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3UnitMoore’sLaw:Toevolveortoexpire?集成电路英语EnglishforIntegratedCircuitsAfterstudyingthisunit,youwillbeableto:illustratethelimitsoftransistorscalingandthenewideasforcomputing;analyzethenatureandfutureofMoore’sLaw;describetheBigChipdevelopedbyChineseresearchers;debatewhetherMoore’sLawremainsareliableguidingprinciple.Learning
objectives集成电路英语Englishfor
IntegratedCircuitsGettingonthestageUnlocking
thetopicViewingthroughthelensShowcasingChina’stechadvancesExploringthefrontierCONTENTS集成电路英语Englishfor
IntegratedCircuitsSettingthesceneFordecades,theobservationthatthenumberoftransistorsonamicrochipwouldroughlydoubleevery18to24monthshasservedasafoundationalguidelineforthedevelopmentofthesemiconductorindustry.However,astransistorsizesapproachtheatomicscale,physicallimitsmakefurtherminiaturizationincreasinglydifficultandeconomicallyunsustainable.Thishassparkedanintensedebate:WhilesomearguethatMoore’sLawremainsrelevantthrougharchitecturalinnovationsandnewmaterials,otherscontendthattheeraofpredictable,cost-effectivescalingiscomingtoanend.Inthisunit,youwillexploreMoore’sLawandthetechnologicaladvancesassociatedwithit,andtakepartinanengagingdebateonwhatthefutureholdsforMoore’sLaw.Scanthecodeandcompletethe
technicalvocabularyexerciseonUcampus.quantumtunneling
n.量子隧穿electronn.
电子leaky
a.(电容器等)漏电的nanoampere
n.纳安gatevoltage
n.
门电压compromisevt.
损害subatomic
a.
原子内的Wordbank
1.Howmightcomputingevolveasexponentialprogressreachesitslimits?Watchthevideoclipandcompletetheoutlinewithwhatyouhear.(Withsubtitles)(Withoutsubtitles)WhyanexponentialgrowthisdyingQuantumtunneling:Transistorsbelowacertainsizeareunabletoblockelectronflow.The1)_________________insize:Currenttransistorsareslowlyapproachingtheirminimumpossiblescale.physicallimit2)effects:Astransistorsgetsmaller,leakagecurrentincreases;raisingthe3)_________________canhelpreducethisleakage,butitalsogeneratesadditionalheat.FuturetrendsincomputingQuantumcomputershavethepotentialtobethousandsoftimesmorepowerfulthancurrenttechnology.Neuromorphiccomputingishighlyeffectivefor4)________________________thatchallengetraditionalchips.ThermalgatevoltagepatternrecognitiontasksPotentialchallengesincomputingQuantumcomputersrequirecoolingtonear5)______________.Bothapproachesrelyonfundamentallydifferent6)__________fromthatofconventionalcomputers.absolutezerologicScan
the
codeformorecomprehensionexercisesonUcampus.
