等离子技术.ppt

等离子技术讲座 等离子原理及其应用PLASMATRAININGPROGRAM 目录Agenda 等离子技术在高级封装工业的应用ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries 等离子技术简介IntroductiontoPlasmaTechnologyMarch公司产品介绍ProductsofMarchPlasmaSystems 等离子技术在高级封装工业的应用PlasmaApplicationinAdvancedPackagingIndustries 综述Overview 微电子工业MicroelectronicIndustryFlash EEPROMDRAM SRAMAnalog LinearMicrocontrollers Microprocessors MicroperipheralsASIC光电子工业OptoelectronicIndustryLaserDiodesFiberAssemblyHermeticPackagingMEMS印刷电路工业PrintedCircuitIndustryPrintedCircuitBoard 集成电路封装面临的挑战ICAssemblyandPackaging SpecificChallenges 不良的芯片粘结PoorDieAttachInsufficientHeatDissipationDuetoPoorDieAttach不良的导线连接强度PoorWireBondStrengthContaminationonBondPad覆晶填料FlipChipUnderfillFilletHeightofUnderfillVoidinFlipChipUnderfill剥离DelaminationLaminateMaterialsReleasingMoistureMetalLeadframeOxidation印刷电路板孔中的残余物SmearinginPrintedCircuitBoards打印记号Marking 等离子体应用PlasmaApplications 表面污染物去除ContaminationRemovalWireBondingEncapsulationBallAttach ContaminationSources Fluorine NickelHydroxide Photoresist EpoxyPaste OrganicSolventResidue smearinPCB andscum 表面活化SurfaceActivationDieAttachEncapsulationFlipChipUnderfillMarking表面改性和刻蚀SurfaceModificationandEtchFluxlessSolderingCladdinglayerremovalonfiber 表面活化 芯片粘结SurfaceActivation DieAttach ProperDieAttachCriticalHeatDissipationDelaminationPlasmaTreatmentofSubstratePriortoDieAttachPromotesAdhesionofEpoxyRemovesOxidationForGoodSolderReflowBetterBondBetweenDieandSubstrateBetterHeatDissipationMinimizesDelamination 污染物去除 导线连接ContaminationRemoval WireBonding PoorWireBondStrengthContaminationOxidationSmallerBondPadPitches80mmto25mmHigherRatioofContaminationtoPadandWireDeformationWeldingInhibitedByPhysicalProcess ContaminantsActAsPhysicalBarrierChemicalProcess ContaminantsFormBondsWithSurfacesandMinimizeAdhesionEpoxyResinBleedout 污染物去除 导线连接ContaminationRemoval WireBonding PlasmaProcessingRemovesTraceContaminationandOxidationFromSubstratesMetalCeramicPlasticWireBondStrengthSignificantlyIncreasedThroughputIncreased LowerPressureRequired 污染物去除和表面活化 封装ContaminationRemovalandSurfaceActivation Encapsulation MoldingCompoundMustAdhereToDifferentCompoundsSubstrateMaterialSolderMaskDieMetalBondPadsSeveralMaterialsBondingtoOneAnotherDelaminationCanResultFromPoorSurfaceActivityandContamination DelaminationBiggestChallengeForOrganicBasedSubstratesLaminateMaterialsAbsorbWaterFromAirandtheFluxResidueRemovalProcessTrappedMoistureReleasedFromHighTemperatures UseorSolderingOxidationonMetalLeadframesCanInhibitAdhesionofFrametoMoldPlasmaTreatmentofBGAPackages OtherPolymerSubstrates andMetalLeadframesImprovesSurfaceActivityAchievesGoodAdhesionMinimizesDelamination 污染物去除和表面活化 封装ContaminationRemovalandSurfaceActivation Encapsulation 表面活化 填料SurfaceActivation Underfill UnderfillRequiredinFlipChipMinimizeThermalCoefficientofExpansion CTE