氮化镓材料之低阻值欧姆接触Low

1、E TCSCiLow-Resistance Ohmic Contacts to GaNi t ?NtK-nDnsSCiA hg/?TiHb nSCiA C 7.4x10-5 cm 2Cgh/iHb p SCiA C1.02x10-2cm 2 CrSAiAoGABSTRACTIn this study, low-resistance ohmic contacts to GaN have been developed. A very thin Ti/Al bilayer metal film was prepared to form low-resistance ohmic contact on

2、n-type GaN film. The lowest value for the specific contact resistivity of 7.4x10-5 cm2 was obtained. In addition, low-resistance ohmic contacts to p-GaN have been developed by oxidizing Ni/Au bilayer metal film. The lowest value for the specific contact resistivity of 1.02x10-2 cm2 was obtained.Keyw

3、ord: GaN, ohmic contact, LED495ETCeA S (GaN)asGALbidpgGoGbdAiHoGCSAnSAbtDnCGTi?A l b n SibosAGaN MOPEb c-face sapphire C TMG M NH3 Ga M N CSi2H6 h n ICGaN1050JCSiGaN hp 2.5gmCNl 7x1017cm-3Av 250 cm2/V-s?CbJ GaN iJeATCA? CE?H3O biCA wb HCl:H2O(1:1) G 30AMhlCi E-gun Cb 3x10-6 Torrl Ti/Al?250A / 1000A?

4、CLift-off swcA TLMiSxCp 2-1gapCpiHtPcCoAnsSw tv x C b200gm?A 5?10?15?25?35?45gm?Cb lift-offsamplebTA C2-1.TLM ?eA n-type Ti/AlI-VSp2-2?CSampleb 600JM 900J30CSeLySAM heiSCAo 600J900JpA oiTi/Al bPCbPiHoPGC2-3 Ti/Al SxtC 30 CbS eSx2.35x10-3 cm2?A oHp(7.4x10-5cm2 b 600 )C2-2 Ti/AlI-VS496ETC2-3 Ti/Al SPt

5、2-5 Ti/Al(250A/1000A)|b 600J30YyS2-4 b 600JSx2-5 Ti/Al(250A/1000A)|b 600Cb 3030 ySCiHMplc 7.4x10-5cm2?CiPoAI-VSb 150K 450K GtCPCAiHyyh Ti/Al CSxizyDAzb GaNn-type GaN hMb GaN M TiyCTiN hCGaN hyyzLA TiN hCAHyC3-1 Ni/Au | bP y-Y2-4 600 JSxPY497ETCTNi/Au bp ?Si3-1 Ni/Au?400A/500A?bI-VSuCiHbSeNi/Au b-10V

6、10VAeySAMhi SC Ni/Au bbuCPGCb 70010 ioCSx 1.02x10-2 cm2?C(a)(b)3-2 Ni/AuAES |u (a) |eA (b) ?gL 500 JAES a3-2 Ni/Au(300 A/200A)|e AES CbeSAAuNi M GaN M3-2?a?CMA b 3-2?b?A sampleb 50030 Ni i h AuCJin-Kuo Ho M co-worksNi/Au NiOCNiOa p-type bCSato et al. o Sputtering Hn NiOiH 1.3x1019cm-3A p-typeGaN CNi

7、OeyiSCHo Ni/AuiH Au/p-NiO/p-GaN CMA bsA NiOGb AuAu a p-GaN?Ap 3-2?b?CiHb Au M GaN u Ni MCisA p TEM Mv x-ray gA iHA CovTSCoresi M Moustaks b GaN AoM bGaN eCMA b M b i H vTbSCb awbtAfbnSfm CAS vAC CAba/GaN iiHP S pAvTCNi/Au b 700 10 I-Vp 3-3CyH Clog DC498ETC3-3 Ni/AubPI-VSC Ti/Al | b n ? GaNi Cb e Ti/Au a Sx2.35x10-3 cm 2AbgL 600J30 ?TA aiHoC7.4x10-5 cm2Cp Ni?Pd?Pt ?M Au | bp ? GaN iAi oCgNi/Auz1.02x10-2 cm2 ?Cm1M. E. Lin, Z. Ma, Y. H .Huang,Appl. Phys.Lett.64, 1