ScriptsWhentransistorsmeettheirlimitsSomeresearchersbelievethatMoore’sLawwilldieinthenextdecadeorso.Whyisthistechnologicalexponentialgrowthdying?Well,thefirstproblemisquantumtunneling.Aswereducethesizeofatransistor,thesizeofitsdepletionlayeralsodecreases.Thedepletionlayerisimportantasitiswhatstopstheflowofelectrons.Researcherspointedoutthatatransistorbelowacertainsizewillnotbeabletostoptheflowofelectronsduetotunneling.Theelectronswillnotperceivethedepletionregionandwilltunnelthroughitasifitdidnotexist,andatransistorthatcannotstoptheflowofelectronsisprettyuseless.Moreover,wearenowslowlyapproachingthesizeofanatomitself,andyoucannotbuildatransistorsmallerthananatom.Thesiliconatomhasacovalentradiusofaround0.1nanometer,andrightnow,wearemanufacturingtransistorswithgatesatabout10timesthatsize.Inafewyears,nottakingquantumeffectsintoaccount,wewillnotbeabletogoanysmaller,consideringthatwearereachingthephysicallimitofhowsmallsomethingcanbe.Whatisthemostproblematicofallisthethermaleffectscausedbythesmall-sizetransistors.Aswegosmaller,transistorstendtogetleakier,meaningthatevenintheir“off”state,theyletsomecurrentpassthrough.Thisiscalledtheleakagecurrent.Ifwetaketheleakagecurrenttobe100nanoamperesandassumeaCPUhas100milliontransistors,thentheleakagecurrentwillbe10amperes.That’senoughtodrainyourphonebatteryinaveryshorttime.Ahighergatevoltagecanreducetheamountofleakagecurrent,butthatcausesmoreheatingeffects,compromisingtheintegrityofthewholechip.Forthepast10years,somecompanieshavebeendeclaringthatMoore’sLawhadalreadyfinished.Thereisapotentialcompetitiveadvantageindisingenuouslypronouncingtheendofthislaw.Forexample,youcangeneratethesmokethatMoore’sLawisdead,andyourcompetitorsmaygiveup.Thenwhenyouradvancecomesouttoeveryone’ssurprise,youcandominatethemarketasyouhaveafirst-moveradvantage.Moore’sLawisstillalive,buteventuallyitwilldie.So,thatwillbetheendofanexponentialgrowtherathatwehavebeenseeingforthepastdecades.Ifthaterahasreacheditspeak…interestingly…whatcomesafter?ButwithMoore’sLawending,therealchallengeistocomeupwithfundamentallynewideasforcomputing.Ifthetransistorsareshrinkingtoatomicsizesandifwewanttocontinue,thenwehavetoleapintothequantumrealm.Quantumcomputershavethepotentialtobethousands,ifnotmillions,oftimesmorepowerfulthancurrenttechnology.Thesecondmajorapproachisneuromorphiccomputing,orchipsbasedonthedesignofthehumanbrain.Thesechipsexcelatpatternrecognitiontasksthatconventionalchipshavetroublewith.AnAmericancompanyisdoingsomethingclosetothis,astheyareimplantingaverysmallcomputerchipintoahumanbrain.So,apersoncancontroltheirsmartphoneandcomputerwiththeirthoughts.That’sjustthebeginning.Yetbothofthesehavetheirdrawbacks.Quantumcomputersneedtobecooleddowntoclosetoabsolutezero,whichlimitstheiruse.Bothrequireprofoundlydifferentlogicthanconventionalcomputers.Thetransitionfromtransistorstothenextlevelwillnotbeseamless,whetherit’snewconfigurationsofmachines,chipsmadeoutofentirelynewmaterials,ornewtypesofsubatomicresearchthatopenupnewwaysofpackingtransistorsontochips.Well,despitethesechallenges,Ipersonallybelievethatthefutureofcomputing,withalltheingenuityitinvolves,willjustbefine.Thanksforwatching!Workingroupsanddiscussthequestions.Thevideoclipmentionsthatthetransitionfromtransistorstothenextlevelwillnotbeseamless.Doyouagreewiththisview?Whyorwhynot?Whatneedstobedonetoachievefurtherbreakthroughsincomputing?Positiveanswer:Yes,Iagreethatthetransitionfromtransistor-basedtechnologytothenextgenerationofcomputingwillnotbeseamless.Fromatechnicalperspective,emergingtechnologiessuchasquantumcomputingandneuromorphiccomputingworkinfundamentallydifferentwaysfromtraditionaltransistor-basedsystems.Theyrequirenewhardwarearchitectures,newprogrammingmodels,and,insomecases,highlyspecializedoperatingconditions.Fromanindustryperspective,theexistingsemiconductorecosystemisalreadybuiltReferenceanswersaroundmaturetransistortechnology,includingestablishedsupplychains,manufacturingfacilities,designtools,andbusinessmodels.Movingtoanewtechnologicalparadigmwouldthereforerequirenotonlyscientificbreakthroughs,butalsomajorchangesacrosstheentireindustry.Negativeanswer:No,Idonotfullyagreewiththeviewthatthetransitionfromtransistorstothenextlevelwillnotbeseamless.Inmyopinion,thetransitioncouldberelativelysmoothbecausenewcomputingtechnologiesareunlikelytoreplacetransistor-basedsystemsallatonce.Instead,theywillprobablybeintegratedintoexistingplatformsstepbystep.Forexample,GPUs,TPUs,andotherAIacceleratorshavealreadybeenaddedtomoderncomputersanddatacenterswhilethebasiccomputingecosystemcontinuestofunctionnormally.Mostusersdonotneedtounderstandthehardwarechangesbehindthescenes;theysimplyexperiencefasterandmorepowerfulservices.Similarly,futuretechnologiesmayfirstworkalongsidetraditionalchipsratherthancompletelyreplacethem.Existingsoftwarelayers,cloudplatforms,andsysteminterfacescanhidemuchofthetechnicalcomplexityfromusersanddevelopers.Becauseofthisgradualintegration,thetransitionmayfeelcontinuousratherthandisruptive.Toachievefurtherbreakthroughsincomputing,progressisneededinseveralkeyareas.First,researchersshouldexplorenewcomputingapproachesbeyondsimplymakingtransistorssmaller.Futureadvancesmaycomefromnewwaysofprocessing,storing,andtransferringinformation,suchasopticalcomputingandin-memorycomputing.Second,materialsandmanufacturingtechnologiesmustcontinuetoimprove.Newcomputinghardwaremayrequirematerialswithbetterelectrical,thermal,oropticalproperties.ReferenceanswersAtthesametime,moreadvancedfabrication,packaging,andchip-integrationmethodswillbeneededtoturnlaboratoryconceptsintoreliableproductsthatcanbeproducedatscale.Third,softwareandhardwareneedtoevolvetogether.Newhardwarealoneisnotenoughifdeveloperscannotuseiteffectively.Thismeansthatnewprogrammingmodels,compilers,operatingsystems,anddevelopmenttoolsarealsonecessary,sothatengineersanduserscanfullytakeadvantageofnewcomputingcapabilities.1Moore’sLawhaspoweredeverythingfromsmartphonestothelargestsupercomputers.
ThetruenatureofMoore’sLaw:Drivinginnovationforthenext50years2Overthepast50years,theelectronicsindustryhastransformedsociety.Peopleandmachineshavebecomemoreproductive;informationisnowavailableinmilliseconds;muchoftheworld’spopulationisnowconnectedtotherestoftheworld;advancedhealthcarehasextendedlifeexpectancies;andmachineshavebecomesmarterand,insomecases,evenautonomous.Advancementsinsemiconductorssitattheheartoftheseachievements.SemiconductorsarethedigitalDNAofsociety.Theyaresoimportantthatgovernmentsaroundtheworldarepromoting,investingin,andprotectingsemiconductorintellectualpropertyandmanufacturing,mostrecentlythroughactionssuchastheEuropeanChipsActandtheCHIPSandScienceAct.3Today’ssemiconductorsgrowoutofaneedtoshrinkelectroniccomponentssothatadvancedelectronicsystemscanfitcost-effectivelyintoincreasinglycompactdesigns.ThisdynamicisthedrivingforcebehindtechnologicaladvancementandislinkedtoaprincipleknownasMoore’sLaw.VariousinterpretationsofMoore’sLawhaveledtodifferentconclusionsintheindustry.SomesaythatMoore’sLawisdead;otherssayitisverymuchalive;andothers,includingmyself,saythatMoore’sLawisevolvingandremainstheheartbeatofinnovation.4BecauseofthemanymisconceptionsregardingMoore’sLaw,thebestplacetobeginistounderstandwhatGordonMoorereallysaid.In1965,GordonMoore,oneofthefoundersofFairchildSemiconductor,publishedanarticleinElectronics,theleadingelectronicsindustrypublicationoftheday.Thearticle’stitlewas“CrammingMoreComponentsontoIntegratedCircuits.”WhilemostofMoore’sarticlefocusedonpredictionsaboutwhatwouldbepossiblewithfutureelectronicsystems,thearticle’scentralthesiswasbasedononlyafewdatapointsstartingwithFairchild’soriginalsilicontransistors.Moore’sobservationwasthattherateofintegrationpersquaremillimeterwouldcontinuetoincreaseexponentiallyonanannualbasis.5Inthisarticle,basedonhisobservation,GordonMooreaccuratelypredictedthenext10yearsofprogressforintegratedcircuitsandtheelectronicsindustry.ItisimportanttorememberthatMoore’sobservationandpredictionwerebasedonthetechnologyavailableatthetime,namely2D,orplanar,integratedcircuitdesigns.Adecadelater,Dr.Moorerevisedthedoublingperiodtotwoyears.Evenbackthen,Moore’sLawwasnotcarvedinstone.6Scientificlawsgenerallydescribenaturalphenomena.Suchobservationsandconclusionsmustbeverifiedthroughscientificmethodsbeforetheyarewidelyaccepted.Ina2015interview,Moorehimselfsaid,“Ijustdidawildextrapolationsayingit’sgoingtocontinuetodoubleeveryyearforthenext10years.”So,callingMoore’sobservationa“law”isabitofastretch,andMooredidn’tmakethatstretchhimself.Anotherelectronicspioneer,aCaltechprofessornamedCarverMead,popularizedtheterm.Evenso,Moore’sobservationwasaveryaccuratepredictionofoneofthekeyinnovationsthathavedriventheadvancementofelectronicstechnologyoverthelasthalfcentury.7Fromthebeginningofsemiconductormanufacturingthroughthe28-nanometerprocessgeneration,theindustryusedtraditional2Dtransistordesigns.However,shrinkingthesedesignsbelow28nanometersledtoanunfortunatesideeffect:higherleakagecurrent.Thisledtothedevelopmentofthe3Dtransistor.The3Dtransistorstandsuprightwiththegatesurroundingthechanneltocarrycurrentonthreesides,givingchipdesignersbettercontrolofthetransistortoimprovecircuitperformanceandreduceleakage.Theindustrynamedthisnewtypeoftransistora“FinFET”(finfield-effecttransistor)becauseofitsfin-likeappearance.8Itisworthnotingthatsemiconductorcoolingtechnologiesarecloselytiedtopackagingandsystem-leveltechnology.Thedevelopmentofadvancedcoolingtechnologieshasallowedforhigher-performanceintegratedcircuits.9
Eventhoughtheuseofnewprocesstechnologies,3Dtransistors,andalternativepackagingwasnotenvisionedbyDr.Mooreinhispaper,theyhavebeencriticaltechnologiesinfurtheringthetrendidentifiedinDr.Moore’s1965articleonincreasingtransistor
count
anddensity.Initsmostbasicinterpretation,Moore’sLawisameasureofdensityachievedataneconomicalcostandwithinoperationallimits.Whileithastraditionallybeenmeasuredbythenumberoftransistorspersquaremillimeter,
thereisnothinginherentinMoore’soriginalobservationthatsaysdensitymustbemeasuredinthatmanner.Inessence,themeasurement,ifthereisone,wouldnowbethenumberoftransistorspercubicmillimeter,buteventhatfigureofmerithasitslimits.10ThetruenatureofMoore’sLaw,ormoreaccuratelyMoore’sobservation,isthatthedensityofcircuitswillcontinuetoincrease.Thisincreasewillresultinincreasedcomputingcapabilitiesthatwilldriveinnovationthroughouttheelectronicsindustryandhelptransformsociety.Evenastheindustryapproachesthesingle-atomphysicalbarrierofcircuitdesign,thereareeffortstodevelopcomputingparadigmsbeyondconventionaltransistor-baseddigitalcircuits–suchasquantumandneuromorphiccomputing–thatwillchangethewayintegratedcircuitsaredesignedandmanufactured.11SomebelievethatMoore’sLawisdead.OthersbelievethatthisisinaccuratebecauseMoore’sLawisnotascientificlaw.Moore’sLawisanobservationandpredictionthathaslastedformorethanhalfacenturyandcontinuestodrivethesemiconductorindustrytopushforwardthepaceofelectronicsinnovationwitheachnewgeneration.12Seenthisway,thereallegacyofMoore’sLawisnotadoublingcurvebutahabitofthinking.Ittaughtengineerstoexpectprogress–andtogetinventivewhenprogresswashard-won.Theoldrulerofprogressisgivingwaytoanewone:nothowsmallthingsare,buthowsmartlytheyworktogether.Moore’sLawhasn’thitawall;ithasfadedintothebackground,becomingthequietpressurethatkeepsthefutureofcomputingmovingforward.Evenbackthen,Moore’sLawwasnotcarvedinstone.[Meaning]:Evenatthattime,Moore’sLawwasnotanunchangeablerule.[Knowledgefocus]:Moore’sLawisoftentracedbacktoGordonMoore’s1965prediction,whichwasbasedonahandfulofdatapointsshowingthenumberofcomponentsperintegratedcircuitfrom1959to1965.ThechartbelowshowsMoore’soriginal1965chart.Inthechart,Moorepresentedasimplelinegraphwithadottedprojectionlineextendingfromthosepoints,representinghispredictionoffuturetrendsintransistorgrowth.Helaterdescribedthisprojectionasa“wildextrapolation,”highlightingitsspeculativenature.Thishistoricalcontexthelpsexplain,inpart,whyMoore’sLawhasbeeninterpretedindifferentwaysovertheyearsandwhyithasfueledawiderangeofmarketperspectives.[Words&Phrases]carvedinstone:(ofadecision,plan,etc.)unabletobechanged(决定、计划等)一成不变的e.g.Theplanisnotcarvedinstone,sowecanmakeadjustmentsaccordingtotheactualsituation.So,callingMoore’sobservationa“law”isabitofastretch,andMooredidn’tmakethatstretchhimself.[Meaning]:Therefore,itissomewhatinappropriateorexaggeratedtorefertoMoore’sobservationasa“law”,andMoorehimselfdidnotdoso.[KnowledgeFocus]:Thephrase“abitofastretch”meansthatcallingMoore’sobservationa“law”maybeanoverstatement.BysayingMoore“didn’tmakethatstretchhimself,”theauthoremphasizesthatMooredidnotpresenthisobservationasafixedscientificlaw,highlightingthegapbetweenMoore’soriginalideaandtheauthorityimpliedbytheword“law.”[Words&Phrases]stretch:anexerciseofsth.beyondordinaryornormallimits牵强e.g.Callingthisdesignsafeisastretchbecausewehavenottesteditunderheavyloads.However,shrinkingthesedesignsbelow28nanometersledtoanunfortunatesideeffect:higherleakagecurrent.[Meaning]:Nevertheless,reducingthesizeofthesedesignstobelow28nanometersresultedinanundesirableconsequence:anincreaseinleakagecurrent.