MismatchBetweenDieandSubstrateChallengeVoidFreeWickingSpeedDifficultwithLargeDiesandHighDensityBallPlacementPlasmaTreatmentIncreasesSurfaceEnergyPromotesAdhesionIncreasingWickingSpeedsDecreasedVoiding PresenceofOxidesInhibitsWireBondingLimitsGoodDieAttachmentInhibitsSolderReflowPlasmaTreatmentReducesMetalOxidesImprovesWireBondStrengthImprovesDieAttachmentImprovesSolderReflow 氧化物去除OxidesRemoval 印刷线路板上的残余物清除DesmearinginPCB SmearinginPrintedCircuitBoards PCB ViasMechanicallyorLaserDrilledLaminateMaterial EpoxyResin IsSmearedOverEdgesOfInnerMetalConductorLinesSubsequentPlatingOfTheViasMustElectricallyConnectAllTheConductorLinesSmearedResinMustBeRemovedToEnsureGoodElectricalContactPlasmaTreatmentRemovestheEpoxyResinsProducingCarbonDioxideandWater 集成电路封装中等离子工艺的应用ICAssemblyandPackaging PlasmaSolutions ImprovesDieAttachImprovedWireBondStrengthWithMinimalProcessRequirementsEffectiveEncapsulationofMetalandOrganicBasedPackagesMinimizesVoidsinFlipChipUnderfillDesmearinginPrintedCircuitBoards 等离子工艺的其它应用OtherPlasmaApplications SurfaceActivationofNumerousMaterials Polymers andMetals材料表面的活化ThinFilmEtch Al Si SiO2 Si3N4 W WSixOrganicRemoval去除有机污染物OxideRemoval去除氧化物ResidualFluorineRemoval去除氟的残物HydrophilationHydrophobationPlasmapolymerizationPECVD 关键参数CriticalProductParameters ProductType处理方式Metalvs LaminateChemicalSensitivityTemperatureSensitivityProductHandling产品放置MagazineSingleStripProcessRequired工艺的要求ContaminationRemovalSurfaceActivationThroughput产量的要求Uniformity均匀性要求 等离子工艺参数ParametersForPlasmaProcessing PowerSupplyFrequencyandPower电源的功率和频率ChamberandElectrodeConfiguration腔体的结构Pressure气压GasandConcentration工艺气体的选择Time处理的时间PumpingSpeed真空泵的速度ProductPositioning产品的位置ParametersFunctionofProductType 单一工艺不适合所有的应用SingleProcessWillNotWorkForAllApplications等离子技术及集成电路封装工艺的知识是成功应用的关键KnowledgeOfICPackageandPlasmaTechnologyCriticalForSuccessfulApplicationMARCH拥有等离子应用的专家解决你的问题MarchMaintainsExpertsTrainedInPlasmaTechnologyToSolveYourProblem March 等离子技术PlasmaTechnology 等离子体简述Plasma What Why How 什么是等离子体What GasPhaseMixtureConsistsof Neutral PhysicallyActiveandChemicallyReactiveSpecies如何工作How ByPhysicalBombardmentandChemicalReactiontoRemoveContaminationActivateSurfaceEtch为什么要用等离子体技术Why ImprovesYieldsandEnhancesReliabilityofICPackagesImprovesAdhesionofWireBonds DieAttach andMoldingEaseofUse EnvironmentallyBenign LowCoO 什么是等离子体WhatisaPlasma FourthStateofMatter 固态 液态 气态 等离子态Solid Liquid Gas PlasmaEnergyEnergyEnergy 什么是等离子体WhatisaPlasma 等离子体的组成ComponentsofaPlasma 电子Electrons离子IonsPositiveAr e Ar 2e NegativeCl2 2e 2Cl 自由基FreeRadicals CH4 e CH3 H e 光子PhotonsAr e Ar e Ar e hn中性粒子Neutrals 等离子体特性PlasmaProperties 高能量态HighEnergyStatePhysicalWorkChemicalWork电中性的ElectricallyNeutralEqualNumbersOfPositiveandNegativeSpeciesDegreeofDissociation 0 1 0 01 ElectricallyConductive 表面反应机理 物理反应SurfaceReactionMechanisms Physical PhysicalSputtering ArgonPlasmaSubstratePlacedon ElectrodeAr IonAttractedto ElectrodeImpactForceRemovesContaminationAdvantagesNon