微波射频器件介绍PPT

1、1,第一单元 射频器件简介,理工大学通信工程学院,卫星通信系微波通信教研室,射频微电子学,第 次课,2012.09.01,2,一、放 大 器 二、衰 减 器 三、倍 频 器 四、混 频 器 五、VCO和分频器 六、开 关 FREQUENCY DIVIDERS (PRESCALERS) & PHASE / FREQUENCY DETECTORS FREQUENCY MULTIPLIERS - ACTIVE MODULATORS - BI-PHASE MODULATORS - DIRECT QUADRATURE MODULATORS - VECTOR PHASE SHIFTERS - Analog

2、 POWER DETECTORS VOLTAGE CONTROLLED OSCILLATORS* PHASE LOCKED OSCILLATOR I/Q MIXERS PHASE SHIFTERS,3,HMC619LP5 / 619LP5E GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz P1dB Output Power: +27 dBm Gain: 11 dB Output IP3: +37 dBm Supply Voltage: +12V 300 mA 50 Ohm Matched Input/Output 32 Lead 5x5mm Lead

3、SMT Package: 25mm2,HMC619LP5 / 619LP5E放大器,4,HMC619LP5 / 619LP5E放大器,5,GSM_PHS双模手机射频前端的关键技术研究与性能的优化,PAmodule,收发芯片,HMC619LP5 / 619LP5E放大器,6,HMC462LP5 / 462LP5E放大器,Noise Figure: 2.5 dB 10 GHz Gain: 13 dB P1dB Output Power: +14.5 dBm 10 GHz Self-Biased: +5.0V 66 mA 50 Ohm Matched Input/Output 25 mm2 Lead

4、less SMT Package,The HMC462LP5 & HMC462LP5E are GaAs MMIC PHEMT Low Noise Distributed Amplifi ers in leadless 5 x 5 mm surface mount packages which operate between 2 and 20 GHz. The self-biased amplifi er provides 13 dB of gain, 2.5 to 3.5 dB noise fi gure and +14.5 dBm of output power at 1 dB gain

5、compression while requiring only 66 mA from a single +5V supply. Gain fl atness is excellent from 6 - 18 GHz making the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The wideband amplifi er I/Os are internally matched to 50 Ohms and are internally DC blocked.,7,HMC4

6、62LP5 / 462LP5E放大器,8,HMC462LP5 / 462LP5E放大器,9,HMC273MS10G是宽带5位正电压控制的GaAsIC数字衰减器，覆盖0.73.7GHz，插入损耗为2dB,衰减器的离散值为1，2，4，8，16 dB，总衰减量为31 dB。精确值为0.5 dB，5位控制电压为触发电压为0和35伏，来选择每一个衰减状态，通过5K欧姆外接电阻提供单电压35伏。,HMC273MS10G / 273MS10GE数字衰减器,10,HMC273MS10G / 273MS10GE数字衰减器,11,HMC273MS10G / 273MS10GE数字衰减器,12,HMC307QS16

7、G / 307QS16GE数字衰减器,1 dB LSB Steps to 31 dB Single Control Line Per Bit +/- 0.5 dB Typical Bit Error Miniature QSOP-16 Package: 29.4 mm2,The HMC307QS16G & HMC307QS16GE are broadband 5-bit GaAs IC digital attenuators in 16 lead QSOP grounded base surface mount plastic packages. Covering DC to 4 GHz, t

8、he insertion loss is less then 2 dB typical. The attenuator bit values are 1 (LSB), 2, 4, 8, and 16 dB for a total attenuation of 31 dB. Attenuation accuracy is excellent at 0.5 dB typical with an IIP3 of up to +44 dBm. Five bit control voltage inputs, toggled between 0 and -5V, are used to select e

9、ach attenuation state at less than 50 uA each. A single Vee bias of -5V allows operation down to DC. This product is an excellent alternative to the HMC235QS16G.,13,HMC307QS16G / 307QS16GE数字衰减器,14,PAmodule,收发芯片,HMC307QS16G / 307QS16GE,15,四倍频芯片HMC443LP4/443LP4E,采用的是HITTITE 公司生产的集成四倍频芯片HMC443LP4/443LP

10、4E 利用基于该芯片所构成的倍频模块，可将频率合成器产生的点频2.4GHz信号倍频到9.6GHz，以作为转发器系统中上变频器的本振信号源。,16,集成芯片HMC443是采用InGaP GaAs HBT 技术的宽带倍频器，当输入电压为+5V 时，倍频器能提供4dBm左右的输出功率，并且对温度、输入电压、输入功率的变化等具有比较高的稳定性。与输出信号电平相比，倍频器对信号中出现的基波和不需要的奇次谐波的抑制效果很好，大于25dBc。同时HMC443芯片具有良好的系统相位噪声性能，单边带相位噪声低，约为-142dBc/Hz在100kHz 处。与传统的本振链路的设计制作相比，四倍频器芯片HMC443的

