2025英飞凌生态创新峰会：下一代电控功率砖解决方案

张昌明英飞凌大中华区汽车业务市场部动力与系统业务单元下一代电控功率砖解决方案1

下一代电控的思考与技术突破点

32

封装技术创新驱动多样化的系统设计

73

拓扑结构升级推动电驱系统的效能提升

2112June2025Copyright©

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reserved.2Tableofcontents1

下一代电控的思考与技术突破点

32

封装技术创新驱动多样化的系统设计

73

拓扑结构升级推动电驱系统的效能提升

2112June2025Copyright©

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rights

reserved.3Tableofcontents1400000120000010000008000006000004000002000000201720182019202020212022202320242025中国新能源汽车持续增长，

渗透率>50%

纯电动

插电式汽油和电混合动力

增程式混合动力100%90%80%70%60%50%40%30%20%10%0%12June2025Copyright©

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rights

reserved.42017

2018

2019

2020

2021

2022

20232024

20251

2

3

4

5

6

7

8

9

10

11

1212June2025Copyright©

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reserved.5o无磁芯电流传感器o驱动芯片o功率模块o散热组件o

电容组件功率砖（Power

stack)的组成部分封装形式拓扑结构12June2025Copyright©

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reserved.6下一代电控功率砖的创新点1

下一代电控的思考与技术突破点

32

封装技术创新驱动多样化的系统设计

73

拓扑结构升级推动电驱系统的效能提升

2112June2025Copyright©

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reserved.7Tableofcontents功率模块的开发目标更大的A/mm2输出，

更低的杂散电感12June2025Copyright©

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reserved.8框架式模块进一步优化性能，

并持续采用现有的生产线配置HPD

G3模块提供>900Arms及<5nH的下一代封装Long

lifetime/

high

powercycling

capabilityto

covereCVapplication

requirementsHPD

G3HPDG3

smallVery

high

powerdensity(Tvj

up

to

200°C/

225°C)Suitable

for

systems

with

battery

voltage

up

to920VLowstray

inductance≤

5nH

for

HPD

G3State-of-the-art

Automotive

CoolSiCTM

Gen3TechnologyScalable

portfolioHPD

G3for

~450Arms

to

~900Arms,HPD

G3

Small

for<450Arms@1200V12June2025Copyright©

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reserved.9Howachieved?>

Newchiptechnology(CoolSiCTM

Gen3p)>

Layout

optimization>

SSC

Mediumoutputoptimizedto

mainvolume

inthe

marketseen

(~530Arms@

1200Vdss/~750Arms@

750Vdss)>

SSC

Largefor

high

power

requirementsOutcome:>SSCSmall:

best

inclass

powerdensity

on

package

size

used

→allowingreal

invertersizeshrinkage>SSC

Medium,

Large:Compatible

to

SSC

Small

(Pinning,Length,

Height)

→allowing

real

scalability

at

customerSSC

Medium-39%*

极具扩展性的HybridPACK

SSC塑封功率模块12June2025Copyright©

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reserved.10适用于不同功率等级的需求*Volume

comparison

(package

incl.

powertabs

excl.

pins)1st

conceptSSC

Large66x

30

mm66x

40

mm66x

50

mm-64%*-51%*SSC

SmallSSCPotential

integration•Step

1:Attach

process

modulesto

heat

sink•Step2:Attach

processframe

(incl.

pins)

to

heat

sink

(screw

holes

onframeand

heatsink)•Step

3:Attachframeto

signal

pads

on

power

modulesCustomer

benefits•Improved

position

accuracy

of

Pin

to

PCB

after

system

attach•Customercan

choose

his

own

pin

+

position

of

the

pins•→

Enables

also

easier

connection

offurthercomponentstothe

PCB

(e.g.

