芯片制造流程课件.ppt

ChipManufacturingOverview芯片制作概述,晶柱SiliconIngot,晶圆Wafer,光罩制作/光刻,离子植入,切割、封装,电镀,(Die,晶粒),(Chip,晶芯),蚀刻,MaskMaking/Photolithography,IonImplantation,Assembly&Testing,Electroplating,Etching,沉积,Deposition,Tomakewafers,polycrystallinesiliconismelted.Themeltedsiliconisusedtogrowsiliconcrystals(oringots)thatareslicedintowafers.首先融化多晶硅，生成晶柱，然后切割成晶圆。,RawMaterialforWafers晶圆制作所需原料,Toremovethetiniestscratchesandimpurities,onesideofeachwaferispolishedtoamirror-likesurface.Chipsarebuiltonthissurface.切下的晶圆要经过清洁、磨光等步骤以去除杂质，使平面光滑。,RawMaterialforWafers(Contd)晶圆制作所需原料(接上页),Alayerofsilicondioxide(SiO2)glassisgrownonthewaferbyexposingthewafertooxygenatveryhightemperatures.Aprocesscalledchemicalvapordeposition(CVD)isthenusedtocoatsilicondioxideontothewafersurface.Becauseitwillnotconductelectricity,thislayeriscalled“dielectric”.Later,channelswillbeetchedorotherwiseformedinthedielectricforconductingmaterials.SiO2mayalsobegrownordepositedduringlaterstepsintheprocessaslayersofthecircuitarebuiltontothechips:制作晶片的第一步是在晶圆上沉积一层不导电的二氧化硅。在晶片的后续制作过程中，二氧化硅层的成长、沉积会进行很多次。在高温下使晶圆曝氧可以使二氧化硅层成长。然后使用化学气相沉积方法使二氧化硅层沉积在晶圆表面。,ChipManufacturingProcessDeposition芯片制作过程沉积,SMIC,Whatismicrolithography?,Microlithography:transferthepatternofcircuitryfromamasktoawafer.,Photolithography,orlithographyforshort,isusedtocreatemultiplelayersofcircuitpatternsonachip.First,thewaferiscoatedwithalight-sensitivechemicalcalledphotoresist.Thenlightisshonethroughapatternedplatecalledamaskorreticletoexposetheresistmuchthesamewayfilmisexposedtolighttoformaphotographicimage.下面使用光刻制程在芯片建立多层电路图案。首先，晶圆表面上覆盖上一层感光性强的化学制品光刻胶。象光透过电影底片形成图象一样，光透过光掩膜在晶圆上形成图案。,ChipManufacturingProcessPhotolithography芯片制作过程光刻,SMIC,Thewafersexposuretolightinlithographycausesportionsoftheresistto“harden”(orbecomeresistanttocertainchemicals).The“non-hardened”resistiswashedaway.Thenthematerialbelowit,forexampleSiO2,isetchedaway.Finally,the“hardened”resistisstrippedoffsothatthematerialunderneathformsathree-dimensionalpatternonthewafer.ThefirstlithographyandetchprocesswillresultinapatternofSiO2.光刻制程后，感光部分的光刻胶具有强的抗腐蚀性，抗腐蚀性弱的光刻胶在接下来的制程里被洗去。接着光刻胶下面的部分被蚀刻制程除去。最后，抗腐蚀性强的光刻胶也被剥离。光刻与蚀刻制程在晶圆表面形成3D的图案。,ChipManufacturingProcessEtching芯片制作过程蚀刻,SMIC,Throughseverallithographyandetchsteps,subsequentlayersofvariouspatternedmaterialsarebuiltuponthewafertoformmultiplelayersofcircuitpatternsonasinglechip.经过几次光刻与蚀刻步骤，在晶圆表面叠加成多层不同图案,ChipManufacturingProcessFormingMultipleLayers芯片制作过程生成多层,SMIC,2019/12/15,10,可编辑,Tocontroltheflowofelectricitythroughachip,certainareasofthewaferareexposedtochemicalsthatchangeitsabilitytoconductelectricity.Atomsfromthechemicals,calleddopingmaterials,canbe“diffused,”orforced,intoareasofthesiliconwaferthroughchemicalexposureandheating.为了能在晶片上控制电流，加热晶圆，使晶圆部分区域接触添加剂。添加剂里的原子能够替换晶圆里的部分硅原子来改变其导电性。,ChipManufacturingProcessIonImplantation芯片制作过程离子植入,SMIC,Theportionsofachipthatconductelectricityformthechipsinterconnections.Aconductingmetal(usuallyaformofaluminum)isdepositedontheentirewafersurface.Unwantedmetalremovedduringlithographyandetchingleavesmicroscopicallythinlinesofmetalinterconnects.Allthemillionsofindividualconductivepathwaysmustbeconnectedinorderforthechiptofunction.ThisincludesverticalinterconnectionsbetweenthelayersaswellashorizontalInterconnectionsacrosseachlayerofthechip.进行电连接。导电金属（通常是铝）在晶圆表面沉积。使用光刻和蚀刻制程去除没有用的金属。现在复杂的晶片都需要很多层绝缘体。一个正常运作的晶片需要连接数以百万计的传导线路，包括层上水平连接和各层之间的垂直连接。,ChipManufacturingProcessElectroplating芯片制作过程电路连接,SMIC,SMIC0.13uCuBEOLFlow,SMICiscurrentlyrunning1P6M,1P8Mprocess,Eachchiponacompletedwaferistestedforelectricalperformance.Anychipsthatfailaremarkedsotheycanbediscardedwhensawedintoindividualdies.Thechipsareputintoindividualpackageswhichwillprotectthechipsandprovideconnectionsfromthechipstotheproductsforwhichtheyaredesigned.Forexample,chipsdestinedforcomputersareplacedInpackagingthatcanbepluggedintocomputercircuitboards.Oncepackaged,chipsaretestedagaintomakesuretheyfunctionproperlybeforebeingshippedtodistributorsorplacedinelectronicproducts.晶圆上的每一个晶粒都需要进行测试。有缺陷的晶粒被标记起来，在进行晶圆切割时这些晶粒被剔除。每个晶粒都按要实现功能的不同进行单独封装。比如要应用在电脑上的晶粒被封装后能够插入电脑集成电路板。封装好后，在进行最终使用前，晶粒将进行再一次测试以确保功能正常。,ChipManufacturingProcessAssembly&Testing芯片制作过程切割、封装,SMIC,PackageTypesandApplications(1),ConventionalLeadframeType(PDIP,SOP,TSOP,QFP),AdvancedSubstrateType(BGA),Moldingcompound,Leadframe,Goldwire,Die,Epoxy(Silverpaste),Dieattachpad,Moldingcompound,Epoxy(Silverpaste),Die,Goldwire,Solderball,BTresin,Throughhole,Die,Goldwire,LOCtape,LeadframewithDown-set,LOC(Lead-on-chip),IntroductionoftheSemiconductorPackagesandAssembly,晶柱SiliconIngot,晶圆Wafer,离子植入,切割、封装,电镀,(Die,