半导体封装制程及其设备介绍

半导体封装制程与设备材料知识简介

PrepareBy：WilliamGuo

2007.11Update目前一页\总数七十二页\编于十八点半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试

封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。目前二页\总数七十二页\编于十八点半导

体

制程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)DiffusionIonImplantation(扩散离子植入)Deposition(沉积)WaferInspection(晶圆检查)Grind&Dicing(晶圓研磨及切割)DieAttach(上片)WireBonding(焊线)Molding(塑封)Package(包装)WaferCutting(晶圆切断)WaferReduce

(晶圆减薄)LaserCut&packagesaw(切割成型)Testing(测试)Lasermark(激光印字)IC制造开始前段結束后段封装开始製造完成目前三页\总数七十二页\编于十八点封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage目前四页\总数七十二页\编于十八点封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage目前五页\总数七十二页\编于十八点封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray目前六页\总数七十二页\编于十八点封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack目前七页\总数七十二页\编于十八点封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier目前八页\总数七十二页\编于十八点封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpack目前九页\总数七十二页\编于十八点AssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optional)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBond

SMT(Optional)目前十页\总数七十二页\编于十八点半导体设备供应商介绍-前道部分目前十一页\总数七十二页\编于十八点半导体设备供应商介绍-前道部分目前十二页\总数七十二页\编于十八点常用术语介绍SOP-StandardOperationProcedure标准操作手册WI–WorkingInstruction作业指导书PM–PreventiveMaintenance预防性维护FMEA-FailureModeEffectAnalysis失效模式影响分析SPC-StatisticalProcessControl统计制程控制DOE-DesignOfExperiment工程试验设计IQC/OQC-Incoming/OutingQualityControl来料/出货质量检验MTBA/MTBF-MeanTimebetweenassist/Failure平均无故障工作时间CPK-品质参数UPH-UnitsPerHour每小时产出

QC7Tools(QualityControl品管七工具)OCAP(OutofControlActionPlan异常改善计划

)8D(问题解决八大步骤

)ECNEngineeringChangeNotice(制程变更通知

)ISO9001，14001–质量管理体系目前十三页\总数七十二页\编于十八点前道ＦＯＬ后道EOLWireBond引线键合Mold模塑LaserMark激光印字LaserCutting激光切割EVI产品目检SanDiskAssemblyProcessFlow

SanDisk封装工艺流程DiePrepare芯片预处理ＤieAttach芯片粘贴WaferIQC来料检验PlasmaClean清洗PlasmaClean清洗SawSingulation切割成型SMT表面贴装PMC模塑后烘烤目前十四页\总数七十二页\编于十八点SMT（表面贴装）---包括锡膏印刷(Solderpasteprinting),置件(Chipshooting),回流焊(Reflow),DI水清洗(DIwatercleaning),自动光学检查(Automaticopticalinspection),使贴片零件牢固焊接在substrate上StencilSubstrateSolderpastepringtingChipshootingReflowOvenDIwatercleaningAutomaticopticalinpectionCapacitorDIwaterCameraHotwindNozzlePADPADSolderpaste目前十五页\总数七十二页\编于十八点DiePrepare(芯片预处理)ToGrindthewafertotargetthicknessthenseparatetosinglechip---包括来片目检(WaferIncoming),贴膜(WaferTape),磨片(BackGrind),剥膜(Detape),贴片(WaferMount),切割(WaferSaw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.WafertapeBackGrindWaferDetapeWaferSaw目前十六页\总数七十二页\编于十八点InlineGrinding&Polish--AccretechPG300RMTransfer

CoarseGrind

90%FineGrind10%CentrifugalClean

Alignment&Centering

Transfer

BackSideUpward

De-taping

Mount

KeyTechnology:1.LowThicknessVariation:+/_1.5Micron2.GoodRoughness:+/-0.2Micron3.ThinWaferCapacity:Upto50Micron4.All-In-Onesolution,ZeroHandleRisk目前十七页\总数七十二页\编于十八点2.Grinding相关材料ATAPE麦拉BGrinding砂轮CWAFERCASSETTLE目前十八页\总数七十二页\编于十八点工艺对TAPE麦拉的要求：1。MOUNTNodelamination

STRONG2。SAW

ADHESIONNodieflyingoffNodiecrack目前十九页\总数七十二页\编于十八点工艺对麦拉的要求：3。EXPANDING

TAPEDiedistance ELONGATION

Uniformity

4。PICKINGUP

WEAK

ADHESIONNocontamination目前二十页\总数七十二页\编于十八点3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；目前二十一页\总数七十二页\编于十八点4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机目前二十二页\总数七十二页\编于十八点WaferTaping--NittoDR300IICutTapeTaping