Excitation

module*)内绝缘的SSC模块支持客户的各种客制化设计可锡焊于铝热器，

降低重量和成本12June2025Copyright©

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reserved.11*

Potential

solutionwith

additional

excitation

moduleshown

above.Nextsteps‒Wave

1:CoolSiC

Gen3(p)in

SSC

M

and

L

(5

products),

1.Product

PPAP‒Wave2:CoolSiC

Gen3(p)in

SSC

S,

CoolGAN650V

in

SSC

M内绝缘的SSC模块支持客户的各种客制化设计可锡焊于铝热器，

降低重量和成本Support400/800V

platform

and

diversifiedstructuredesign650VCoolGANIn

evaluation1200VCoolSiCup

to~370

Arms**12June2025Copyright©

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reserved.12up

to~400

Arms**up

to~600

Arms**up

to~750

Arms**>750

Arms**750VCoolSiCup

to~560

Arms**up

to~530

Arms**up

to~650

Arms**‒In

preparation:

NextGen

SiC,

Fusion,

BDSQ3/27,

+3months

for

follow

up

variants***Discrete

IGBT/SiCDirect

cooled

inverter

power

stack-

EDT2/SiC

in

TO247

Reflow

Goto

Market-

Targetting400V&

upto

100kW

traction

inverters-Power

stack

referencedesignwithreflow

soldered4-Pin

devicesdesigned

byJingjuan9

cm-

750V

EDT2Technology-Proofofconceptof

attaching

devices

with

soldertothe

heatsink

to

increasethermal

conductivity

by40%-Resistivewelded

busbar-Minimizethe

bill

of

material-Provideassembly

optiontooptimized

performanceand

costReflowsoldering

improves

thermal

conductivity

by40%Cost

optimized12June2025Copyright©

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reserved.132xAIKYX200N75CP2

in

parallelProductfeatures16cm

5cmS-Cell:㠌入PCB式SiC芯片驱动功率器封装技术创新功率组件杂散电感<2nH12June2025Copyright©

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reserved.14Lower

power

loop

inductanceenabled

by

S-cell

allowsto

use

lowergate

resistancevalues

resultingin

reducedswitching

losses

→higherdriving

cycle

efficiency

→extended

mileage*Etot

fromspicesimulationLloop

=

12.5

nHLloop=

8

nH

-20%Lloop

=

6

nH0200400600800

ID

[A]S-Cell功率系统极大的降低系统杂散电感和降低器件损耗Vbus

=800V,Tvj

=

175°C,Vgs

=-5V/18V,

100

mm2

of

SiC

area12June2025Copyright©

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reserved.15Etot

topological

switch

Vds,max

<=

1.1

kVdV/dt

unlimitedEtot

topological

switch

Vds,max

<=

1.1

kVdV/dt≤

20

V/nsEtot

topological

switch

Vds,max

<=

1.1

kVdV/dt≤

40V/ns0200400600800ID

[A]0

200

400

600

800ID

[A]Lloop

=

12.5

nHLloop

=

8

nHLloop

=

6

nHLloop

=

12.5

nHLloop

=

8

nHLloop

=

6

nHdV/dt

increasedto40V/ns605040302010060504030201006050403020100NodV/dt

limitationEtot

[mJ]Etot

[mJ]Etot

[mJ]-34%-68%AIMCE120R011M2P*(1200V

G2p

11ma,typ

25mm2S-Cell)

Currentcapability**Assumptions:Rth,j-f

0.6

K/WdV/dt40V/nsTf

65

°Cfs

10kHzrds,on

20.9

mΩtyp.Tvj,max

175°C***

Inverter

workingconditions:vdc

800Vm

0.9cos(φ)

0.8512June2025Copyright©

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reserved.16*rds,on,typ

25°C

=

10.6

mOhm

rds,on,typ

175°C

=

20.9

mOhm300kW***480Arms**150kW***75kW***225kW***240Arms**360Arms**Estimation

basedontypical

RDS(on)Perfect

(ideal)currentsharing

assumedPhase

current120Arms**Boosting

Inverter

EfficiencyandSiCArea

UsageUniqueMulti-levelslew

rate

control‒decoupled

5

ON

&

5

OFF

options

→

upto

35%

loss

saving

over

WLTP‒

Dynamic

boost

modes

reducing

switching

losses

at

peakcurrents

→saving

upto17%

SiC

area!Boosttd(ON)TON100VgsGateVoltageVgs,thIdsVdsAdvanced

System

Cost

DownSaving

up

to5€external

Inverter

BOM1

‒ASIL

compliant

&

fast

HV-DCmeasurementand

monitoring

unit‒Flyback

controller

incl.

