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1、1第二章第二章 ULSI工艺总汇工艺总汇 23456789101112Temasek PolytechnicCMOS13CMOSStarting with a silicon waferCross Section of the Silicon WaferMagnifying the Cross Section14CMOSn/p-well FormationGrow Thin OxideDeposit NitrideDeposit Resistsilicon substrateUV ExposureDevelop ResistEtch Nitriden-well ImplantRemove Re

2、sist15CMOSn/p-well Formationsilicon substrateGrow Oxide (n-well)Remove Nitridep-well ImplantRemove OxideTwin-well Drive-inp-welln-wellRemove Drive-In Oxide16silicon substratep-welln-wellCMOSLOCOS IsolationGrow Thin OxideDeposit NitrideDeposit ResistUV ExposureDevelop ResistEtch NitrideRemove Resist1

3、7CMOSLOCOS Isolationsilicon substratep-welln-wellDeposit ResistUV ExposureDevelop ResistField Implant BRemove ResistGrow Field OxideFoxRemove NitrideRemove Oxide18silicon substratep-welln-wellGrow Screen OxideCMOSTransistor FabricationVt ImplantDeposit ResistUV ExposureDevelop ResistPunchthrough Imp

4、lantRemove ResistRemove OxideFox19silicon substratep-welln-wellGrow Gate OxideCMOSTransistor FabricationDeposit PolySiPolySi ImplantpolySipolySiDeposit ResistUV ExposureDevelop ResistEtch PolySiRemove ResistFox20silicon substratep-welln-wellCMOSTransistor FabricationDeposit Thin OxideDeposit ResistU

5、V ExposureDevelop Resistn-LDD ImplantRemove ResistFoxpolySipolySi21silicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp-LDD ImplantRemove ResistDeposit Spacer OxideEtch Spacer OxideFoxpolySipolySi22silicon substratep-welln-wellCMOSTransistor FabricationDepo

6、sit ResistUV ExposureDevelop Resistn+ S/D Implantn+n+Remove ResistFoxpolySipolySi23silicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp+ S/D Implantp+p+Remove ResistFoxpolySipolySin+n+24silicon substratep-welln-wellCMOSContacts & InterconnectsDeposit BP

7、TEOSBPTEOSBPSG ReflowPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistContact EtchbackRemove ResistFoxpolySipolySin+n+p+p+25silicon substratep-welln-wellCMOSContacts & InterconnectsDepost Metal 1Metal 1Deposit ResistUV ExposureDevelop ResistEtch Metal 1Remove ResistFoxpolySipolySip+p

8、+n+n+BPTEOS26silicon substratep-welln-wellCMOSContacts & InterconnectsDeposit IMD 1IMD1Deposit SOGSOGPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistVia EtchRemove ResistFoxpolySipolySip+p+Metal 1n+n+BPTEOS27silicon substratep-welln-wellCMOSContacts & InterconnectsDeposit Metal 2Metal 2Metal 2Deposit ResistUV ExposureDevelop ResistEtch Metal 2Remove R

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