笔记本结构设计经验教训NB-ME-Design-Lesson-learnPPT课件

NBMELessonLearn,Case1,Issue:Hingebosscrack,Case1,Rootcause/Solution:,Case1,Rootcause/Solution:,Case2,Issue:HingeBracketbroken,Case2,Rootcause/Solution:,Case2,Rootcause/Solution:,Case3,Issue:E-sataJackInterferance,Case3,Rootcause/Solution:,ForstrengthconcernedtoEChingesupport,Case3,TherearedifferenttypeJackRDcheckMolexonly(noplastic),foxconnandtycohaveplastic0.7mmhighinterfere0.3mm,Rootcause/Solution:,Case3,Rootcause/Solution:,Case4,Issue:Smilegap,Rootcause/Solution:,1.Refertothepicture,thedimensionofthecenteroftheaxistotheironsurfaceis15.55mm0.1mm.2.Oldhingeactualdatefor5unitsasbelow:(1)15.48mm(2)15.43mm(3)15.43mm(4)15.40mm(5)15.45mm,ST:Reducerubberheight,LT:AddheightofAxis,Case5,Issue:PowerbuttonUVcoatingpeeloff,Case5,Rootcause:,Process,Coatingthickness,Substrate,Blackbasecoating,Primer(Basecoating),Plating,UVcoating,15m,8m,1.01.5m,815m,镭雕,Colory一般控制在1012m,中制程,雷雕工艺为整个工艺的最后一道，UV层破坏后没有保护动作。镭雕机功率设定过高，镭雕后周边区域碳化；镭雕机功率设定为额定功率的80%，约78W，频率为1200Hz,Case5,Solution:,降低镭雕机功率镭雕机功率降为额定功率的60%，约56W，频率不变变更工艺流程，雷雕工艺放在UVcoating之前，雷雕后通过UV保护,Blackbasecoating,Primer(Basecoating),Plating,UVcoating,15m,8m,1.01.5m,815m,镭雕,中制程,Case6,Issue:NoiseatK-locklocation,機器做open/close時，hinge的搖擺帶動K-lockBKT運功，其噴漆面與base摩擦產生異音.,Rootcause:,1.K-lockBKT與base的gap設計值為0;2.K-lockBKT與base接觸面為噴漆光面;3.K-lockBKT與hinge有鎖附關係;,Case6,Solution:,1.Shortterm:K-lockBKT噴漆面打磨為粗糙面/K-lock與base的結合面加點酒精.2.Longterm:Base偷肉0.2mm,增加base與K-lock的GAP的GAP,避免面對面的摩擦.,Case7,Issue:GapbetweenTopandBase,Case7,Rootcause:,MEStructure,Case7,Rootcause:,topshielding結構薄弱，screw鎖附時產生一個反向的力，導致卡勾瞬間脫離影響會微量的下陷；,Case7,Rootcause:,base上卡勾的supportrib在卡合面以下，且為斜面卡合，卡合受力後base卡勾向內變形，導致卡合量丟失；,Case7,在topshielding兩個鎖screw位置的中間加1pcsrubber，rubberZ軸干涉量0.5mm，形成一個跷跷板的支點；,Solution:,Case7,此位置的卡勾卡合方式由斜面卡合改平面卡合，並將BASE卡勾背面的supportrib加高到卡合面以上1mm的位置；,Solution:,Case8,Issue:UVCoatingpeelofffromTPpanel,NisshaIMRalreadybewithhardcoat,andanotherAkzoUVcoatingisontheIMR.ButAkzoUVcoatingcannotbegoodtomixwithIMRhardcoat.SoUVcoatingiseasytopeeloffonTPPlate,RootCause:,Case8,Solution:,Case8,ST:ChangetouseNisshaIMRfoilwhichiswithouthardcoat.LT:MoveIMRfoilbacktoPMMA,Case9,Issue:HookofBatteryLatchbroken,Case9,RootCause:,link卡勾後側base上的support面積太小且為R角結構，導致對卡勾配合面的support不夠；,Case9,Link與battery配合的卡勾根部及卡勾轉角處加0.5mm的R角後,Solution:,Case10,Issue:ThermalBlockinterferencewithCPU,SpringPlate,CuBase,Heatspreader,Interference,ThermalmoduleinterferencewithCPU.Causesystemshut-down.,Case10,1.ThermalTeamdonotrequestthermalvendortousewhatkindofassemblymethodtofixspringplate,Cu-baseandheatspreader.(Thermalteamside),2.ThermalvendorAurasusedwrongmethod(雞眼釘Copperrivet)tofixcontactstructure,resulting雞眼釘interferewithCPUcapacitor.(Vendorside),Fix,RootCause:,Case10,RootCause:,雞眼釘干涉,Copperrivet雞眼釘pitis0.35mm,Mylarthicknessis0.1mm,Totalthicknessis0.45mm,2DDimensionofAMDtheGapbetweenCPUdieandcapacitorisonlyabout0.2mm,Case10,Solution1:抽拉銅柱固定方式,製程方式：Cuheatspreader先抽拉出銅柱，之後再放入一個鉚合模鉚合彈片，銅塊。此方式可確保heatspreader面限高為零！,限高0mm,Solution:,Case10,Solution:,製程：Cuheatspreader先經一套鉚合模，鉚入實心銅柱，接下來在進另外一套鉚合模，鉚合彈片及銅塊。此方式需用到兩套鉚合模，故成本較高。但此方式亦可確保heatspreader面限高為零！,限高0mm,Solution2:鉚接實心銅柱固定方式,Case11,Issue:RAMdoorribshorttoRAMcapacitanceaspressthedoor,RootCause:,Case11,Solution:,1.Addmylaronramdoorribtopreventthisrisk.,2.Haveectocancelthisribtoenlargegap.,Case12,Issue:1.NopostorNopower2.MBcanpoweronwhenpressN.Bridgebyfinger,Case12,FA:,Case12,FA:Dye-Pry,Case12,FA:Dye-Pry,Case12,FA:CrossSection,Case12,FA:CrossSection,Case12,FA:CrossSection,Basedonaboveanalysis(cracklocationandmultiplexcrackinte