超大容量双电层电容器主要技术参数的测试

1、研究与试制超大容量双电层电容器主要技术参数的测试王国庆1,2,林忠富2,左伟忠2,王树学2(11东北传感技术研究所,黑龙江哈尔滨150001;21大庆华隆电子有限公司,黑龙江大庆163316摘要:介绍了利用时间常数法、恒流充电法及恒流放电法测静电容量,详细列出了不同容量值时的测试参数。三种测试方法比较表明:时间常数法简单实用,恒流放电法和恒流充电法准确。同时介绍了等效串联电阻及漏电流的测试方法。关键词:双电层电容器;静电容量;等效串联电阻;漏电流;测试方法中图分类号:TM53;TM934122文献标识码:A文章编号:100122028(2000022*超大容量双电层电容器(以下简称电容器是20

2、世纪70年代末发展起来的新型电子元件,80年代初在日本迅速实现了商品化。作为一种储能元件,由于具有体积小、容量大、过电压不击穿、使用寿命长等特点,广泛应用于存储器的后备电源、太阳能电池的二次电源及瞬间电压波动情况下的辅助电源。由于该类电容器在国际及国内没有一个统一的技术标准,有些科技人员在应用时对它的测量方法不很了解。笔者根据美国军用标准、日本各公司测量标准以及笔者多年来从事该类电容器研究及生产的经验,将该类电容器的测试方法,特别是静电容量的几种测试方法作些介绍。1静电容量的测试该类电容器由于具有超大的静电容量,特别是相对较大的等效串联电阻,因此用常规的测试方法很难测出其有效容量。目前,各生产

3、厂商的测试方法也不尽相同,本文介绍三种测试方法。111时间常数法11111测量原理电容器恒压充电特性遵循下列公式:V C=E1-exp(-t R C式中:V C为电容器两端电压;E为恒定充电电源电压;t为充电时间。当t=R C时:V C=E(1-e-1=01632E因此,V C从001632E时,电容器的静电容量可用以下公式计算:C=t R(1测试原理见图1。11112测试条件充电电压为电容器的额定工作电压。时间可用秒表记录,从开关闭合对电容器充电开始,到电容器两端的电压为01632倍的充电电压为止。取样电阻依电容器容量值而不同,下面是几种容量值时的取样电阻值。01047F以下:R0=1000

4、8011F:R0=5108 0122F:R0=20080147F以上:R0=1008测试前应将电容器短路放电30m in以上。例如:测试5V 0122F电容器,按上述测试原理及条件进行,用测得的时间除以2008,即为该电容器的实际容量。该电容器容差为-20%+80%,测得的时间为3579s。E为直流稳压电源;R0为取样电阻;C为被测电容器;V为直流电压表;K为开关图1时间常数法容量测试原理112恒流充电法11211测试原理 对任何电容器电容量的计算都遵循公式:C=Q V CC=it V C d t当充电电流i为一定值,电容器电压由0V C时的时间可测,则C=I t V C(2式中:I为充电电流

5、;V C为电容器两端的电压;t为电容器两端电压由0V C时所用的时间。测试原理见图2。图2恒流充电法电容量测试原理收稿日期:1999209230修回日期:1999211224作者简介:王国庆(1964-,男,山东省沂南人,大庆华隆电子有限公司总工程师兼超大容量电容器事业部经理,主要从事双电层电容器生产和开发工作。在本测试方法中,用函数记录仪记录电容器两端的电压及充电时间,显示t 2V 关系曲线如图3。 图3电容器恒流充电t 2V 曲线从图3看出,在电容器充电的瞬间产生一个电压V 1,这是由于该电容器有一个相对较大的等效串联电阻而产生的,因此,在计算电容量时V C =V 2-V 1。11212测

6、试条件测试前将电容器短路放电30m in 以上。V C 应等于额定工作电压。充电电流根据容量不同而不同,下面给出几种不同容量电容器的充电电流,供参考。01047F 以下:I 0=5mA 011F :I 0=10mA 0122、0147F:I 0=50mA110F :I 0=100mA例如:测试5V 0122F 电容器,充电电流0105A ,在记录仪的记录纸上取V C =5V 时的时间t ,合格品应在1840s 之间,用这个时间乘以0105A 除以5V ,即为该电容器的实际电容量。 113恒流放电法11311测试原理同恒流充电法一样,当电容器以一个恒定的电流I 放电时,电容器的容量C 与电容器某

