雨课堂学堂在线学堂云Analog Electronic Technology(西安邮电大学)单元测试考核答案

第1题Ap-njunctionisforwardbiasedwhen____.Atheappliedpotentialcausesthen-typematerialtobemorepositivethanthep-typematerialBtheappliedpotentialcausesthen-typematerialtobemorenegativethanthep-typematerialCbothmaterialsareatthesamepotentialDNoneofthese第2题Ap-njunctionisreversebiasedwhen_______.Atheappliedpotentialcausesthen-typematerialtobemorepositivethanthep-typematerialBtheappliedpotentialcausesthen-typematerialtobemorenegativethanthep-typematerialCthecurrentflowacrossthejunctionisbasedonminoritycarriertransferDAlloftheabove第3题Thediffusioncapacitanceofadiodeisashuntcapacitanceeffectthatoccurswhenthediode_____.AislargeBissmallCisforwardbiasedDisreversebiased第4题Thetransitioncapacitanceofadiodeisashuntcapacitiveeffectthatoccurswhenthediode_____.AislargeBissmallCisforward-biasedDisreverse-biased第5题Thereversesaturationcurrentofadiodewilljustabout___forevery10°Criseinthediodetemperature.AdoubleBhalfCincreaseproportionatelywithtemperatureDdecreaseproportionatelywithtemperature第6题Increasingthetemperatureofaforward-biaseddiode______.AcausesforwardcurrenttoincreaseBcausesforwardcurrenttodecreaseChasnosignificanteffectontheforwardcurrentDNoneofthese第7题Someofthemodernohmmetershaveadiodetestsetting.Ifyoudonothaveoneoftheseohmmetersthentotestthediodeyouneedtocheckitsresistanceintheforwardandthereversedirection.Theseresistancesshouldbe_____.ArelativelyhighintheforwarddirectionandrelativelylowinthereversedirectionBrelativelylowintheforwarddirectionandrelativelylowinthereversedirectionCrelativelylowintheforwarddirectionandrelativelyhighinthereversedirectionDrelativelyhighintheforwarddirectionandrelativelyhighinthereversedirection第8题IntheZenerregionthecurrent________andthevoltageacrossthediode_____.Aisalmostconstant;canincreasealotBisalmostconstant;isalmostconstantCcanincreasealot;isalmostconstantDcanincreasealot;canincreasealot第9题The____diodeisashortcircuitfortheregionofconductionanditisanopencircuitintheregionofnonconduction.AidealBtypicalCpowerDsmall-signal第10题Theidealdiodesymbolhasanarrowthatpointsinthedirectionof______.AtheleakagecurrentflowBtheforwardcurrentflowCpositiveterminalunderforwardbiasDAlloftheabove第11题Asthedevicetemperatureincreases,semiconductormaterialstendtohave______.AanincreasingnumberoffreeelectronsBadecreasingnumberoffreeelectronsClowerconductionlevelsDrelativelyunchangedconductionconductionlevels第12题Dopingisusedto____.AdecreasetheconductivityofanintrinsicsemiconductorBincreasetheconductivityofanintrinsicsemiconductorCstabilizetheconductivityofanintrinsicsemiconductorDincreasetheinsulativequalityofanintrinsicsemiconductor第13题Whenap-njunction'sdepletionlayerisnarrowedandthedeviceactsasanearlyperfectconductor,itis______.Aforward-biasedBreverse-biasedCunbiasedDNoneoftheabove第14题Whenap-njunctionisreverse-biased,thedepletionlayeris________andthedeviceactsasanear-perfect______.Anarrowed;conductorBnarrowed;insulatorCwidened;conductorDwidened;insulator第15题Theelectrodewithn-typematerialofadiodeiscalledthe_____.AanodeBcathodeCdepletionregionDZenerregion第16题Silicondiodeshavebeenmoresignificantlydevelopedthangermaniumbecause___.AitischeaperBitiseasiertoproduceCitismoretolerantofheatDithasalowerforwardvoltagedrop第17题Pentavalentatomsareoftenreferredtoas_____.AdonoratomsBminoritycarriersCacceptoratomsDmajoritycarriers第18题Theelectrodewithp-typematerialofadiodeiscalledthe____.AanodeBcathodeCdepletionregionDZenerregion第19题Whentestedwithanohmmeter,adiodeshouldhavearelativelyhighresistancefor_____condition.Athereverse-biasedBtheforward-biasedCbothreverseandforward-biasedDzero-biased第20题Whentestedwithanohmmeter,adiodeshouldhavearelativelysmallresistancefor____condition.Athereverse-biasedBtheforward-biasedCbothreverse-andforward-biasedDzero-biased第21题Theactofgivingofflightbyapplyinganelectricalsourceofenergyiscalled_____.AlightpowerBlaserCphotonsDelectroluminescence第1题Ifonesilicondiodeandonegermaniumdiodeareconnectedinseries,thevoltagedropacrossthecombinationofthetwodiodeswillbeequalto______.AtheforwarddropequaltothatofthesilicondiodeBtheforwarddropequaltothatofthegermaniumdiodeCtheforwarddropequaltothatofthesumofthevoltagedropsacrossthetwodiodesDtheforwarddropequaltothatofthedifferenceofthevoltagedropsacrossthetwodiodes第2题Namethelogicgatethatisformedbythiscircuit.______.ApositivelogicORgateBpositivelogicANDgateCnegativelogicORgateDnegativelogicANDgate第3题Thecurrentflowsthroughtheloadresistorinthiscircuitduringthe____.ApositivehalfcycleoftheinputwaveformBnegativehalfcycleoftheinputwaveformCentireinputwaveformDThediodewillblockallcurrentandtherewillbenocurrentflowingthroughtheload.第4题Calculatethepeakcurrentthatwillflowthroughthiscircuit,assuminganidealdiode.______A12mAduringthepositivehalfcycleB12mAduringthenegativehalfcycleC16.97mAduringthepositivehalfcycleD16.97mAduringthenegativehalfcycle第5题Ahalf-waverectifierisconnectedtoaACsourceof20Vm.Thedcoutputvoltageis____.A19.3VdcB13.65VdcC6.14VdcDNoneofthese第6题Thepointofintersectionbetweenthecharacteristiccurveofthediodeandtheresistorsloadlineisknownasthe_____.ApointofoperationBQ-pointCquiescentpointDAlloftheabove第7题Namethelogicgatethatisformedbythiscircuit.______.ApositivelogicORgateBpositivelogicANDgateCnegativelogicORgateDnegativelogicANDgate第8题Thecurrentflowsthroughtheloadresistorinthiscircuitduringthe____.ApositivehalfcycleoftheinputwaveformBnegativehalfcycleoftheinputwaveformCentireinputwaveformDThediodewillblockallcurrentandtherewillbenocurrentflowingthroughtheload.第9题Calculatethepeakcurrentthatwillflowthroughthiscircuit,assuminganidealdiode.______A12mAduringthepositivehalfcycleB12mAduringthenegativehalfcycleC16.97mAduringthepositivehalfcycleD16.97mAduringthenegativehalfcycle第10题Forthisclippingcircuit,whatwillbethemaximumoutputvoltagewhenthediodeisconducting?______.A+16.97VoltsB-16.97VoltsC+2.5VoltsD+19.47Volts第11题Whichofthefollowingcircuitsisusedtochangethedcreferenceofasignalwithoutchangingtheshapeofthesignal?_____AaclipperBaclamperCavoltagemultiplierDavoltagedividerChapter3assignment第1题Thisisthesymbolfora______.Anpn-typeBJTBpnp-typeBJTCpnn-typeBJTDppn-typeBJT第2题IdentifytheterminalsonthisBJT._____A1=base,2=emitter,3=collectorB1=emitter,2=collector,3=baseC1=collector,2=base,3=emitterD1=collector,2=emitter,3=base第3题Forbasicoperationofatransistorthebase-emitterjunctionis____biased.Aforward-Breverse-CnotDsemi-第4题Forbasicoperationofatransistorthecollector-basejunctionis_______biased.Aforward-Breverse-CnotDsemi-第5题WhichofthefollowingistrueforthisBJTcircuit?