[Knowledgefocus]:Leakagecurrentisasmallunintendedcurrentthatflowsthroughaninsulator,acrossasurface,orthroughanunwantedpathwhenitshouldnot.Onewaytomeasureitiswithaleakageclampmeter,asshowninthediagrambelow.Inasystemwithnoleakage,themetershouldreadzerobecausetheoutgoingandreturningcurrentscanceleachotherout.Ifsomecurrentleakstoearthorground,thisbalanceisbroken,andthemeterwilldisplayavalue.Thisissueisnotlimitedtolargeelectricalsystems,suchasindustrialequipmentandbuildingwiring;itisalsoimportantinintegratedcircuits.Incomputingdevices,leakagecurrentmainlyaffectspowerefficiencyandheatgeneration.Astransistorsbecomesmaller,controllingunwantedcurrentbecomesmoredifficult,sincechargecarrierscanmoreeasilypassthroughthinbarriersorunintendedpaths.[Words&Phrases]sideeffect:anunexpectedorunplannedresultofasituationorevent意外后果;意想不到的结果e.g.Thesoftwareupdateimprovedspeed,butonesideeffectwaslowersystemstability.Eventhoughtheuseofnewprocesstechnologies,3Dtransistors,andalternativepackagingwasnotenvisionedbyDr.Mooreinhispaper,theyhavebeencriticaltechnologiesinfurtheringthetrendidentifiedinDr.Moore’s1965articleonincreasingtransistorcountanddensity.[Meaning]:AlthoughDr.Mooredidnotpredicttheapplicationofnewprocesstechnologies,3Dtransistors,andalternativepackagingmethodsinhispaper,thesetechnologieshaveplayedacrucialroleinpromotingthetrendheidentifiedinhis1965articleabouttheincreaseinthenumberanddensityoftransistors.[Words&Phrases]alternative:differentfromsth.elseandabletobeusedinsteadofit供替代的;供选择的e.g.Alternativesolutionsarebeingdevelopedtomeettheneedsofsmallerandmorepowerfuldevices.count:ameasurementthatshowshowmuchofasubstanceispresentinaplace,area,etc.thatisbeingexamined数字,计数e.g.Engineersincreasedthesensorcounttoimproveaccuracy,butthecontrolsystembecamemorecomplex.摩尔定律的真正本质:驱动未来50年的创新1摩尔定律为从智能手机到最大型超级计算机的一切设备提供了核心动力。2过去50年间,电子行业彻底改变了人类社会。人类与机器的生产效率大幅提升,信息如今可在毫秒内获得,全球多数人口如今能与世界其他地区相连,先进医疗延长了人类预期寿命,而机器也变得愈发智能,在某些情况下甚至具备了自主行动能力。这些成就的核心正是半导体技术的进步。半导体是社会的“数字基因”。