VLSI超大规模集成电路：devices

CMOSDevicesTheMOSTransistorPolysiliconAluminumChannel简化的MOS示意图PolySourceDrainLWPMOSvs.NMOSDSGGDSNMOSPMOSPolysiliconInVDDGNDPMOSOutMetal1NMOSContactsNWellWhatisaTransistor?ASwitch!|VGS|AnMOSTransistorVthVthinoutpmosVSB=0Ids理想MOS截至区Vgs<VT饱和区Vds>Vgs-VT线性区Vgs>VT00.511.522.50123456x10-4VDS(V)ID(A)VGS=2.5VVGS=2.0VVGS=1.5VVGS=1.0VResistiveSaturationVDS=VGS-VT理想MOS的方程问题1——导通电阻无穷大

VDS理想Id实际Vgs-VTVDSAT00.511.522.50123456x10-4VDS(V)ID(A)VGS=2.5VVGS=2.0VVGS=1.5VVGS=1.0VResistiveSaturationVDS=VGS-VT速度饱和效应沟道长度调制效应DynamicBehaviorofMOSTransistorTheGateCapacitancetoxn+n+CrosssectionLGateoxidexdxdLdPolysilicon

gateTopviewGate-bulkoverlapSourcen+Drainn+WGateCapacitanceCut-offResistiveSaturationMostimportantregionsindigitaldesign:saturationandcut-offDiffusionCapacitanceBottomSidewallSidewallChannelSourceNDChannel-stopimplantNA1SubstrateNAWxjLSSub-ThresholdConduction00.511.522.510-1210-1010-810-610-410-2VGS(V)ID(A)VTLinearExponentialQuadraticTypicalvaluesforS:60..100mV/decadeTheSlopeFactorSisDVGSforID2/ID1=10HSPICESPICEOverviewAboutSPICE:

SimulationProgramwithIntegratedCircuitEmphasis~isatransistorleveltimingsimulationtoolDevelopedbyUniversityofCalifornia/BerkeleyWidelyAdopted,BecomeDeFactoStandardInmarket－HSPICE,Spectre,TSPICE,Pspice,Smartspice...NetlistStructureSmallsignalmodeloftransitor.optionpostnomodtemp.tran100us50ms.printv(1)v(out)i(CL).paramLoad=10kvs10sin(0v0.1v600us00)Egs out 0 2 0 10Rs 1 2 50R1 2 0 10kRL out 0 LoadCL out 0 100p .libor.modelor.subcircuitTitleControlsSourcesComponents.alter.paramLoad=5k.endModelSubcircuitEndfileAnalysisNodeNamingandScaleFactorsInstance&ElementNamesC CapacitorD DiodeE,F,G,H Current&VoltageSourceI CurrentJ JFETorMESFETK MutualInductorL InductorM MOSFETQ BJTR ResistorO,T,U TransmissionLineV VoltageSourceX SubcircuitCallUnitsandScaleFactorsF 1e-15P 1e-12N 1e-9U 1e-6M 1e-3K 1e+3Meg 1e+6G 1e+9T 1e+12DB 20log10node0(zero)isalwaysGround

Groundmaybe0,GND,!GNDELEMENTS(I)Vdcn1n23.3n1n2tdtperv1v2tpwtftrIdcn3n420mPulse :Vpuln1n2pulse(v1v2tdtrtftpwtper)3.3V20mAn3n4ELEMENTS-MOSFET(I)

MOSFETMxxx D G S B MODEL W=xL=x

[AS=xAD=xPS=xPD=x]LWPerimeter/AreaSubcircuit.subckt inv 2 3 1 4 wp_inv=1.4ump1 3 2 1 1pch w=wp_inv l=0.6umn1 3 2 4 4nch w=1.4u l=0.6u.endsxinvX 5 9 3 99 inv wp_inv=2.8uxinvY 8 4 3 99 inv wp_inv=2.8uxinvZ 6 10 3 99 inv wp_inv=2.8uOutputControlStatementsOutputCommands:.PRINT :PrintNumericAnalysisResults.PLOT :GeneratesLowResolutionPlotin.lisfile.PROBE :AllowsSaveOutputVariablesOnly intotheGraphDataFiles.MEASURE :PrintNumericResultsofMeasured SpecificationsOutputVariables:DCandTransientAnalysis:Voltage,Current,&PowerACAnalysis:Real&Imag.ComponentofVoltage,CurrentElementAnalysis:Element-SpecificVoltage,Current.MEASURE:User-DefinedVariablesOutputControlStatements.MEASUREStatement:PropagationDelay,Risetime,FalltimeAverage,RMS,Peak-to-peakvoltage,Min.&Max.voltageoveraspecifiedperiodEquation,Derivative,IntegralevaluationFundamentalMeasurementMode:Rise,Fall,andDelay(TRIG-TARG)AVG,RMS,MIN,MAX,&Peak-to-Peak(FROM-TO)FIND-WHENExampleofMEASURE.MEASTRANVmaxMAXv(out)FROM=TstartTO=Tstop.MEASTRANVminMAXv(out)FROM=TstartTO=Tstop.MEASTRANTriseTRIGv(out)VAL=‘Vmin+0.1*Vmax’TD=Tstart RISE=1+ TARGv(out)VAL=‘0.9*Vmax’ RISE=1.MEASTRANTfallTRIGv(out)VAL=‘0.9*Vmax’ TD=Tstart FALL=2+ TARGv(out)VAL=‘Vmin+0.1*Vmax’ FALL=2.MEASTRANTdelayTRIGv(in)VAL=2.5 TD=Tstart FALL=1+ TARGv(out)VAL=2.5 FALL=2EXAMPLE(1)lab1-diodesweep.optionslistnodepost.op.dcvds0v2.5v0.1v.printdcv(vds)i(im1)M1vds2.5v0