笔记本电源芯片apm2034na

APM2034N

CopyrightANPECElectronicsCorp.Rev.A.1-Oct.,2003

PAGE

1

N-ChannelEnhancementModeMOSFET

Features PinDescription

DS(ON) GS

20V/20A,R =20m(typ.)@V=4.5V

RDS(ON)=30m(typ.)@VGS=2.5V

SuperHighDenseCellDesignforExtremelyLowRDS(ON)

ReliableandRugged

TO-252Package

1 2 3

G D S

TopViewofTO-252

D

Applications

PowerManagementinDesktopComputerorDC/DCConverters.

G

OrderingandMarkingInformation

S

N-ChannelMOSFET

APM2034N

HandlingCodeTemp.RangePackageCode

PackageCodeU:TO-252

OperationJunctionTemp.RangeC:-55to150C

HandlingCode

TR:Tape&Reel

APM2034NU:

APM2034NXXXXX

XXXXX-

A

Absolute umRatings (T=25Cunlessotherwisenoted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-SourceVoltage

20

V

VGSS

Gate-SourceVoltage

±12

I*D

umDrainCurrent–Continuous

20

A

IDM

umDrainCurrent–Pulsed

55

*Currentlimitedbybondwire.

ANPECreservestherighttomakechangestoimprovereliabilityormanufacturabilitywithoutnotice,andadvisecustomerstoobtainthelatestversionofrelevantinformationtoverifybeforecingorders.

A

Absolute umRatings(Cont.)(T=25Cunlessotherwisenoted)

Symbol

Parameter

Rating

Unit

PD

umPowerDissipation

TC=25C

50

W

TC=100C

20

TJ

umJunctionTemperature

150

C

TSTG

StorageTemperatureRange

-55to150

C

RJC

Thermal –JunctiontoCase

2.5

C/W

A

ElectricalCharacteristics (T=25Cunlessotherwisenoted)

Symbol

Parameter

TestCondition

APM2034N

Unit

Min.

Typ.

Max.

Static

BVDSS

Drain-SourceBreakdownVoltage

VGS=0V,IDS=250A

20

V

IDSS

ZeroGateVoltageDrainCurrent

VDS=16V,VGS=0V

1

A

VGS(th)

GateThresholdVoltage

VDS=VGS,IDS=250A

0.6

0.75

1.5

V

IGSS

Ga eakageCurrent

VGS=12V,VDS=0V

100

nA

a

RDS(ON)

Drain-SourceOn-state

VGS=4.5V,IDS=13A

20

34

m

VGS=2.5V,IDS=6A

30

50

VSDa

DiodeForwardVoltage

ISD=1.7A,VGS=0V

0.7

1.3

V

Dynamicb

Qg

TotalGateCharge

VDS=10V,IDS=13AVGS=4.5V,

10

15

nC

Qgs

Gate-SourceCharge

1.9

Qgd

Gate-DrainCharge

2

td(ON)

Turn-onDelayTime

VDD=10V,IDS=1A,VGEN=4.5V,RG=6

25

47

ns

Tr

Turn-onRiseTime

21

42

td(OFF)

Turn-offDelayTime

65

120

Tf

Turn-offFallTime

35

65

Ciss

InputCapacitance

VGS=0VVDS=15V

Frequency=1.0MHz

780

pF

Coss

OutputCapacitance

165

Crss

ReverseTransferCapacitance

105

Notes

a:Pulsetest;pulsewidth300s,dutycycle2

b:Guaranteedbydesign,notsubjecttoproductiontesting

TypicalCharacteristics

OutputCharacteristics

V=3,4,5,6,7,8,9,10V

GS

V=2.5V

GS

V=2V

GS

V=1.5V

GS

50

TransferCharacteristics

T=125oC

j

T=25oC

j

T=-55oC

j

50

ID-DrainCurrent(A)

40 40

ID-DrainCurrent(A)

30 30

20 20

10 10

0

0 2 4 6 8

VDS-Drain-to-SourceVoltage(V)

0

0 1 2 3 4

VGS-Gate-to-SourceVoltage(V)

ThresholdVoltagevs.JunctionTemperature

IDS=250A

1.6

VGS(th)-ThresholdVoltage(V)(Normalized)

1.4

1.2

1.0

0.06

)

0.05

0.04

On- vs.DrainCurrent

V=2.5V

GS

V=4.5V

GS

RDS(ON)-(On-

0.8 0.03

0.6

0.4

0.2

0.0

-50-25 0 25 50 75100125150

Tj-JunctionTemperature(°C)

0.02

0.01

0.00

0 10 20 30 40 50

ID-DrainCurrent(A)

