《半导体工程专业英语》课件-5.3 Surface Processing

微专业---半导体制造技术课程：半导体工程专业英语ContentsSemiconductorProperties半导体特性01SemiconductorMaterials半导体材料02SemiconductorDeviceandHowTheyareUsed半导体器件及其使用03ProcessTechnology工艺技术04FabricationProcesses制造工艺05SemiconductorMaterialsandProcessCharacterization半导体材料与工艺表征06FabricationProcesses5.1PatternDefinitionSchemes5.2ProcessingStepsinTop-DownSequence5.3SurfaceProcessing5.4AdditiveProcesses5.5Lithography5.6SubtractiveProcesses5.7SelectiveDoping5.8ProcessingofContactsandInterconnects5.9AssemblyandPackaging0515Introduction

Thissectionconsidersselectedkeyissuesrelatedtosurfaceprocessing

technologyinsemiconductormanufacturing.First,surfacecleaningprocessesareconsidered.Then,meritsandimplementationofoperationsreferredtoassurfaceconditioningarediscussed./ˈɪmplɪmentɪd/实现5.3SurfaceProcessing/kənˈdɪʃənɪŋ/处理/ˈmerɪts/优点5FabricationProcesses16

Surfacecleaningistheprocessaimedattheremovalofsolids,nonvolatile

contaminantssuchasparticlesormetallicimpuritiesfromthe

surfacewithoutuncontrolledalterationsofitscharacteristics./nɒnˈvɒlətaɪl/非挥发性的/ˌɔːltəˈreɪʃ(ə)n/改变5FabricationProcesses5.3.1

SurfacecleaningText5.3SurfaceProcessingImplementationofthesurfacecleaningprocesses./kənˈtæmɪnənt/污染物17WetcleaningDuringthemostcommonlyusedinsemiconductorfabricationwetcleaningoperations,contaminantsareremovedviaselective

chemicalreactionsintheliquid-phasewhichcauseseithertheirdissolution

inthesolvent,orconversionintothesolublecompounds./kənˈvɜːrʒ(ə)n/转变/ˈsɑːljəb(ə)l/可溶的5FabricationProcesses5.3.1

Surfacecleaning5.3SurfaceProcessing18DryCleaningInthiscaseremovalofcontaminantfromthesurfacetakesplacevia

chemicalreactioninthegas-phaseconvertingitintoavolatilecompound

(Fig

(a)),orasaresultofmomentumtransferbetweenspeciesimpinging

onthesurfaceandsurfacecontaminants(Fig

(c)),orasaresultofsurface

irradiation(IR-heating,UV-bondbreaking/oxidation)sufficienttoovercome

forcescausingvolatilecontaminanttoadheretothesurface(Fig

(d)).

/moʊˈmentəm/动能/ɪmˈpɪndʒɪŋ/冲击/ədˈhɪr/黏附5FabricationProcesses5.3.1

Surfacecleaning5.3SurfaceProcessing/ɪˌreɪdiˈeɪʃn/照射/səˈfɪʃ(ə)nt/足够的19

Surfaceconditioningoperationscanbecarriedoutusingeitherwetordry

chemistriesaswellastoolsandmethodsusedinsurfacecleaningoperations.

Thegoalistoenforcesurfaceterminationassuringstable,timeandambient

resistant,aswellasreproduciblesurfacecharacteristics./ɪnˈfɔːrs/强化/ˈæmbiənt/环境的/ˌriːprəˈduːsəbl/可重复的5FabricationProcesses5.3.2

SurfaceconditioningText5.3SurfaceProcessing(a)Siliconsurfaceasexposedtoambientair,(b)hydrogenterminatedSi

surface./ˌtɜːrmɪˈneɪʃ(ə)n/键饱和20In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.dryprocesssurfacecleaninglift-offprocesssoft-lithographyetchingprocess表面清洗软光刻刻蚀工艺剥离工艺干法工艺5FabricationProcesses21In-classexercisFillintheblankswithproperwordsorphrases.1.The

isusedwithmaterialswhichbecauseofitsresistancetoetching,forinstancegold,cannotbepatternedfollowingconventionaltop-downprocedure.

