三星闪存芯片命名规律

1、三星闪存芯片命名规律 K9XXXXXXXX-XXXXXXX 匚，-JU,.JTT 二匚二一二 1LI一1ZJr1X311匚一_、一1r_事 riTT,Zti巴二SS-s 1234567891011121314I5161718 1. Memory(K) 2. NANDFlash:9 3. SmallClassification (SLC:SingleLevelCell,MLC:MultiLevelCell, SM:SmartMedia,S/B:SmallBlock) 1 :SLC1ChipXDCard 2 :SLC2ChipXDCard 4 :SLC4ChipXDCard A:SLC+Muxed

2、I/FChip B:MuxedI/FChip D:SLCDualSM E:SLCDUAL(S/B) F:SLCNormal G:MLCNormal H:MLCQDP J:Non-MuxedOneNand K:SLCDieStack L:MLCDDP M:MLCDSP N:SLCDSP Q:4CHIPSM R:SLC4DIESTACK(S/B) S:SLCSingleSM T:SLCSINGLE(S/B) U:2STACKMSP V:4STACKMSP W:SLC4DieStack 45.Density 12:512M 16:16M 28:128M 32:32M 40:4M 56:256M 64

3、:64M 80:8M 1G:1G 2G:2G 4G:4G 8G:8G AG:16G BG:32G CG:64G DG:128G 00:NONE 67.organization 08:x8 16:x16 8. Vcc A:1.65V3.6V B:2.7V(2.5V-2.9V) C:5.0V(4.5V-5.5V) D:2.65V(2.4V2.9V) E:2.3V-3.6V R:1.8V(1.65V-1.95V) Q:1.8V(1.7V1.95V) T:2.4V-3.0V U:2.7V-3.6V V:3.3V(3.0V-3.6V) W:2.7V5.5V,3.0V-5.5V 0:NONE 9. Mod

4、e 10. :Normal 1:DualnCE&DualR/nB 4 :QuadnCE&SingleR/nB 5 :QuadnCE&QuadR/nB 9 :1stblockOTP A:MaskOption1 L:Lowgrade 10. GenerationA:2ndGeneration B:3rdGeneration C:4thGeneration D:5thGeneration 11. ” 12. Package A:COB B:TBGA C:CHIPBIZ D:63-TBGA E:TSOP1(Lead-Free,1217) F:WSOP(Lead-Free) G:FBGA H:TBGA(

5、Lead-Free) I:ULGA(Lead-Free) J:FBGA(Lead-Free) K:TSOP1(1217) L:LGA M:TLGA N:TLGA2 P:TSOP1(Lead-Free) Q:TSOP2(Lead-Free) R:TSOP2-R S:SMARTMEDIA T:TSOP2U:COB(MMC) V:WSOP W:WAFER Y:TSOP1 13. Temp C:Commercial I:Industrial S:SmartMedia B:SmartMediaBLUE 0:NONE(ContainingWafer,CHIP,BIZ,Exceptionhandlingco

6、de) 3:WaferLevel3 14. BadBlock A:AppleBadBlock B:IncludeBadBlock D:DaisychainSample K:SandiskBin L:15BadBlock N:ini.0blk,add.10blk S:AllGoodBlock 0:NONE(ContainingWafer,CHIP,BIZ,Exceptionhandlingcode) 15. NAND-Reserved16. PackingType -Commontoallproducts,exceptofMaskROM -DividedintoTAPE&REEL(InMaskR

7、OM,dividedintoTRAY,AMMCPackingSeparately) Divide PackingType NewMarking Component TAPE&REEL T Other(TraynTube.Jar) 0(Number) Stack S Component (MaskROM) TRAY Y AMMOPACKING A Module MODULETAPE&REEL P MODULEOtherPacking M 1718.CustomerCustomerListReference 注：这里说的容量单位都是 bit,要除以 8 才是我们常说的容量值 【举例说明】 K 9

8、G A G 0 8 U 0 M - P C B 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 K9GAG08U0M 详细信息如下： 1. Memory(K) 2. NANDFlash:9 3. SmallClassification (SLC:SingleLevelCell,MLC:MultiLevelCell, SM:SmartMedia,S/B:SmallBlock) G:MLCNormal 45.Density AG:16G(Note:这里单位是 bit 而不是 byte,因此实际大小是 16Gb=2GB) 6. Technology 0:Normal(x8) 7. Organization 0:NONE8:x8 8. Vcc U:2.7V3.6V 9. Mode 0:Normal 10. Generation M:1stGeneration 11. 12.Package P:TSOP1(Lead-Free) 13. Temp C:Commercial 14. Cust