ZnO薄膜论文：氧化锌基薄膜晶体管的磁控溅射法制备及其性能研究

1、ZnO薄膜论文：氧化锌基薄膜晶体管的磁控溅射法制备及其性能研究【中文摘要】ZnO是一种新型的直接带隙宽禁带-族化合物半导体材料,室温下的禁带宽度为3.37 eV,其激子结合能高达60 meV,可以实现室温下的高效激子复合发光,是一种理想的短波长发光器件材料。目前,以ZnO基薄膜为有源沟道层的薄膜晶体管,其迁移率比最常用的硅薄膜晶体管高一个数量级以上,而且对可见光的透明度大于80%,是最有希望的下一代薄膜晶体管。本实验采用射频磁控溅射法系统研究了不同制备参数对ZnO薄膜的影响,衬底温度对镓掺杂氧化锌薄膜(GZO)的光电性能的影响,以及GZO薄膜作为有源层的ZnO基薄膜晶体管特性等方面进行了研究,

2、研究的主要内容包括以下三个方面：(1)采用超高真空磁控溅射设备首先在不同衬底温度、溅射功率、氧氩比、溅射气压条件下在玻璃衬底上沉积了ZnO薄膜,并利用X射线衍射仪,扫描电镜,原子力显微镜,紫外-可见分光光度计,荧光分光光度仪对样品进行了测量。找出制备结构缺陷密度小,晶粒趋向性好的最佳生长工艺条件：衬底温度650,溅射功率为120 W,氧氩比为40：20,溅射气压为2.5 Pa,在此条件下生长的ZnO薄膜结晶质量高,c轴取向好,并且在可见光区具有较高透过率,可以制备薄膜晶体管。(2)采用超高真空磁控溅射设备在不同衬底温度的玻璃衬底上沉积了掺镓3%的ZnO薄膜,研究了衬底温度对该薄膜的透过率和电学

3、特性的影响。制备薄膜在可见光的透过率达到了80%以上,其中高于650制备的掺镓3%的ZnO薄膜透过率低于80%是由于衬底玻璃开始融化导致的,薄膜的导电性能随着衬底温度的升高而增强,主要是因为薄膜的结晶质量提高引起的。(3)我们用Si衬底作为底电极,二氧化钛和氧化镓的交替多层膜作为绝缘层,掺镓3%的ZnO薄膜作为有源层,制备了ZnO薄膜晶体管,探索器件的性能。【英文摘要】Zinc oxide (ZnO) is a novel-compound semiconductor with a wide band gap of 3.7 eV. ZnO is an ideal short wavelengt

4、h optoelectronic devices due to its high binding energy of 60 meV and strong excitonic emission at room temperature. At present, transistor with ZnO thin film as an active channel layer is the most favorite transistor because of its high optical transmission (85%) in visible range and high mobility

5、(orders of magnitude higher than common silicon thin film transistor).In this work, we studied the effects of experimental conditions on the properties of ZnO films deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effects of the growth temperature on Ga-doped ZnO films

6、, and the temperature on transistor with ZnO thin film as an active channel layer were studied. The main contents are as follows:(1) ZnO thin films was deposited on glass substrates by radio frequency (RF) magnetron sputtering technique with different experimental conditions, such as:substrate tempe

7、rature, RF power, gas ratio of Ar to O2 and pressure. The X-ray diffractometery, scanning electron microscopy, atomic force microscopy techniques were used to investigate the lowest defect density and grain fabulous. It was found that the film had high crystal quality and grain fabulous when the tem

8、perature was 650, the power was 120 W, the ratio of Ar:02=40:20 and the pressure was 1 Pa. Whats more, the film had high transmission (85%), which is a perfect property for film transistor.(2) The Ga doped ZnO (3%) thin films were deposited on glass substrates at different temperatures. The effects

9、of temperature on the properties of the films were studied. The results showed that all the films had high transmission (85%), expect for the one deposited at 800, which may be caused by the melting of the glass, Meanwhile we found that, with the increase of the growth temperature increasing, the re

10、sistance of the film became lager.(3) The ZnO based transistors were prepared with Si as the bottom electrode, multilayer thin film of TiO2 and Ga2O3 was used as the gate dielectric, Ga doped ZnO as the active channel layer. The properties of the transistors were studied and discussed.【关键词】ZnO薄膜 磁控溅

11、射 薄膜晶体管 透射率【英文关键词】ZnO thin film magnetron sputtering transistor transmission【备注】索购全文在线加好友：1.3.9.9.3.8848 同时提供论文写作一对一指导和论文发表委托服务【目录】氧化锌基薄膜晶体管的磁控溅射法制备及其性能研究摘要2-3Abstract3引言6-8第一章 绪论8-151.1 ZnO的结构和性能8-91.1.1 ZnO的晶体结构81.1.2 ZnO的电学性能8-91.1.3 ZnO的光学性能91.2 ZnO的应用9-111.2.1 太阳能电池9-101.2.2 ZnO发光器件101.2.3 气敏器件

12、10-111.2.4 压敏器件111.2.5 紫外探测器111.3 ZnO薄膜的制备方法11-141.3.1 脉冲激光沉积121.3.2 分子束外延121.3.3 溶胶-凝胶12-131.3.4 金属有机化学气相沉积131.3.5 磁控溅射13-141.4 本论文研究的主要内容14-15第二章 ZnO薄膜的制备与表征15-262.1 磁控溅射法制备ZnO薄膜的特点和原理15-162.1.1 磁控溅射的原理15-162.1.2 射频磁控溅射的原理162.2 实验设备16-182.3 样品制备18-202.3.1 基片清洗182.3.2 薄膜制备182.3.3 薄膜生长18-192.3.4 透明薄

13、膜晶体管的制备19-202.4 ZnO薄膜的发光机理20-212.4.1 绿光的发光机理212.4.2 其他发光机理212.5 ZnO薄膜的表征21-262.5.1 X射线衍射(XRD)21-222.5.2 原子力显微镜(AFM)22-232.5.3 光致发光谱(PL)23-242.5.4 紫外-可见分光光度计(UV-VIS)24-26第三章 溅射参数对ZnO薄膜的影响26-473.1 衬底温度对薄膜结构和光学性能的影响26-303.1.1 衬底温度对薄膜晶体特性的影响26-273.1.2 衬底温度对薄膜表面形貌27-283.1.3 衬底温度对薄膜透过率的影响28-303.1.4 本节小结30

14、3.2 溅射功率对薄膜结构和光学性能的影响30-373.2.1 溅射功率对溅射速率的影响30-313.2.2 溅射功率对薄膜晶体特性的影响31-323.2.3 溅射功率对薄膜表面形貌的影响32-333.2.4 溅射功率对薄膜光学性能的影响33-373.2.5 本节小结373.3 氧氩比对磁控溅射制备ZnO薄膜特性的影响37-413.3.1 氧氩比对薄膜厚度的影响37-383.3.2 氧氩比对薄膜透过率的影响38-393.3.3 氧氩比对薄膜荧光光谱的影响39-403.3.4 本节小结40-413.4 溅射气压对薄膜结构和光学性能的影响41-473.4.1 溅射气压对薄膜厚度的影响41-423.4.2 溅射气压对薄膜结晶性能的影响42-433.4.3 溅射气压对薄膜表面形貌的影响43-443.4.4 溅射气压对薄膜透过率的影响44-463.4.5 本节小结46-47第四章 衬底温度对掺镓ZnO和ZnO基薄膜晶体管的影响47-