光刻机结构与工作基本原理

1、光刻机结构与工作基本原理讲授内容 第一讲：微电子制造工艺流程（回顾） 第二讲：微电子制造装备概述光刻工艺及基本原理 第三讲：光刻机结构及工作原理(1) 第四讲：光刻机结构及工作原理(2)上讲内容：完整的IC制造工艺流程上讲内容：微电子制造装备概述加法工艺减法工艺图形转移工艺辅助工艺掺杂扩散离子注入薄膜氧化化学气相淀积溅射外延刻蚀湿法刻蚀干法刻蚀抛光及清洗化学机械平坦化清洗图形转移光刻测试及封装测试封装后道工艺扩散炉离子注入机退火炉氧化炉CVD反应炉溅射镀膜机外延设备湿法刻蚀机反应离子刻蚀机光刻机涂胶显影设备CMP抛光机硅片清洗机测试设备划片机键合机上讲内容：光刻工艺流程 光刻工艺的8个基本步骤

2、气相成底膜旋转涂胶软烘对准和曝光曝光后烘焙显影坚膜烘焙显影检查上讲内容：光刻与光刻机 对准和曝光在光刻机(Lithography Tool)内进行。 其它工艺在涂胶显影机(Track)上进行。本讲内容：光刻机结构及工作原理 光刻机简介 光刻机结构及工作原理光刻机简介* 微电子装备微电子装备 芯片设计能力芯片设计能力 芯片制造与制造设备芯片制造与制造设备 芯片测试与测试设备芯片测试与测试设备 设备是信息产业的源头：设备是信息产业的源头： 我们开发设备、设备制造芯片、芯片构成器件、器件改变世界！光刻机简介* 摩尔定律摩尔定律Intel 创始人之一摩尔1964年提出，大约每隔12个月：1). 芯片能

3、力增加一倍、芯片价格降低一倍；2). 广大用户的福音、行业人员的噩梦。芯片集成密度不断提升、光刻分辨率的不断提升！* 2006国际半导体技术路线图国际半导体技术路线图(ITRS)原理研究原理研究样机研发样机研发产品量产产品量产持续改进持续改进光刻机简介* 光刻机的作用光刻机的作用光刻机是微电子装备的龙头光刻机是微电子装备的龙头技术难度最高单台成本最大决定集成密度光刻机是源头中的龙头！光刻机简介光刻工艺流程光刻机简介Lithography = Transfer the pattern of circuitry from a mask onto a wafer.* 对准曝光工作流程对准曝光工作流程

4、光刻机简介光刻机简介光刻机简介Development of lithography system* 光刻机发展路线图光刻机发展路线图1光刻机简介* 光刻机发展路线图光刻机发展路线图2光刻机简介光刻机三巨头光刻机简介光刻机原理 Reticle (Mask) Wafer Light Lens PhotoresistwaferdieImage (on reticle)Image (on wafer)Cell光刻机原理硅片(wafer)单晶硅芯棒直径可达300mm,长度可达30feet (9m)，重量可达400kg。用金刚石锯，将芯棒切成薄圆片，即晶片(wafer)。 标准晶片尺寸和厚度为： 100m

5、m (4”) x 500m 150mm (6”) x 750 m 200mm (8”) x 1mm 300mm (12”) x 750m硅片Wafer type: SEMI JEIDADiameter： 8 inch - 200mm 12 inch 300mmNotch：Y/N Flat edge lengthClearance Round FlatSEMI = Semiconductor Equipment and Materials International JEIDA = Japan Electronic Industries Development Association光刻机重要评

6、价指标v CD Line width（线宽）v Overlay（套刻精度）v Field size（场尺寸）v Throughput（生产率）XYWphCD = Critical Dimension光刻机重要设计指标Numerical Apertureof Projection Lens0.750.50Litho. Resolution (Lines/Spaces)100nmImage Size22mm8mmMagnification-0.25Depth of Focus0.60m (130nm resolution)0.50m (100nm resolution)Projection Len