它们如此重要,以至于全球各国政府都在推动半导体知识产权和半导体制造业的发展,对其进行投资并加以保护,近期的典型举措包括《欧洲芯片法案》与美国的《芯片与科学法案》。半导体是社会的“数字基因”。它们如此重要,以至于全球各国政府都在推动半导体知识产权和半导体制造业的发展,对其进行投资并加以保护,近期的典型举措包括《欧洲芯片法案》与美国的《芯片与科学法案》。3当今半导体的发展源于缩小电子元件的需求,以便先进电子系统能以经济高效的方式融入日益紧凑的设计之中。这一趋势是技术进步的动力,并与一项被称为“摩尔定律”的原则相关。对摩尔定律的不同解读在业内衍生出多种结论:有人说摩尔定律已然失效;有人说它依然充满活力;包括我在内的另外一些人则认为,摩尔定律正在演进,并且仍在持续推动创新。4鉴于对摩尔定律存在诸多误解,理解戈登·摩尔究竟说了什么则是最好的切入点。作为仙童半导体创始人之一的戈登·摩尔,于1965年在当时电子行业顶尖刊物《电子学》上发表了一篇文章,题目是《把更多元件塞进集成电路》。尽管摩尔的文章大部分内容聚焦于对未来电子系统可能实现之事的预测,但文章的核心议题只建立在少数几个数据点之上,而这些数据点始于仙童公司最初的硅晶体管。摩尔的观察是:每平方毫米上的集成度将继续以年为周期呈指数增长。5
在这篇文章中,戈登·摩尔基于其观察准确预测了集成电路及电子行业未来十年的发展进程。需要记住的是,摩尔的观察和预测均基于当时可用的技术,即二维,也就是平面式集成电路设计。十年后,摩尔博士将倍增周期修正为两年。即便在当时,摩尔定律也并非一成不变。6
科学定律通常描述自然现象。这样的观察和结论必须通过科学方法验证,然后才会被广泛接受。在2015年的一次访谈中,摩尔本人说:“我只是做了一次大胆的推测,说它(每平方毫米上的集成度)在未来十年会继续每年翻一番。”因此,将摩尔的观察称为“定律”略显牵强,摩尔本人并没有使用这种牵强的说法。另一位电子学先驱、加州理工学院教授卡弗·米德使这一术语广为流传。尽管如此,摩尔的观察确实精准预测了过去半个世纪里推动电子技术进步的一项关键创新。7
从半导体制造业诞生之初到28纳米工艺时代,业界一直采用传统的二维晶体管设计。然而,把这些设计缩小到28纳米以下时,很不幸会产生一个副作用:漏电流增加。这推动了三维晶体管的发展。三维晶体管呈直立结构,栅极从三面环绕用于传导电流的沟道,这样芯片设计者就能更好地控制晶体管,从而提升电路性能并减少漏电。由于这种新型晶体管外形像鳍片,业界将其命名为“鳍式场效应晶体管”。8值得注意的是,半导体冷却技术与封装技术、系统级技术密切相关。先进冷却技术的发展为集成电路实现更高性能提供了可能。9尽管摩尔博士在论文中并未预见新工艺技术、三维晶体管以及替代性封装的应用,但这些技术对推动摩尔博士在1965年的文章中所指出的关于提高晶体管数量和密度的趋势起到了关键作用。从最基本的理解来看,摩尔定律衡量的是在成本可控且符合运行限制的条件下所能实现的密度。虽然传统上它一直以每平方毫米的晶体管数量来衡量,但摩尔最初的观察中并未规定密度必须以这种方式来衡量。本质上,如果现在还要有一个衡量指标,那么它会是每立方毫米的晶体管数量;但即便这一性能指标也存在其局限性。10摩尔定律,或者更准确地说,摩尔观察的真正本质在于:电路密度将持续升高。这种升高将带来更强的计算能力,从而推动整个电子行业的创新,并有助于推动社会变革。即使行业接近电路设计的单原子物理壁垒,人们仍在努力发展超越基于晶体管的传统数字电路的计算范式,如量子计算和神经形态计算,这些范式将改变集成电路的设计与制造方式。11有人认为摩尔定律已然失效。另一些人认为这种说法并不准确,因为摩尔定律并不是一条科学定律。摩尔定律是一种观察和预测,它已经延续了半个多世纪,并会继续推动半导体行业在每一代的更迭中加快电子创新的步伐。12从这个角度看,摩尔定律真正留给我们的并不是一条倍增曲线,而是一种思维习惯。它教会工程师期待进步,也教会他们在进步变得艰难时寻找新的办法。衡量进步的旧标尺正在让位于新的标尺:重要的不再是器件能做得多小,而是它们能以多巧妙的方式协同工作。摩尔定律并没有撞上高墙;它只是退居幕后,化作一股无声的力量,持续推动计算的未来向前发展。1.Readthepassageandcompletetheoutlinewithinformationfromthepassage.OriginandevolutionofMoore’sLawMoore’sLawisrelatedtoaneedtoshrinkelectroniccomponentsinordertointegrateadvanced1)__________________intosmallerdesigns.
