半导体物理与器件第四版课后习题答案(供参考)

Chapter44.1whereandarethevaluesat300K.(a)Silicon(K)(eV)(cm)(b)Germanium(c)GaAs(K)(cm)(cm)_______________________________________4.2Plot_______________________________________4.3(a)Bytrialanderror,(b)KBytrialanderror,K_______________________________________4.4AtAtK,K,eVeVororeVNowsocm_______________________________________4.5ForForForK,K,K,eVeVeV(a)ForK,(b)For(c)ForK,K,_______________________________________4.6(a)LetThenTofindthemaximumvalue:whichyieldsThemaximumvalueoccursat(b)LetThenTofindthemaximumvalueSameaspart(a).Maximumoccursator_______________________________________4.7whereandThenor_______________________________________4.8Plot_______________________________________4.9Plot_______________________________________4.10Silicon:,eVGermanium:,eVGalliumArsenide:,eV_______________________________________4.11(K)(eV)()(eV)_______________________________________4.12(a)meV(b)meV_______________________________________4.13LetconstantThenLetsothatWecanwritesothatTheintegralcanthenbewrittenaswhichbecomes_______________________________________4.14LetforThenLetsothatWecanwriteThenorWefindthatSo_______________________________________4.15WehaveForgermanium,Then,orTheionizationenergycanbewrittenaseVeV_______________________________________4.16WehaveForgalliumarsenide,Then,TheionizationenergyisoreV_______________________________________4.17(a)eV(b)eV(c)cm(d)Holes(e)eV_______________________________________4.18(a)eV(b)eV(c)cm(d)eV_______________________________________4.19(a)eVeV(b)cm(c)p-type_______________________________________4.20(a)eVcmeVcm(b)eVeVcm_______________________________________4.21(a)eVcmeVcm(b)eVeVcm_______________________________________4.22(a)p-type(b)eVcmeVcm_______________________________________4.23(a)cmcm(b)cmcm_______________________________________4.24(a)eV(b)(c)eVcm(d)Holes(e)eV_______________________________________4.25eVcmcmcm(a)eV(b)(c)eVcm(d)Holes(e)eV_______________________________________4.26(a)cmeVcm(b)eVcmcmeVeVcm_____________________________________4.27(a)cmeVcm(b)eVcmcmeVeVcm_______________________________________4.28(a)For,Thencm(b)cm_______________________________________4.29SoWefindeV_______________________________________4.30(a)Thencmcm(b)_______________________________________4.31FortheelectronconcentrationTheBoltzmannapproximationapplies,soorDefineThenTofindmaximum,setorwhichyieldsFortheholeconcentrationUsingtheBoltzmannapproximationorDefineThenTofindmaximumvalueof,setUsingtheresultsfromabove,wefindthemaximumat_______________________________________4.32(a)Silicon:WehaveWecanwriteForeVandeVwecanwriteorcmWealsohaveAgain,wecanwriteForandeVThenorcm(b)GaAs:assumeTheneVorcmAssumeTheneVorcm_______________________________________4.33Plot_______________________________________4.34(a)(b)cmcmcmcm(c)(d)cmcmcmcm(e)cmcmcm_______________________________________4.35(a)cmcm(b)cmcm(c)(d)cmcmcmcm(e)cmcmcm_______________________________________4.36(a)Ge:cm(i)orcmcm(ii)cmcm(b)GaAs:(i)cmcmcmcm(ii)cm(c)Theresultimpliesthatthereisonlyoneminoritycarrierinavolumeofcm._______________________________________4.37(a)Forthedonorlevelor(b)WehaveNoworThenor_______________________________________4.38(a)p-type(b)Silicon:orcmThencmGermanium:orcmThencmGalliumArsenide:cmandcm_______________________________________4.39(a)(b)n-typecmcm(c)cmcm_______________________________________4.40cmn-type_______________________________________4.41cmSocm,Thencmsothatcm_______________________________________4.42Plot_______________________________________4.43Plot_______________________________________4.44Plot_______________________________________4.45socmcm_______________________________________4.46(a)p-typeMajoritycarriersareholescmMinoritycarriersareelectronscm(b)BoronatomsmustbeaddedSocmcm_______________________________________4.47(a)(b)n-typecmelectronsaremajoritycarrierscmholesareminoritycarriers(c)socm_______________________________________4.48ForGermanium(K)(cm)(eV)andcm(K)(eV)(cm)_______________________________________4.49(a)Forcm,eVcmcm,,eVeVcm,eV(b)Forcm,eVcmcmcm,,,eVeVeV_______________________________________4.50(a)cmsoNowBytrialanderror,(b)AtKK,eVAtK,eVcmeVtheneV(c)Closertotheintrinsicenergylevel._______________________________________4.51AtAtK,K,eVK,K,eVeVcmAtK,cmAtK,cmAtAtKandK,cmK,cmThen,K,eVK,K,eVeV_______________________________________4.52(a)Forcm,,eVcmeVcmcm,eV,eV(b)Forcm,,eVcmcmcmeVeVeV,,_______________________________________4.53(a)oreV(b)ImpurityatomstobeaddedsoeV(i)p-type,soaddacceptoratoms(ii)eVThenorcm_______________________________________4.54soorcm_______________________________________4.55(a)Silicon(i)eVeV(ii)cmcmAdditionaldonoratoms(b)GaAs(i)eV(ii)eVcmcmAdditionaldonoratoms_______________________________________4.56(a)(b)eVeV(c)Forpart(a);cmcmForpart(b):cmcm_______________________________________4.57cmAddadditionalacceptorimpuritiescm_______________________________________4.58(a)(b)eVeV(c)(d)eV(e)eV_______________________________________4.59(a)eV(b)eV(c)(d)eVeV(e)eV_________________________