PVD掉电检测与BKP入侵检测.docx

PVD掉电中断配置void PVD_NVIC(void) NVIC_InitTypeDef NVIC_InitStructure;/* Configure one bit for preemption priority */NVIC_PriorityGroupConfig(NVIC_PriorityGroup_1);/* Enable the PVD Interrupt */NVIC_InitStructure.NVIC_IRQChannel = PVD_IRQn;NVIC_InitStructure.NVIC_IRQChannelPreemptionPriority = 0;NVIC_InitStructure.NVIC_IRQChannelSubPriority = 0;NVIC_InitStructure.NVIC_IRQChannelCmd = ENABLE;NVIC_Init(&NVIC_InitStructure);void PVD_Init(void) EXTI_InitTypeDef EXTI_InitStructure; PWR_PVDLevelConfig(PWR_PVDLevel_2V9); / 设定监控的阀值 PWR_PVDCmd(ENABLE); / 使能PVD EXTI_InitStructure.EXTI_Line = EXTI_Line16; / PVD连接到中断线16上 EXTI_InitStructure.EXTI_Mode = EXTI_Mode_Interrupt; /使能中断模式 /EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Falling;/表示电压从低上升到高于阀值时产生中断 EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Rising;/表示电压从高下降到低于阀值时产生中断 /EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Rising_Falling;/表示电压上升或下降越过设定阀值时都产生中断 EXTI_InitStructure.EXTI_LineCmd = ENABLE; / 使能中断线 EXTI_Init(&EXTI_InitStructure); / 初始化exti寄存器掉电后，将数据保存到flash，掉电之前要把flash中的数据先清除，因为flash擦除需要时间很长，以至于无法办存下来，这段代码中的擦出操作需要提出来！void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite) u32 secpos; /扇区地址 u16 secoff; /扇区内偏移地址(16位字计算) u16 secremain; /扇区内剩余地址(16位字计算) u16 i; u32 offaddr; /去掉0X08000000后的地址 if(WriteAddr=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)return;/非法地址 FLASH_Unlock(); /解锁 offaddr=WriteAddr-STM32_FLASH_BASE; /实际偏移地址. secpos=offaddr/STM_SECTOR_SIZE; /扇区地址0127 for STM32F103RBT6 secoff=(offaddr%STM_SECTOR_SIZE)/2; /在扇区内的偏移(2个字节为基本单位.) secremain=STM_SECTOR_SIZE/2-secoff; /扇区剩余空间大小 if(NumToWrite=secremain)secremain=NumToWrite;/不大于该扇区范围 while(1) STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);/读出整个扇区的内容 for(i=0;isecremain;i+)/校验数据 if(STMFLASH_BUFsecoff+i!=0XFFFF)break;/需要擦除 if(isecremain)/需要擦除 FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);/擦除这个扇区 for(i=0;i(STM_SECTOR_SIZE/2) secremai