ReadingandsynthesizingelectronicsystemAccordingtotheauthor,itisevolvingandstillfuelstheengineofinnovation.Moore’s1965articlesuggeststhatthe2)_________________persquaremillimeterwouldcontinuetogrowexponentiallyyearafteryear.In1975,Moorerevisedhispredictionbyadjustingthe3)___________________totwoyears.Theterm“Moore’sLaw”waspopularizedbyCarverMead.rateofintegrationdoublingperiodTechnologicalinnovationsrelatedtoMoore’sLaw2Dtransistors:Remaininginuseuntilthe4)_______________processappeared3Dtransistors:Givingdesignersmorechipareatoimprovecircuitperformanceandreduce5)_______________Advanced6)____________________:Allowingforhigher-performanceintegratedcircuits28-nanometerleakagecoolingtechnologiesTruenatureandfutureofMoore’sLawMoore’sLawisameasureof7)___________________whilemaintainingeconomicfeasibilityandmeetingoperationalconstraints.Itisnotascientificlawbuta(n)8)_______________________thatcontinuestodrivethesemiconductorindustry.densityobservationandpredictionScanthecodeformoreexercisesonUcampus.ScanthecodeandcompletefourlanguageexercisesonUcampus,includingtechnicalvocabulary,generalVocabulary,sentencestructure,andtranslation.ImprovinglanguageskillsThecontinuedrelevanceofMoore’sLawdependsnotonlyonshrinkingdevicesizebutalsooninnovationsintransistorarchitecture.Oneimportantexamplementionedinthepassageisthefinfield-effecttransistor(FinFET),a3Dtransistordesignthatemergedastraditionalplanartransistorsreachedtheirlimits.CompletethetaskstostrengthenyourunderstandingoftheFinFET.ExaminethediagramanddescribethestructuraldesignoftheFinFET.Analyzetheadvantagesofthisinnovativestructuraldesignanddiscusswhattheysuggestaboutthefutureofsemiconductortechnology.ThediagramshowsthebasicstructureofaFinFET,orfinfield-effecttransistor,whichusesa3Ddesign.Atthecenterisathinverticalfinlabeled“Channel,”risingfromthebaseofthedevice.Surroundingthisfinisthegate,whichextendsoverthetopandalongbothsidesofthechannel.AtthebottomistheSTI,orshallowtrenchisolation.Itisplacedaroundthebaseofthefin.Overall,thestructureisbuiltaroundaverticalchannelcontrolledbythegatefrommultiplesides,whichgivestheFinFETitsdistinctive3Dform.ReferenceanswersTheFinFEThasseveralimportantadvantagesovertraditionalplanartransistors.cThishelpsimproveenergyefficiencyanddeviceperformance.Its3Dstructurealsomakesiteasiertoincreasetransistordensityaschipsizecontinuestoshrink.Theseadvantagessuggestthatthefutureofsemiconductortechnologywilldependnotonlyonsmallerdevices,butalsoonnewtransistordesigns.ReferenceanswersAsphysicallimitsbecomemoreobvious,structuralinnovation,suchasnanosheettransistorsand3Dintegration,islikelytoplayakeyroleinimprovingchipperformanceandsupportingfuturetechnologies.TheBigChip:Anewdesignbeyondtheareawall1AsMoore’sLawcomestoanend,improvingperformancethroughtransistorscalinghasbecomeincreasinglydifficult.Anaturalalternativeistoincreasechipareaandintegratemoretransistors,butthisapproacheventuallyhitstheso-called“areawall.”2Inrecentyears,Chineseresearchershaveproposedanewchiparchitecturecalled“BigChip”toaddressthislimit.TheBigChiphastwomainfeatures.Firstly,theareaoftheBigChipislarge,breakingthearealimitationofthelithographystepper,andamassivenumberoftransistorsareintegratedintoachip,exceedingthenumberoftransistorsintegratedonamonolithicchipundercurrentfabricationtechnologies.Secondly,theBigChipiscomposedofmultiplefunctionaldies,andseveralemergingsemiconductorfabricationtechniquesareusedtointegratethepre-fabricateddiesintotheBigChip.3ToexploretheimplementationtechniquesoftheBigChip,theresearchersdesigneda16-chiplet,256-coreprocessorsystemnamedZhejiangBigChip.Adoptingascalabletile-basedarchitecture,theprocessorhasthe
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