常见半导体材料特性参数

晶格结构300K晶格常数(A)密度300K带隙电子迁移率cm2/V.s acg/cm3eV300K GaN 纤锌矿 Wurtzite 3.18915.18566.073.41245 闪锌矿 Zinc Blende 4.526.15760 InN纤锌矿3.54465.70346.7819.53100 AlN纤锌矿3.1124.9823.2556.13 Si金刚石5.4312.3291.12间接1750 Al2O3纤锌矿4.75912.991 SiC 3C闪锌矿4.35963.21422.2980 4H纤锌矿3.0806515.117383.2112.86480 6H纤锌矿3.0806515.117383.21532.86375 GaAs闪锌矿5.653255.31761.429340 ZnO纤锌矿3.2535.2135.6753.37226 SiO22.279 Si3N4六方晶系3.445 空穴迁移率cm2/V.s有效质量 峰值迁移率(温度)300K峰值迁移率(温度)电子mn/m0空穴mp/m0 7400(60K)370500(250K)0.21.1 11000(50K)3501250(120K)0.130.19lh,1.3hh 5000(150K)0.12 140.33l，0.25t lz3.53,lx0.24 hz3.53,hx10.42 500000(8K)450350000(6K)0.98l,0.19t0.16lh,0.49hh 3000(6K)6080(210K)0.677l,0.247t 500.29l,0.42t 10940(50K)100240(150K)0.2l,0.42t 400000(30K)45028000(22K)0.0630.076lh,0.5hh 2400(40K)1800.27 0.31c 0.55c 电子迁移率cm2/V.s 少子寿命 （us）少子扩散长度 (um)介电常数 电子(p型)空穴(n型)电子(p型)空穴(n型)r/0 10-40.0150.23.410.4 9.7 9.3 9.14 8001000100080011.9 9.72 0.080.70.210.32 11920 (陷阱效应引起) 81.80.681.4610.03 0.0053105012.9 7.9 3.9 7.5 电子亲和势功函数饱和电子速度击穿电场电导率电阻率自由激子束缚能 eVeV107s105Vcm-1-1cm-1.cmmeV 3.32.5263361224 4.13124 10200300 -13.21.420117 10-4doped 10-12undoped 4.054.61.00E+0033.16E-0614.7 3.83124026.7 220 3.342.22460 4.154.712.00E+0042.38E-093.6 4355356 0.910141016 1014 波尔半径热膨胀系数300K热导率热扩散率熔点折射率 Aa/10-6K-1c/10-6K-1W/cm.Kcm2/s 315.593.1711.325182.29 32 3.62.638.416272.56 4.155.273.191.472752 422.59/3.771.560.914143.42 7.58.50.5 282.90.228302.48 2.94.928302.648 124.24.684.928302.56 1555.750.460.3112404.025 32372.94.7520272.2 0.50.0140.00617001.46 2.819002.05 杨氏模量Gpa泊松比努氏显微硬度 (与晶面有关)(与晶面有关)Gpa 200 (001)0.38 (001)10.2 191 (001)0.337 (001) 10 218 (001)0.323 (001)12 170 (111)0.262