_______AThebase-emitterandcollector-basejunctionsarebothforward-biased.BThebase-emitterjunctionisforward-biasedandthecollector-basejunctionisreversed-biased.CThebase-emitterjunctionisreverse-biasedandthecollector-basejunctionisforward-biased.DThebase-emitterandcollector-basejunctionsarebothreverse-biased.第6题WhichofthefollowingistrueforthisBJTcircuit?_______AThebase-emitterandcollector-basejunctionsarebothforward-biased.BThebase-emitterjunctionisforward-biasedandthecollector-basejunctionisreversed-biased.CThebase-emitterjunctionisreverse-biasedandthecollector-basejunctionisforward-biased.DThebase-emitterandcollector-basejunctionsarebothreverse-biased.第7题Inthesaturationregion,thebase-emitterjunction_____.Aandthebase-collectorjunctionsarebothforward-biasedBandthebase-collectorjunctionsarebothreverse-biasedCisforward-biasedwhilethebase-collectorjunctionisreversed-biasedDisreversed-biasedwhilethebase-collectorjunctionisforward-biased第8题Inthecut-offregion,thebase-emitterjunction_____.Aandthebase-collectorjunctionsarebothforward-biasedBandthebase-collectorjunctionsarebothreverse-biasedCisforward-biasedwhilethebase-collectorjunctionisreverse-biasedDisreversed-biasedwhilethebase-collectorjunctionisforward-biased第9题TheoutputorthecollectorcharacteristicsforacommonbasetransistoramplifiershowsthatasafirstapproximationtherelationbetweenIEandICintheactiveregionisgivenby_____.AIE=ICBIE>>ICCIE<<ICDIE≈IC第10题Inasmall-signaltransistor,thetypicalrangeoftheparameterαis_____.Agreaterthan1Bbetween0and1Calmostequalto1butalwayslessthan1(0.9to1.0.Dalmostequalto1butalwaysgreaterthan1(1.0to1.1.第11题Whichtransistoramplifierconfigurationisthemostcommonlyused?_____Acommon-emitterBcommon-collectorCcommon-baseDNoneoftheseareusedmoreoftenthantheothers.第12题ABJThasmeasureddccurrentvaluesofIB=0.1mAandIC=8.0mA.WhenIBisvariedby100μA,ICchangesby10mA.Whatisthevalueoftheβdcforthisdevice?__A80B10C100D800第13题WhenaBJTisoperatinginthesaturationregionthevoltagedropfromthecollectortotheemitterVCEisapproximatelyequalto_______.AthecollectorsupplyvoltageBthecollectorcurrenttimesthecollectorresistorCzero(about0.3Volts.Dtheemittervoltage第14题WhyisthearrowontheBJTschematicsymbolimportant?__AItidentifiestheemitterterminalandthetypeofBJT.BItidentifiesthecollectorterminalandthetypeofBJT.CItidentifiesthebaseterminalandthetypeofBJT.DNoneoftheabove第15题Whichofthefollowingexpressionsistrue?__Aβac=Bβac=Cβac=whereVCBisconstantDβac=whereVCEisconstant第16题Whichofthefollowingexpressionsistrue?__Aαac=Bαac=Cαac=whereVCBisconstantDαac=whereVCEisconstant第17题VCEismeasured______.AfromtheemitterterminaltogroundBfromthecollectorterminaltotheemitterterminalCfromthecollector-emitterjunctiontogroundDNoneoftheabove第18题Inmostcases,whichtwoofthethreeBJTterminalcurrentsareapproximatelyequalinvalue?__AcollectorcurrentandbasecurrentBcollectorcurrentandemittercurrentCemittercurrentandbasecurrentDAllcurrentsareapproximatelyequal.第19题Whichofthefollowingbiasingcombinationsisnotnormallyassociatedwithoneofthethreetransistoroperatingregions?____AE-Bjunction=forward,C-Bjunction=reverseBE-Bjunction=reverse,C-Bjunction=reverseCE-Bjunction=reverse,C-Bjunction=forwardDAlloftheabove第20题βistheratioof_____.AcollectorcurrenttoemittercurrentBbasecurrenttocollectorcurrentCcollectorcurrenttobasecurrentDemittercurrenttocollectorcurrent第21题AgivenBJThasanemittercurrentof12mAandabasecurrentof600μA.Whatisthevalueofβdc?