2025英飞凌消费、计算与通讯创新大会：人工智能数据中心向更高总线电压的演变及可用解决方案

人工智能数据中心向更高总线电压的演进及可用解决方案Owen

Song高级首席工程师英飞凌科技有限公司消费，

计算与通讯事业部public数据中心总线电压的演进[Watt]AI

GPU/

TPUCPUsRelease

dateSources:IEA

includingcrypto

miningenergy

use;

Infineonassumptionandcalculation;

McKinsey,

BCG2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary37%ofglobalelectricityconsumption2%ofglobalelectricityconsumption全球数据处理量的指数增长及人工智能数据中心电能需求量剧增Projectedelectricityconsumptionofdata

centersSingle

processorelectricitydemandovertime2,0001,5001,0005000250020001500100050002008

2010

2012

2014

2016

2018

2020

2022

2024

2026

2028

2030ICIC20252016201820192020202320252026202820292030201520212022202420172027[TWh]人工智能服务器推动耗电量的增大HyperscaleServer

RackA100NVIDIAGB200AIServer

Rack*Next

gen

Rack

<250

kW36

PSUsX8kW/12kW>2030Infineon

Proprietary

4~202*

Source:

Computex

Ta

ei,

June

2nd

202440

CPUs30

kW2

powershelfs12

PSUsx

3

kW

(N+1

redundancy)6

powershelfs36

PSUsx

5.5

kW

(N+N

redundancy)N+

genRack>1

MWCopyright©

InfineonTechnologiesAG2025.Allrightsreserved.72GPUs/

36

CPUs

120

kWPowershelf

12025-03-01

public20222024Powershelf

2PowershelfICIC2025ploss_400v

=

ploss_

50v

‒

降低总线损耗Bus

power

loss:p

loss-bus

=

I

bus

2

R

bus

pout

=

I

bus

*

u

busp

loss-bus

=

(

)2

R

busk=

u

bus2

‒

降低总线成本800V(

±400V)2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary5

数据中心机架总线电压演进的意义400V12V50V=

ploss_

12vICIC2025Source:OCP

2024+/

-400Vdc

RackforAL/MLApplicationsXiao

Li,

KrishnanjanGubba

Ravikumar,Cristiana

Peaboy,Google2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary6数据中心机架总线电压的演进ICIC2025OCP

ORv31or

2

Power

shelves50VIT

shelfPSU

PSU

6

PSUs/shelfN+1

or

N+N230-277V

ACBBU

48V2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary7当前人工智能数据中心机架供电架构50*OCP:

Open

Compute

Projecthttps://w/aboutDC-DC50V

-12VDC-DC12V

-1V(CPU,GPU)w/

Ch

rg/Dchrg

6

BBUs

/

shelfPSUBBUBatteryshelf400V-480VRackICIC20253Ф+800V

dc0V-400V

dc/LFTSSTACDC未来高功率(>250KW)人工智能数据中心机架供电架构（预测）600Vac400Vac/

Side-car

BUS2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary8DCDC

DCDCDCDCDCDCDCDCDCDCVRM/POL50V

12V

+400V

dc/+800V

dc-400V

dc/-800V

dcCompute

rackACDC+400V

dc/-800V

dc13.2KV50VHVDC0Vx.xVACDC25交流输入到高压总线的可用方案Source:OCP

2024+/

-400Vdc

RackforAL/MLApplicationsXiao

Li,

KrishnanjanGubba

Ravikumar,Cristiana

Peaboy,Google2025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary10400V?

±400V?800V

？或者更高压?ICIC2025(Vienna

Rectifier)DCX400VJ.

Huber,

P.Wallmeier,

R.

Pieper,

F.SchafmeisterandJ.W.

Kolar,"Comparative

Evaluationof

MVAC-LVDCSST

and

HybridTransformer

Concepts

for

Future

Datacenters,“IPEC-ECCEAsia,2022,doi:

10.23919/IPEC-Himeji2022-ECCE53331.2022.98070282025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary11如何从交流输入到高压总线3-ϕ

PFCICIC2025Qa

Qc

Q

Q1

Q2Q3

Q4Q5

Q6Qb

Qd

Qf‒

400Vor

±400Vor

800V

output‒D1~D6:

1200VS

iC

diode‒Qa~Qf:

1200VS

iC

MOSFET‒Q1~Q6:

MOSFET,SiC

MOSFET,GaN(BDS)三相

PFC：

由于非隔离的原因不太可能单独应用‒

400Vor

±400Vor

800V

output

‒Q1~Q12:650VS

iC

MOSFET,GaN2025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary12‒800Voutput‒

W1~W6:

1200VS

iC

MOSFET(800V)ICIC2025*(800V)‒

AC/DC(PFC)

Stage1200V

S

iC

MOSFET

650V

GaN

or

SiC

MOSFET•Three-phase

Unity

Power

Factor

Mains

Interfacesof

High

Power

EV

BatteryChargingSystems,

M.Hartmann,T.

Friedli,J.W.

Kolar,ETH400V/800VLLC2025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary13Pri:650VGaN

or

650V

S

iC

MOSFETSec:

1200VS

iC

MOSFET三相PSU-与充电桩设计类似+400V-400VCascadedLLC‒

DC/DC

Stage3-levelLLC400V/800VICIC2025Comparative

Evaluationof

MVAC-LVDCSSTand

HybridTransformerConceptsfor

Future

Datacenters,J.

Huber,J.W.

Kolar,P.Wallmeier,R.

Pieper,

Proceedings

of

the

International

Power

Electronics

Conference

20222025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary14固态变压器(SST-Solid

State

Transformer)-未来极具潜力(

±400V，

800V)ICIC2025A

Modular

MultilevelConverter(MMC)

BasedSolid-StateTransformer(SST)TopologyWithSimplified

Energy

ConversionProcessand

Magnetic

Integration,GengzheZheng,YuChenandYong

Kang,

IEEETRANSACTIONSON

INDUSTRIALELECTRONICS,VOL.68,

NO.9,SEPTEMBER

20212025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary固态变压器(SST)

方案ICIC202515Peter

Barbosa,

NextGeneration

Power

Distribution

in

DatacenterCPES

ElectrifiedGreen

InfrastructureWorkshop,

Delta

Electronics2025-03-01publicCopyright©

InfineonTechnologiesAG2025.All

rights

reserved.Infineon

Proprietary固态变压器(SST)方案ICIC202516从高压总线到中压总线的可用方案+800V

dc0V-400V

dc/LFTSSTACDC未来高功率(>250KW)人工智能数据中心机架供电架构（预测）600Vac400Vac/

Side-car

BUS2025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary18DCDC

DCDCDCDCDCDCDCDCDCDCVRM/POL50V

12V

+400V

dc/+800V

dc-400V

dc/-800V

dcCompute

rackACDC+400V

dc/-800V

dc13.2KV50VHVDC0Vx.xVACDC25‒Q5~Q8,Q13~Q16:80V

MOSFET

or

GaN2025-03-01publicCopyright©

Infineon

TechnologiesAG

2025.All

rights

reserved.Infineon

Proprietary19-400V/0‒Q1~Q4:650VS

iC

MOSFET/

650V

GaN(400V

busvoltage)or

1200VS

iCMOSFET(800V

busvoltage)高压直流直流变换方案（稳压？

非稳压？

）+400V/800V50V400V/800V0‒Q1~Q4,Q8~Q12:650VS

iC

M