11、使用能有效的减少毫米波本振倍频链路中器件的数量，极大的简化了工程设计与制作。,图4-4 倍频器HMC443外围电路图,四倍频芯片HMC443LP4/443LP4E,17,四倍频芯片HMC443LP4/443LP4E,图4-5 倍频器的PCB版图 图4-6 倍频器模块实物图,18,二倍频器HMC448LC3B,HMC448是GaAs PHEMT技术宽带倍频器，当输入0dBm时，在2022 GHz范围内，倍频器提供11dBm的输出电平，比较低的相位噪声-135 dBc/Hz在100KHz处，帮助系统提供了良好的相位噪声性能，该器件消除了跳金线可以使用表贴技术安装，,19,GaAs MMIC MIX

12、ER w/ INTEGRATED LO AMPLIFIER, 1.2 - 2.5 GHz 采用混频器HMC422MS8是GaAs MMIC双平衡混频器，这种混频器可以用于上下变频器具有集成本振放大器，混频器需要的电平为0dBm，供电电压3V，电流30mA，混频器转换损失为810.5 dB，,HMC422MS8混频器,20,HMC422MS8混频器,21,HMC422MS8混频器,22,压控振荡器HMC513LP5,压控振荡器采用HITTITE公司的HMC513LP5芯片，集成了谐振器、负阻器件、变容二极管、除二和四分频器，其输出功率为7dBm，输出频率10.4311.46GHz相位噪声为-11

13、0dBc/Hz100KHz，输出为5.215.73GHz，输出为2.62.86GHz，调谐电压为213V，电流270mA,由于VCO的输出功率较低，故为保证有足够的功率，在VCO输出加一级放大器。输出频率和调谐电压的关系如图3，调谐灵敏度和调谐电压的关系如图4，不需要外部匹配器匹配, 压控振荡器是无引脚QFN5X5mm表贴器件。HMC513LP5,图3 输出频率和调谐电压的关系,图4 调谐灵敏度和调谐电压的关系,23,压控振荡器HMC513LP5,24,HMC362S8G / 362S8GE4分频器,Ultra Low SSB Phase Noise: -149 dBc/Hz Wide Ban

14、dwidth Output Power: -6 dBm Single DC Supply: +5V S8G SMT Package,The HMC362S8G & HMC362S8GE are low noise Divide-by-4 Static Dividers with InGaP GaAs HBT technology in 8 lead surface mount plastic packages. This device operates from DC (with a square wave input) to 12 GHz input frequency with a sin

15、gle +5.0V DC supply. The low additive SSB phase noise of -149 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance.,25,HMC362S8G / 362S8GE4分频器,26,HMC362S8G / 362S8GE4分频器,27,HMC362S8G / 362S8GE4分频器,28,HMC493LP3 / 493LP3E VCO,Ultra Low SSB Phase Noise: -150 dBc/Hz Very Wide B

16、andwidth Output Power: -4 dBm Single DC Supply: +5V 3x3 mm QFN SMT Package,29,HMC493LP3 / 493LP3E VCO,30,High RF Power Handling: +40 dBm High Third Order Intercept: +70 dBm Single Positive Supply: +3 to +10 Vdc Low Insertion Loss: 0.4 to 0.6 dB Ultra Small MSOP8G Package: 14.8 mm2 Included in the HM

17、C-DK005 Designers Kit,The HMC484MS8G +70 dBmthird order intercept at +5 volt bias. RF1 and RF2are refl ective shorts when “OFF”. On-chip circuitryallows single positive supply operation from +3 Vdcto +10 Vdc at very low DC current with control inputscompatible with CMOS and most TTL logic families.,

18、HMC484MS8G / 484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC - 3.0 GHz,单刀双掷开关,31,收发芯片,HMC484MS8G / 484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC - 3.0 GHz,32,HMC484MS8G / 484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC - 3.0 GHz,33,HMC484MS8G / 484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC - 3.0 GHz,34,HMC345LP3 / 345LP3E单刀丝掷开关,Br

19、oadband Performance: DC - 8.0 GHz High Isolation: 35 dB 6 GHz Low Insertion Loss: 2.2 dB 6 GHz Integrated Positive Supply 2:4 TTL Decoder 3 x 3 mm SMT Package,The HMC345LP3 & HMC345LP3E are broadbandnon-refl ective GaAs MESFET SP4T switches in lowcost leadless surface mount packages. Covering DCto 8

20、 GHz, this switch offers high isolation and lowinsertion loss. This switch also includes an on boardbinary decoder circuit which reduces the requiredlogic control lines to two. The switch operates using apositive control voltage of 0/+5V, and requires a fi xedbias of +5V.,GaAs MMIC SP4T NON-REFLECTI