7、s(-1/4x)ReticleWaferExposure FieldScanScan22x4=882283232x4=1288x4=32XYZNAReticle pattern size88mm128mmExposure field size on wafer (max)22mm 32mmScanning speed (max) reticle stage wafer stage1000mm/s250mm/s* 光刻机光刻机 (汞灯汞灯)光刻机总体结构* 光刻机光刻机 (激光器激光器)光刻机总体结构Step and Scan System193 nm Excimer Laser SourceC

8、omputer ConsoleExposure Column(Lens)WaferReticle (Mask)光刻机总体结构自动对准系统投影物镜系统框架减振系统掩模传输系统调平调焦测量系统照明系统工件台系统掩模台系统硅片传输系统环境控制系统整机控制系统整机软件系统光刻机结构及工作原理 曝光系统 (照明系统和投影物镜) 工件台掩模台系统 自动对准系统 调焦调平测量系统 掩模传输系统 硅片传输系统 环境控制系统 整机框架及减振系统 整机控制系统 整机软件系统光刻机结构：曝光系统* 曝光系统曝光系统激光器激光器/汞灯汞灯提供光源照明系统照明系统 均匀照明掩模投影物镜投影物镜 高分辨率成像光刻机结构：

9、曝光系统* 曝光系统总体结构曝光系统总体结构光刻机结构：曝光系统* 曝光系统工作原理曝光系统工作原理M ovable lensesLight trapBS3Energy Detection UnitL4CaF2 rodPhotodiodeD O E2L5CaF2 rodVariableslitIllum ination Lens GroupCollim ator lensM 10Condensor lensFilter (or w indow )ReticleFixed lens groupsLens Z1Lens Z2Lens Z3Lens X -YLast plateN A (variab

10、le)Fixed lens groupsW aferSpot energy sensorLens im age sensor(LIS)O ptical A rrangem ent of Exposure SystemProjectionLensBeam Uniform izerBeam DeliveryFilterArF Excim er LaserSafety shutterBeam ExpanderM 1CL1 CL2L1M 2M 3M 4M 5M 6M 7BS1M 8M 9BS2Beam Steering UnitBeam Sam pling UnitL2L3Variable Atten

11、uatorLight trapPSD 1PSD 2D O E1ZoomexpanderBeam ShaperM ovable axiconFixed axiconFixed lenses光刻机结构：曝光系统* 曝光系统结构曝光系统结构1光刻机结构：曝光系统* 曝光系统结构曝光系统结构2光刻机结构：曝光系统* 曝光波长曝光波长汞灯：汞灯：g-Line (453 nm)、h-Line (405 nm)、i-Line (365 nm)准分子激光器：准分子激光器：KrF (248 nm)、ArF (193 nm)、F2 (157 nm)极紫外光源：极紫外光源：EUV (13 nm)曝光波长影响曝光波长

12、影响光源技术：光源技术：中心波长、光谱带宽、输出功率光学系统：光学系统：光学设计、光学材料、光学镀膜光刻工艺：光刻工艺：光刻胶、工艺参数光刻机结构原理：曝光系统* 汞灯光源汞灯光源光刻机结构：曝光系统* 激光器激光器中心波长193.365 nm波长带宽0.3 pm脉冲频率4000 Hz脉冲能量5 mJ输出功率20 W光刻机结构：曝光系统* 离轴照明光刻机结构：曝光系统顶部模块 (Top Modular)光刻机结构：曝光系统* 刀口狭缝Slit光刻机结构：曝光系统* 投影物镜典型的投影物镜： - 30 块镜片 - 60 个光学表面 - 0.8m 最大直径 - 500kg 重量wafer vvvv

13、vvvObjective lens reticle Condenserlens Light sourceAperturestop光刻机工作原理：成像原理Imaging Principle: Optical ProjectionImaging Principle: Fourier OpticsobjectNA = n sin iNumerical ApertureProjection LensEntrance PupilNA = Numerical Aperture = Angular Measure of Lens Size = max. Acceptance angle (at object

14、)i = max. acceptance angle (at image)(wafer)(reticle)ImageDefinition of Numerical Aperture (NA)Diffractionintensityposition0 order-1 order+1 order0+1-1-2+20+1-1-2+2+3-3sin =nlpitchIllumination of a Periodic Gratingn = order #n = 0n = -/+1n = -/+3Diffraction Ordersn = 0n = 1n = 3Reticle levelWafer le

15、velDC biasResist Zero and +1st order waveformZero and 3rd order waveformDiffraction OrdersZero order waveformAssembled imageDiffracted ImageEntrancepupil ofthe lens-10 +1-3+3Recombination of OrdersA grating diffracts the light in orders.The orders contain information about the pattern on the grating

16、.A lens can recombine the orders to form an image of the wafer.-5-7+7+5sum+First orderThird order Recombination of OrdersZero orderRecombination of OrdersImagePerfect Imagesum of the ordersAmplitudeAmplitude WaferFourier Coefficients-0.4-0.200.20.40.60.8012345678910AmplitudeOrder number-0.4-0.200.20

17、.40.60.8012345678910Order numberAmplitude-3 -1 0 +1 +3-1 0 +1 -3 +3-0.4-0.200.20.40.60.8012345678910AmplitudeOrder numberZero orderCriterion to Form an ImageOnly the zero order is not enough to form an image. (there is only a “DC level”)There must be at least two orders captured by the lens.This is

18、also known as Abbe theorem. Perfect Imagesum of the ordersDiffraction in & Recombination of OrdersThe grating (mask) transverse the light into orders.The lens captures these orders to form an image.-1+10-3+3Depth of Focus (1)Image in focus.Depth of Focus (DOF): the area near the focus plane wher

19、e the orders are near enough to give constructive interference.Assembled imageDiffracted ImageEntrancepupil ofthe lens-10 +1-3+3Depth of Focus (2)-1th Order+1th Order0th OrderDOFDOFLong wavelengthShort wavelengthResolution: The smallest printable linesNA+10-1Resolution: Coherent IlluminationRNo imag

20、ing!+1 0-1+1 0 -1sin =nlpitchpitch = lsin R = klNALithography resolution & depth of focus光刻机原理：分辨率光刻分辨率影响因素曝光波长曝光波长 l l数值孔径数值孔径 NA工艺系数工艺系数 k1R = k1lNA照明光源（减小波长l)SourceWavelength (nm)CDHg-Xe lampe-line (546 nm)g-line (436 nm)for 0.6-0.7 um line widthh-line (405 nm)i-line (365 nm)for 0.5 um and 0.

21、35 umKrF excimer laser248nmfor 0.25 um and 0.18 umArF excimer laser193nmfor 0.13 um and 0.10 umF2 laser157nmfor sub-0.10 umi-lineh-lineg-linee-line浸液式光刻（提高NA)数值孔径浸液技术lsin1nNANAKCD分辨率增强技术RET = Resolution Enhancement Technique = 分辨率增强技术分辨率增强技术 离轴照明 (方向）相移掩模 (相位)光学校正 (强度)R = k1lNA照明与掩模传统照明环形照明二极照明四极照明二

22、元掩模移相掩模光学校正Partial Coherent IlluminationOptical projection in Lithographywafer vvvvvvvObjective lens reticle Light sourcevCondenser lens Aperture stops s = partial coherence factor = effective source filling factor in the projection optics pupilBeyond the Resolution LimitNo imagingImaging!ss = fract

23、ion of pupil that is filled with zeroth orderNACoherentPartial Coherence+1 0-1+1 0 -1 +1 0 -1+1 0 -1, sBF-0.1BF+0.1BF+0.2Best FocusBF-0.2120nmBest Focus110nm120nm and 110nm Dense Lines using Binary Maskwafer-2 order-1 order+2 order+1 order0 orderreticlelenswafer-2 order-1 order+2 order+1 order0 orde

24、rreticlelenswafer-2 order-1 order+2 order+1 order0 orderreticlelensConventional Illuminationresolution limitsLinewidth = 90nm Linewidth = 65nm Linewidth = 45nmIlluminatorso u tsi ns同轴照明离轴照明Introduction to MaskMask components普通铬掩模移相掩模移相掩模 (PSM, Phase Shifting Mask)光学临近效应校正OPCOPC种类Mask版图设计设计目标版图OPC后版图实际掩模曝光图形