7、一时段的电压降的乘积,等于电容器这一时段所放的电量。C V =Q =I t C =I t V(3式中:I 为恒定放电电流;t 为电容器由V 1下降至V 2时所需时间;V 为t 时段的电压降,即V =V 1-V 2。测量原理见图4。 A 为直流电流表图4恒流放电法测试原理电容器测量过程见图5。 t s 为电容器恒压充电时间图5充放电过程曲线11312测试条件被测电容器在恒流放电前应恒压充电30m in ,充电电压为电容器的额定工作电压。V 1-V 2=015V ,V 1约取电容器额定电压1 2,即12V R ,如额定电压V R 为515V 的电容器,V1取215V 。放电电流应取1mA F 为宜

8、,放电电流越大,所测电容量将越小。一般情况下,将该电容器短路大电流放电后,电压将有一定量的恢复。114几点说明这三种电容量测试方法所测的电容量有所不同。按本文的测试条件,时间常数法与恒流充电法接近,而恒流放电法比时间常数法所测的电容量大113116倍。目前,市场所售电容器一般是作为低功耗器件的备用电源使用的,因此,恒流放电法与实际应用相近,对应用来讲是比较准确的,但测试时间长,不如时间常数法简便。因此,通常采用时间常数法或恒流充电法。恒流充电法是我们在科研过程中经常使用的,充电过程比较直观。日本N EC 公司采用时间常数法,美国军用标准也采用此法进行测试。日本松下公司采用恒流放电法。2等效串联

9、电阻的测试211测试原理双电层电容器的等效电路如图6。C 0为等效的理想电容器;R s 为等效串联电阻(内阻;R j 为绝缘电阻图6双电层电容器等效电路当电容器被施加交流电流时,理想电容器C 0为短路状态,而在等效串联电阻R s 上产生一个压降,即V R s =V C ,当交流电流为一定值时,电容器的等效串联电阻可由(4式计算:R s =V C I(4测试原理见图7。C 为被测电容器;V 为交流电压表;A 为交流电流表图7等效串联电阻测试原理212测试条件环境温度:(25±5。信号频率:(1000±100H z 。回路内交流电流:(10±1mA 。3漏电流的测试3

10、11测试原理由于该电容器静电容量非常大,因此,规定在该电容器上施加工作电压30m in 后所测得的电流为该电容器的漏电流,其电流I A <3×10-4C F V V (C 为电容器的标称静电容量;V 为电容器的额定工作电压值。(下转第21页多年来虽在各方面取得了可喜进展,但要真正实现FFET存储器的实用化,还有一系列问题需要研究解决,如:铁电体 半导体界面状态的控制、退极化、漏电流与保持力及它们之间的相互关系等问题。这些问题之间相互关联,互为因果,所以要从根本上解决这些问题,还必须从铁电薄膜材料的选择、材料的优化组合、制备工艺的优化、缓冲层的选择及优化组合、电极材料的选择、FF

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22、件测试温度:(25+5。施加电压为电容器的工作电压,且在测试过程中电源电压波动不超过±0101V。充电时间:110F以下为30m in,超过110F为60m in。取样电阻的选取:01047F以下:100080110147F:1008110F以上:1084结束语由于该类电容器的静电容量非常大,无论是哪种方法都不一定测得其准确的电容量,因此,容差规定的范围也较大,通常为-20%+80%。对等效串联电阻和漏电流测试,各厂商的方法是一致的。随着该类电容器应用领域的扩大,检测标准也会在我国得到统一。参考文献:1M ilitary Specificati on DOD-C-29501S1198

23、612Q UN T KN1211996,电子部四十九所1CSC-4B型系列超大容量电容器S13N EC1E lectric Double L ayer Capacito rsZ1199314松下电器1E lectric Double L ayer Capacito rs(Go ld Capacito rZ119901(编辑:伍大志better sensibility and consistency can be acquired w hen the temperature and th ickness being accurately contro lled in p rocess1(4 re

24、fs1Key words:SnO2;gas senso rs;th ick fil m techno logy;fil m th ickness;heat treatm ent;sensibilityPerfor mance test of super double layer capac itors1WAN G Guo2qing1,2,L I N Zhong2fu2,Z UO W ei2zhong2,WAN G Shu2xue2(11 N o rtheast Ch ina Institute of Sensing T echno logy,H aerbin H eilongjiang1500

25、01;21H ualong E lectronics Co1,L td1,D aqing H eilongjiang1633161EL ECT RON IC COM PON EN T S&M A T ER IA L S(Ch ina,V o l119,N o12,P115216,21(A p r120001In Ch inese1T h ree m ethods fo r testing static capacitance are p resented1T hey are ti m e constant m ethod,constant current charge m ethod

