GaN和InGaN多量子阱插入层的目的

Thepurposeofinsertionlayerbetweenthen-GaNandInGaNmultiplequantumwells,IEEEPHOTONICSTECHNOLOGYLETTERS,VOL.13,NO.11,NOVEMBER2001,EnhancedOutputPowerinanInGaNGaNMultiquantum-WellLight-EmittingDiodeWithanInGaNCurrent-SpreadingLayer,Forwardvoltage(at20mA):LED1:3.6VLED2:3.3V,Withn-InGaNinsertionlayer,ConventionalLED,QW1:,QW6:,Appl.Phys.Lett.,Vol.85,No.15,11October2004,HighluminescentefficiencyofInGaNmultiplequantumwellsgrownonInGaNunderlyinglayers,a:速率参数Ea：激活能,对InGaNUL:a1=1.8Ea1=39meV；对HT-GaN:a2=38Ea2=27meV；,a1是a2的20倍，Ea1Ea2表明：（1）非辐射复合的起源是一样的（2）采用InGaNUL有效降低了MWQs旁边的NRCs,JournalofCrystalGrowth286(2006)209212,ImprovedqualityofInGaN/GaNmultiplequantumwellsbyastrainrelieflayer,主峰：A:463nmB:455nm蓝移,JournalofCrystalGrowth286(2006)209212,ImprovedqualityofInGaN/GaNmultiplequantumwellsbyastrainrelieflayer,RMS:1.7nmV-pitsdensity:1618108/cm2,RMS:1.02nmV-pitsdensity:67108/cm2,JournalofCrystalGrowth310(2008)51625165,EffectofInGaNunderneathlayeronMOVPE-grownInGaN/GaNblueLEDs,JournalofCrystalGrowth310(2008)51625165,EffectofInGaNunderneathlayeronMOVPE-grownInGaN/GaNblueLEDs,JournalofCrystalGrowth310(2008)51625165,EffectofInGaNunderneathlayeronMOVPE-grownInGaN/GaNblueLEDs,M1V-pitsdensity:5.56.51018/cm2,M2V-pitsdensity:451018/cm2,Appl.Phys.Lett.90,161109,2007,HoleescapeprocessesdetrimentaltophotoluminescenceefficiencyinablueInGaNmultiple-quantum-welldiodeunderreversebiasconditions,HoleescapeprocessesdetrimentaltophotoluminescenceefficiencyinablueInGaNmultiple-quantum-welldiodeunderreversebiasconditions,Appl.Phys.Lett.90,161109,2007,Thepurposeofinsertionlayerbetweenthen-GaNandInGaNmultiplequantumwells:(1):Asacurrent-spreadinglayertodecreasetheoperatingvoltageandenhancetheoutputpower;(2):AsastrainreliflayertoweakenQCSEandthenimprovetheradiativerecombinationrate;(3):AsablockedlayertodecreasetheNRCsgeneratedattheGI-interface;(4):DecreasethevariationoftheIncompositionbetweentheQWsandspeciallyinthelowestQWneartheGII,Insertan-InGaNlayer,30nm,T=1020,实验,(002）Conv.:290.16arcsecWithan-InGaNinsertlayer:241.2arcsec,(102)Conv.:315.72arcsecWithan-InGaNinsertlayer:320.76arcsec,Fig.1.XRDrockingcurvesmeasuredfromthe(002)plane(Fig.2.(a)and(102)plane(Fig.2.(b)ofthetwosamples.,Vf(at20mA)Conv.:3.202VWithn-InGaNinsertlayer:2.998VIr(at-5V)Conv.:0.03uAWithn-InGaNinsertlayer:0.01uA,Fig.2.I-Vcharacteristicsoftwosamples,Fig.3.Luminescenceintensityoftwosamples.,Conv.LED:At20mA:62.46mcd(454nm)At100mA:201.94mcd(452nm)Withn-InGaNinsertlayer:At20mA:81.22mcd(460nm)At100mA:254.32mcd(458nm),2.低In组分的InGaN超薄插入层。,阱前插入低In组分的InGaN超薄层,阱后插入低In组分的InGaN超薄层,实验方案：在Si（111）面上生长100nm厚的