____A20B21C19D200第22题95mA.Whatistheexactvalueofβ?____A300B299C1.003D250第23题AgivenBJT,β=400.Whatisthevalueofαforthedevice?____A1.0025B0.002C0.9975D1.00第24题AgivenBJThasanalphaof0.9985andacollectorcurrentof15mA.Whatisthevalueofbasecurrent?____A15.15mAB14.85mAC15mADNoneoftheabove第25题Agiventransistorhasratingsofmaximumcollectorcurrentequalto200mAandabetathatvariesbetween150and200.Whatisthemaximumallowablevalueofbasecurrentforthedevice?____A1mAB4mAC1.33mADNoneoftheaboveChapter4assignment第1题WhenaBJTisbiasedinthecut-offregion,itsbase-emitterjunctionis________-biasedanditscollector-basejunctionis________-biased.____Aforward;reverseBreverse;forwardCforward;forwardDreverse;reverse第2题WhenaBJTisbiasedinthesaturationregion,itsbase-emitterjunctionis________-biasedanditscollector-basejunctionis________-biased.____Aforward;reverseBreverse;forwardCforward;forwardDreverse;reverse第3题Calculatethebasecurrentforthiscircuit.____A0.904mAB0.96mAC0.056mAD6.0mA第4题Thisemitter-stabilizedbiascircuitisoperatinginthe_______.AsaturationregionBcutoffregionCactiveregionDThetransistorisnotproperlybiased.第5题Calculatethebasecurrentforthisemitter-stabilizedbiascircuit.____A89.0mAB89.0μAC0.119mADNoneoftheabove第6题Calculatethebasecurrentforthisvoltage-dividerbiascircuit.____A233.78μAB34.62μAC596.55μAD76.8μA第7题Calculatethebasecurrentforthiscircuit.____A28.4μAB20.2μAC28.3μADNeedmoreinformationtocalculatethebasecurrent第8题Whendesigningacurrent-gain-stabilizedvoltage-dividerbiascircuitsuchasthisone,theruleofthumbusedfortheemittervoltageis_____.AVE=VCC/10BVCE=VCC/10CVB=VCC/10DVC=VCC/10第9题WhenaBJTtransistorisusedinaswitchingcircuit,itoperatesinthe______.AsaturationandactiveregionsBactiveandcutoffregionsCsaturationandcutoffregionsDactiveregiononly第10题WhenaBJThasitsbase-emitterjunctionforwardbiasedanditscollector-basejunctionreversebiased,itisbiasedinthe______.AsaturationregionBactiveregionCcutoffregionDpassiveregion第11题WhenaBJThasitsbase-emitterjunctionreversebiasedanditsbase-collectorjunctionforwardbiased,itisbiasedinthe____.AsaturationregionBactiveregionCcutoffregionDpassiveregion第12题WhenaBJThasitsbase-emitterjunctionforwardbiasedanditscollector-basejunctionalsoforwardbiased,itisinthe_______.AsaturationregionBactiveregionCcut-offregionDpassiveregion第13题WhenaBJThasitsbase-emitterjunctionreversebiasedanditscollector-basejunctionreversebiased,itisinthe________.AsaturationregionBactiveregionCcutoffregionDpassiveregion第14题Themaximumcollectorcurrentforthiscircuitis_____.A1.13mAB12mAC6mAD1.0mA第15题WhenaBJTisincutoff,thecollector-to-emittervoltageistypicallyequalto_______.AcollectorsupplyvoltageBcollectorcurrenttimescollectorresistorC0.3VoltsDemittervoltage第16题ThechangeinβandVCEthatcanoccurwhenthetemperaturechangesisknownas______.AmidpointbiasBmidpointmovementCoutputmovementDQ-pointmovement第17题A(n.______isaddedtothefixed-biasconfigurationtoimprovebiasstability.AbasevoltageBemitterresistorCcollectorresistorDAlloftheabove第18题Theinputresistanceofastabilizedfixed-biascircuitconfigurationis_____.AinverselyrelatedtotheemitterresistorBinverselyrelatedtoβCdirectlyrelatedtothecollectorresistorDdirectlyrelatedtotheemitterresistor第19题Twoofthefactorsassociatedwithbiasstabilityare______.AvoltageandcurrentBtheβandthejunctiontemperatureCageandamountofuseDNoneoftheabove第20题Whenatransistorisinsaturation,thetotalcollectorcurrentislimitedby______.AcollectorsupplyvoltageandthetotalresistanceinthecollectorandemittercircuitsBcollector-to-emitterandcollectorsupplyvoltageCcollectorsupply,collector-to-emittervoltage,andthetotalcollectorcircuitresistanceDthetransistor第21题Theemitter-followerconfigurationhas_______.Aa180°phaseshiftBanoutputvoltageslightlygreaterthantheinputvoltageCtheemitterconnectedtodcgroundpotentialDNoneoftheabove第22题Inthedesignofanemitter-biasstabilizedcircuitengineering,judgmentmustbeusedbecausethe______.AcollectorresistorisusuallyunknownBemitterresistorisusuallyunknownCrelativevoltagelevelshavenotbeendefinedDAlloftheabove第23题Whendesigningforbestbiasstabilitythe_______configurationshouldbechosen.Avoltage-dividerbiasBcollector-feedbackbiasCfixed-biasDemitter-feedbackbias第24题Whendesigningavoltage-dividerbiascircuit,thedividerresistors_____.AshouldcarryapproximatelyequalcurrentBshouldcarrycurrentsthatare10timesthebasecurrentCdeterminethebasevoltageasthedropacrossbase-commonresistorDAlloftheabove第25题Whyisdesignforaspecificbiaspointdesirableformostamplifiers?____ATomeetmanufacturersuggestedopeningpoint.BItallowsoptimumacoperationofthecircuit.CItallowsoptimumdcoperationofthecircuit.DAlloftheabove第26题Therearetransistorsthatarecalledswitchingtransistorsbecause_____.AtheyhaveabuiltinswitchBofthespeedatwhichtheycanbechangedfromontooffCofthepowertheycantransferfrominputtooutputDofthevoltagetheycantransferfrominputtooutput第27题Transistorcircuitsthatarequitestableandrelativelyinsensitivetotemperaturevariationshave______.ArelativehighsupplyvoltagesBlowsupplyvoltagesClargebetasDsmallbetas第28题Todesignatransistorcircuitformaximumstability,onemustconsider______.AthecollectorleakagecurrentstabilityfactorBthebase-emitterjunctionvoltagestabilityfactorCthetransistor'sbetastabilityfactorDAlloftheabove第29题Variationinhfeisinfluencedby______.AjunctiontemperatureandcollectorcurrentBtemperatureandbasecurrentCbiastypeanddevicesizeDdevicesizeandbasecurrentChapter5assignment第1题TheinputimpedanceofaBJTis______.AresistiveBcapacitiveCinductiveDacombinationofresistive,capacitive,andinductive第2题TheoutputimpedanceofaBJTis______.AresistiveBcapacitiveCinductiveDacombinationofresistive,capacitive,andinductive第3题Foratwo-portsystem,likeaBJTamplifier,theno-loadvoltagegain_____.AisalwaysgreaterthantheloadedvoltagegainBisalwayslessthantheloadedvoltagegainCisalwaysequaltotheloadedvoltagegainDcanbelessthanorequaltotheloadedvoltagegain第4题Dependingontheconfigurationoftheamplifier,themagnitudeoftheno-loadvoltagegainforasingleBJTtransistoramplifiertypicallyrangesfrom_______.A10toabout10,000BahundredtoaboutamillionCjustalittlelessthan1toafewhundredDNoneoftheabove第5题Dependingontheconfigurationoftheamplifier,themagnitudeoftheno-loadcurrentgainforasingleBJTtransistoramplifiertypicallyrangesfrom_____.A10toabout10,000BonetoaboutathousandCjustalittlelessthan1toalevelthatmayexceedonehundredDNoneoftheabove第6题Determinetheinputimpedanceforthistwo-portnetworkwhenVS=50mV,Ii=20μA,andRsense=500Ω.___A2000ΩB20.0kΩC200.0kΩD2.0MΩ第7题Theh-parametermodeluses______parameterstodescribetheequivalentcircuitoftheBJTtransistor.AtwoBthreeCfourDfive第8题Determinetheequivalentvaluesforβandre,giventhefollowingh-parametermodelvaluesforacommon-emitteramplifier:hie=1450kΩ,hoe=17.5μSk,hfe=125,andhree=0.4×10-3.