ChemicalReaction NoOxidationPureSubstrateRemainingDisadvantages EasytoMinimizeSubstrateDamage Impact andOverheatingPoorSelectivityLowEtchRateContaminantRedeposition 表面反应机理 化学反应SurfaceReactionMechanisms Chemical PlasmaGeneratedReactiveChemicalSpeciesSourceChemicalsInclude H2 O2andCF4IonizedSourceChemicalProducesReactiveSpeciesGasPhaseProductsProducedFromReactionswithSubstrateSurfaceAdvantagesHighCleaningSpeedHighSelectivityEffectiveforOrganicContaminantsDisadvantages OxidesCanBeProduced 表面反应总结SummaryofSurfaceReactionMechanisms 等离子技术的优点AdvantagesofPlasmaTreatment VeryEffectiveforSurfaceCleaning Activation andEtchingEnvironmentallyFriendly LowGasFlowNon Hazardous非危险NoAqueousChemicalsUsedNoPersonnelExposuretoChemicalsThreeDimensionalTreatmentCapability 3D处理 ControllableLowCostOfOwnershipMinimalMaintenanceEaseofUse AutomatedHighUniformityandReproducibility 等离子工艺PlasmaProcess 气相 固相表面相互作用GasPhase SolidPhaseInteractionPhysicalandChemical分子级污染物去除MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminantsFingerPrintsFluxGrossContaminants OxidesEpoxySolderMask OrganicResiduePhotoresistMetalSalts NickelHydroxide 等离子体的产生GeneratingaPlasma 等离子体的产生GeneratingaPlasma GasToBeIonizedChamberWithElectrodesMaterialsAluminumStainlessSteelGlass Quartz PyrexConfigurationBarrelCylindricalUsuallyGlassExternalElectrodesParallelPlateBoxInternalElectrodes Powered Grounded orFloatingCustom 等离子体的产生GeneratingaPlasma VacuumPumpMilliTorrProcessRequirements 50mTorr 500mTorr RapidlyRemoveByproductsRotaryVanePumpRootsBlowerPowerSupplyEnergySourceVariousFrequencies2 45GHz13 56MHz40kHzDCVariousPowers 等离子体的重要特性ImportantPropertiesofaPlasma 等离子工艺优化EffectivePlasmaProcessingRequiresOptimum PhysicalProcessesChemicalProcesses等离子工艺参数PlasmaPropertiesThatDictateProcessPerformance IonDensityIonEnergyDCBias 等离子体的电子和离子特性PlasmaElectronandIonProperties 离子密度IonDensityNumberofIonsperUnitVolumeTypically1Ionper10 000Neutrals100Radicalsper10 000NeutralsHigherIonDensity HigherNumberofReactiveSpeciesHighNumberofActiveSpecies IncreasedSpeed andUniformityRequiresEfficientCouplingofPower 等离子体的电子和离子特性PlasmaElectronandIonProperties 离子能量IonEnergyEnergyofIonToDoWork SputteringSputteringChargedSpeciesCollidesWithSurfaceEnergySufficientToBreakBondsSurfaceMaterialReleasedNarrowRangeExcessIonEnergy UnwantedSputteringTooLowIonEnergy NoSputteringorSlowProcess 等离子体的电子和离子特性PlasmaElectronandIonProperties 直流偏压SelfDCBiasNegativeDCBiasAtPowerElectrodeCapacitivelyCoupledElectronsRespondtoAlternatingElectricalFieldCapacitorPreventsElectronFlowAtPowerElectrodeElectronsAtGroundElectrodeFlowToGroundPotentialElectronBuildUpAtElectrodeCausesPotentialDifferenceBetweenPoweredandGroundElectrodes SelfDCBiasDCBiasIncreasesIonEnergyDirectionalityofIonsImportantParameters Pressure Power ProcessGas 等离子处理模型PlasmaModes DirectSamplePlacedDirectlyInDischargeSamplesPlacedOnGroundorPoweredElectrodes