内存基本知识)4DRAM工作原理.ppt

DRAM工作原理 DynamicRandomAccessMemoryEachcellisacapacitor atransistorVerysmallsizeSRAMusessixtransistorspercellDividedintobanks rows columnsEachbankcanbeindependentlycontrolled DRAM MainMemoryEverythingthathappensinthecomputerisresidentinmainmemoryCapacity around100Mbyteto100GbyteRandomaccessTypicalaccesstimeis10 100nanosecondsWhyDRAMforMainMemory Costeffective smallchipareathanSRAM HighSpeed thanHDD flash HighDensity Gbyte MassProduction Mainmemory Notation K M G Instandardscientificnomenclature themetricmodifiersK M andGtorefertofactorsof1 000 1 000 000and1 000 000 000respectively ComputerengineershaveadoptedKasthesymbolforafactorof1 024 210 K 1 024 210 M 1 048 576 220 G 1 073 741 824 230 DRAM density 256M bit 512M bit DRAMDensity WhatisaDRAM DRAMstandsforDynamicRandomAccessMemory RandomaccessreferstotheabilitytoaccessanyoftheinformationwithintheDRAMinrandomorder Dynamicreferstotemporaryortransientdatastorage Datastoredindynamicmemoriesnaturallydecaysovertime Therefore DRAMneedperiodicrefreshoperationtopreventdataloss Memory DRAMposition Semiconductormemorydevice ROM Nonvolatile MaskROM EPROM EEPROM Flash NAND lowspeed highdensity NOR highspeed lowdensity RAM Volatile DRAM DynamicRandomAccessMemory SRAM StaticRandomAccessMemory PseudoSRAM DRAMTrend Future HighSpeed DDR 333MHz 500MHz DDR2 533 800Mbps DDR3 800 1600Mbps Skew delayminimizedcircuit logic post chargelogic wave pipelining NewArchitecture multi bankstructure highspeedInterface LowPower 5 5V 3 3V sdr 2 5V ddr 1 8V ddr2 1 5v ddr3 1 2v SmallvoltageswingI Ointerface LVTTLtoSSTL opendrain LowPowerDRAM PASR TCSR DPD HighDensity Memorydensity 32MB 64MB 1GB 2GB 4GB applicationexpansion mobile memoryDBforshock thanHDD Processshrink 145nm 03 120nm 04 100nm 90nm 80nm OtherTrends CostEffectiveness TechnicalCompatibility Stability Environment Reliability StaticRAM SRAMBasicstorageelementisa4or6transistorcircuitwhichwillholda1or0aslongasthesystemcontinuestoreceivepowerNoneedforaperiodicrefreshingsignaloraclockUsedinsystemcacheFastestmemory butexpensive DynamicRAM DRAMDensertypeofmemoryMadeupofone transistor 1 T memorycellwhichconsistsofasingleaccesstransistorandacapacitorCheaperthanSRAMUsedinmainmemoryMorecomplicatedaddressingscheme RefreshinDRAMs Capacitorleaksovertime theDRAMmustbe REFRESHED CapacitanceLeakage SRAMvs DRAM DRAMLeadFrameandWirebonding DRAMArchitecture SDRAMhasthemultibankarchitecture ConventionalDRAMwasproductthathavesinglebankarchitecture Thebankisindependentactive memoryarrayhaveindependentinternaldatabusthathavesamewidthasexternaldatabus Everybankcanbeactivatingwithinterleavingmanner Anotherbankcanbeactivatedwhile1stbankbeingaccessed Burstreadorwrite MultiBankArchitecture DRAMMultiBankArchitecture DRAMSingleBankArchitecture DRAMBlockDiagram 1 DRAMBlockDiagram 2 DRAMCoreArchitecture DRAMAddress DRAMCoreArchitecture 16bitDRAMCore DRAMDataPath DRAM1T 1Cstructure RAS rowaddressstrobeCAS columnaddressstrobeWE writeenableAddress codetoselectmemorycelllocationDQ I O bidirectionalchanneltotransferandreceivedataDRAMcell storageelementtostorebinarydatabitRefresh theactiontokeepdatafromleakageActive sensedatafromDRAMcellPrecharge standbystate DRAMKeyword DRAMcellarrayconsistofsomanycells Onetransistor OnecapacitorSmallsenseamplifierLowinputgainfromchargesharing CS Smallstoragecapacitor 25fFCBL Largeparasiticcapacitor over100fFVc StoragevoltageVCP halfVcforplatebiasVBLP halfVcforBLprechargebias initialbias DRAMCell DRAMArrayOverview SimplifiedExample ActivatingaRow ActivatingaRowMustbedonebeforeareadorwriteJustlatchtherowaddressandturnonasinglewordline Writing WritingArowmustbeactiveSelectthecolumnaddressDrivethedatathroughthecolumnmuxStoresthechargeonasinglecapacitor Reading ReadingArowmustbeactiveSelectthecolumnaddressThevalueinthesense