____A17.5μSand0.4×10-3B125and1.450kΩC1.450kΩand17.5μSD0.4×10-3and125第9题Theapproximationthatallowssuperpositiontobeusedtoisolatetheacanalysisandthedcanalysisofsmall-signalamplifiersisthatthecircuitresponseis_______.Anon-linearBlinearCdclinearandacnon-linearDdcnon-linearandaclinear第10题A_____isacombinationofcircuitelements,properlychosen,thatbestapproximatetheactualbehaviorofasemiconductordeviceunderspecificoperatingconditions.AcircuitBschematicCmodelDmonolithicIC第11题Giventhisconfiguration,determinetheinputvoltageifVS=40mV,Rsense=0.5kΩ,andtheinputcurrentis20μA.___A55mB40mVC35mVD30mV第12题Calculatethevoltagegainforthiscircuit.___A-137.25B-8.4C-7.91D-16.34第13题Determinetheinputimpedanceforthisamplifiercircuit.___AR1∥R2∥(βre.BR1∥R2C(βre)DCannotbedeterminedfromtheinformationgiven第14题Thecommon-emitteramplifierhas_______.Avoltagegain,currentgain,andpowergainBvoltagegainandpowergain,butnocurrentgainCcurrentgainandpowergain,butnovoltagegainDcurrentgainandvoltagegain,butnopowergain第15题Afixed-biasBJTcircuithasvaluesofhFE=200andhfe=120.Theaccurrentgainforthedeviceis______.A200B120C24,000D320第16题Whichtransistoramplifierconfigurationhasa180°voltagephaseshiftfrominputtooutput?___Acommon-emitterBcommon-collectorCcommon-baseDNoneoftheabove第17题Thecommon-baseamplifierhas_____.Avoltagegain,currentgain,andpowergainBvoltagegainandpowergain,butnocurrentgainCcurrentgainandpowergain,butnovoltagegainDcurrentgainandvoltagegain,butnopowergain第18题Forthecascadedamplifiershownhere,theoutputvoltageVo2is_____theinputvoltageVi3.AlessthanBlargerthanCmuchlargerthanDexactlyequalto第19题Forthecascadedamplifiershownhere,inputimpedanceZi2is_____theloadresistanceforAmplifier1.AlessthanBlargethanCexactlyequaltoDCannotbedeterminedfromtheinformationprovided第20题Iftheresistorintheemitterlegisnotbypassedbyacapacitorthentheinputimpedanceofthesmallsignalamplifierwill_______.AincreaseBdecreaseCstaythesameDincreaseinsomecasesanddecreaseinothercases第21题Iftheresistorintheemitterlegisnotbypassedbyacapacitorthenthevoltagegainofthesmallsignalamplifierwill______.AincreaseBdecreaseCstaythesameDincreaseinsomecasesanddecreaseinothercases第22题Thecommon-baseamplifierischaracterizedashavingarelatively________inputimpedanceandrelatively________outputimpedance.___Alow;highBlow;lowChigh;lowDhigh;high第23题Ifabypasscapacitoropens,thevalueofre______.AincreasesBdecreasesCremainsthesameDgoestozero第24题Amplifieracinputandoutputcurrentsare_______.Aalways180°soutofphaseB180°outofphaseinallbutoneamplifierconfigurationCinphaseinallbutoneamplifierconfigurationDalwaysinphase第25题Amplifieracinputandoutputvoltagesare______.Aalways180°outofphaseB180°outofphaseinallbutoneamplifierconfigurationCinphaseinallbutoneamplifierconfigurationDalwaysinphaseChapter6assignment第1题ThemaximumcurrentinaJFETisdefinedasIDSSandoccurswhenVGSisequalto_______.AzeroVoltsBpinch-offvoltageCasmallpositivevoltageDavoltagegreaterthanthepinch-offvoltage第2题Forann-channelJFETIDSS=8mAandVp=-6Volts.IfID=6mA.Whatisthevalueofthegate-to-sourcevoltage,VGS?__A-0.8VB-1.5VC0.1335VD-4.5V第3题ThedraincharacteristicsforaFETthatyouseeonacurvetraceraredrawnforequalstepincreasesintheVGSvalues,yettheyarespacedfurtherapartasVGSgetsclosertozero.Why?