AlignmentTransfer

TransferBack

KeyTechnology:1.HighTransferAccuracy:+/_2Micron2.HighCutAccuracy:+/-0.2mm3.HighThroughput:50pcswafer/Hour4.ZeroVoidandZeroWaferBroken目前二十三页\总数七十二页\编于十八点Detaping目前二十四页\总数七十二页\编于十八点l

Wafermount

Waferframe目前二十五页\总数七十二页\编于十八点晶圓切割(Dicing)Dicing设备:ADISCO6361系列BACCERTECH东京精密AW-300T目前二十六页\总数七十二页\编于十八点MainSectionsIntroductionCuttingArea:Spindles(Blade,Flange,CarbonBrush),CuttingTable,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoaderUnits:Spinner,Elevator,Cassette,

RotationArm目前二十七页\总数七十二页\编于十八点BladeClose-ViewBladeCuttingWaterNozzleCoolingWaterNozzle目前二十八页\总数七十二页\编于十八点DieSawing–Disco6361KeyTechnology:1.Twin-SpindleStructure.2.X-axisspeed:upto600mm/s.3.SpindleRotarySpeed:Upto45000RPM.4.CuttingSpeed:Upto80mm/s.5.Z-axisrepeatability:1um.6.PositioningAccuracy:3um.

RearFront目前二十九页\总数七十二页\编于十八点AFewConceptsBBD(BladeBrokenDetector)Cutter-set:ContactandOpticalPrecisionInspectionUp-CutandDown-CutCut-inandCut-remain目前三十页\总数七十二页\编于十八点晶圓切割(Dicing)Dicing相关工艺ADieChipping芯片崩角BDieCorrosive芯片腐蚀CDieFlying芯片飞片目前三十一页\总数七十二页\编于十八点Wmax,Wmin,Lmax,DDY,DY規格— DY<0.008mm Wmax<0.070mm Wmin<0.8*刀厚 Lmax<0.035目前三十二页\总数七十二页\编于十八点

切割時之轉速予切速:a.

轉速:指的是切割刀自身的轉速b.

切速:指的是Wafer移動速度.主軸轉速:S1230:30000~45000RPMS1440:30000~45000RPM27HEED:35000~45000RPM27HCCD:35000~45000RPM27HDDC:35000~45000RPM目前三十三页\总数七十二页\编于十八点晶圓切割(Dicing)3.Dicing相关材料ATapeBSawBLADE切割刀CDI去离子水、RO纯水目前三十四页\总数七十二页\编于十八点切割刀的規格規格就包括刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇P4目前三十五页\总数七十二页\编于十八点Sawblade对製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY理想的切割深度須切入膠膜(Tape)1/3厚度。P11目前三十六页\总数七十二页\编于十八点

切割刀的影響DiamondGritSize(鑽石顆粒大小)

GRITSIZE

+-TopSideChipping+-BladeLoading+-BladeLife+-FeedRate+-分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。P15目前三十七页\总数七十二页\编于十八点TAPE粘度对SAW製程的影響MountingTape(膠膜黏力)

TAPEADHESION

+-CutQuality+-FlyingDie+-分析:使用較黏膠膜可獲得1.沒有飛Die。2.較好的切割品質。潛在風險

DieAttachprocesspickupdie

影響。Cost+-DieEjection+-P10目前三十八页\总数七十二页\编于十八点晶圓切割(Dicing)4.Dicing辅助设备ACO2Bubbler二氧化碳发泡机BDIWater电阻率监测仪CDiamonflow发生器DUV照射机目前三十九页\总数七十二页\编于十八点DieAttach(芯片粘贴)ToattachsingledietoSMTedsubstrate---把芯片粘贴到已经过表面贴装(SMT)和预烘烤(Pre-bake)后的基片上,或芯片粘贴到芯片上,并经过芯片粘贴后烘烤(DieAttachCure)固化粘结剂.Passivechip(capacitor)Substrate目前四十页\总数七十二页\编于十八点上片

(DieBond)DieBond

设备AHITACHIDB700BESEC2007/2008系列CASM829/889/898系列目前四十一页\总数七十二页\编于十八点DieAttach–HitachiDB700KeyTechnology:1.Bondingspeed:30ms/die;2.BondingAccuracyX/Y:25um;3.AngleAccuracy:0.5degree;4.ThinDiePickUpSolution:Upto2mils(Electromagnetic&Multi-StepMode);5.Integrate&InlineModule:XMemory+1controller;6.Multi-DiestackDieCapacity:Upto8layersonce;目前四十二页\总数七十二页\编于十八点上片

(DieBond)2.DieBond

相关工艺目前四十三页\总数七十二页\编于十八点上片

(DieBond)3.DieBond

相关材料ASubstrate/LeadframeBDieAttachFilmCWaferafterSawDMagazine弹夹目前四十四页\总数七十二页\编于十八点Substrate