26、and constant current discharge m ethods1T he first one is si m p ler and the o ther tw o are mo re accurate1T he m ethods fo r testing ESR and leakage current are also p resented1(4refs1Key words:double layer capacito rs;static capacitance;ESR;leakage current;test m ethodsD evelop m en t of auto mat

27、ic sorti ng mach i nes for f il m capac itors made i n Ch i na1CH EN D e2hong(Shanghai SiriE lectronic System Co1,L td1,Shanghai2000821EL ECT RON IC COM PON EN T S&M A T ER IA L S(Ch ina,V o l119,N o12,P117218(A p r120001In Ch inese1Ch inese m ade fil m capacito rs so rting m ach ines have been

28、develop ing w ith the developm ent of the capacito r techno logy,from M odel XF10,XF10B,XF10D to XF10E1T he new generati on w ill be vertical caterp illar track style1(no refs1Key words:fil m capacito rs;autom atic so rting m ach ines;test frequency;capacito r param eters1The ferroelectr ic f ield e

29、ffect tran sistor1WAN G H ua1,2,YU Jun1,ZHOU W en2li1,WAN G Yun2bo1,X IE J i2fan1,ZHOU Dong2 xiang1,ZHU L i2li1(11D epartm ent of E lectronic Science&T echno logy,H uazhong U niversity of Science&T echno logy,W uhan H ubei430074;21D epartm ent of E lectronic&Comm unicati on,Guilin Instit

30、ute of E lectronic techno logy,Guilin Guangxi5410001EL ECT RON IC COM PON EN T S&M A T ER IA L S(Ch ina,V o l119,N o12,P119221(A p r120001In Ch inese1T he structure,m emo ry p rinci p le and m anufacture techno logy of ferroelectric field effect transisto rs(FFETare p resented1T he i m p rovem e

31、nt of FFET structure design and the app licati on of ferroelectric fil m on FFET are review ed1T he effects of ferroelectric fil m,transiti on layer,structure and fil m fo r m ati on techno logy on the m emo ry characteristic are discussed1T he comm ents on p resent study on FFET and the exiting p r

32、oblem s are also given1(19refs1Key words:ferroelectric th in fil m;ferroelectric field effect transisto rs;m emo ry characteristicThe-st ate-of-the-art of h igh te m perature superconductor M C M1DU X iao2song,Yang Bangchao(U niversity of E lectronic Science and T echno logy of Ch ina,Chengdu Sichua

33、n6100541EL ECT RON IC COM PON EN T S&M A T ER IA L S(Ch ina,V o l119,N o12,P122223,33(A p r120001In Ch inese1H igh temperature superconducto r(H T SM C M is a p rom ising techno logy and it is regarded as the greatest innovati on after the discovery of h igh temperature superconductivity1T he co

34、m binati on of H T S and M C M is a good app roach to break th rough the interconnect bo ttleneck1H T S M C M m eets the requirem ents of h igh speed,compactness and w ide bandw idth of future electronics1 T he study ach ievem ents of H T S M C M are review ed,the existing technical p roblem s summ

35、arized,and the perspective of th is new techno logy is p resented1(12refs1Key words:M C M;h igh temperature superconductivity;interconnecti onSolder jo i n t i n electron ic packages and its reli ability1WAN G Q ian1,WAN G Gang2qiang1,Sh i2W ei R icky L EE2,GEN G Zh i2ting1, HUAN G L e1,TAN G X iang

36、2yun1,M a Ju2sheng1(11D epartm ent of M aterials Science and T echno logy,T singhua U niversity, Beijing100084;21D epartm ent of M echanical Engineering,Hong Kong U niversity of Science&T echno logy Hong Kong Ch ina1 EL ECT RON IC COM PON EN T S&M A T ER IA L S(Ch ina,V o l119,N o12,P124226(

37、A p r120001In Ch inese1Failure of a single so lder j o int in an electronic package m ay cause the overall failure of the device,even the w ho le system1Failures of so lder j o ints usually result from the grow th of creep fatigue crack under ther m al cycling1T he research of so lder j o ints and i

38、ts reliability is introduced,w ith respects of so lder j o int m icro structure,failure analysis,reliability fo recast,etc(12refs1Key words:electronic packages;so lder j o ints;reliabilityI m prove m en t of pulse volt age ag i ng technology for A l electrolytic capac itors by orthogonal test1WAN G Yu2hua(Zhuhai Gelixinyuang E lectronic Component Facto ry,Zhuhai Guangdong5190201EL ECT RON I