__AThisistrueforonlysomeFETdevices,notall.BThecurvedependsontheFETdeviceused.CDuetothesquarerelationbetweenIDandVGS,asVGSgetsclosertozeroIDincreasesfastersothecurvesarespacedapartfurther.DNoneoftheabove第4题ThedepletiontypeofMOSFETcanoperateinthe_______.AdepletionmodeonlyBenhancementmodeonlyCinthedepletionmodeandtheenhancementmodeDNoneoftheabove第5题TheJFETisa_______.Avoltage-controlleddeviceBcurrent-controlleddeviceCfrequency-controlleddeviceDpower-controlleddevice第6题The______terminaloftheJFFTistheequivalentofthecollectorterminalofaBJT.AgateBdrainCsourceDanode第7题The_______terminaloftheJFETistheequivalentofthebaseterminalofaBJT.AgateBdrainCsourceDanode第8题The______terminaloftheJFEI'istheequivalentoftheemitterterminalofaBJT.AgateBdrainCsourceDanode第9题The_____JFETusesapositivedrainsupplyvoltage.An-channelBp-channelCMDSDCMOS第10题Thelevelofdrain-to-sourcevoltagewherethetwodepletionsregionsappeartotouchisknownas_______.AthedepletionzoneBchannelestablishmentCpinch-offDchannelsaturation第11题TheregionofthecharacteristiccurvefamilyforthejunctionFETthatisnormallyusedforlinearamplificationis______.Atheconstant-currentregionBthesaturationregionCthelinearamplificationregionDAlloftheabove第12题AsthechannelwidthofaJFETdecreases,thesource-to-drainresistance_______.AincreasesBdecreasesCremainsconstantDisnotaffected第13题Thevalueofdraincurrentisalways_______thevalueoftheshortcircuitdraincurrentIDSSforagivenJFET.AlessthanBequaltoClessthanorequaltoDgreaterthan第14题CMOSstandsfor______.AcomplementaryMOSBcurrentMOSCcapacitiveMOSDconductiveMOS第15题Arelativelyhighinputimpedance,fastswitchingspeeds,andlowoperatingpowerdescribethecharacteristicsofthe_______family.ABJTBenhancement-typeMOSFETCVMOSFETDCMOSFET第16题Forann-channeldepletionMOSFETIDSS=8mAandVP=-6V.IfID=0.0095A,whatisthevalueofthegate-to-sourcevoltage,VGS?__A0.54VB-0.54VC0.1335VD6.54V第17题Enhancement-typeMOSFETsoperateinthe_______.AdepletionmodeonlyBdepletionmodeandtheenhancementmodeCenhancementmodeonlyDNoneoftheabove第18题Thecollectorcurrent,IC,ofaBJTflowsthroughtwojunctions.ThedraincurrentofanFET,ID,flowsthrough_______junctions.A0B1C2D3第19题ManyMOSFETdevicesnowcontaininternal_______thatprotectthesedevicesfromstaticelectricity.ABJTtransistorstobypassthestaticchargeBback-to-backzenerdiodesCcapacitorstocollectandstorethestaticchargeDNothingcanbedonetoprotectthesedevicesfromaccidentalstaticdischargeexceptverycarefulhandling.第20题Thevalueofgate-to-sourcevoltagethatcausesthedraincurrenttoreachitsmaximumvalueatagivenvalueofdrainvoltageiscalled_______.AVDMAXBpinch-offvoltageCVDSSDNoneoftheabove第21题WhattwoparametersrepresenttheFETtransfercharacteristic?__Adrain-to-sourcevoltageandgate-to-sourcevoltageBdrain-to-sourcevoltageanddraincurrentCgate-to-sourcevoltageanddraincurrentDgatecurrentanddraincurrent第22题AJFEThasvaluesofIDSS=mAandVGSOFF=-5V.WhatisthevalueofIDatVGS=-3V?__A1.6mAB3.6mAC25.6mAD4mA第23题Theenhancement-typeandthedepletion-typeFETsaresubclassesof______.AjunctionFETBmetal-oxide-semiconductorFETsCBJTsDbipolarFETs第24题Thedepletion-typeMOSFET'hasspecificationsandmanycharacteristicsthataresimilartothe______.ApnpBJTBnpnBJTCJFETDNoneoftheabove第25题WhichofthefollowingFETsisthebestchoicewhenthegate-sourcevoltagehasbothpositiveandnegativeswings?___AJFETBenhancementMOSFETCdepletionMOSFETDCMOS第26题MOSFETstypicallyhaveaninputimpedancevaluethatis______.AhigherthantheJFETBlowerthantheJFETCequaltotheJFETDrandomlydefinedrelativetotheJFET第27题MOSFETsarealso