电子器件 技术文件COMSOL-SemiconductorModule-v44-16-9

SemiconductorModule

SemiconductorDeviceSimulationintheCOMSOLMultiphysics

EnvironmentSemiconductorDevicesBipolarTransistorsMOSFETsJBSDiodesProductSuiteCOMSOLVersion4.4SemiconductorDeviceModelingCapabilities

TransportEquationsCarrierstatisticsMaxwell-BoltzmannFermi-DiracDifferentdiscretizationsFiniteVolumeMethod(FVM)FiniteElementMethod(FEM)PossibilitytosolveforElectronsandholesMajoritycarrieronlyStudytypesStationaryTimeDependentSmallSignalAnalysis,FrequencyDomainPoissonandcontinuityequations

CarrierStatistics

TheFermidistributionsforan-type(AandB)andforap-type(CandD)semiconductor.Thenon-degeneratecasesaredisplayedontheleft(AandC)andthedegeneratecasesontheright(BandD).ChoiceofDiscretizationFinitevolume(default)UseacentereddifferenceschemeforthePoisson’sequation.UseaScharfetter-Gummelschemeforthedrift-diffusionequation.FiniteelementUseastreamlinediffusionforstabilization.ChoicebetweenLinearformulationLogarithmicformulationExampleofafinitevolumediscretizationin1D.

MeshboundaryComputationalnode(0thorder)

AbasicScharfetter-Gummelscheme

MobilityModelsUserdefinedPower-lawEffectofphononsAroraEffectofphononsEffectofionizedimpuritiesFletcherEffectofcarrier-carrierscatteringLombardiSurfaceSurfacescatteringCaughey-ThomasHighfieldvelocityscatteringElectronmobilityinasymmetricdual-gateMOSFETcomputedusingtheCaughey-Thomasmobilitymodel.GenerationandRecombinationModelsUserDefinedRecombinationorgenerationImpactionizationDirectband-gapIndirect-band-gapShockley-Reed-HallAugerSummaryoftheimplementedrecombinationprocessesfordirect(e.g.GaAs)andindirect(e.g.Si)band-gaps.Metal-SemiconductorContactsIdealSchottkycontactThermionicemissionIdealandnon-idealbarrierheightCircuitconnectioncapabilityIdealohmiccontactCircuitconnectioncapabilityNormofthecurrentdensityinaSiCJBSdiodeunderforwardbias(halfonthedeviceisrepresented).Metal-Oxide-SemiconductorInterfacesThin-insulatorgateSimulatethemetal-oxidestructureasaboundarycondition.CircuitconnectioncapabilityChargeconservationfeatureModelingdielectricsincontactwiththesemiconductingmaterial.ChoiceofmultipleboundaryconditionsPotentialdistributioninasiliconMOSFETabovesaturation.AdditionalfeaturesoverviewDopantdistributionUserDefinedGaussianIncompleteionizationMateriallibrarySi,Ge,GaAs,Al(x)Ga(1-x)AsGaN(Wurtzite),GaN(ZincBlende)GaP,GaSb,InAs,InP,InSbAcomplexdopantdistributionusingseveralGaussiandopinganduniformdopingsteps.Completefeatureslistavailableonhttp:///products/specifications/semiconductor/

3DCADFileFormatsACIS®Catia®V5Creo™ParametricIGESInventor®Parasolid®(read&write)Pro/ENGINEER®SolidWorks®SolidEdge®STEPLiveLink™InterfaceProductsLiveLink™forAutoCAD®LiveLink™forCreo™ParametricLiveLink™forInventor®LiveLink™forPro/ENGINEER®LiveLink™forSolidEdge®LiveLink™forSolidWorks®LiveLink™forSpaceClaim®PartnerMeshingProductsMimicsSimpleware2DCADFileFormatsDXFE-CADFileFormatsGDS/NETEX-GODB++MeshFileFormatsNASTRANSTL(read&write)VRMLCAD&MeshingInteroperabilityMATLABBasedScriptingAllthefunctionalityintheCOMSOLGUIisequivalentlyavailableviatheLiveLink™forMATLAB®whichalsoallowsforscriptingandautomationofmodelgeneration,resultsextraction,anddesignoptimization.Multicore,ClusterandCloudComputingEfficientparallelcomputingforbothshared-memory/multicoreanddistributedsystems.Fordistributedcomputing,averyefficientsparsematrixreorderingalgorithmfordirectsolversisusedviatheoptimizedmatrix-vectordatacommunication.CloudcomputingthroughAmazonElasticComputeCloud™(AmazonEC2™).SemiconductorDeviceModelingExamples

SeealsotheCOMSOLModelLibrary(installedwiththeproduct).Additionalexamplesareavailableat:/showroom/product/Acomparisonismadebetweenreferenceddata,thefinitevolume(FV)andfiniteelement(FE)discretization.Thisfigureshowstheenergydiagramofapn-junctionunderreversebiasforbothFEwithstreamlinediffusionandFVdiscretization.PN-Junction1DThemodelcomparesresultsobtainedwiththecontinuousquasi-Fermilevelsandthethermionicemissionmodel.Thisfigureshowsthebenchmarkresultforan-GaAs/p-Al0.25Ga0.75Asjunctionunderforwardandreversebiasusingthethermionicemissionmodel.Heterojunction1DBipolarTransistorThismodelsimulatesabipolartransistor(BJT)incommon-emitterconfiguration.ThefigureshowsthenormoftheelectricalfieldatthejunctionsoftheBJTinnormalmode.Thewhitearrowsrepresentthedirectionofthecurrentinthedevice(halfofthedeviceisrepresented).Thecurrentflowsfromthebase(topright)andcollector(bottom)totheemitter(topleft)PN-DiodeCircuitThemodelconnectsacircuitsimulatortoafulldevice(pn-diode)simulationtosimulatetheelectricalbehaviorofanhalf-waverectifier.Thefigureshowstheoutputofthemodelcomparedtothecircuitresponseobtainedusingthediodelargesignalanalysis.MOSFETThismodelshowstheformationofaninvertedchannelundertheinsulatinglayer(gate)whenapositivedrain-andgain-voltagesareappliedwithrespecttothesource.Thelatterchannelallowsthecurrenttopassbetweenthedrainandthesource.ThefigureshowsthespacechargedensityinasiliconMOSFETfordrainvoltageabovesaturation.The

neutralregionsaredisplayedingreen.BreakdowninaMOSFETThismodelshowstheeffectofimpactionizationonthedraincurrentofaMOSFETund