Adel S.Sedra微电子电路期中复习PPT.ppt

Review 2011 04 2 Characteristicsofthissubject Engineering 1 Paymoreattentiontoqualitativeanalysis 2 quantitativeanalysis approximatelycomputing especiallyfornonlinearcircuits 3 Approximatelycomputingshouldbe reasonable 4 Differentparametersshouldbeestimatedbydifferentmodels PracticethedesignanddebugofyourcircuitsusingEDAtoolsandrealmeasuredevices Howtostudythissubject Masterthreebasic Basicconcept basiccircuitandbasicanalysismethodsallthingsconsideredanddialecticallyanalyzethecircuitsTheapplicationsofbasictheoremandLaws Forexample Kirchhoff slaw Thevenintheorem Nortontheorem ohmtheoremandsoon Devices BJTs4 Circuits TheContentofmicroelectroniccircuits Basicamplifiers45 Diodes3 FETs5 Differentialamplifiers6 Poweramplifiers9 Analogintegratedcircuits10 Signalgenerators12 Frequencyresponse7 FeedbackAnalysis8 Diodes Diodes 1 BasicConcept IntrinsicSemiconductor 本征半导体 Carriers 载流子 Thermalionization 热激发 Recombination 复合 Thermalequilibrium 热平衡 DopedSemiconductor 掺杂半导体 Ptypesemiconductor P型半导体 Ntypesemiconductor N型半导体 Diffusion 扩散运动 Drift 漂移运动 Majoritycarriers Majoritycarrierisonlydeterminedbytheimpurity butindependentoftemperatureMinoritycarriers onlygeneratedbythermalionizationandarestronglyaffectedbytemperature BasicConcept Someimportantresults Afreeelectronisnegativechargeandaholeispositivecharge Atasteadytemperature therecombinationrateisequaltotheionizationrate Carrierconcentrationinthermalequilibrium IntrinsicSemiconductor cont d Importantnotes hasastrongfunctionoftemperature Thehighthetemperatureis thedramaticallygreatthecarrierconcentrationis Atroomtemperatureonlyoneofeverybillionatomsisionized Silicon sconductivityisbetweenthatofconductorsandinsulators Actuallythecharacteristicofintrinsicsiliconapproachestoinsulators CharacteristicsofSiliconJunctionDiodes ForwardbiasedReversebiased TheDiodeModelsandapplications CircuitModelSimplifieddiodemodelTheconstant voltage dropmodelSmall signalmodelIdealmodelZenerDiodeModel Thecircuitmodelsarederivedfromapproximatingthenonlinearcurveintopiecewise line ModelingthediodeForwardcharacteristic ModelingthediodeBreakdowncharacteristic BJTs PhysicalStructure emitterregion ntype baseregion ptype collectorregion ntype emitter E base B collector C emitter basejunction EBJ collector basejunction CBJ Threeregions Threeterminals Twopnjunctions OperationModes Dependingonthebiascondition forwardorreverse ofeachofthetwojunctions therearedifferentmodesofoperationoftheBJT Inthiscourse wearemainlyinterestedintheamplificationmode Current voltageCharacteristics Inputcurveissimilartothatofthediode iB OutputCurvesforCBConfiguration Theequivalentcircuitin a representstheBJTasavoltage controlledcurrentsource atransconductanceamplifier Theequivalentcircuitin b representstheBJTasacurrent controlledcurrentsource acurrentamplifier TheHybrid Model Thesemodelsexplicitlyshowtheemitterresistancereratherthanthebaseresistancerpfeaturedinthehybrid pmodel TheTModel Summaryofmodelparameters 1 ModelparametersintermsofDCbiascurrents 2 Modelparametersintermsofgm 3 Modelparametersintermsofre 4 Relationshipsbetween and Applicationofthesmall signalequivalentcircuit theanalysisprocess DeterminethedcoperatingpointoftheBJTandinparticulartheIcCalculatethevaluesofthesmall signalmodelparameters DrawtheACcircuit eliminatethedcsourcebyreplacingeachdcvoltagesourcewithashortcircuitandeachdccurrentsourcewithanopencircuitReplacetheBJTwithoneofitssmall signalequivalentcircuitmodelsAnalyzetheresultingcircuittodeterminetherequiredquantities e g voltagegain