抗蚀剂的电子束曝光Electron82$电子气Electron-grade亚2=61电子级纯水Electrontrappingcent电,子俘获中心ElectronVolt(eV)电子伏Electrostati静电的Element元素/元件/配件Elementalsemiconductor元素半导体Ellipse椭圆Ellipso^^^Emitter发射极Emitter-coupled10g发射极耦合逻辑Emitter-coupledpai发射极耦合对Emitterfo11owe射随器Emptyband空带Emittercrowdingeffe(发射极集边(拥挤)效应Endurancetest=lifete寿t命测试Energystate能态Energymomentumdiagram 能量-动量(E-K)图Enhancementmode增强型模式EnhancementMOS增强性MOSEntefic(低)共溶的Environmentaltes1环境测试Epitaxia外延的Epitaxiallay外延层Epitaxialsli外蜒片Expitaxy夕卜延Equivalentcurcui等效电路Equilibriummajority/minority。2=平衡多数/少数载流子ErasableProgrammableROM(EPROM)可搽取(编程)存储器Errorfunctioncomplement(erf)余误差函数Etch刻蚀Etchant刻蚀剂Etchingmask抗蚀剂掩模Excess。2口16过剩载流子Excitation0超「8激发能Excited$=2=激发态Exciton激子Extrapolation外推法Extrinsic非本征的Extrinsicsemiconductc杂质半导体FFace-centered面心立方Falltim下降时间Fan-in扇入Fan-out扇出Fastrecovery快恢复Fastsurfacestate快界面态Feedback反馈Fermilevel费米能级Fermi-DiracDistributi费米-狄拉克分布Femipotentia费米势Fick6口口2打。10克方程(扩散)Fieldeffecttransisit效应晶体管Fieldoxidet氧化层Filledband满带Film薄膜Flashmemory闪烁存储器Flatband平带Flatpack扁平封装Flickernois闪烁(变)噪声Flip-flop9目8触发器翻转Floatinggat浮栅Fluorideetch氟化氢刻蚀Forbiddenband禁带Forwardbias正向偏置Forwardblocking/conductii正向阻断/导通Frequencydeviationnoi频率漂移噪声Frequencyresponse频率响应Function函数GGain增益Gallium-Arsenide(GaAs)砷化钾Gamyrayr射线Gate门、栅、控制极Gateoxide栅氧化层Gauss(ian)高斯Gaussiandistributionprof高斯掺杂分布Generation-recombination产生-复合Geometries几何尺寸Germanium(Ge)锗Graded缓变的Graded(gradual)channel缓变沟道Gradedjunction缓变结Grain晶粒Gradient梯度Grownjunction生长结Guardring保护环Gummel-Poommodel 葛谋-潘模型Gunn-effect狄氏效应HHardeneddevice辐射加固器件Heatofformation形成热Heatsink散热器、热沉Heavy/lightholebandl/g空穴带Heavy$@皿「@宜09重掺杂Hell-effe霍尔效应Heterojunction异质结Heterojunctionstructu异质结结构HeterojunctionBipolarTransisto&T)异质结双极型晶体HighfieldpropertS场特性High-performanceMOS.(H-MOS)高性能MOS.Hormalized归一化Horizontalepitaxialreac卧0r夕卜延反应器Hotcarrio热载流子Hybridintegratio混合集成IImage-force镜象力Impactionizatio碰撞电离Impedance阻抗Imperfectstructur不完整结构Implantationdose注入剂量Implantedion注入离子Impurity杂质Impurityscatterir杂质散射Incrementalresistanc电阻增量(微分电阻)In-contactmask接触式掩模Indiumtinoxide(ITO)铟锡氧化物Inducedchannel感应沟道Infrared红夕卜的InjectiorpiAInputoffsetvoltag输入失调电压Insulator绝缘体InsulatedGateFET(IGFET)绝缘栅FETIntegratedinjection101g成注入逻辑Integration集成、积分Interconnection互连Interconnectiontimedela互连延时Interdigitatedstructu交互式结构Interface界面Interference^^Internationalsystemofunions示单位制Internallyscatter谷间散射Interpolation内插法1册「［^］本征的Intrinsicsemiconduct本征半导体Inverseoperatioi反向工作Inversion反型Inverter倒相器Ion离子Ionbeam离子束Ionetching离子刻蚀Ionimplantatioi离子注入Ionization电离Ionizationenerg电离能IrradiationsIsolationlan隔离岛Isotropic各向同性JJunctionFET(JFET)结型场效应管Junctionisolati结隔离Junctionspacing结间距Junctionside-wal结侧壁LLatchup闭锁Lateral横向的Lattice晶格Layout版图Latticebinding/cell/constant/defect/dist晶格|结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakagecurrent(泄)漏电流Levelshiftir电平移动Lifetime寿命linearit线性度Linkedbond共价键LiquidNitrogen液氮Liquid-phaseepitaxialgrowthtechniq液相夕卜延生长技术Lithography光刻LightEmittingDiod§LED)发光二极管LoadlineorVariab负载线Locatingand川江齿曲局布线Longitudinal纵向的Logicswing逻辑摆幅Lorentz洛沦兹Lumpedmodel集总模型MMajoritycarri多数载流子Mask掩膜板，光刻板Masklevel掩模序号Maskset掩模组Mass-actionla质量守恒定律Master-slaveDflip-flo从D触发器Matching匹配Maxwell麦克斯韦Meanfreepath平均自由程Meanderedemitterjunctio梳状发射极结Meantimebeforefailure(MTBF)平均工作时间Megeto-resistances^Mesa台面MESFET-MetalSemiconductor金属半导体FETMetallizatio金属化Microelectronictechniqu微电子技术Microelectronic微电子学Millenindice密勒指数Minoritycarri少数载流子Misfit失配Mismatching失配Mobileionsq动离子Mobility迁移率Module模块Modulate调制Molecular。