第7章tcad工具仿真流程及在esd防护器件性能评估方面应用

第7TCAD仿真工具介MEDICIMEDICIMEDICI或TIF被调Medici输入输Medici网格定结构初工艺流结构操保存输$Definethegrid$ReadthemaskdefinitionMASK$InitializethestructureINITIALIZE<100>BORON=5E15

SCALEGRID 网格定义后的器件网格结构如图所示etchstart etchcontinuex=0 etchcontinuex=0.5 etchcontinuex=0.55y=0.3etchdone etchstart etchcontinuex=5 etchcontinuex=4.5 etchcontinuex=4.45y=0.3etchdone depositoxidethick=0.7；填充二 continue continue plot.2dscalegridc.grid=2$InitialDIFFUSIONTIME=30TEMP=1000DRY$NitridedepositionandfieldregionmaskDEPOSITNITRIDETHICKNESS=0.07SPACES=4DEPOSITPHOTORESISTNegativeTHICKNESS=1EXPOSEMASK=FieldETCHNITRIDEETCHOXIDETRAPETCHSILICONTRAPTHICKNES=0.25$InitialDIFFUSIONTIME=30TEMP=1000DRY$NitridedepositionandfieldregionmaskDEPOSITNITRIDETHICKNESS=0.07SPACES=4DEPOSITPHOTORESISTNegativeTHICKNESS=1EXPOSEMASK=FieldETCHNITRIDEETCHOXIDE ETCHSILICONTRAPTHICKNES=0.25场区刻蚀完成后的结构如图所示$BoronfieldimplantIMPLANTBORONDOSE=5E12+ENERGY=50TILT=7ROTATION=30ETCHPHOTORESISTALL$FieldMETHODPD.TRANSCOMPRESSDIFFUSIONTIME=20TEMP=800+DIFFUSIONTIME=180+DIFFUSIONTIME=20TEMP=1000ETCHNITRIDE$UnmaskedenhancementIMPLANTBORONDOSE=1E12+TILT=7$PlottheinitialNMOSSELECT+TITLE="LDDProcess–NMOSIsolation0PLOT.2DSCALEGRIDC.GRID=2Y.MAX=2.PLOT.2DSCALEY.MAX=2.00$ColorfilltheregionsCOLORSILICONCOLOR=7COLOROXIDECOLOR=5$PlotcontoursofboronFOREACHX(15TO20STEP0.5)CONTOURVALUE=XLINE=5+$ReplotboundariesPLOT.2D^AX^CL$DefinepolysiliconDEPOSITPOLYSILICONTHICK=0.4SPACES=2DEPOSITPHOTORESISTTHICK=1.0EXPOSEMASK=PolyETCHPOLYSILICONTRAPTHICK=0.7ANGLE=79ETCHPHOTORESISTALL$OxidizethepolysiliconDIFFUSIONTIME=30TEMP=1000$LDDimplantata7-degreeIMPLANTARSENICDOSE=5E13+TILT=7.0ROTATION=30$DefinetheoxidesidewallDEPOSITOXIDETHICK=0.4ETCHOXIDETHICK=0.45TRAP$HeavyS/Dimplantata7-degreetiltIMPLANTDOSE=1E15ENERGY=200+ARSENICTILT=7.0$AnnealtoactivatethearsenicDIFFUSIONTIME=15TEMP=950$DepositBPSGandcutsource/draincontactholesDEPOSITOXIDEDEPOSITPHOTORESIST+EXPOSEETCHOXIDETHICKNESS=1.0+ETCHPHOTORESIST$DefinetheDEPOSITALUMINUMTHICKNESS=1.0DEPOSITPHOTORESISTPOSITIVE+THICKNESS=1.0EXPOSEMASK=MetalETCHALUMINUM+THICKNESS=1.5ANGLE=75ETCHPHOTORESISTALLSTRUCTUREREFLECT$electrodeElectrodename=sourcex=-2.5y=-0.5Electrodename=drainx=2.5y=-0.5Electrodename=gatex=0y=-0.2Electrodename=subbottom$SAVEForSAVEFILEOUT.FILE=NMOSmedicipoly.ele从工艺级仿真向器件级仿真的过渡流工艺描述文件Mask定TL1 2 4600PWELL

4.6

X(以上语句中，TL10100是文件开头标识，被工艺和器件仿调用mask文工艺仿真需要导入的mask文件以.tl1mask文件的文件名是nmos.tl1mask文件，本例中是process:0_0savefileout.file=process:0_0maskinitializein.file=process:0_0T4到Medici的输electrodex=0.5y=-0.5下面的语句实现了从Tsuprem-4到Medicisavefileout.file=ggnmosmedicipoly.ele其中poly.ele指多晶硅区域在medici输出文件中化为电极，elec.bot指电信号会加在电极的背部文件（本例中是ggnmos）,相应的描述语句是：meshin.file=ggnmosTSUPREM-4其中的y.max=5指的是只对硅基上5um深度内进行网格导入半导体器件级仿真的流GroundedNMOS）(a)整体版图(b在静电模型HBM（HumanBodyModel）下，对ESD防护StartC10L12R23PNMOS3=Drain0=Gate FILE=<特定的网格文件>$Initialguessatcircuitnode.NODESETV(1)=6KV(2)=0FINISHMethodSolvedt=1e-11tstop=1e-Plot.1dx.axis=timey.axis=VC(3)+title="protectiondevicePlot.1dx.axis=timey.axis=I(PNMOS.drain)+title="protectiondevice定标识，分别表示是电路部分和物理（器件）收敛下面介绍法，使得即使在程序不收敛无法看曲搜索关键字，本例中搜索VC(3、I(PNMOS.drain)，将其电学参拟合的NMOS漏极电压和时间的关系 拟合的NMOS漏电流和时间的关系根据0.4ns合的I-V

拟合的I-V阈值仿TITLEVtMESHIN.FILE=nmos$MODELSyticFLDMOBSRFMOB2BGNAugerconsrhSYMBCARRIERS=0METHODICCGSOLVEREGRIDPOTENIGNORE=OXIDERATIO=.1+PLOT.2DGRIDTITLE="nmos"FILL$设置电压边界扫描0-MODELSII.TEMPSYMBNEWTONCARRIERS=2ELE.TEMPHOL.TEMPMETHODAUTONRITLIMIT=100N.MAXBL=30+SOLVEV(gate)=0ELECTRODE=gate+nsteps=50PLOT.1DX.AXIS=V(gate)Y.AXIS=I(drain)+COLOR=3+TITLE="vtESD现电路中的ESD防ESD防护器ESD设计窗防护等判断标CLASS有任意一个管脚在250VHBM脉冲下失CLASS所有管脚通过250VHBM脉冲测试但是有任意一个管脚在500VHBM脉冲下失CLASS所有管脚通过500VHBM脉冲测试但是有任意一个管脚在1000VHBM脉冲下失CLASS所有管脚通过1000VHBM脉冲测试但是有任意一个管脚在2000VHBM脉冲下失CLASS所有管脚通过2000VHBM脉冲测试但是有任意一个管脚在4000VHBM脉冲下失CLASS所有管脚通过4000VHBM脉冲测试但是有任意一个管脚在800