南科CellProcessflow简介(3)

1、Cell Process Flow IntroductionCell製程的目的製程的目的PI製程 Rubbing 製程 ODF製程 二切製程 FI製程Pattern On SubstrateBrush+Detergent+DI water+CJ+MSPI film printingPRE BAKEHeating PlateC/P cooling or Air coolingcooling plateHeating PlateHeat Reflecting PlatePOST BAKEPI配向膜燒成IR drying+UV cleaningPI製程 Rubbing 製程 ODF製程 二切製程 F

2、I製程UV wavelength=185nm =254nm SubstrateOrganic substanceO2 O + O，O + O2 O3SubstrateOrganic substanceCHUsing UV =185nm to break down the molecular bonding of O2 (O2 O+O) ，the single Oxygen(O) combines the double Oxygen(O2) to become Ozone(O3),and using UV =254nmto break down the molecular of O3 to be

3、come O2 and O.O3 O2 + OUsing UV =254nm to break down the molecular bonding of the organic on substrate surface,and make it be activation.UV =254nmOOOOOOOOOOOOOO玻璃表面之有機性污染源C(碳) H(氫)化合物與O單氧分子結合為H2O與CO2、CO、NO2等揮發性物質揮發性物質經排氣排出於大氣中，玻璃表面因此潔淨10mmUV wavelength=185nm =254nm UV wavelength=185nm =254nm UV wave

4、length=185nm =254nm SubstrateSubstrateAnilox RollAPR PlateSubstrate Flow wayPI Ink dropping directionDoctor RollPrinting RollerAnilox Roll: Cr coating on surfaceAnilox Roll 決定PI膜厚控制與PI UniformityPre-cure N2 purge and leveling ovenR1CCCCOOOOHOOHNHR2NHOCCOOCCOR1OR2NPolyamic酸PolyimidePolyamic acid Coat

5、ing HeatingPolyimide filmnnRubbing RollerRubbing ClothSubstrate Flow direction貼布挑種子AGING呼氣像檢查投入生產Cotton clothPI製程 Rubbing 製程 ODF製程 二切製程 FI製程The Rubbing Density(L) 12(VrnNLLn:Ro ll迴轉數r:Roll半徑V:基板通過速度N:通過回數+:正方向移動 -:負方向移動Defect mode related to Alignment Process1. PI spot2. PI mura3. Rubbing scratch (R

6、ubbing Suji)4. BM Light leakage5. Reverse domain6. View angle issue7. Gray level issue8. Image sticking虛線箭頭到實線箭尾就是視角方位PI製程 Rubbing 製程 ODF製程 二切製程 FI製程Cleaner Section Unit: (1) ARC (2) ARC OvenARC 製程原理製程原理:利用IPA水溶液,高壓水洗,高壓空氣混合水洗,超音波共振水洗將基板表面髒污及毛屑, Particle清洗乾淨。再利用風刀與遠紅外線乾處理裝置將基板上的水氣去除後以利後續組立工程作業。Clean

7、er 流程圖流程圖Equipment Function / Cleaner Section UnitAir knifeIPADI waterShowerCJ+MSshower出口Conveyor TURN TABLEBackBrushLDNeutralShower+HPMJARC Oven 製程目的製程目的:各各Chamber構成及功能構成及功能製程原理製程原理:為防止產品產生水氣殘留為防止產品產生水氣殘留, ,故需利用故需利用OVENOVEN高溫環境將其去除高溫環境將其去除, ,使之成為乾燥的使之成為乾燥的基板基板 , ,使各製程不會因水氣造成產品報廢或任何使各製程不會因水氣造成產品報廢或任

8、何Defect.Defect.利用遠紅外線加熱方式快速升溫至製程溫度利用遠紅外線加熱方式快速升溫至製程溫度,去除殘留於去除殘留於PI film之水氣之水氣受渡部爐體部冷卻部Seal Group Unit: (1) Seal Dispenser (2) Seal Inspection製程目的製程目的 塗佈CF and TFT基板組立時的封著劑製程原理製程原理 使用Laser制御塗布時的Gap,並利用高精度之壓力控制閥將高黏度之Sealant穩定且精確的塗布於玻璃基板上 Gap塗布速度塗布速度SealNozzle壓力壓力(N2)Seal Dispenser製程目的製程目的 在Seal外緣適當位置點

9、膠，做為和TFT基板導通用電氣訊號通路製程目的與原理製程目的與原理 使用Laser制御塗布時的Gap,並利用高精度之壓力控制閥將高黏度之Au Seal穩定且精確的塗布於玻璃基板上 GapAu SealNozzle壓力壓力(N2)Transfer DispenserLC DispenserVacuum Alignment ChamberUV CuringMis-AlignmentVisual InspectionBFBFconveyorODF Section LayoutVCRODF Group Unit: (1) LC Dispenser (2) Vacuum Aligner (3) UV C

10、ure (4) Mis-alignment (5) Visual InspectionFab3LC dropX-Y StageDispenserLC Dropping HeadLC dispensingXYVisual inspectionFab3Vacuum AlignerUV cureLC dropMis-AlignmentSeal ovenSpot UV SourceWeight Balance: to cancel the weight of stage and ES chuckG-ESC: to hold glasses in vacuumX-Y- Table (U,V,W alig

11、ned)Align CCD CameraLinear GuideServo MotorBellowsChamberO-ringFrameCF TurnoverVacuum AlignmentSpot UVVacuum ChamberXYAir outUV Curing UV Light UV MaskVisual inspectionFab3Vacuum AlignerUV cureLC dropMis-AlignmentSeal ovenCFCF基板基板組立基板組立基板熱風熱風TFTTFT基板基板熱風加熱熱風加熱Seal PatternSeal Pattern2nd cutBurr checkFab32nd Bevel2nd Cut cleaner割輪行進方向割輪行進方向刀輪刀輪欲斷裂部位欲斷裂部位已切割之缺口已切割之缺口