半导体物理与器件实验报告

1、课程实习报告hunan university题目：半导体物理与器件学生姓名：周强强学生学号：20100820225专业班级：通信二班完成日期：2012.12.22运彳丁结果截图：2.2函数v(x,r) = cos(2x/l-6zx)也是经典波动方程的解。令05兀532,请在同一坐标屮 绘出x的函数v(x,r)在不同情况下的图形。(1)69/ 二 0; (2)。= 0.25龙;血二 0.5龙;(4)69/ = 0.75兀;(5)cot = 71vi = cos 2 7t x / av2 = cos 2 7t x / av3 = cos 2 7r x / av4 = cos 2 7r x / av

2、5 = cos 2 7t x / a a = 1;-01；-0.5 7r;兀;-1.5 7t; 2?r;plot vi, v2, v3z v4, v5, x, 0z 3plotstyle - rgbcolorlz 0z 1 z|rgbcolorl, 05, 0 zrgbcolorlz 0r 05 zrgbcolor0, lr 0 zrgbcolor0z 0z 1 zaxes label ,r(/a),rz lfv(xzt),r3.27根据式(3.79),绘制出-0.2<(e-ef)<0.2ev范用内，不同温度条件下的费米狄拉克概率函数：(q)t = 200k,(b)t = 300k

3、,(c)t = 400k。：f1 = -exp咼f2 = exp血f3 = exp咼k = 0.0000861;plot flz f2, f3, x, -02, 02,plotstyle - rgbcolorlz 0, 0z rgbcolorfo, 1, 0zrgbcolorfo, 0, 1zaxeslabel -> u (e-ef) nz n ”outp6)=4.3画出（a）硅，（b）错，（c）神化镣在温度范围200/ <t<600/c内的本征载流子浓度曲线 （采用对数坐标）。a设x二罟)si = sqrt2 8 w 104 * 103s w (1000/ x / 300

4、) a3 *-1 12-i 1exp ；l0>0000861 wl000/xj jge = sqrtl04 * 6 * io37 w (1000 /x /300 ) a3 *-0.66-i -iexp ；l0>0000861# 1000 /xgaas = sqrt4 7 w 7 w 1035 * (1000 /x / 300 ) a3 w-1 42-i -|exp ；l0>0000861* 1000/ xloglogplotsif gez gaas , x# 10 / 6z 5 #plotstyle - rgbcolorlz 0, 0 zrgbcolorfo, 1, 0 zr

5、gbcolorfo, 0, 1zaxes label -> »(1000/t)wz » 本征義流子浓度 n±h(1000.t)4.46已知错的掺杂浓度为aa=3xl0l5cm"3, nd=0o画岀费米能级相对于本征费米能级的位置随温度变化(200/c <t< 600k)的曲线。nc = 1.04 w 1019; n.v. = 6 * 1019;ej =0.66;k = 8.62 *10-5;na = 1015;nd = 0;hq2plot匚tz 200z 600, axes label -> “t'u5.2。硅中有效状态密

6、度为2.8x10苗g.际10嗚严一 3/2、一 3/2设迁移率为an=1350300冷=480300丿设禁带宽带为e=a2en,且不随温度变化。画出200/c < t < 6007c范国内，本征电导率随绝对温度t变化的关系曲线。nc = 2.8 w 1019t 3/2n.v. = 1.04 w 1019300/ t 3/2“匸=1350300t -3/2300/t -3/2300pp = 480k = 8.62 * io"5;eg = 1.12;n = ni；p = n±e = 1.6 wlo"19;o = e w w n + pp w p);plot

7、. tz 200z 600, axes label -> ,rt,rz ,ran6.34 n型硅样品的掺杂浓度为= io16c/3 ,产生的过剩载流子的浓度为8pm = 1014exp(-3；/ io-4)cm'3 o在os兀54x10“范围内，绘出£巧一e巾随兀变化的函 数。-x<5px = 10 expl10*nd = 1016;n± = 1.5 * io10;n0 = nd;n±2po =；nokt = 0.0259;f = kt *po + <5pxx, 0, 4 io"4 # axes label -> ,rx,

8、r,£fi-£fp7.4均匀掺杂的gaas “i结，其掺杂浓度为他=5x10%加巳=5x10"c严。画出200/c <t< 500k温度区间内，内建电势差随温度变化的曲线。nd = 5*1016;na = 5 * 1018 ;nc = 4.7 * 1017；n-v- = 7*1018; k = 138 *10-23; e = 1.6 10-19;e 寸=1-42;k tvbi =eplot vs t, 200, 500 , axes label -> 'tj lfvbin8.3 t = 300k,理想硅结的少子寿命分别为©0 =

9、 100，% "os。n区的掺杂浓度为nd=cm绘制出当他的范围是10l5</v6/<1018cm-3r,空间电荷区内空穴电流占总电流的比例随他 变化的曲线图（采用对数坐标）。ln233:= so = 10-6； rpo = io-7； g = 1016;d= = 25;b = 10;plotstyle - rgbcolor0, lz 0zaxes label -> “njj ”“1.00f0.300.205 x io】' ixlo165x10161x10175xl0r lxlo189.10金与掺杂浓度为n(f=0i6cm-3 mn型硅棊础形成肖特棊二极管。