ApplicationDependentAggressiveDownstream Shielded PlasmaGeneratedDownstreamOfSamplesGasPhaseActiveSpeciesDirectedToSampleIonsRemovedRadicalsandPhotonsPerformWorkReactiveIonEtch RIE DirectandAnisotropicSamplesPlacedOnPoweredElectrode SelfBias DirectPlasma Argon Ar DirectPlasma Oxygen O2 Downstream Ion FreePlasma Downstream Ion FreePlasma 等离子处理模型PlasmaModes ReactiveIonEtch RIE DirectandAnisotropicSamplesPlacedOnPoweredElectrode SelfBias 成功应用的关键参数CriticalParametersForSuccessfulApplication PowerSupplyFrequencyandPowerChamberandElectrodeConfigurationPressureGasandConcentrationTimePumpingSpeedProductPositioningParametersFunctionofProductType 电源功率及频率PowerSupplyFrequencyandPower GeneralTrend HigherFrequency LowerIonEnergyHigherFrequency HigherIonDensityHigherPowerIncreasesEtchRateIncreasesTemperaturePowerSuppliesDCLowFrequency 40kHz 100kHz MediumFrequency 13 56MHz HighFrequency 2 45GHz 为什么选择频率13 56MHz Frequency Why13 56MHz IonEnergy IonDensity PowerFrequency DC40 100kHz13 56MHz2 45GHz 真空腔及电极组合ChamberandElectrodeConfiguration BarrelExternalElectrodesNon UniformPlasmaParallelPlateInternalElectrodesPolarityPoweredHigherEtchRate HigherTemperature LowerUniformityGroundLowerEtchRate LowerTemperature HigherUniformityFloating 气体及浓度GasandConcentration Argon Ar InertPhysicalProcess SurfaceBombardmentAr e Ar 2e Ar ContaminantVolatileContaminantTwotoFiveNanometersRemovedApplications OxideRemoval EpoxyBleedoutOxygen O2 ChemicalProcess OxidationofNon VolatileOrganicsO2 e 2O e O OrganicCO2 H2ORateFunctionofGasConcentration HighPressureCanOxidizeSurfacesandDamageLaminatesMinimizeWithArorAr O2 气体及浓度GasandConcentration Hydrogen H2 ChemicalProcessApplicationsRemoveOxidationOnMetalsCleanMetalsWithoutOxidationCarbonTetrafluoride CF4 NormallyMixedWithOxygenChemicalProcessFreeRadicalsReact CO2 H2O andHFHigherEtchRate HigherPressureOtherGases Helium Nitrogen FormingGas SulfurHexafluoride 气体及浓度GasandConcentration 化学清洗工艺 化学清洗工艺 物理清洗工艺 气体压力Pressure AverageForceOfGasMoleculesOnChamberWallChamberPressureGasFlowOutgassingRatePumpingSpeedInGeneralHigherPressures 200 800mTorr ChemicalProcessesHigherPressure LargerConcentrationofReactiveSpeciesHighConcentration FasterEtchRatesLowerPressures 50 200mTorr PhysicalProcessesLowerPressure LongerMeanFreePathLongMeanFreePath HigherEnergyOfIons 处理时间ProcessingTime LongerProcessTime MoreMaterialRemovedBalanceProcessTimeWithPower HigherPower FasterEtchRatePressure HigherPressure FasterEtchRateGasTypeandConcentrationChamberElectrodeConfigurationMinimizeTime MaximizeThroughput 样品位置ProductPositioning DirectOpenPlacementOnShelvesCarrierorMagazineRequireLowerPressuresForLongerMeanFreePathsEasyToGetReactiveSpeciesIntoCarrierChemicalOrPhysicalProcessPitchIsCriticalUniformityChallenges 在清洗盒中处理TreatmentInMagazine TypicalPlasmaCondition Lowsystempressure about100mTorr isrequired IncreasethemeanfreepathDecreasethehotspotsinchamberPitchshouldbelargerthan6mm