2.

istheprocessaimedattheremovalofsolids,nonvolatilecontaminantssuchasparticlesormetallicimpuritiesfromthe

surfacewithoutuncontrolledalterationsofitscharacteristics.5FabricationProcesses22单词/短语音标中文含义2D(two-dimensional)printing/daɪˈmenʃən(ə)l/2D印刷3D(three-dimensional)printing/daɪˈmenʃən(ə)l/3D打印additivemanufacturing/ˈædətɪvˌmænjuˈfæktʃərɪŋ

/增材制造additiveprocesses/ˈædətɪvˈprɑːsesɪz

/增材工艺anisotropicetching/ˌænaɪsəˈtrɑːpɪkˈetʃɪŋ/各向异性刻蚀AtmosphericPressureCVD(APCVD)/ˌætməsˈfɪrɪkˈpreʃər/常压化学气相沉积AtomicLayerDeposition(ALD)/əˈtɑːmɪkˈleɪərˌdepəˈzɪʃn/原子层沉积back-end-of-the-line(BE-OL)/laɪn/后道batchprocessing/bætʃˈprɑːsesɪŋ

/批量工艺KeyTerms5FabricationProcesses23单词/短语音标中文含义blanketdeposition/ˈblæŋkɪtˌdepəˈzɪʃn/均厚沉积chemicaletching/ˈkemɪk(ə)lˈetʃɪŋ/化学刻蚀chemicalinterface/ˈkemɪk(ə)lˈɪntərfeɪs/化学界面ChemicalVaporDeposition(CVD)/ˈveɪpərˌdepəˈzɪʃn/化学气相沉积Chemical-MechanicalPlanarization(CMP)/məˈkænɪk(ə)lplænəraɪ'zeɪʃn/化学机械抛光/平坦化computationallithography/ˌkɑːmpjuˈteɪʃənllɪˈθɑːɡrəfi/计算光刻conformalcoating/kənˈfɔrməlˈkoʊtɪŋ/保形覆盖contactprinting/ˈkɑːntæktˈprɪntɪŋ/接触式光刻criticaldimension(CD)/ˈkrɪtɪk(ə)ldaɪˈmenʃn/关键尺寸5FabricationProcesses24单词/短语音标中文含义damasceneprocess/ˈdæməsinˈprɑːses/大马士革工艺/镶嵌工艺DeepReactiveIonEtching(DRIE)/riˈæktɪvˈaɪənˈetʃɪŋ/深反应离子刻蚀diffusion-controlledprocess/dɪˈfjuːʒnkənˈtroʊldˈprɑːses/扩散控制过程directwritelithography/dəˈrektraɪtlɪˈθɑːɡrəfi/直写光刻dopant,doping/ˈdoʊpənt//ˈdopɪŋ/掺杂剂，掺杂dryprocess/ˈprɑːses/干法工艺e-beamevaporation/ɪˌvæpəˈreɪʃ(ə)n/电子束蒸发e-beamlithography/lɪˈθɑːɡrəfi/电子束光刻electrodeposition/ɪˈlektrəʊˌdepəˈzɪʃən/电沉积electromigration/elektroʊmɪɡ'reɪʃn/电迁移etchingprocess/ˈetʃɪŋˈprɑːses/刻蚀工艺5FabricationProcesses25单词/短语音标中文含义evaporation/ɪˌvæpəˈreɪʃ(ə)n/蒸发excimerlaser/ˈeksəmərˈleɪzər/准分子激光front-end-of-theline(FEOL)/laɪn/前道full-fieldexposure/ɪkˈspoʊʒər/全域曝光heterogeneousintegration/ˌhetərəˈdʒiːniəsˌɪntɪˈɡreɪʃ(ə)n/异质集成High-PressureOxidation(HIPOX)/ˌɑːksɪˈdeɪʃn/高压氧化hydrogentermination/ˈhaɪdrədʒənˌtɜːrmɪˈneɪʃ(ə)n/氢终止hydrophilicsurface/ˌhaɪdrəˈfɪlɪkˈsɜːrfɪs/亲水表面hydrophobicsurface/ˌhaɪdrəˈfoʊbɪkˈsɜːrfɪs/疏水表面immersionlithography/ɪˈmɜːrʒnlɪˈθɑːɡrəfi/浸没式光刻InductivelyCoupledPlasma(ICP)/ɪnˈdʌktɪvliˈkʌpldˈplæzmə/电感耦合等离子体5FabricationProcesses26单词/短语音标中文含义interleveldielectric/ɪnˈtɜ:(r)ˈlev(ə)lˌdaɪɪˈlektrɪk/层间电介质ionbeamsputtering/ˈaɪənbiːmˈspʌtərɪŋ/离子束溅射ionimplantation/ˌɪmplænˈteɪʃn/离子注入ionmilling/ˈmɪlɪŋ/离子铣削isotropicetching/ˌaɪsəˈtrɑːpɪkˈetʃɪŋ/各向同性刻蚀lateraldiffusion/ˈlætərəldɪˈfjuːʒn/横向扩散lift-offprocess/ˈlɪftɔːf/剥离工艺LowPressureCVD,LPCVD/ˈpreʃər/低压化学气相沉积magnetronsputtering/ˈmæɡnəˌtrɒn/磁控溅射maskedlithography/lɪˈθɑːɡrəfi/掩模光刻maskalignment/əˈlaɪnmənt/掩模对齐5FabricationProcesses27单词/短语音标中文含义mechanicalmask/məˈkænɪk(ə)l/机械掩模megasonicagitation/meɡә'sɒnɪkˌædʒɪˈteɪʃ(ə)n/兆声清洗metalorganiccompound/ˈmet(ə)lɔːrˈɡænɪkˈkɑːmpaʊnd/金属有机化合物MetalorganicCVD,MOCVD/ˈmet(ə)lɔːrˈɡænɪk/金属有机物化学气相沉积minimumfeaturesize/ˈmɪnɪməmˈfiːtʃərsaɪz/最小特征尺寸mistdeposition/mɪst/喷雾沉积molecularbeam/məˈlekjələr/分子束MolecularBeamEpitaxy(MBE)/ˈepɪˌtæksi/分子束外延multipleprinting/ˈmʌltɪp(ə)l/多次曝光non-opticallithographies/ˈɑːptɪk(ə)l/非光学光刻nonselectiveetching/ˌnɑːnsɪˈlektɪv/非选择性刻蚀5FabricationProcesses28单词/短语音标中文含义patterntransferlayer/trænsˈfɜːr/图案转移层photolithography/ˌfoʊtoʊlɪˈθɑːɡrəfi/光刻physicaletching/ˈetʃɪŋ/物理刻蚀physical/chemicaletching/ˈetʃɪŋ/物理/化学刻蚀PinGridArray(PGA)/ɡrɪd/引脚网格阵列PlasmaEnhancedCVD(PECVD)/ɪnˈhænst/等离子体增强化学气相沉积plasmaenhancement/ɪnˈhænsmənt/等离子体增强plasmaetching/ˈetʃɪŋ/等离子刻蚀preferentialetching/ˌprefəˈrenʃ(ə)l/优先腐蚀proximityeffect/prɑːkˈsɪməti/邻近效应proximityprinting/ˈprɪntɪŋ/接近式光刻5FabricationProcesses295FabricationProcesses单词/短语音标中文含义RapidThermalOxidation(RTO)/ˌɑːksɪˈdeɪʃn/快速热氧化ReactiveIonEtching(RIE)/riˈæktɪvˈaɪən/反应离子刻蚀reactivesputtering/ˈspʌtərɪŋ/反应溅射remoteplasma/rɪˈmoʊt/远程等离子体resolutionenhancingtechnique/ˌrezəˈluːʃ(ə)n/分辨率增强技术selectivedoping/ˈdopɪŋ/选择性掺杂selectiveetching/ˈetʃɪŋ/选择性刻蚀Self-AssembledMonolayer(SAM)/əˈsembldˈmɑːnoʊˌleɪər/自组装单分子膜shadowmask/ˈʃædoʊ/阴影掩模soft-lithography/sɔːftlɪˈθɑːɡrəfi/软光刻spincoating/spɪnˈkoʊtɪŋ/旋涂30单词/短语音标中文含义sputterdeposition/ˈspʌtərˌdepəˈzɪʃn/溅射沉积sputteretching/ˈspʌtərˌˈetʃɪŋ/溅射刻蚀step-and-repeatexposure/ɪkˈspoʊʒər/分步重复曝光struc