锗浓缩法制备较高张应变锗发光性质

Roomtemperaturephotoluminescencefromtensile-strainedGOIfabricatedbyaGecondensationtechniqueShihaoHuang,WeifangLu,ChengLi,WeiHuang,HongkaiLai,andSongyanChenDepartmentofPhysics,SemiconductorPhotonicsResearchCenter,XiamenUniversityOutline2、Tensile-strainedGOIfabrication3、PropertiesofGOI4、Conclusion1、Introduction1、IntroductionJ.Liu,etal,MIT,OpticsLetters,35(5):679-681,2010DirectGapOpticalGainfromGe-on-SiTensilestraintransformGeintodirectbandgapmeterialX.Sun,Ge-on-SiLight-EmittingMaterialsandDevicesforSiliconPhotonics1、IntroductionMethodstoapplyatensilestraintoGe1.DifferenceofthermalcoefficientsbetweenGeandSi=>0.25%2.GephotonicwiregrownonGaAssub.=>0.40%3.MechanicalstressonGe=>1.13%4.GOIsub.madebylayertransfertechnique=>0.19%5.Ourstrategytofabricateultra-thinGOIbyGecondensation=>0.60%2、Tensile-strainedGOIfabrication2、Tensile-strainedGOIfabricationSiO2GeSiBOXSi3N4Si3N4oxideSiO2GeSiBOXSiGeSiSiSicapBOXSi3N4Si3N4SampleBSampleASiGeSiSiSicapBOXoxideSiGeSiSiSicapBOXSiTopSi(38nm)BOXepitaxy32μmTopview2、Tensile-strainedGOIfabricationGecondensationprocessSixGe1-xSicapSibuffertopSiBOXSiSiO2SixGe1-xBOXSiGeGeSiO2BOXSioxideoxideGecondensationSelectiveoxide2、Tensile-strainedGOIfabrication130010307604049022020190T/℃1150900A00.5h2.5h4.5h4.5h4.5h4.5h9cycles9cycles9cycles9cycles20min20minA1A2A3A4Oxidize10minRemovebyabout260nmSiO2t/min.Annealing20minCondensationprocessesRamanspectroscopyindicatedthatultra-thinGOIwereachieved.2、Tensile-strainedGOIfabricationTf=Ti-0.46T0

Xf=XiTi/Tf

TheamountofGeisconservedbeforeandaftertheoxidation.TheSiGelayerthicknessTfasafunctionoftheoxidethicknessT0:TheGecontentofthefinalSiGelayerXf:

XitheaverageGecontentTithetotalthicknessoftheinitialepitaxialSiGe/Sibilayer.ThefinalGecontent=>1.0Thickness=>13nm3、PropertiesofGOI3、PropertiesofGOIRamanspectrafromlocalultra-thinGOIandwafer-scaleGOIandbulkGeforcomparison.ThewholeRamanspectrafromthelocalGOI.EvaluationofstrainintheGelayer3、PropertiesofGOI

Roomtemperaturedirectbandphotoluminescencefromlocalultra-thinGOIandwafer-scaleGOIandbulkGeforcomparison.3、PropertiesofGOI0.8eVTensilestrain0.60%0.71eV@1657nmonPLShifttohigherenergy38meVShifttolowerenergy89meVContributeto51meV4、Conclusion1.Anultra-thinGOIwithabiaxialtensilestrainaslargeas0.60%usinglocallyselectiveoxidationofSiGeepilayeronSOIsubstratewasfabricated.2.RoomtemperaturedirectbandphotoluminescenceofGOIwasobservedat1657nmwhichthepea