Theopenslotonthesidewallofmagazineisrequired 真空泵速度PumpingSpeed PumpRequiredToMaintainVacuumSweepAwayPlasmaByproductsMinimizeRe contamination 等离子工艺中可能的问题 温度PlasmaProblems Temperature PlasticPartsareSusceptibletoHighTemperatureFactorsThatEffectTemperatureSubstrateMaterialofConstructionConductive MetalLeadframesNonconductive BGAPlacementofPartsonElectrodeGround CoolerTemperature LongerProcessTimesPowered HotterTemperature ShorterProcessTimesProcessPowerandFrequencyHigherPower HigherTemperatureLowerFrequency HigherTemperature40kHz 13 56MHzProcessGasandGasFlowHigherGasFlow LowerTemperature 等离子工艺中可能的问题 温度PossibleProblemsInPlasma Temperature FactorsThatEffectTemperatureProcessTimeLongerProcessTime HigherTemperatureChamberTemperatureTypically 1250CPXProductLineHasOptionalLiquidCooledShelves 等离子工艺中可能的问题PossibleProbleminPlasma 均匀度UniformityGasSupplyandRemovalShouldBeUniformChemicalProcessesTypicallyHaveHigherUniformityLongerMeanFreePath LowerPressuresForPhysicalProcessesCanHelp表面变色DiscolorationHeatBuildUpComplexPartsCanCreatePlasmaHotSpots处理寿命TreatmentLongevityFunctionOfSubstrateMaterialHumidityOutgassingofPlasticizersandMoldReleaseCompounds 等离子工艺中可能的问题PossibleProblemsInPlasma 荷载影响LoadingEffectMaterialsOutgasUnderVacuumEffectsPumpDownTimeBasePressureDisplaceProcessGasesAmountofSubstrateMaterialinChamberEffectsProcessMaterialQuantityCanAffectPlasmaDensityGasSupplyCouldBeInsufficient副产品ByproductsOvertime CF4WillPolymerizeOnChamberWallsandCanDepositonTheSubstrateSurfaces 表面接触角检测ContactAngleMeasurements CAM ContactAngleIndicatesSurfaceEnergyCharacterizesInterfacialTensionSolid LiquidDropLowSurfaceEnergySolid Hydrophobic LiquidSurfaceTension SolidSurfaceEnergyLiquidFormsSphericalShapeHighSurfaceEnergySolid Hydrophilic LiquidSurfaceTension SolidSurfaceEnergyLiquidFormsLowProfileFlatterDropletViewDropletsOfLiquidOnSurfaceLineTangentToCurveOfDropletAngleBetweenTangentLineandSolidSurface March 等离子技术PlasmaTechnology NotAllPlasmaSystemsAreTheSame 集成电路封装技术ICPackagingTechnology NotAllPackagesAreTheSame 成功应用SuccessfulApplicationofPlasmaTechnologyforIntegratedCircuitPackaging March产品MarchProducts Batchvs Automated EquipmentSolutions AP 1000e8 AP 1000 BatchSystemSolutions AP 1000 FlexibleShelfConfigurationCompleteSystemEnclosurePLCControllerVerticalDoorOptione8OptionCEandSEMIS2 93CompliantApplicationsMagazineTreatmentAuerBoatProcessingWaferCleaningMCMCarriersBoards AP1000VerticalDoor HigherthroughputsImproveduniformityMatrix ArrayPkgsMetalLeadframes AP 1000e8 MultiTRAK ITRAK AutomatedSystemSolutions XTRAK AutomatedSystemSolutions UnparalleledUniformityCompactChamberDesignBalancedGasFlowUniqueVacuumExhaustGuaranteedRepeatabilityStripbyStripProcessingClosedorOpenMagazinesNoPitchRestrictionsSpeedTotalOverheadTime SecondsInfeedVacuumandPlasmaOutfeed StripSizedChamberITRAKWidth38 78mmLength178mm 235mmXTRAKWidth16 154mmLength76 305mmPLCContr