DMN26D0UFB4-7;中文规格书,Datasheet资料

DMN26D0UFB4

N-CHANNELENHANCEMENTMODEMOSFET

ProductSummary

FeaturesandBenefits

•N-Channel

•Low

•3.0

•4.0

•6.0

MOSFET

On-Resistance:

Ω@4.5V

Ω@2.5V

Ω@1.8V

Ω@1.5V

ID

V(BR)DSS

RDS(on)

TA=25°C

3.0Ω@VGS=4.5V

6.0Ω@VGS=1.8V

240mA

170mA

20V

•10

•

•

•

•

•

VeryLowGateThresholdVoltage,1.05Vmax

LowInputCapacitance

FastSwitchingSpeed

LowInput/OutputLeakage

Ultra-SmallSurfaceMountPackage,0.4mmMaximumPackage

Height

DescriptionandApplications

ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-

stateresistance(R

performance,makingitidealforhighefficiencypowermanagement

applications.

)andyetmaintainsuperiorswitching

DS(on)

•ESD

ProtectedGate

•

•

•

Lead,HalogenandAntimonyFree,RoHSCompliant(Note1)

"Green"Device(Note2)

QualifiedtoAEC-Q101StandardsforHighReliability

•DC-DC

Converters

•

Powermanagementfunctions

MechanicalData

•Case:

X2-DFN1006-3

•

CaseMaterial:MoldedPlastic,“Green”MoldingCompound.UL

FlammabilityClassificationRating94V-0

•

•

•

MoistureSensitivity:Level1perJ-STD-020

TerminalConnections:SeeDiagram

Terminals:Finish–NiPdAuoverCopperleadframe.Solderable

perMIL-STD-202,Method208

•

Weight:0.001grams(approximate)

Drain

X2-DFN1006-3

BottomView

Body

Diode

Gate

S

D

Gate

Protection

Diode

G

Source

ESDPROTECTED

EquivalentCircuit

TopView

OrderingInformation(Note3)

PartNumber

Case

Packaging

DMN26D0UFB4-7

DMN26D0UFB4-7B

X2-DFN1006-3

X2-DFN1006-3

3,000/Tape&Reel

10,000/Tape&Reel

Notes:

1.Nopurposefullyaddedlead.

2.DiodesInc.’s“Green”policycanbefoundonourwebsiteat.

3.Forpackagingdetails,gotoourwebsiteat.

MarkingInformation

DMN26D0UFB4-7

DMN26D0UFB4-7B

M1

M1

M1=ProductTypeMarkingCode

TopView

DotDenotesDrainSide

TopView

BarDenotesGate

andSourceSide

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MaximumRatings@TA=25°Cunlessotherwisespecified

CharacteristicSymbol

DrainSourceVoltage

Gate-SourceVoltage

Value

20V

±10

Unit

VDSS

VGSS

V

Steady

ContinuousDrainCurrent(Note4)VGS=4.5V

State

T=25°C

TA=70°C

240

190

A

ID

mA

Steady

ContinuousDrainCurrent(Note4)VGS=1.8V

State

T=25°C

TA=70°C

180

140

A

ID

mA

PulsedDrainCurrent-TP=10µs

IDM

805mA

ThermalCharacteristics

@TA=25°Cunlessotherwisespecified

TotalPowerDissipation(Note4)@TA=25°C

ThermalResistance,JunctiontoAmbient(Note4)

OperatingandStorageTemperatureRange

PD

RθJA

TJ,TSTG

350mW

357

°C/W

°C

-55to+150

ElectricalCharacteristics@TA=25°Cunlessotherwisespecified

CharacteristicSymbol

Min

Typ

Max

Unit

TestCondition

OFFCHARACTERISTICS(Note5)

Drain-SourceBreakdownVoltage

BVDSS

IDSS

20

⎯

⎯

⎯

⎯

500nA

±1

±100

V

VGS=0V,ID=100μA

VDS=20V,VGS=0V

ZeroGateVoltageDrainCurrent@TC=25°C

μA

nA

V=±10V,VDS=0V

Gate-BodyLeakage

IGSS

⎯

⎯

GS

V=±5V,V=0V

GS

DS

ONCHARACTERISTICS(Note5)

GateThresholdVoltage

VGS(th)

RDS(ON)

0.45

⎯

1.05V

VDS=VGS,ID=250μA

⎯

⎯

⎯

⎯

V=4.5V,ID=100mA

1.8

2.5

3.4

4.7

3.0

4.0

6.0

GS

V=2.5V,I=50mA

StaticDrain-SourceOn-Resistance

Ω

GS

D

V=1.8V,ID=20mA

GS

10.0

V=1.5V,ID=10mA

GS

ForwardTransconductance

Source-DrainDiodeForwardVoltage

DYNAMICCHARACTERISTICS

InputCapacitance

|Yfs|

VSD

180242

0.5

⎯

1.4V

mS

VDS=10V,ID=0.1A

VGS=0V,IS=115mA

⎯

Ciss

Coss

Crss

⎯

⎯

⎯

14.1

2.9

1.6

⎯

⎯

⎯

pF

pF

pF

V=15V,VGS=0V

OutputCapacitance

DS

f=1.0MHz

ReverseTransferCapacitance

SWITCHINGCHARACTERISTICS

Turn-OnDelayTime

RiseTime

Turn-OffDelayTime

td(on)

tr

td(off)

tf

⎯

⎯

⎯

⎯

3.8

7.9

13.4

15.2

⎯

⎯

⎯

⎯

V=4.5V,VDD=10V

ns

GS

I=200mA,R=2.0Ω

D

G

FallTime

Notes:

4.DevicemountedonFR-4PCboard,withminimumrecommendedpadlayout,singlesided.

5.Shortdurationpulsetestusedtominimizeself-heatingeffect.