amplifierisdrivenbackout TheSense Amplifier Sense AmplifierApairofcross coupledinvertersBasicallyanSRAMelementWeakerthanthecolumnmuxWritedatawill outmuscle thesense amplifierKeepsthedataatfulllevel Precharge PrechargeInactivestate nowordlinesactive PrechargecontrollinehighTiesthetwosidesofthesense amptogetherThismakesthebitlinesstayatVDD 2Onlystableaslongastheprechargecontrollineishigh otherwisethisisunstable Nocapacitorsconnected ActivationRevisited ActivationTurnofftheprechargecontrollineMakesthesense ampunstable itwantstogotoeither0or1insteadofstayingatVDD 2Averyveryveryshorttimelater turnonthewordlineoftherowtobeactivated CouplesthecapacitorontothebitlinesThis tips thebitlinestoholdthestoredvalue Thesense ampamplifiesthecapacitorbacktofullvalue hencethename DRAMRefresh Becausethestoredmemoryvalueisstoredonacapacitor thathasresistiveleakage thememoryisconstantly forgetting itscontents Eventually thechargeonthecapacitorwon tbeenoughtotipthesense ampintherightdirection But activatingarowrestoresthecellsonthatrowtotheirfullvalue Thereisanexplicitrefreshcommandthatjustactivatesandimmediatelydeactivatesarow TheDRAMhasaninternalcounterthatcontainsthenextrowtoberefreshedandincrementseverytimearefreshcommandisissued DRAMRefresh DataRetentionTime DRAMCellconsistsofcapacitancewhichhasleakageastime Retentiontimeisperiodformaintainingitsdataespecially 1 data Usually DRAMCellrefreshperiodis64msRefreshTiming tREF Realcellretentiontime Devicecharacteristic ex 90ms Hot tRFC Refreshcommandoperatingtime ex 75nsRefreshSpec BurstRefresh 64ms Distributerefresh 128Mbdevice 12Rowaddress 64ms 4K 15 6us 256Mbdevice 13Rowaddress 64ms 8K 7 8us AUTORefresh WhenthiscommandisinputfromtheIDLEstate thesynchronousDRAMstartsautorefreshoperation Duringtheauto refreshoperation refreshaddressandbankselectaddressaregeneratedinsidetheSynchronousDRAM Foreveryauto refreshcycle theinternaladdresscounterisupdated Accordingly 8192timesarerequiredtorefreshtheentirememory Beforeexecutingtheauto refreshcommand allthebankmustbeIDLEstate Inaddition sincethePrechargeforallbankisautomaticallyperformedafterauto refresh noPrechargecommandisrequiredafterauto refresh SelfRefresh Self RefreshEntry SELF WhenthiscommandisinputduringtheIDLEstate theSynchronousDRAMstartsself refreshoperation Aftertheexecutionofthiscommand selfrefreshcontinueswhileCKEisLow Sinceself refreshisperformedinternallyandautomatically externalrefreshoperationsareunnecessary Self RefreshExit SELFX Whenthiscommandisexecutedduringself refreshmode theSyncDRAMcanexitfromself refreshmode Afterexitingfromself refreshmode theSyncDRAMenterstheIDLEstate noPrechargecommandisrequiredafterauto refresh ModeRegister SpecialcommandtoinitializetheDRAMBurstlengthInterleavingCASLatency readcommandtoreaddatainclocks ForDDR DLLresetisalsohere MRSBlockDiagram ModeRegister Becausethestoredmemoryvalueisstoredona ExtendedModeRegister SpecialcommandtoinitializeDDRDRAMDDRonly don tuseforSDRDLLEnableDriveStrength DRAMInterface CommandSignalsCAS RAS WE CS CS CAS ReadCS WE CAS WriteCS RAS CAS RefreshCS RAS ActivateCS WE BurstStopCS WE RAS PrechargeCS WE CAS RAS MRSorEMRSAllothers NOPOthersignals CLK DATA DQS DRAMInterface AllsignalsgofromthehosttothememoryexceptDQSanddatawhicharebi directional ReadCycle TypicalReadCycleBurstLength4CASLatency 3 WriteCycle TypicalWriteCycleBurstLength4Writelatencyisalwayszero DataClocking CLKisalwaysdrivenbythehostDQSisdrivenbywhoeverisdrivingthedataNVchipdrivesonwritecyclesMemorychipdrivesonreadcyclesThisschemeiscalled source synchronousclocking EliminatesalotofthetimingheadachesfromSDRAddsmargin Latencies AllkindsActivatetoPrechargeLastwritedatatoprechargeActivatetoReadActivatetoWriteRefreshcycletimeRefreshintervalMinimumrowacti