RF射频电路设计英文课件Lecture09-RFICandSOC

Lecture9,RichardLi,2009,1,1.InterferenceandIsolationoExistenceofInterferenceinCircuitryoDefinitionandMeasurementofIsolationoMainPathofInterferenceinaRFModuleoMainPathofInterferenceinaICDie2.ShieldingforaRFModulebyaMetallicShieldingBox3.StrongDesirabilitytoDevelopRFIC4.InterferenceGoingAlongICSubstratePathoExperimentationoTrenchoGuardRing5.SolutionforInterferenceComingfromtheSky6.CommonGroundingRulesforRFModuleandRFICDesignoGroundingofCircuit-branchesorBlocksinParalleloDCPowerSupplytoCircuit-branchesorBlocksinParallel7.BottlenecksinRFICoLowQInductorandPossibleSolutiono“Zero”CapacitorsoBondingWires8.ProspectofSOC9.WhatisNext?AppendixesoNotesaboutRFIClayoutoCalculationofQuarterWavelengthoProgressofElectronicIndustry,Lecture9:RFICGreatlyreducedsize,downmorethan1000times;Greatlyenhancedreliabilityofproduct,byatleast100times.,Lecture9,RichardLi,2009,7,4.InterferenceGoingAlongICSubstratePath,oExperimentation,Lecture9,RichardLi,2009,8,Table1InterferenceattenuationorisolationwheninterferencesignalgoesalongICsubstratepathS21-40dB,whenf=10MHz,S21-30dB,whenf=100MHz,S21-20dB,whenf=1000MHz,Lecture9,RichardLi,2009,9,oTrench,Figure5TrenchingofaRFblockistodigadeepditchencompassingtheRFblock,MainPCB,OneRFblock,Externalinterferencesource,ICsubstrate,Adeepditch,Internalinterferencesource,Lecture9,RichardLi,2009,10,oGuardRing,Lecture9,RichardLi,2009,11,Table2ComparisonofinterferenceattenuationorisolationbetweenthecaseswithandwithoutP+guardringWithoutP+guardringWithP+guardringFrequencyS21-40dB,-80to-70dB,10MHz,S21-30dB,-60to-55dB,100MHz,S21-20dB,-40dB,1000MHz.,Lecture9,RichardLi,2009,12,Table1TypicalwidthofguardringandspacingbetweenguardringsinaRFIClayoutItemValue.SpacingbetweenRFblockandP+guardring,S1=10m,SpacingbetweenP+guardringanddeepN-well,S2=1m,WidthofP+guardring,WP=10m,WidthofdeepN-wellguardring,WN=10m.,Lecture9,RichardLi,2009,13,5.SolutionforInterferenceComingfromtheSky,Lecture9,RichardLi,2009,14,Lecture9,RichardLi,2009,15,6.CommonGroundingRulesforRFModuleandRFICDesign,oGroundingofCircuit-branchesorBlocksinParallel,Lecture9,RichardLi,2009,16,Lecture9,RichardLi,2009,17,oDCPowerSupplytoCircuit-branchesorBlocksinParallel,Lecture9,RichardLi,2009,18,Lecture9,RichardLi,2009,19,7.BottlenecksinRFICDesign,oLowQInductorandPossibleSolution,Spiralinductor,Lecture9,RichardLi,2009,20,Skineffect,*PossiblereasonsofLowQvalue,Forcopper,0.66m,whenfrequency=10GHz,6.6m,whenfrequency=100MHz.,T0.1m.(ThicknessofthemetallayerinIC),Unfortunately,theexperimentsindicatethatthethinthicknessofthemetallayerisnotthemainreasonthatbringsaboutthelowQvalueoftheICspiralinductor.,2)AttenuationduetotheExistenceofSubstrate,Lecture9,RichardLi,2009,21,3)FluxLeakage,Lecture9,RichardLi,2009,22,4)FluxCancellation,Lecture9,RichardLi,2009,23,*PossibleSolutionofLowQValue,-Compensationofnegativeresistance,However,itisnotsosimpleinactualengineeringdesign.Thedifficultpointsare:Generatinganegativeresistance;Ensuringthatthereisnotnegativeresistanceoutsidetheexpectedbandwidth;Theremainednegativeresistanceinsidethebandwidthmustbekeptbelowasmallpositivevalue;Reducingcurrentconsumptionofgeneratingnegativeresistance,whichisusuallydonebyanactivedevice;Handlingthenoisegeneratedduetotheexistenceoftheactivedevice.,Lecture9,RichardLi,2009,24,o“Zero”Capacitors,oBondingPadDevelopinga“zero”capacitordirectlyontheRFICchip;Modelingthebondingwirewithhigheraccuracy.,oContinuetoStudyIsolation,StudyingisolationbetweenRFblocks,Studyingisolationbetweendigitalblocks.,StudyingisolationbetweenRFanddigitalblocks.,Lecture9,RichardLi,2009,26,9.WhatisNext?,Lecture9,RichardLi,2009,27,Appendixes,oRunner,*Lengthandwidth,A.1NotesAboutRFICLayout,*Multiplerunnersorcurvesinparallel,*Styleofrunner:Asshortaspossible,*Smoothoftherunner:Assmoothaspossible,*Placementofrunners:Doperpendicular,notparallelaspossible,*Corneroftherunner:Assmoothaspossible,Lecture9,RichardLi,2009,28,*Runnersinparallel,*Runnerinparallelwithgroundededge,Lecture9,RichardLi,2009,29,*Styleofrunner,“Nicelooking”-NO!“E-W,S-N”-NO!,Asshortaspossible-Yes!,A,B,A,B,FigureA.5TworunnerstylesfromAtoB.,Lecture9,RichardLi,2009,30,Lecture9,RichardLi,2009,31,*Comparisonofevenandun-evenrunners,l,A,B,W0,ZO,ZL,(a)Anevenrunner:W0=6m,Z0=50.2ohm,l=100m,C,D,W1,W0,l/2,l/2,Z0,Z1,ZL,(b)Anunevenrunner:W0=30m,Z0=21.2ohm,l/2=50m,W1=6m,Z1=50.2ohm,l/2=50m,ZC=48.4j7.9ohm,ZL=50+j0ohm,ZA=50+j0ohm,ZL=50+j0ohm,AdditionalCapacitor:Inseriers:-j7.9ohm=20.158.393.472.01pF1.02.45.810.0GHzInparallel:-j7.9ohm=20.158.393.472.01pF1.02.45.810.0GHz,FigureA.9Comparisonofimpedancebetweenevenandunevenrunner,Lecture9,RichardLi,2009,32,*Summaryaboutrunners,SmoothlyPerpendicularfromeachotheraspossibleAsshortaspossible,Lecture9,RichardLi,2009,33,oParts,*Device:Not“dragon”,butsquare!,Butsquare!,Lecture9,RichardLi,2009,34,*Inductor:Becareofthecoupling!,Dd1,d2Addguardring,Lecture9,RichardLi,2009,35,*capacitor,(b)Studyofcapacitorwithhighcapacitor/areaisinprogress.,CapacitorinRFICiscurrentlylimitedbyitsarea,Itisruledlessthanabout20pF,FigureA.14AreaofcapacitorisoneofimportantR,*TechnologyforRFICisstillinthedevelopmentphase;,*TechnologyforlogicordigitalICwithhighdataratemustbebasedonRFICTechnology.,Lecture9,RichardLi,2009,46,CompanyMotorolaPhilipsTek/MaximHarrisAD/IBMTechnologyMOSIC-5QB1C1QUICKCHIP-8UHF-1SiGeBiCmos85GST-2C-PIft(NPN)12/12GHz13GHz12/27/12GHz8.6GHz50GHzft(PNP)700/50M200MHz8.5G/50M8.5GHz4GHzStatusProProPro/DevProDevCycletime50days90days30-70days90days90daysRiskM-H/M-HML/M-H/L-MM-HM-HM-H$/wafer$1.2k/2kTBD$10kTBD$2kDesignsys.Cadence-QUICKICFASTRACSPICERFICMC13142SA601/6203600,oRFICdevelopment,TableA.2EarlystatusofRFICdevelopment(19951996),TableA.3PerformanceofRFfrontendICdevelopment(1996),Company(Motorola)(Philips)ChipMC13142*)SA601*)LNAMixerLNAMixerPowersupply3v3v3v3vCurrentdrain3.5mA4.0mA3.0mA4.4mAGain12dB6dB11.5dB6dBNoiseFigure2.0dB10dB1.6dB9.5dBIIP3-4dBm4dBm-2dBm-2dBmIsolation*)45dB40dB*)1GHz;*)881Mhz;*)FromLNAoutputtoMixerRFinput.,Lecture9,RichardLi,2009,47,TableA.4StatusofRFICdevelopment(19982000),IBM(1998)SiGeBiCMOSSGRF0100(LNA)SGRF4111(VCO)SGRF2113(LNA+IRMixer*)Vcc=3vVcc=3vVcc=3vIcc=5.5mAIcc=10.0mAIcc=15.0mAf=1.9GHzf=880/1850MHzf=900/1900MHzG=12.5dBk=120MHz/vG=22dBNF=1.2dBSBN=-92dBc/HzNF=3dBIIP3=13dBm20kHzoffsetIIP3=-12dBmPLO=-10dBmIso=20dB*)PLO=-10dBm,IF=400MHz,Load_IF=600ohm.,Infineon(2000)LNAPAPrescalar*)Vcc=3vVcc=2.8vVcc=2.3v-Icc=11.7mAf=1.9GHzf=900MHzf=20GHzG=28dBEff=54%Wic=0.5uNF=1.1dBPout=3.2watts*)Digital,ProcessingfTReliabilityCostSiGeBiCMOS50-75GHzOKL+SiCMOS15-25GHzGoodLSiBiCMOS15-35GHzGoodMGaAsMOS50-90GHzOK-H,RFMicroDevices(March