internal

feedbackforhighestVCC2

accuracy

(<2%

Error)VBATNo

pre-regulatorneeded.

12VVBAT

OKVEE21savings:

isolatedADC&comparatorunit,2x

pre-regulators,

6x

ext.

FBcontroller,6xAUXwinding

&6x

secondary

LDOBest-in-class

MonitoringforlatestSiC

power

stages‒

Fastest

DESAT

incl.

digitalfilteringfor

<<1us

SC

detection

&

reaction‒AccurateVDS/VCE

measurementduringON

time

for

sensorless

Tj

estimation

&

RDSON

lifetime

monitoringEiceDRIVERTM

1EDI304xAS–the

mostadvanced

isolatedgatedriverfor

traction

Inverterscombining

highest

performancewith

lowestsystemcostFly

backControllerISENSETOUTPVariantsFunctiondifferences1EDI3040ASDevicewith

Flyback

Controller1EDI3041ASDevicewithout

Flyback

ControllerVCC2GND212June2025Copyright©

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reserved.17SiCSamples&

Eval

BoardsavailableEiceDRIVERTM

1EDI3040ASVCC2

FlybackfeedbackVCC2VCC2

and

VEE2

monitorVCC2-

2.1VDriveProfileTON100L1TON30CTVEE

2Total

loss

savingsof

upto42.7%

switching

loss

reductionachievable,

equivalentto35%

less

inverter

power

lossesduringafullWLTPcycle

(30

min

duration)TotalswitchinglossreductionoverfullWLTP

cycleTON30/TOFF30Slewrate

ONConduction

losses

Switching

losses12June2025Copyright©

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reserved.18180160140120100806040200-42.7%switching

loss

reductionEnergy

spent

duringWLTPSwobodacurrentsensormodulescalable

for

complete

HybridPACK

Drive

G2portfolioBasedonTLE4973

core-lesstechnologyScalableforcompleteHybridPACKDrive

G2

portfolio12June2025Copyright©

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reserved.19Sensor

IC

FluxConcentratorQS

availableCore-lessCore-basedBus

barBus

barSensor

IC23mm12mm-Hall

+

Coil

sensorwith

low

noise

and

high

sensitivity

to

measurefrom600Ato

2000A

on

external

busbar-High

accuracywith

<2%

low

drift

over

temperatureand

lifetime-

Bandwidth

>400kHz

andfastanalog

output-

Lowvoltage

onewire

DCDI

programing-

Sensitivity

calibrationfrom

137mV/mTto

412mV/mTcontinuous-Accurate

temperature

sensor

reading

during

continuous

operation-Fullsignal

pathdiagnostic

capability-

SSO4

packageWideleadsto

rugged

againstvibrations-

MSL3

suitableforSMD

soldering-

AECQ-100

qualified,grade

0-

Simpleand

low

costvertical

assembly

in

busbar

slit-

Widerangecalibration

to

compensate

errors

dueto

initial

assemblytolerances-Fastanalog

outputforfast

protection-Reliable

package

againstvibration

in

automotive

environment-

One

microcontroller

pincan

calibrate

upto8

sensorsApplicationsTLE4975with

eCR

in

SSO4

package

for

vertical

mountingCentral

PV

invertAutomotiveIndustrial&

ConsumerTheTLE4975

isa

low

noise

Hall

+

Coilcurrent

sensor

in

a

leaded

SSO4

package.