21、VE POSITIVE CONTROL SWITCH, DC* - 8.0 GHz,35,HMC345LP3 / 345LP3E单刀丝掷开关,36,HMC345LP3 / 345LP3E单刀丝掷开关,37,HMC597LP4 / 597LP4E,SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz,High Linearity: +25 dBm IIP3 & +60 dBm IIP2 Low Noise Figure: 15 dB High Integration: On-Chip RF Balun,38,HMC597LP4 / 597LP

22、4E,39,HMC597LP4 / 597LP4E,40,HMC597LP4 / 597LP4E,41,HMC538LP4 / 538LP4E移相器,Available as Lead Free Wide Bandwidth: 6 - 15 GHz 600 Phase Shift Single Positive Voltage Control QFN Leadless SMT Package, 16 mm2,42,HMC538LP4 / 538LP4E移相器,43,收发芯片,HMC538LP4 / 538LP4E移相器,44,HMC600LP4 / 600LP4E,Wide Dynamic R

23、ange: up to 75 dB Flexible Supply Voltage: +2.7V to +5.5V Power-Down Mode Excellent Stability over Temperature Compact 4x4mm Leadless SMT Package,75 dB LOGARITHMIC DETECTOR / CONTROLLER 50 - 4000 MHz,45,HMC600LP4 / 600LP4E,46,HMC600LP4 / 600LP4E,47,AD8367 500 MHz, Linear-in-dB VGA with AGC DetectorA

24、GC放大器,Broad Range Analog Variable Gain2.5 dB to +42.5 dB 3 dB Cutoff Frequency of 500 MHz Gain Up and Gain Down Modes Linear-in-dB, Scaled 20 mV/dB Resistive Ground Referenced Input Nominal ZIN 200 On-Chip Square-Law Detector Single-Supply Operation: 2.7 V to 5.5 V APPLICATIONS Cellular Base Station

25、 Broadband Access Power Amplifier Control Loops Complete, Linear IF AGC Amplifiers High-Speed Data I/O,48,AD8367 500 MHz, Linear-in-dB VGA with AGC DetectorAGC放大器,49,AD8367 500 MHz, Linear-in-dB VGA with AGC DetectorAGC放大器,50,Basic Connections for Voltage-Controlled Gain Mode,Figure 8. Basic Connect

26、ions for AGC Operation,AD8367 500 MHz, Linear-in-dB VGA with AGC DetectorAGC放大器,51,Example of Using an External Detector to Form an AGC Loop,AD8367 500 MHz, Linear-in-dB VGA with AGC DetectorAGC放大器,52,AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator,1 degree rms quadrature error 1.9 GHz 0.2 dB I/Q amp

27、litude balance 1.9 GHz Broad frequency range: 0.8 GHz to 2.5 GHz Sideband suppression: 46 dBc 0.8 GHz Sideband suppression: 36 dBc 1.9 GHz Modulation bandwidth: dc to 70 MHz 0 dBm output compression level 0.8 GHz Noise floor: 147 dBm/Hz Single 2.7 V to 5.5 V supply Quiescent operating current: 45 mA

28、,53,The AD8346 is a silicon RFIC I/Q modulator for use from 0.8 GHz to 2.5 GHz. Its excellent phase accuracy and amplitude balance allow high performance direct modulation to RF. The differential LO input is applied to a polyphase network phase splitter that provides accurate phase quadrature from 0

29、.8 GHz to 2.5 GHz. Buffer amplifiers are inserted between two sections of the phase splitter to improve the signal-to- noise ratio. The I and Q outputs of the phase splitter drive the LO inputs of two Gilbert-cell mixers. Two differential V-to-I converters connected to the baseband inputs provide th

30、e baseband modulation signals for the mixers. The outputs of the two mixers are summed together at an amplifier which is designed to drive a 50 load. This quadrature modulator can be used as the transmit mod-ulator in digital systems such as PCS, DCS, GSM, CDMA, and ISM transceivers. The baseband qu

31、adrature inputs are directly modulated by the LO signal to produce various QPSK and QAM formats at the RF output. Additionally, this quadrature modulator can be used with direct digital synthesizers in hybrid phase-locked loops to generate signals over a wide frequency range with millihertz resoluti

32、on. The AD8346 comes in a 16-lead TSSOP package, measuring 6.5 mm 5.1 mm 1.1 mm.,AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator,54,AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator,55,Single Sideband (SSB) Output Power (POUT) vs. LO Frequency (FLO). I and Q inputs driven in quadrature at baseband frequency (FBB) = 100 kHz with differential amplitude of 2.00 V p-p.,AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator,56,PLL Frequency Synthesizer ADF4106,芯片选择集成锁相环芯片ADF4106是美