等离子体等离子体制备微晶硅薄膜太阳电池

等离子体等离子体制备微晶硅薄膜太阳电池

1性别对碳系co能grackingsnosilit-sic-tofab意义上的粘膜上诉粘膜。面向非正字体的si-分配，分配给ci的分配，并分配给非正字体的分配。例如，在这一事件中，高速hy谴责玻璃传输的表面区域（c-si:h）的数量尚未确定，但报告的sultansultan表面区域的数量尚未确定。这是第一块牌匾。微丝区域。洛杉矶高原（cd）上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的第二块太阳上的。ThispaperaddressesthedevelopmentofSnO2andSnO2/ZnObi-layerfilmsbyDC-magnetronsputtering.SnO2andSnO2/ZnOfilmswereexposedinH-plasmaatdifferentsubstratetemperaturesforvarioustimes.Theopticalproperties,surfacemorphologies,andresistivitiesoftheseTCOfilmsbeforeandafterH-plasmaexposurewerestudied.Finally,aμc-Si:HthinfilmsolarcellwasfabricatedonZnO/SnO2/glass.2u2004药品与u2004ZnOfilmswiththicknessof50nmweredepositedonSnO2-coatedglassbyDC-magnetronsputteringatasubstratetemperatureTs=300℃,DCvoltageVDC=250V,andpressure0.5Pa.TheSnO2andSnO2/ZnOfilmswereexposedunderhydrogenplasmawiththeconditionsof50WRF-power,130Pachamberpressure,and200sccmH2flow,wherethesubstratetemperaturesandexposuretimeswerechanged.Filmcharacterizationswereperformedbeforeandaftertheplasmaexposure.TheopticaltransmissionsoftheTCOfilmsweremeasuredwithaUVspectrophotometer,andthesurfacemorphologieswerestudiedbyscanningelectronmicroscopy(SEM).TheresistivitiesoftheSnO2andSnO2/ZnOfilmsbeforeandafterH-plasmaexposureweretestedwithafour-pointprobe.SimplemicrocrystallinesolarcellswerefabricatedinamultichamberPECVDsystemwithdiodetypeparallelplatereactorsdecomposingdifferentgasmixturesbyplasmaonSnO2/ZnOfilm.Thep-i-nstructurewasglass/SnO2/ZnO/p-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Al.Theperformancesofthesolarcellswerestudiedfromcurrent-voltagecharacteristics,measuredunderAM1.5illuminationbyasourcesolarsimulator.3影响的神圣迪迪斯运营3.1“vsippen”第..4与.4细胞二元visiburesixcoatingvisipersonalssorace.........................................................3.3Figures1and2showtheopticaltransmissionspectraofthesinglelayerSnO2andbi-layerSnO2/ZnOfilmsbeforeandafterhydrogenplasmaexposure,respectively.Inallthecases,theopticaltransmissionishighoverawiderrangeofwavelengthsforbothsingle-layerSnO2(curveaofFig.1)andSnO2/ZnObi-layer(curveeofFig.2)beforeH-plasmaexposure.WiththinZnOfilm,thetransmissionintherangeofvisiblelighthaslittlechange.InFig.1,curvebshowstheopticaltransmissionofSnO2filmafter5minhydrogenplasmaexposureat150℃,whereascurvecshowsthetransmissionafter5minH-plasmaexposureat200℃andcurvedshowsthetransmissionafter1minH-plasmaexposureat300℃.At150℃,theSnO2filmisstableenoughduringH-plasmaexposureandtheopticaltransmissiondoesnotchangeatall.Howeverwhenthesubstratetemperatureishigherthan150℃,thetransmissioninthevisiblerangedecreasesdrastically.InthecaseofSnO2/ZnObi-layerfilm(showninFig.2),ZnOcoatinginducesadecreaseinthetransmissionintheinfraredregion,butthechangeintransmissionisverysmall,andaftertheH-plasmaexposurethereisaslightincreaseininfraredtransmission.Thismaybebeneficialforitsapplicationinsolarcellsasawindowlayer.3.2u