掺氮氧化钇氧化铪高介电栅介质薄膜氮含量的调控及性能优化研究的开题报告

掺氮氧化钇氧化铪高介电栅介质薄膜氮含量的调控及性能优化研究的开题报告AbstractInordertomeettheneedsoftheminiaturization,integrationandhigh-frequencyofelectronicdevices,high-kdielectricmaterialswithhighpermittivityandlowlosshavereceivedextensiveattention.Yttriumoxidesandhafniumoxidesarecurrentlythemostwidelyusedhigh-kdielectricmaterialsinsemiconductorindustry,andtheirmixedoxideshavealsoshownexcellentperformance.Theintroductionofnitrogenintothemixedoxidethinfilmscaneffectivelyimprovetheirelectricalpropertiessuchaspermittivity,leakagecurrent,andreliability.Therefore,inthisresearch,thenitrogencontentintheDy2O3-HfO2mixedoxidethinfilmswillbeadjustedbytheatomiclayerdeposition(ALD)process,andtheeffectofnitrogencontentonthephysicalandelectricalpropertiesofmixedoxidethinfilmswillbeinvestigated.IntroductionAstheminiaturizationofelectronicdevicesprogresses,thethicknessofthegateoxidelayerintheMOSFET(Metal-Oxide-SemiconductorFieldEffectTransistor)devicecontinuestodecrease.Withthedecreaseoftheoxidelayerthickness,thegateleakagecurrentincreasessignificantly,whichbringsgreatchallengestothereliabilityofdeviceoperation.Therefore,researchershavebeenexploringnewhighpermittivity(high-k)gatedielectricmaterialswithlowleakagecurrenttoreplacetraditionalSiO2.Yttriumoxides(Y2O3)andhafniumoxides(HfO2)arecurrentlyconsideredasthemostpromisinghigh-kdielectricmaterials.ThemixedoxidefilmsofDy2O3andHfO2havealsoshownexcellentperformanceintermsofdielectricconstant,leakagecurrent,andreliability.Furthermore,theintroductionofnitrogencaneffectivelyimprovetheelectricalpropertiesofmixedoxidethinfilms.Therefore,adjustingthenitrogencontentinDy2O3-HfO2mixedoxidethinfilmsisapromisingapproachtoimprovetheirperformance.ResearchcontentandobjectivesInthisresearch,Dy2O3-HfO2mixedoxidethinfilmswillbepreparedbyALD,andthenitrogencontentwillbeadjustedthroughthedepositionofnitrogen-containingprecursorsduringtheALDprocess.Thephysicalandelectricalpropertiesoftheresultantmixedoxidethinfilms,includingcrystalstructure,surfacemorphology,dielectricconstant,interfacequality,andleakagecurrent,willbeinvestigatedsystematically.Thespecifictasksandobjectivesoftheresearchareasfollows:(1)ToprepareDy2O3-HfO2mixedoxidethinfilmswithdifferentnitrogencontentsbyALD.(2)Toinvestigatethecrystalstructure,surfacemorphology,andchemicalcompositionofthemixedoxidethinfilmsbyX-raydiffraction,atomicforcemicroscopy,andX-rayphotoelectronspectroscopy.(3)Tostudythedielectricpropertiesofthemixedoxidethinfilms,includingdielectricconstant,losstangent,andbreakdownvoltage,bycapacitance-voltagemeasurement.(4)ToevaluatetheinterfacequalityofthemixedoxidethinfilmswithSisubstratebyconductancemethod.(5)Toanalyzetheleakagecurrentdensityofthemixedoxidethinfilmsbycurrent-voltagemeasurement.ExpectedresultsThroughtheadjustmentofnitrogencontent,thephysicalandelectricalpropertiesofDy2O3-HfO2mixedoxidethinfilmscanbeoptimized,andtheirperformancecanbeimproved.Theexpectedresultsinclude:(1)ToobtainDy2O3-HfO2mixedoxidethinfilmswithdifferentnitrogencontentsbyALD.(2)Toinvestigatetherelationshipbetweenthenitrogencontentandthecrystalstructure,surfacemorphology,andchemicalcompositionofDy2O3-HfO2mixedoxidethinfilms.(3)ToobtaintheoptimumnitrogencontentthatcansignificantlyimprovethedielectricpropertiesofDy2O3-HfO2mixedoxidethinfilms,includingdielectricconstant,losstangent,andbreakdownvoltage.(4)TooptimizetheinterfacequalityofDy2O3-HfO2mixedoxidethinfilmswithSisubstrate.(5)TosuppresstheleakagecurrentdensityofDy2O3-HfO2mixedoxidethinfilmsbyadjustingthenitrogencontent.SignificanceoftheresearchThisresearchwillprovideapromisingapproachforthefabricationofhigh-performancegatedielectricmaterialsfornext-generationelectronicdevices.ThecontrolofnitrogencontentinDy2O3-HfO2mixedoxidethinfilmsthroughALDprovidesafeasiblemethodforoptimizingtheirperformance.The