This

is

a

unique

solution

inthe

market.Features(preliminary)Advantages

&Applicationsvoo

Aour12June2025Copyright

©

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rights

reserved.202024Q3◆2025Q4◆2026Q2Timeline

(as

of

Q12025)

NewPreliminarydata,subjectto

changeduringdevelopmentProjectstartEES

ES

SOPDescriptionQ3Q4Q4Q1Q3Q1Q2Q2Q11

下一代电控的思考与技术突破点

32

封装技术创新驱动多样化的系统设计

73

拓扑结构升级推动电驱系统的效能提升

2112June2025Copyright

©

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AG

2025.All

rights

reserved.21TableofcontentsPeakPower

DemandVehicle

performanceasdescribedby

top

speed,

maximum

accelerationand

hill

hold

have

directinfluenceon

powertrain

costas

motorand

traction

inverter

haveto

bedesignedto

meetvehicledynamics

expectationsfrom

customers.Partial

Load

EfficiencyPartial

loadefficiencyofthe

powertrain

has

an

indirect

influenceonsystem

costas

powertrain

efficiencycan

be

utilizedto

downscale

battery

capacityto

meet

rangeexpectationsfromcustomers.Peakpowerdemandandpartial

load

efficiencyKey

requirementsdrivingsystemcostinvehicleelectrificationPhasecurrentSpeed12June2025Copyright

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reserved.22Representative

Powertrain

CharacteristicsSource:

EffectsofSiCMOSFETtraction

inverters

inthe

electric

vehicle

drivetrain

PCIM

2018Torque Switching

loss

[w]

Conduction

loss

[w]Designconsiderations-Primaryaxle

always

engagedandsufficientlydimensioned

to

cover

>90%

of

WLTP

drive

cycle-

2nd

axle

providesadditionaltorqueto

provide4wheel

drive

capability

and

maximum

performanceScalingvehicle

peakperformancebyaddinga

IGBT

based2nd

axle

isacommonsolutiontobalanceefficiencyand

costIGBTSiC4211

17292639

329423066371251

4751085231543

662nd

axel

approach-

SiCfor

higherefficiency-

Siforcost

effective

peak

powerPower

module

loss20%

Pmax@Vbr

750V50%

Pmax@Vbr750V100%

Pmax@Vbr750V12June2025Copyright

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reserved.23IG

BTSICIG

BTSICIG

BTSICappying30%SIC

area

enables76%gain

towards

to

the

full

SIC

solutionFull

SiFusion

Full

SiCBOM

Costs

[€]*Inverter

Efficiency

measurment>Adding

ofSiC

enables

high

efficiency

increase

inWLTP

drive

cycle>Reduction

of

SiC

chip

area

enables

decrease

ofchip/

modulecosts>

76%efficiency

gain

with30%of

full

SiC

chip

areapossibleWLTP

Efficiency

Gain

for470V

Power

Net

Architectures12June2025Copyright

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reserved.24Qua

l

itat

ive

Illustration

significant

cost

down

Fusionefficincy

≈98%

(30%SiC

&70%

Si)

slight

efficiency

decrease

WLTP*efficiencySiCefficincy

≈98,4%100%

efficiency76%

efficiency96/97%Siefficiency

≈LowestSystem

Cost*175kW/400VBattery

Cost[105€/kWh][85€/kWh][65€/kWh]Battery

Size22kWhFusionSiSi45kWhFusionFusionFusion75kWhFusionFusionFusion95kWhSiCSiCFusionInfineonfusionswitchconceptsignificantlyreducesthe

rangegap

betweenSiandSiCwhileofferinganattractivecost

position12June2025Copyright

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reserved.25+2,9%+3,5%Si2CSiCSi400V

BEV175kW2WD*evaluation

assumes

equivalentWLTPrange

&2027cost

predictionsFirst

Si/SiC

fusion

module

concept(Si2C)significantly

exceeding

performanceexpectationswithoutaddingsystemcomplexityInfineon

solution

offers

compelling

cost-performance

ratiowithout

adding

system

complexity

forcustomers12June2025