韩国商务精品ppt模板.pptx

更多ppt模板免费下载，尽在 appendix 更多ppt模板免费下载，尽在 1. 2. 3. 4. 5. chapter 1 更多ppt模板免费下载，尽在 4 1-1 () 99000102.3q 23,51529,56516,00814,802 3,0173,5912,0921,878 (%)12.8312.1413.0712.69 1993 5 24 30 diffusion furnace () lp-cvd () 77 ( 23) ( 36.5%) 1. 2. a/s 3. 4. ( ) ( ) / sas hea ( 02.3q , ) 更多ppt模板免费下载，尽在 5 1-2 93 93. 5. 24 furnace cvd 93 92 dram 1 93 memory 1 95% 更多ppt模板免费下载，尽在 6 (oxidation) (exposure) (development) (etching) (cvd) (pr) wafer source gas wafer 1-3 wafer wafer (fabrication) (packaging) (test) 更多ppt模板免费下载，尽在 7 1-4 ald(atomic layer deposition) - al2o3/ hfo2 - nitride (si3n4) - oxide(sio2) batch type mmt(modified magnetron type) - stack gate (nitridation, oxidation) single type furnace & cvd 200mm/ 300mm wafer furnace/ cvd tat(turn around time) wafer 1 single type rtp(rapid thermal process) ruthenium, high-k ta2o5 batch 50150 wafer batch type oxide, nitride, anneal, d-poly hto(high temperature oxide) alloy, bpsg reflow 8 1-5 a/s, total service 200mm/300mm diffusion furnace & lp-cvd, lp-oxidation, ald : 63 % , : 9 % : 15 % set-up a/s : 13 % (2002 3 ) chapter 2 1. 2. 3. 10 (:wsts 2002.5, data quest 2002.7) (b$) 204 149 35 62 2-1 furnace & cvd 0102 03 - 2003 1220%, 916% - dram , , , pc , 2003 furnace & cvd - 70% - furnace & cvd 20% (: data book 2001) (m$) 5,243 2,675 397 755 11 2-2 () () (:03.01 ) 03 it, pc, 22% ($1,422$1,731, $309) 03 . - 300 wafer line - system lsi line - 03 5 3.6 4 3 , lcd , , utility 03 12.4% (2001 ) - 6.8% , 36.1% , 11.0% 1,324 163 12.3 1,261 90 7.1 2,173 219 10.1 1,097 170 15.5 781 81 10.4 ( %) 02(f)01009998 ( : ) (%) (: 2002) (m$) 2,938 1,350 1,933 4,029 2,045 2,217 12.4% 17.8% 0 5 10 15 20 25 12 2-3 (, ) 300mm furnace & cvd 35% 17% 9% t 39% 200mm furnace & cvd 49% 11% 3%t 37% chapter 3 1. trend 2. 3. 4.r&d 5. 6. 14 3-1 trend ( maker ) (device maker) ( maker) (device maker) (:+) r&d device maker device maker ( jdp : joint development project ) 15 3-2 furnace & cvd 2002200320042005 design rule ()1309065 () device gas plasma s/w conventional diffusion furnace & lp-cvd ald (atomic layer deposition) mmt(modified magnetron typed plasma source) pl-cvd ( poly layer cvd ) rtp (rapid thermal process) ( : , : ) 16 3-3 200mm lp-oxidation 1, 3 200mm mo-cvd(ru) 1 300mm furnace & cvd 8 200mm batch type ald(si3n4) 1, 1 200mm/300mm bpsg () flow high speed temp. ramp up/down anneal 200mm 5, 300mm 7 200mm/300mm batch type ald (al2o3,hfo2) capacitor 200 : 2003.06 300 : 2003.12 300mm mini batch (si3n4) quick cycle time 2003.06 300mm icc+vacuum load lock d-poly poly contact 2003.12 200mm/300mm batch pn (plasma nitridation) high throughput batch type 200 : 2003.06 300 : 2004.06 300mm batch type ald(si3n4) 2003. mmt (modified magnetron typed plasma source) low-temp. plasma 2004. kaist nano fab nano technology process 2005. 10 device maker 17 r&d 2000-0019002 2000-0010461 2001-0070914 2001-0035106 2001-0070682 2001-0035105 unit partner gas / unit 60% quartz , , heater e arm / transfer arm/ transfer robot arm/ boat changer unithanbon flange/ shutter damper duct r&d 3-4 2000 r&d 23 ( 77 30% ) - 15 5 r&d 15 ( 6%) , unit ( , ) (%) () 5.0 9.3 12.5 15.0 18 3-5 , , 2001 - 1,700 - : - : 1 2,500 - : 1 3% - : 800 : - : 19 3-6 , , , a/s . 3 (oem) . . 1 : 2 : a/s 3 : unit, oem 5 wafer 4 6 wafer 8 12 wafer - 200 - 1520 80 1991 1996 1997 2001 2002 2006 72992727 8010103030(8) asmctsmchejiansmic 03 (m$) 311010641line 34568w/f size fab :ccid( ) chapter 4 1. 2. 3. 21 4-1 - 02 240 50% - 01 13.07% ( 6.4%) - 0% - 02.3q (02 ) 24,000 (:) 23,515 29,565 16,008 14,802 (:%) (:%) () 22 4-2 20012002() per(a)()13.9427.01 (b)()2,092,0951,074,178 (c)()6,000,0006,000,000 eps(b/c)()349179 (aeps)4,8654,835 (d+e)/2)()4,850 20012002() ev/ebitda(a)11.7820.51 ebidta(b)2,597,7731,238,616 ev(ab)30,601,76625,404,014 (c)-4,656,597-8,935,346 (ev-c)35,258,36334,339,360 6,000,0006,000,000 (ev-c)/5,8765,723 (d+e)/2)5,800 per ev/ebitda band 4,8505,8005,32536.96%3,3573,1003,700 per ev/ebitda ( ) 23 4-3 tel 1999 2001 12% ( 9 ) furnace & cvd 60% m/s device maker ( 10 ) , a/s ? zero appendix chapter 5 1. 2. 3. 25 5-1 2003 3 5 2003 2 21 2003 3 21 2003 2 5 2003 3 12 13 4,286 6,851 365 () 2,200 ( ) 2,355,776 (28.7%) 2,210,000 (26.9%) 254,224 (3.1%) ( : 8,210,000) 2,190,000 (26.7%) 1,200,000 (14.6%) 5,596,776(68.2%) 2,190,000(26.7%) (*2) (*1) 830,000(10.1%) 221,000( 2.7%) (*3) 2,355,776(28.7%) () (*1) : 1,200,000( 830,000) (*2) : (*3) : 274,174(1 : 221,000) 2,613,224(31.8%) 26 5-2 4-2 77 160.1/ 20.9(2001)/ di