DRAM内存颗粒测试简介.pptx

1、Introduction to DRAM Testing,- DRAM inside team - 2015.May,Agenda,Basis of Testing Typical DRAM Testing Flow Burn-in DC Test (Open/Short, Leakage, IDD) Functional Test (r0,w1);(r1,w0);(r0,w1);(r1,w0); (r0) Operation Count: 10*n Scan type: X-Scan (X inc - Y inc), Y-Scan(Y inc - X inc) Fault Coverage:

2、 Most of Failure Mode,DRAM Test Pattern (X-scan),Y,X,00,01,10,11,00,01,10,11,DRAM Test March Pattern,DRAM Test Failure Mode,Stuck-at Fault (SAF),Coupling Fault (CF),Shorts between data lines Crosstalk between data lines,Transistion Fault (TF),Cell can be set to 0 and not to 1 (or vice versa) when it

3、s operated,Addressing Fault (AF),Address line stuck Open in address line Shorts between address lines Wrong access,Cell stuck Driver stuck Data line stuck,Neighbor Pattern Sensitive Fault (NPSF),Pattern sensitive interaction between cells,Data Retention Fault (DRF),Data can not kept same status in c

4、ell as time pass,DRAM Test March Pattern,March C- is the most effective,DRAM Test 1HT,: SUSPECTION FOR FAIL,Above table comes from our experiences. It is not covered all of failure modes vs phenomena. So, it is only for your reference.,DRAM Test Functional Test,Other Functional Test Check Core Funct

5、ion (80% of total test time) Data Retention, ODT, Burst Read/Write, etc Detect Pattern Sensitive Fault (PSF),DRAM Test AC Test,AC Parameter Test To verify IC can work as each timing parameter defined in datasheet Rise and fall time Setup and hold time Delay test Others,DRAM Test Speed Test,Test DRAM at different speed: 1. DDR3-1600(11-11-11) Test 2. DDR3-1333(9-9-9) Test 3. DDR3-1066(7-7-7) Test Test for each timing (tR