10、简耍说明肖特皋势垒降 低现象。(d)绘出肖特基势垒降低值v。与反偏电压在0 5 « 5 50v时的图形；如=51;x = 4.01;nc = 2 8 wlo19;nd = 1016;es = 117 * 885 wlo-14; e = 1.6 * 10"19;如c = 0m - x ；如.=0 0259 log ;vbi = 0bc - 0r-；e * naei = * xp.;jplot叭w, 0, 50z axes label -> 'w jw(b)绘出jst (vr) / jst (匕=0)与反偏电压在0 5匕5 50v时的图形。dn = 5.1; x

11、= 4.01; nc = 2.8 wlo19; nd = 1016; e£ = 117 * 885 *10'14; e = 1 6 簣 io-19;rnc i0bc = 0m - x ； 0r. = 0 - 0259 log ;lnd jvbi =如 c - 0r.；e * ndei = w xr. ;|ad =e hr el4 7r * e52 w vbie * ndee2 =* nd* xra；k = 1.38 # io"23;t = 300;plot匚%，0, 50, axes label -> ,fvr n (vr)/jst (=0) n 1厶込t（璟

12、=°）实验源代码（基于mathematica7.0）:2.2vl=cos 2 7c x/九-0;v2=cos 2 7c x/ x一 0.5 7c;v3=cos 2 7c x/入-7c；v4=cos 2 7c x/ x-15 7t；v5=cos 2 7c x/九-2 7c；九=1;plot v1,v2zv3zv4,v5z x,0,3,plot styled rgbcolor 1 z 0,1 zrgbcolor1z 05,0,rgbcolor1,0,0.5,rgbcolor0,1,0,rgbcolor0 z 0 z1,axeslabeln (/九)nz nv(x,t) *'3.2

13、7fl = 1/(1+exp x/(k * 200);f2 = 1/(1+exp x/(k * 300);f3 = 1/(1+exp x/(k * 400); k=0.0000861;plot f1zf2zf3,xz-0.2,0.2,plotstyle>rgbcolor 1,0,0,rgbcolor0,1,0,rgbcolor0,0,1,axeslabeln (e-ef) " , ” *'4.3(*lgx=1000/t*)si =sqrt28 * 1.04 * 1038* (1000/ x /300 )a3 * exp-1.12 /(0.0000861*1000/x);

14、ge =sqrt 1.04 * 6 * 1037* (1000 /x /300 ) a3 * exp-0 66/ (0.0000861* 1000 /x);gaas =sqrt 4.7 * 7 * 1035* (1000 /x /300 ) a3 * exp -1.42/ (0.00 00861* 1000/ x);loglogplotsi,ge,gaas,x,10/6,5zplotstylergbcolor 1,0,0,rgbcolor0,1,0,rgbcolor0,0z1,axeslabel->n (1000/t) ” j本征载流子浓度4.46nc=1.04 * 1019;nv=6

15、* 1019;eg=0.66;k =8.62 *10-5;na=1015;nd=0;n±=t 3爲expni2p0=(na-nd)/2+ f=k * t * logpo/n±plotf,t,200,600, axeslabel->nt! n n5.20nc=2.8 * 1019 (t/300)372nv= 1.04 * 1019 (t/300)372 ; |ln=1350 (t/300)_3/2 ;|lp = 480 (t/300)_3/2 ;eg=l12；n=n±p=n±；e=1.6 *10-19;a=e* (|xn * n + |ip * p)

16、;plot6ta200, 600, axeslabel->ntnz nanj6.34 8px = 1014 exp-x/10"4;nd=1016；n±=1.5 * io10;n0= nd;p0=subscriptn, i 2/n0;kt=0.0259;f=kt * log (p0+ 8px) /n±plotfz x,0,4 * 10-4, axeslabel ->,x, hefi-efpn7.4nd=5*1016;na=5 *1018;nc=4.7 * 1017;nv=7*1018;k = 1.38 *10-23; e = 1 6 * 10-19;eg

17、=1.42;expeg /300a0.0259'n±=vbi= (k * t) /e log (na nd) /subscript n, i2;pio vbi, tz200,500 , axeslabel->nth, ,vbin8.3tn0=10"6;tp0=10-7； nd=1016;dn=25; b=10;f=(l/nd)/d/nd+1/naloglogplot f, naz 1015z 1018zplot style> rgbcolor 0,1,0 ,axeslabel-> nnan , 11 n 19.10a<|)m=5 1;%=4.01;nc=2.8*1019;nd=1016;es=11.7 * 8.85 *10-14; e=1.6 * 10-19;(|)n=0 0259 log nc/nd;vbi=(|)b0-(|)n;2s vbi vrexn=ei=(e * nd) /