3000ge-la三维建模Figures3(a)and(b)showthesurfacemorphologiesofSnO2filmsbeforeandafterH-plasmaexposure,respectively.After1minofplasmaexposure,theSEMofhydrogenplasma-exposedSnO2changed.Grainswithsize~80nmareobservedintheplasma-degradedSnO2film,andthegrainsdisplaysphericalcharacter.Meanwhile,graypowderappearedonthesurfaceoftheglass.Thereasonmaybethatunderhydrogenplasma,HatomsreactwithlatticeoxygenatomsandmetallicSnispresented.Figure4showsthesurfacemorphologyofSnO2/ZnObi-layerfilmafterH-plasmaexposure.Comparedwiththesurfacemorphologyofas-depositedZnOfilm(notshownhere),ZnOfilmdoesnotdegradeunderhydrogenplasma,becauseathinZnOlayeractsasaprotectivelayeronSnO2surfaces,notwithstandingthicknessof50nmonly.Thisbi-layerfilmcanbeexposedtoH-plasmawithoutanymajorchangeinopticaltransmission.ThedifferentdurabilityofSnO2andZnOtoH-plasmaisduetothedifferentoxidizabilitiesofSnandZnions,theformerofwhichishigherthanthelatter.3.3sno2/znobi-lactore-sno2德国co治理法上的sno2/la三维c.sn/h-placket/h-placket/sno2straced以lacket为例Table1showstheresistivitiesofSnO2andSnO2/ZnObi-layerfilmsbeforeandafterH-plas-maexposure.ForSnO2films,after5minH-plasmaexposureat150℃,theresistivitybecomeslessthanthatofthedepositedfilm,butremainsonthesameorderofmagnitude;Whenthetemperatureincreases,theresistivitydecreasessharply.ThisiscausedbythedeoxidizationofSnfromtheSnO2structure.ForSnO2/ZnObi-layerfilms,H-plasmaexposurehaslittleinfluenceontheresistivitiesofthefilms,andthedecreasingofresistivitiesiscausedbyannealingatdifferentsubstratetemperatures.Simplesinglejunctionsolarcellswiththestructurep-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Alhavebeenfabricatedonglass/SnO2/ZnOsubstrates.TheI-VcharacteristicsofthismicrocrystallinesiliconbasedcellsareshowninFig.5,andanefficiencyof3.8%isobtained.Dasetal.demonstratedthatcellspreparedonSnO2-coatedglasssubstratehavealowefficiencyvalue.ThisisduetothedegradationofSnO2filmunderhighhydrogenplasma,whichisessentialforthefabricationofap-μc-Si:Hlayer.3.4u2004范围ThereasonsthatZnOfilmismorestablethanSnO2filminH-plasmacanbeexplainedbythedifferenceofstandardelectrodeelectricalpotentialbetweenmetalZnandSn:Sn4+−→0.15Sn2+−→−−−0.136Sn(1)Sn4+→0.15Sn2+→-0.136Sn(1)Zn2+−→−−−0.763Zn(2)Ζn2+→-0.763Ζn(2)Equations(1)and(2)showthestandardelectrodepotentialelectricalpotentialofmetalSnandZn.Althoughthisvalueismeasuredinliquidsolution,wecanobtainthattheelectricalpotentialofSn4+ismuchhigherthanZn2+ironinthesamestate.ThismeansthatinfilmsZnOismorestablethanSnO2underH-plasmacondition,andthelattermayreactasfollows:SnO2+4H→Sn+2H2OSnΟ2+4Η→Sn+2Η2ΟThus,theopticaltransmissionofSnO2filmsdecreasesdrasticallyunderH-plasmaoftheplayerandthemaximumpartofincidentlightwillbeabsorbedinsidetheTCO,i.e.effectivelightabsorptionintheactivelayerisreduced.SnO2/ZnOstructureisstableenoughinH-plasmaandcanbeappliedinmicrocrystallinesiliconsolarcells.4sno2/znobi-lactorssili农村SnO2andZnOcoatedSnO2