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0.8

0.7

0.4

0.3

VDS=10V

VGS=8V

VGS=4.5V

0.6

)

TA=-55°C

)

A

A

(

(

T

N

E

R

R

U

C

TA=25°C

T

VGS=3.0V

VGS=2.5V

N0.5

TA=85°C

TA=125°C

TA=150°C

E

R

R

U0.4

0.2

C

N

N

I

I

A

A0.3

R

R

D

D

VGS=2.0V

,

,

D0.2

D0.1

I

I

0.1

0

VGS=1.5V

0

0

0.5

1

1.5

2

2.5

3

0

0.5

1

1.5

2

2.5

3

V,GATE-SOURCEVOLTAGE(V)

Fig.2TypicalTransferCharacteristic

VDS,DRAIN-SOURCEVOLTAGE(V)

Fig.1TypicalOutputCharacteristic

GS

5

4

4

3

)

)

Ω

Ω

(

(

E

C

N

A

T

S

E

C

N

A

T

S

VGS=4.5V

I

I

S

S

E

R

E

R

-

-

N

N

TA=150°C

O

O

E

E

C

R

U

O

S

3

C2

R

TA=125°C

TA=85°C

U

VGS=1.8V

O

S

-

-

TA=25°C

TA=-55°C

N

N

I

I

A

A

2

1

1

R

R

D

VGS=2.5V

VGS=4.5V

D

,

,

)

N

)

N

O

O

(

S

(

S

D

R

D

R

0

0.01

0.01

0.1

1

0.1

I,DRAINCURRENT(A)

1

ID,DRAIN-SOURCECURRENT(A)

Fig.3TypicalOn-Resistance

vs.DrainCurrentandGateVoltage

D

Fig.4TypicalOn-Resistance

vs.DrainCurrentandTemperature

2.0

4.0

3.5

1.8

1.6

)

D

E

Z

VGS=4.5V

ID=500mA

EI

3.0

E

C

R

U

O

S

L

C

R

U

O

S

-

)

A

M

Ω

(

1.4

1.2

1.0

0.8

R

O

N

E

C

N

A

T

2.5

2.0

VGS=2.5V

-

N(

N

I

D=150mA

IE

A

I

VGS

=2.5V

AS

C

R

RI

ID=150mA

N

S

D

D

A

E

,T

,

R

NS

N

O

-

O

N

I

S

S

SO1.5

DE

D

R

R

R

-

N

V

ID=500mA

=4.5V

GS

O

1.0

0.5

-50-25125150

TA,AMBIENTTEMPERATURE(°C)

Fig.6On-ResistanceVariationwithTemperature

0.6

0.4

-50-25

T,AMBIENTTEMPERATURE(°C)

Fig.5On-ResistanceVariationwithTemperature

0

25

50

75

100

125150

0

25

50

75

100

A

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1.4

1.2

0.8

0.7

)

V

(

E

G

A

T

L

)

0.6

0.5

A

1.0

0.8

0.6

0.4

(

O

T

N

E

R

R

U

V

D

TA=25°C

L

ID=1mA

O

H

S

E

R

H

T

C

0.4

0.3

E

C

R

U

O

S

ID=250µA

E

T

A

G

,

0.2

S

I

,

)

H

0.2

0

T

0.1

0

(

S

G

V

-50-25

0

25

50

75

100125150

0

0.2

0.4

0.6

0.8

1

1.2

1.41.6

T,AMBIENTTEMPERATURE(°C)

V,SOURCE-DRAINVOLTAGE(V)

Fig.8DiodeForwardVoltagevs.Current

A

SD

Fig.7GateThresholdVariationvs.AmbientTemperature

20

10,000

f=1MHz

)1,000

A

n

(

15

TA=150°C

TA=125°C

T

N

E

)

F

p

(

Ciss

R

R

U

C

E

C

100

N

A

T

10

E

G

A

K

A

E

L

I

C

A

P

A

C

10

1

TA=85°C

,

C

,

5

S

S

D

TA=25°C

I

Coss

TA=-55°C

Crss

0

0.1

0

0

4

8

12

16

20

2

4

6

8

10

1214161820

VDS,DRAIN-SOURCEVOLTAGE(V)

Fig.9TypicalTotalCapacitance

VDS,DRAIN-SOURCEVOLTAGE(V)

Fig.10TypicalLeakageCurrentvs.Drain-SourceVoltage

1

E

C

N

A

T

D=0.7

D=0.5

S

D=0.3

I

S

E

R

0.1

L

D=0.1

A

M

R

E

H

T

D=0.9

D=0.05

D=0.02

T

N

E

RθJA(t)=r(t)*R

θJA

R=278°C/W

θJA

0.01

I

S

D=0.01

N

A

R

T

P(pk)

t1

D=0.005

t

,

2

)

t

T-T=P*RθJA(t)

(

r

J

A

DutyCycle,D=t/t

D=SinglePulse

12

0.001

0.0000010.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t,PULSEDURATIONTIME(s)

1

Fig.11TransientThermalResponse

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PackageOutlineDimensions

A

X2-DFN1006-3

Dim

A

Min

⎯

MaxTyp

A1

0.40

⎯

A1

b1

b2

D

0

0.10

0.45

0.050.02

0.200.15

0.550.50

D

0.951.051.00

E

0.55

0.650.60

b1

e

⎯

⎯

0.35

0.200.300.25

0.300.25

0.40

E

b2

e

L1

L2

L3

0.20

⎯

⎯

AllDimensionsinmm

L2

L3

L1

SuggestedPadLayout

C

DimensionsValue(inmm)

X

Z

G1

G2

X

1.1

0.3

0.2

0.7

0.25

0.4

0.7

1

X

G2

X1

Y

G1

C

Y

Z

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