BasicStructure:CoreAuNiCuSolderMaskBondFingerViaHoleBallPad目前四十五页\总数七十二页\编于十八点SubstrateBasicInformationCore： 玻璃纤维+树脂mm镀铜层： 25um+/-5um镀镍层um镀金层umSolderMask：25um+/-5um总厚度： 0.10-0.56mm目前四十六页\总数七十二页\编于十八点發料烘烤線路形成(內層)AOI自動光學檢測壓合4layer2layer蝕薄銅綠漆線路形成塞孔鍍銅Deburr鑽孔鍍Ni/Au包裝終檢O/S電測成型AOI自動光學檢測出貨BGA基板製造流程(option)目前四十七页\总数七十二页\编于十八点上片

(DieBond)4.DieBond

辅助设备A银浆搅拌机

利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMINGREVOLUTIONSPEED

外加计时器；公转用于去泡；自转用于混合；目前四十八页\总数七十二页\编于十八点BCuringOven无氧化烤箱主要控制要素：N2流量；排气量；profile温度曲线；每箱摆放Magazine数量；目前四十九页\总数七十二页\编于十八点CWafermapping应用目前五十页\总数七十二页\编于十八点WireBond(引线键合)

DietoPackageInterconnects

Howadieisconnectedtothepackageorboard.---用金线将芯片上的引线孔和基片上的引脚连接，使芯片能与外部电路相连。在引线键合前需要经过等离子清洗(Pre-BondPlasmaClean)以保证键合质量,在引线键合后需要经过内部目检(IVI),检测出所有芯片预处理,芯片粘贴和引线键合产生的废品.目前五十一页\总数七十二页\编于十八点WireBond–K&SUltraKeyTechnology:1.Diepadopening(Min.):45um.2.Diepadspitch(Min.):60µm.3.SubstrateLeadwidth&Pitch(Min.):40µm&25

µm.4.Multi-LoopSelectioncoverallPackage.5.StackdiereverseBondingtoDecreaseTotalpackageThickness.

DiePadSubstrateLeadGoldWireCapillaryUltrasonicPowerHeaterBondForce目前五十二页\总数七十二页\编于十八点焊线(WireBond)1.WireBond

相关工艺

PadOpen&BondPadPitchBallSizeBallThicknessLoopheightWirePullBallshortCraterTest目前五十三页\总数七十二页\编于十八点焊线(WireBond)2.WireBond

相关材料SubstratewithdieCapillaryGoldWire

目前五十四页\总数七十二页\编于十八点HowToDesignYourCapillaryTIP..……PadPitchPadpitchx1.3=TIPHole..…..WireDiameterWirediameter+0.3~0.5=HCD………Padsize/open/1stBallCD+0.4~0.6=1stBondBallsizeFA&OR….Padpitch(um)FA >100 0,4 ~90/100 4,8,11<90 11,15 ICtype……looptypeCapillary目前五十五页\总数七十二页\编于十八点GoldWire

GoldWireManufacturer (Nippon,SUMTOMO,TANAKA….)GoldWireData (WireDiameter,Type,EL,TS)目前五十六页\总数七十二页\编于十八点焊线(WireBond)3.WireBond

辅助设备AMicroscope用于测loopheightBWirePull拉力计（DAGE4000）CBallShear球剪切力计DPlasma微波/等离子清洗计目前五十七页\总数七十二页\编于十八点BallSizeBallThickness

單位:um，Mil

量測倍率:50X

BallThickness計算公式

60umBPP≧1/2WD=50%60umBPP≦1/2WD=40%~50%BallSizeBallSize&BallThickness目前五十八页\总数七十二页\编于十八点LoopHeight

單位:um，Mil

量測倍率:20XLoopHeight

線長目前五十九页\总数七十二页\编于十八点WirePull1LiftedBond(Rejected)2Breakatneck(Referwire-pullspec)3Breakatwire(Referwire-pullspec)4Breakatstitch(Referstitch-pullspec)5Liftedweld(Rejected)目前六十页\总数七十二页\编于十八点BallShear

單位:gramorg/mil²BallShear計算公式

Intermetallic（IMC有75%的共晶,ShearStrength標準為＞6.0g/mil²。SHEARSTRENGTH＝BallShear/Area(g/mil²)BallShear=x;BallSize=y;Area=π(y/2)² x/π(y/2)²=zg/mil²目前六十一页\总数七十二页\编于十八点等离子工艺

PlasmaProcess气相---固相表面相互作用

GasPhase-SolidPhaseInteractionPhysicalandChemical分子级污染物去除

MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminants

FingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide)目前六十二页\总数七十二页\编于十八点PlasmaClean–MarchAP1000KeyTechnology:1.ArgonCondition,Nooxidation.2.VacuumPumpdustcollector.3.CleanLevel