TypicalCharacteristics

On-vs.Gate-to-SourceVoltage

I=13A

D

0.07

On-vs.JunctionTemperature

V=4.5V

GS

I=13A

DS

2.0

)

0.06

0.05

0.04

1.6

)

RDS(ON)-(On-

(Normalized)

1.2

RDS(ON)-(On-

0.03

0.8

0.02

0.01

0.00

0 2 4 6 8 10

VGS-Gate-to-SourceVoltage(V)

0.4

0.0

-50-25 0 25 50 75100125150

TJ-JunctionTemperature(°C)

GateCharge

V=10V

DS

I=13A

D

5

VGS-Gate-SourceVoltage(V)

4

1200

Capacitance(pF)

900

Capacitance

Frequency=1MHz

Ciss

Coss

Crss

3

2

1

0

0 2 4 6 8 10 12

QG-GateCharge(nC)

0 4 8 12

VDS-Drain-to-SourceVoltage(V)

TypicalCharacteristics

Source-DrainDiodeForwardVoltage

T=150oC

j

T=25oC

j

50

175

SinglePulsePower

Tc=25oC

IS-SourceCurrent(A)

140

10

Power(W)

105

1 70

35

0.1

0.0 0.3 0.6 0.9 1.2 1.5

0

1E-4

1E-3

0.01

0.1 1

10 100

VSD-Source-to-DrainVoltage(V) Time(sec)

NormalizedThermalTransientImpedence,JunctiontoAmbient

DutyCycle=0.5

D=0.2D=0.1

D=0.05D=0.02

D=0.01

SINGLEPULSE

PDM

t1

t2

1.DutyCycle,D=t1/t2

2.PerUnitBase=R=50oC/W

thJC

3.T-T=PZ

JMADMthJA

4.SurfaceMountedon1in2FR4board

2

NormalizedEffectiveTransientThermalImpedance

1

0.1

0.01

1E-3

1E-4 1E-3 0.01 0.1 1 10 100

SquareWavePulseDuration(sec)

APM2034N

CopyrightANPECElectronicsCorp.Rev.A.1-Oct.,2003

PAGE

6

PackagingInformation

E

b2

L2

D

L1

b

e1

A

C1

H

L

C

A1

TO-252(ReferenceJEDECRegistrationTO-252)

Dim

Millimeters

Inches

Min.

Max.

Min.

Max.

A

2.18

2.39

0.086

0.094

A1

0.89

1.27

0.035

0.050

b

0.508

0.89

0.020

0.035

b2

5.207

5.461

0.205

0.215

C

0.46

0.58

0.018

0.023

C1

0.46

0.58

0.018

0.023

D

5.334

6.22

0.210

0.245

E

6.35

6.73

0.250

0.265

e1

3.96

5.18

0.156

0.204

H

9.398

10.41

0.370

0.410

L

0.51

0.020

L1

0.64

1.02

0.025

0.040

L2

0.89

2.032

0.035

0.080

APM2034N

CopyrightANPECElectronicsCorp.Rev.A.1-Oct.,2003

PAGE

7

PhysicalSpecifications

TerminalMaterial

Solder-tedCopper(SolderMaterial:90/10or63/37SnPb)

LeadSolderability

MeetsEIASpecificationRSI86-91,ANSI/J-STD-002Category3.

temperature

ReflowCondition(IR/ConvectionorVPRReflow)

Peaktemperature

183C

Pre-heattemperature

ClassificationReflowProfiles

Time

ConvectionorIR/

Convection

VPR

Averageramp-uprate(183CtoPeak)

3C/secondmax.

10C/secondmax.

Preheattemperature125±25C)

120secondsmax

Temperaturemaintainedabove183C

60–150seconds

Timewithin5Cofactualpeaktemperature

10–20seconds

60seconds

Peaktemperaturerange

220+5/-0Cor235+5/-0C

215-219Cor235+5/-0C

Ramp-downrate

6C/secondmax.

10C/secondmax.

Time25Ctopeaktemperature

6minutesmax.

PackageReflowConditions

pkg.thickness2.5mmandallbgas

pkg.thickness<2.5mmand

pkg.volume350mm³

pkg.thickness<2.5mmandpkg.volume<350mm³

Convection220+5/-0C

Convection235+5/-0C

VPR215-219C

VPR235+5/-0C

IR/Convection220+5/-0C

IR/Convection235+5/-0C

Reliabilitytestprogram

Testitem

Method

Description

SOLDERABILITY

MIL-STD-883D-2003

245°C,5SEC

HOLT

MIL-STD883D-1005.7

1000HrsBias@125°C

PCT

JESD-22-B,A102

168Hrs,100%RH,121°C