inputresistanceandoutputresistance LargevoltagegainInvertingamplifierLargecurrentgainInputresistanceisrelativelylow Outputresistanceisrelativelyhigh Frequencyresponseisratherpoor SummaryofCEamplifier VerylowinputresistanceHighoutputresistanceShort circuitcurrentgainisnearlyunityHighvoltagegainNoninvertingamplifierCurrentbufferExcellenthigh frequencyperformance SummaryoftheCBAmplifier NoninvertingamplifierHighinputresistanceLowoutputresistanceVoltagegainissmallerthanbutveryclosetounityLargecurrentgainThelastoroutputstageofcascadeamplifierFrequencyresponseisexcellentwell SummaryforCCAmplifierorEmitter Follower TheCEconfigurationisthebestsuitedforrealizingtheamplifiergain IncludingREprovidesperformanceimprovementsattheexpenseofgainreduction TheCBconfigurationonlyhasthetypicalapplicationinamplifier Muchsuperiorhigh frequencyresponse Theemitterfollowercanbeusedasavoltagebufferandexistsinoutputstageofamultistageamplifier SummaryandComparisons 2 5 3thecomparisonofthreebasicamplifiers Exercise chapter3 Readtheexample3 6and3 8 电路如图所示 已知ui 5sin t V 二极管导通电压VDo 0 7V 试画出ui与uO的波形 并标出幅值 已知所示电路中稳压管的稳定电压UZ 6V 最小稳定电流IZmin 5mA 最大稳定电流IZmax 25mA 1 分别计算UI为10V 15V 35V三种情况下输出电压UO的值 2 若UI 35V时负载开路 则会出现什么现象 为什么 Chapter4 BJT 已知图P2 10所示电路中晶体管的 100 r 1k 1 现已测得静态管压降UCEQ 6V 估算Rb约为多少千欧 2 若测得和的有效值分别为1mV和100mV 则负载电阻RL为多少千欧 判断题 1 在N型半导体中如果掺入足够量的三价元素 可将其改型为P型半导体 2 因为N型半导体的多子是自由电子 所以它带负电 3 PN结在无光照 无外加电压时 结电流为零 4 处于放大状态的晶体管 集电极电流是多子漂移运动形成的 1 PN结加正向电压时 空间电荷区将 A 变窄B 基本不变C 变宽 2 稳压管的稳压区是其工作在 A 正向导通B 反向截止C 反向击穿 3 当晶体管工作在放大区时 发射结电压和集电结电压应为 A 前者反偏 后者也反偏B 前者正偏 后者反偏C 前者正偏 后者也正偏 FETs ClassificationofFETsMOSFETNchannelPchannelJFETPchannelNchannel IntroductiontoFET EnhancementtypeDepletiontype EnhancementtypeDepletiontype Ann channelenhancement typeMOSFETwithvGSandvDSappliedandwiththenormaldirectionsofcurrentflowindicated TheiD vDScharacteristicsforadevicewithk n W L 1 0mA V2 OutputCharacteristicCurvesofNMOS Briefreview AMOSFEThasfourterminals ThebiasbetweentheGateandtheSourceisusedtocontrolthechannelwhichbuildsaconductingtunnelbetweentheDrainandtheSource Therearethreeoperationregion CutoffTriodeSaturation Briefreview AMOSFETatsaturationactsasacurrentsource TheDraincurrentiscontrolledbytheGatevoltageandisindependentoftheDrainvoltagePracticallythechannellengthmodulationeffectwillleadstheslightdependenceoftheDraincurrentonitsvoltage BiasedvoltageThetransistoristurnedoff Operatingincutoffregionasaswitch CutoffRegion BiasedvoltageThechanneldepthchangesfromuniformtotaperedshape DraincurrentiscontrollednotonlybyvDSbutalsobyvGS TriodeRegion processtranscon ductanceparameter Assumingthatthedraint sourcevoltageissufficientlysmall theMOSoperatesasalinearresistance TriodeRegion BiasedvoltageThechannelispinchedoff DraincurrentiscontrolledonlybyvGSDraincurrentisindependentofvDSandbehavesasanidealcurrentsource SaturationRegion neglectingthethechannel lengthmodulationeffectincludingtheeffectofchannel lengthmodulation modeledbyoutputresistancero VA ID TheSmall SignalModels TheTmodeloftheMOSFETaugmentedwiththedrain to sourceresistancero AnalternativerepresentationoftheTmodel TheSmall SignalModels InputresistanceVoltagegainOverallvoltagegainOutputresistance CharacteristicsofCSAmplifier VeryhighinputresistanceModeratelyhighvoltagegainRelativelyhighoutputresistance SummaryofCSAmplifier InputresistanceVoltagegainOverallvoltagegainOutputresistance CharacteristicsofCGAmplifier NoninvertingamplifierLowinputresistanceHasnearlyidenticalvoltagegainofCSamplifier buttheoverallvoltagegainissmallerbythefactor 1 gmRsig RelativelyhighoutputresistanceCurrentfollowe