Michaelquirk半导体制造技术附录图解读.ppt

1、,Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2001 by Prentice HallAppendix AChemicals and Safety,Definitions of Safety Terms,Hazardous:Any chemical or substance that has adverse effects on the health or safety of people. Toxic: Any chemical or substance that seriously

2、damages biological tissue. Examples are phosphine and arsine. Flammable:Any liquid or gas that is capable of igniting into fire. Pyrophoric:Any material that ignites spontaneously in air below 55C (130F). An example is silane.,Examples of Hazards in Semiconductor Manufacturing,Process chemicals High

3、ly flammable gases Pyrophoric gases Corrosive gases Toxic or caustic liquids High voltages,Solvents Mechanical hazards High temperatures Radiation UV Laser X-ray Freezing temperatures,Hazard Warning Sign,Figure A.1,Definitions of Exposure Limits(Refer to p. 602 for details),TLV-TWA: Threshold limit

4、values time weighted average. TLV-STEL: Threshold limit values short term exposure limit. IDLH: Immediately dangerous to life and health. PEL: Permissible exposure limit.,How Chemicals Enter the Body,1.Contact with skin or eyes. Wear safety glasses and no contact lens. Use goggles to protect normal

5、eyewear. Wear the appropriate glove type for the job. Chemicals absorbed through the pores of the skin can enter the body and cause damage to vital organs. Use full face shield when pouring or mixing chemicals.,How Chemicals Enter the Body,2.Ingestion (swallowing). Certain toxic chemicals can be fat

6、al when even a minute amount in ingested. Never bring food or drink into areas where chemicals are being used. It is good practice to wash hands with soap and water when leaving the workplace.,How Chemicals Enter the Body,3.Inhalation. Breathing toxic gases may result in burns or damage to lung tiss

7、ue and can pass into the bloodstream, damaging other organs. The workplace must be well-ventilated. If unusual odors are detected, notify someone in charge and leave the area. Sound an alarm if appropriate.,Common Information in MSDS,Chemical name Date prepared PEL & TLV Health effects,Physical/Chem

8、ical characteristics Fire/Explosion data Reactivity hazard data Health hazard dta,Common Terms Used in an MSDS,Table A.1,Common Terms Used in an MSDS,Table A.1 (continued),Wet Chemical Safety,When working with corrosives: Clearly identify all chemicals before use (e.g., HF looks like H2O). Do not mi

9、x incompatible chemicals (see Table A1.3). Wear eye protection and a face shield at all times. Wear body and arm protection, including acid-resistant apron and sleeve guards. Wear gloves and boots suitable for the type of chemical. Do not breathe vapors. Use only under a fume hood. Store and use HF

10、only in plastic containers HF attacks glass.,Incompatible Chemicals,Table A.2,Precautions When Working With Solvents,Wear eye protection (face masks), appropriate gloves and protective clothing. Avoid breathing vapors. Use only under a hood or in a well-ventilated area. Keep solvents away from heat,

11、 sparks and open flame. Know the fire extinguisher location. Do not pour solvents into acid sinks or drains. Pour solvents into waste solvent containers. Keep solvents in a flammable materials storage cabinet. Do not mix acid waste with solvent waste - could produce dangerous exothermic reaction.,Sp

12、ecial Precautions with Chemicals(Refer to p. 606 for details),Hydrofluoric Acid (HF) Sulfuric Acid (H2SO4) Chemical Hazards,Gas Detection and Monitoring,Some recommended safety procedures: Conduct formal safety reviews and inspections Implement regular gas safety training programs Limit the number o

13、f cylinders stored on-site through just in time deliver,Gas Detection and Monitoring(continued),Important gas system design features: Select components and materials suitable for reactive gases Double containment for gas lines, where appropriate Good ventilation around piping Leak testing prior to u

14、se Appropriate use of check valves and flow limiting orifices Automatic shutoff valves Pressure and vacuum-cycle purge on process stations Backup power for fire protection and exhaust systems Gas detection and alarm system appropriately placed, as defined in the Uniform Fire Code and local ordinance

15、s Steel gas cabinets with locks and external emergency shutoff valves,Commonly Used Fab Chemicals and Their Safety HazardsNote: Process applications are listed here only for reference and are described in the appropriate chapters.,Table A.3,A: annealingE/C: etch/clean CVD: chemical vapor depositionI

16、: ion implant CG: crystal growthP/B: purge/blanket Di: diffusionS: sputtering Do: dopingTO: thermal oxidation TLV-TWA: Threshold limit values time weighted average. Nearly all workers could be repeatedly exposed, day after day, without an adverse affect. TLV-STEL: Threshold limit values short term e

17、xposure limit. Exposures at the STEL should not be longer than 15 minutes, and should not be repeated more than 4 times per day. IDLH: Immediately dangerous to life and health.,Commonly Used Fab Chemicals and Their Safety Hazards,Table A.3 (continued),Commonly Used Fab Chemicals and Their Safety Haz

18、ards,Table A.3 (continued),Other Safety Hazards(Refer to p. 608-609 for details.),Photo Light Source Safety Ion Implantation Safety Chemical Recycling,Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix BContamination Controls in Cleanrooms,Evolut

19、ion of Chip Feature Sizes and Contamination Control,Table B.1,Human Contamination,Saliva and Lung Particles talking sneezing Contents of Saliva Dissolved minerals Salts Elements (Na, Ca, Fe, Mg, Cl, Al, S, K, P) Other Body Contaminants,Evolution of Federal Standard 209 Specifications for Cleanliness

20、 of Air,Table B.2,Metric Definitions of Airborne Particulate Cleanliness Classes Per Federal Standard 209E,Table B.3,Cleanroom Glove Characteristics,Table B.4,Specification for DI Water,Two primary specifications for electronic grade DI water: American Society for Testing and Materials (ASTM) ASTM D

21、-19 Standard Guide for Electronic Grade Wafer D512-90 (1990) Semiconductor Equipment and Materials International SEMI Suggested Guidelines for Pure Water for Semiconductor Processing (1989),Charge Generation Capability of Common Materials,Figure B.1,Electrostatic Voltages at Different Relative Humid

22、ity Levels,Table B.5,Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix CUnits,The International System of Units (SI),Table C.1,SI Prefixes,Table C.2,Unit Conversions,A meter is the basis for metric units of measure. 1 = 10-10 m 1 nm = 10-9 m 1 m

23、m = 10-6 m 1 mm = 10-3 m 1 cm = 10-2 m,Metric Equivalents to the Angstrom,The angstrom is a common thickness unit of measure. 1 = 10-1 nm 1 = 10-4 mm 1 = 10-8 cm 1 = 10-10 m,Conversion Between Common and SI Units,Table C.3,Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 20

24、00 by Prentice HallAppendix DColor as a Function of Oxide Thickness,Color Chart for Thermally Grown Oxide Films,Table D.1,Color Chart for Thermally Grown Oxide Films,Table D.1 (continued),Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix EOvervi

25、ew of Photoresist Chemistry,Diagram and Symbol of Simple Benzene Aromatic Ring,Figure E.1,Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 183.,Aromatic Compounds,Figure E.2,Redrawn from S. Campbell, The Science and En

26、gineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 183.,Polyethylene Polymer and Cross Linking,Figure E.3,Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 184.,Common Photoactive Com

27、pound of Diazonaphthoquinone (DNQ),Figure E.4A,Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.,Common Photoactive Compound of Diazonaphthoquinone (DNQ),Figure E.4B,Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996),