仙童MJ系列三极管【强烈推荐，非常经典】

Index of /ds/MJ/ Name Last modified Size Description Parent Directory MJD117.pdf 22-Dec-99 00:12 304K MJD122.pdf 22-Dec-99 00:12 287K MJD200.pdf 22-Dec-99 00:12 306K MJD2955.pdf 22-Dec-99 00:12 244K MJD3055.pdf 22-Dec-99 00:12 236K MJD31.pdf 22-Dec-99 00:12 326K MJD31C.pdf 22-Dec-99 00:12 326K MJD32.pdf 22-Dec-99 00:12 85K MJD32C.pdf 22-Dec-99 00:12 85K MJD340.pdf 22-Dec-99 00:12 186K MJD350.pdf 22-Dec-99 00:12 185K MJD41C.pdf 22-Dec-99 00:12 83K MJD42.pdf 22-Dec-99 00:12 306K MJD42C.pdf 22-Dec-99 00:12 306K MJD44H11.pdf 22-Dec-99 00:12 54K MJD45H11.pdf 22-Dec-99 00:12 61K MJD47.pdf 22-Dec-99 00:12 243K MJD47_50.pdf 22-Dec-99 00:12 243K MJD50.pdf 22-Dec-99 00:12 243K MJE170.pdf 22-Dec-99 00:12 228K MJE171.pdf 22-Dec-99 00:12 228K MJE172.pdf 22-Dec-99 00:12 228K MJE180.pdf 22-Dec-99 00:12 66K MJE181.pdf 22-Dec-99 00:12 66K MJE182.pdf 22-Dec-99 00:12 66K MJE200.pdf 22-Dec-99 00:12 62K MJE210.pdf 22-Dec-99 00:12 62K MJE2955T.pdf 22-Dec-99 00:12 57K MJE3055T.pdf 22-Dec-99 00:12 53K MJE340.pdf 22-Dec-99 00:12 53K MJE350.pdf 22-Dec-99 00:12 56K MJE700.pdf 22-Dec-99 00:12 79K MJE701.pdf 22-Dec-99 00:12 79K MJE702.pdf 22-Dec-99 00:12 79K MJE703.pdf 22-Dec-99 00:12 79K MJE800.pdf 22-Dec-99 00:12 73K MJE801.pdf 22-Dec-99 00:12 73K MJE803.pdf 22-Dec-99 00:12 73K MJD117 PNP SILICON DARLINGTON TRANSISTORDPAK FOR SURFACE MOUNTAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP117ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C I B P C P C T J T STG- 100- 100 - 5 - 2 - 4 - 50 201.75150-65 150VVVAAmAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product Output Capacitance V CEO (sus) I CEO I CBO I EBO h FE V CE (sat) V BE (sat) V BE (on) f T C OB I C = - 30mA, I B = 0 V CE = - 50V, I B = 0 V CB = - 100V, I E = 0 V EB = - 5V, I C = 0 V CE = - 3V, V = - 0.5A I C V CE = - 3V, V = - 2A I C V CE = - 3V, I C = - 4A I C = -2A, I B = - 8mA I C = - 4A, I B = - 40mA I C = - 4A, I B = - 40mA V CE = - 3V, I C = - 2A V CE = -10V, I C = - 0.75A f = 1MHz V CB = - 10V, I E = 0 f= 0.1MHz- 100 5001000 200 25 - 20 - 20 - 212 000 - 2 - 3 - 4- 2.8 200VAAmAVVVVMHzpFD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD117 PNP SILICON DARLINGTON TRANSISTORMJD117 PNP SILICON DARLINGTON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD122 NPN SILICON DARLINGTON TRANSISTORDPAK FOR SURFACE MOUNTAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP122ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300uS, Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C I B P C P C T J T STG100100 5 8 16 120 201.75150-65 150VVVAAmAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter Saturation Voltage* Base Emitter On Voltage Output Capacitance V CEO (sus) I CEO I CBO I EBO h FE V CE (sat) V BE (sat) V BE (on) C OB I C = 30mA, I B = 0 V CE = 50V, I B =0 V CB = 100V, I E = 0 V EB = 5V, I C = 0 V CE = 4V, I C = 4A V CE = 4V, V = 8A I C I C = 4A, I B = 16mA I C = 8A, I B = 80mA I C = 8A, I B = 80mA V CE = 4V, I C = 4A V CB = 10V, I E = 0 f= 0.1MHz1001000 1001010 212 000 2 44.52.8200VAAmAVVVVpFD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD122 NPN SILICON DARLINGTON TRANSISTORMJD122 NPN SILICON DARLINGTON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD200 NPN EPITAXIAL SILICON TRANSISTORDPAK FOR SURFACE MOUNTAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, “ - I “ Suffix)ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Dissipation (T A = 25C) Collector Dissipation (T C = 25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I B I C I C P C P C T J T STG 40 25 8 1 5 10 1.412.5 150-6 5 150VVVAAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product Output Capacitance V CEO (sus) I CBO I EBO h FE V CE (sat) V BE (sat) V BE (on) f T C OB I C = 10mA, I B = 0 V CB = 40V, I E =0 V EBO = 8V, I C = 0 V CE = 1V, I C = 500mA V CE = 1V, I C = 2A V CE = 2V, I C = 5A I C = 500mA, I B =50mA I C = 2A, I B = 200mA I C = 5A, I B = 1A I C = 5A, I B = 1A V CE = 1V, I C = 2A V CE = 10V, I C = 100mA, f = 10MHz V CB = 10V, I E = 0, f = 0.1MHz2570451065 100 100 1800.30.75 1.8 2.5 1.6 80VnAnAVVVVVMHzpFD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD200 NPN EPITAXIAL SILICON TRANSISTORMJD200 NPN EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD2955 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERLOW SPEED SWITCHING APPLICATONSDPAK FOR SURFACE MOUNTAPPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE 2955 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: f T = 2MHz (MIN), I C = -500mAABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Dissipation ( T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I B P C P C T J T STG - 70 - 60 - 5 - 10 - 6 201.75 150-55 150VVVAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product V CEO (sus) I CEO I CBO I EBO h FE V CE (sat) V BE (on) f T I C = - 30mA, I B = 0 V CE = - 30V, I E = 0 V CB = - 70V, I E = 0 V EB = - 5V, I C = 0 V CE = - 4V, I C = - 4A V CE = - 4V, I C = -10A I C = - 4A, I B = 0.4A I C = - 10A, I B = - 3.3A V CE = - 4V, I C = - 4A V CE = - 10V, I C = - 500mA, f = 500 k Hz-60 20 5 2 - 50 - 0.02- 0.5 100- 1.1 - 8-1.8VAmAmAVVVMHzD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD2955 PNP EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD3055 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERLOW SPEED SWITCHING APPLICATONSDPAK FOR SURFACE MOUNTAPPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE 3055 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: f T = 2MHz (MIN), I C = 500mAABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Dissipation ( T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I B P C P C T J T STG 70 60 5 10 6 201.75 150-55 150VVVAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product V CEO (sus) I CEO I CBO I EBO h FE V CE (sat) V BE (on) f T I C = 30mA, I B = 0 V CE = 30V, I E = 0 V CB = 70V, I E = 0 V EB = 5V, I C = 0 V CE = 4V, I C = 4A V CE = 4V, I C = 10A I C = 4A, I B = 0.4A I C = 10A, I B = 3.3A V CE = 4V, I C = 4A V CE = 10V, I C = 500mA f = 500 k Hz6020 5 250 0.020.51001.1 81.8VAmAmAVVVMHzD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD3055 NPN EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONS Load Formed for Surface Mount Application (No Suffix) Straight Lead (I.ACK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31CABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (TC =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage : MJD31 : MJD31C Collector Emitter Voltage : MJD31 : MJD31C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (TA=25C) Junction Temperature Storage Temperature VCBO VCEO VEBO IC IC IB PC PC TJ TSTG 40 100 40 100 5 3 5 1 151.56 150-65 150VVVVVAAAWWCCCharacteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : MJD31 : MJD31C Collector Cutoff Current : MJD31 : MJD31C Collector Cutoff Current : MJD31 : MJD31C Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product VCEO (sus) ICEO ICES IEBO hFE VCE(sat) VBE(on) fT IC = 30mA, IB = 0 VCE = 40V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 375mA VCE = 4A, IC = 3A VCE = 10V, IC = 500mA f = 1MHz 40100 25 10 3 50 50 20 201 501.21.8VVAAAAmAVVMHzD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. BMJD31/ 31C NPN EPITAXIAL SILICON TRANSISTORMJD31/ 31C NPN EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD32/32C PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERLOW SPEED SWITCHING APPLICATIONSDPAK FOR SURFACE MOUNTAPPLICATIONS Load Formed for Surface Mount Application (No Suffix) Straight Lead (I.PACK, “- I” Suffix) Electrically Similar to Popular TIP32 and TIP32CABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage : MJD32 : MJD32C Collector Emitter Voltage : MJD32 : MJD32C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C I B P C P C T J T STG - 40- 100 - 40- 100 - 5 - 3 - 5 - 1 151.56 150-65 150VVVVVAAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage : MJD32 : MJD32C Collector Cutoff Current : MJD32 : MJD32C Collector Cutoff Current : MJD32 : MJD32C Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product V CEO (sus) I CEO I CES I EBO h FE V CE (sat) V BE (on) f T I C = - 30mA, I B = 0 V CE = - 40V, I B = 0 V CE = - 60V, I B = 0 V CE = - 40V, V BE = 0 V CE = - 100V, V BE = 0 V BE = - 5V, I C = 0 V CE = - 4V, I C = - 1A V CE = - 4V, I C = - 3A I C = - 3 A , I B = - 375mA V CE = - 4V, I C = - 3A V CE = -10V, I C = - 500mA f = 1MHz -40-100 25 10 3 -50 -50 -20 -20-1 50-1.2-1.8VVAAAAmAVVMHzD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD32/ 32C PNP EPITAXIAL SILICON TRANSISTORMJD32/ 32C PNP EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD340 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (“ - I “ Suffix)ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300A , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation ( T A =25C) Collector Dissipation (T C =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C P C P C T J T STG 300 300 3 0.50.751.56 15 150-65 150VVVAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current* DC Current Gain V CEO (sus) I CBO I EBO h FE I C = 1mA, I B = 0 V CB = 300V, I E =0 V EB = 3V, I C = 0 V CE = 10V, I C = 50mA300 300.10.1240VmAmAD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. BMJD340 NPN EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD350 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (“ -I “ Suffix)ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300A , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (T A = 25C) Collector Dissipation (T C = 25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C P C P C T J T STG - 300 - 300 - 3 - 0.5- 0.75 1.56 15 150-65 150VVVAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current* DC Current Gain V CEO (sus) I CBO I EBO h FE I C = - 1mA, I B = 0 V CB = - 300V, I E =0 V EB = - 3V, I C = 0 V CE = - 10V, I C = - 50mA- 300 30- 0.1- 0.1 240VmAmAD-PAKI-PAK111. Base 2. Collector 3. Emitter1. Base 2. Collector 3. Emitter1999 Fairchild Semiconductor CorporationRev. B.1MJD350 PNP EPITAXIAL SILICON TRANSISTORTRADEMARKSACExCoolFETCROSSVOLTE2CMOSTMFACTFACT Quiet SeriesFASTFASTrGTOHiSeCThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:ISOPLANARMICROWIREPOPPowerTrenchQSQuiet SeriesSuperSOT-3SuperSOT-6SuperSOT-8TinyLogic1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN； NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.MJD41C PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERLOW SPEED SWITCHING APPLICATIONSDPAK FOR SURFACE MOUNTAPPLICATIONS Load Formed for Surface Mount Application (No Suffix) Straight Lead (I.PACK, “- I” Suffix) Electrically Similar to Popular TIP41 and TIP41CABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25C)* Pulse Test: PW 300s , Duty Cycle 2%Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (T C =25C) Collector Dissipation (T A =25C) Junction Temperature Storage Temperature V CBO V CEO V EBO I C I C I B P C P C T J T STG 100 100 5 6 10 2 201.75 150-65 150VVVAAAWWCCCharacteristic Symbol Test Conditions Min Max Unit* Collector Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current* DC Current Gain* Collector Emitter Saturation Voltage* Base Emitter On Voltage Current Gain Bandwidth Product V CEO (sus) I CEO I CES I EBO h FE V CE (sat) V BE (on) f T I C = 30mA, I B = 0 V CE = 60V, I B = 0 V CE = 100V, V BE = 0 V BE = 5V, I C = 0 V CE = 4V, I C = 0.3A V CE = 4V, I C = 3A I C = 6A, I B = 600mA V CE = 6 V , I C = 4 A V CE = 10V, I C = 50