叮$=分子晶体Monolithic1(单片ICMOSFET金属氧化物半导体场效应晶体管Mos.Transisto(MOST)MOS.晶体管MultiplicatiO倍增Modulator调制Multi-chipI多芯片ICMulti-chipmodul(MCM)多芯片模块Multiplicationcoeffid割曾因子NNakedchip未封装的芯片(裸片)Negativefeedback负反馈Negative=6$1$=2其负阻Nesting套刻Negative-temperature-coefficie负温度系数Noisemargin噪声容限Nonequilibrium非平衡Nonrolatile非挥发(易失)性Normallyoff/or常闭/开Numericalanalysi数值分析OOccupiedband满带OfficienayO率Offset偏移、失调Onstandby待命状态Ohmiccontact欧姆接触Opencircuit开路OperatingpointX作点Operatingbias工作偏置Operationalamplifie(OPAMP)运算放大器Opticalphoton=photon光子Opticalquenchin光猝灭Opticaltransiti光跃迁Optical-coupledisola光耦合隔离器Organicsemiconductor有机半导体Orientation晶向、定向Outline外形Out-of-contactmasl非接触式掩模Outputcharacterist输出特性Outputvoltage$亚血博输出电压摆幅Overcompensation过补偿Over-currentprotectic过流保护Overshoot过）中Over-voltageprotectio过压保护Overlap交迭Overload过载Oscillato振荡器Oxide氧化物Oxidation氧化Oxidepassivatio氧化层钝化PPackage封装Pad压焊点Parameter参数Parasitic0££6寄生效应Parasiticosci11atio生振荡Passination^^Passivecomponent无源元件Passivedevic既源器件Passivesurface钝化界面Parasitictransis寄生晶体管Peak-pointvoltag峰点电压Peakvoltage峰值电压Permanent-storagecircui永久存储电路Period周期Periodic{2—周期表Permeable-base可渗透基区Phase-lock100P锁相环Phasedrif注目移Phononspectra声子谱Photoconduction光电导Photodiode光电二极管Photoelectricce光■电池Photoelectriceffect电效应Photoenicdevices光子器件Photolithographicproces^^U工艺（photo）resist（光敏）抗腐蚀剂Pin管脚Pinch。£陕断PinningofFermilev费米能级的钉扎（效应）Planarprocess平面工艺Planar仃2舶1$=平面晶体管Plasma等离子体Plezoelectriceffe压电效应Poissonequation泊松方程Pointcontact点接触Polarit瓶性Polycrysta多晶Polymersemiconductor聚合物半导体Poly-silic遥晶硅Potential（电）势Potentialbarri势垒Potentialwel势阱Powerdissipation功耗Powertransisto功率晶体管Preamplifie前置放大器Primaryfla主平面Principalaxe主轴Print-circuitboa（:PCB）印制电路板Probabilit几率Probe探针Process工艺Propagationdelay（传输延时Pseudopotentialmethod鹰势发Punchthrough穿通Pulsetriggering/modulati脉冲触发/调制PulseWidenModulator（PWM）脉）中宽度调制punchthrough穿通Push-pullstag推挽级QQualityfacto^B质因子Quantization量子化Quantum量子Quantum6££江16其量子效应Quantummechanics量子力学Quasi-Fermi-16丫6唯费米能级Quartz石英RRadiationconductivi辐射电导率Radiationdamage辐射损伤Radiationfluxdensi辐射通量密度Radiationhardening辐射加固Radiationprotectic辐射保护Radiative-recombinatiOi照复合Radioactive放射性Reachthrough穿通Reactivesputteringsour反应溅射源Readdiode里德二极管Recombination复合Recoverydiode恢复二极管Reciprocallatti倒核子Recoverytime恢复时间RectifieJ整流器（管）Rectifyingcontac整流接触Reference基准点基准参考点Refractiveinde折射率Register寄存器Registration对准Regulate控制调整Relaxationlifetim也豫时间Reliabili可*性Resonance谐振Resistance电阻Resistor电阻器Resistivit电阻率Regulator稳压管（器）Relaxation驰豫Resonantfrequency共射频率Responsetime响应时间Reverse反向的Reversebias反向偏置SSamplingcircuij取样电路Sapphire蓝宝石（41203）Satellitevall卫^星谷Saturatedcurrentrang电流饱和区Saturationregion饱和区Saturation饱和的Scaleddown按比例缩小Scatterin撒射Schockleydiode肖克莱二极管Schottky肖特基Schottky匕2=「16肖特基势垒Schottkycontact肖特基接触Schrodingen薛定厄Scribinggri划片格Secondaryflat次平面Seedcrystal^J^Segregation分凝Selectivit选择性Selfaligned!对准的SelfdiffusiOii扩散Semiconductor半导体Semiconductor-controlledrectif可控硅Sendsitivit灵敏度Serial串行/串联Seriesinductance串联电感Settle=加建立时间Sheetresistanc薄层电阻$反6》屏蔽Shortcircu短路Shotnoise散粒噪声Shunt分流Sidewallcapacitanc边墙电容Signal信号Silica8珀石英玻璃Silicon硅Silicon0@比1(碳化硅Silicondioxid(SiO2)二氧化硅SiliconNitridei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