《电子技术（双语）》课件-二极管和三极管的开关特性

探秘门电路：二极管与三极管的开关特性原理及应用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplications探秘门电路：二极管与三极管的开关特性原理及应用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsTeacher:JiaLisi授课教师：贾丽斯门电路掌控信号的流通与阻断

Gatecircuitscontroltheflowandblockingofsignals.二极管

Diodes三极管

Transistors门电路的基础元件

Fundamentalcomponentsofgates探秘门电路：二极管与三极管的开关特性原理及应用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsPart01学习目标LearningObjectives能力培养：Capacitybuilding:学习目标LearningObjectives知识掌握:Knowledgemastery:二极管、三极管开关特性原理。Principlesofswitchingcharacteristicsofdiodesandtransistors.分析二极管、三极管在简单电路中的工作状态。Analyzeworkingconditionsofdiodesandtransistorsinsimplecircuits.运用二极管、三极管实现基本逻辑功能。Usediodesandtransistorstoimplementbasiclogicalfunctions.素养提升：Literacyimprovement:认识相关知识的应用价值。Recognizetheapplicationvalueofrelevantknowledge.培养科学态度与创新思维。cultivateascientificattitudeandinnovativethinking.Part02案例导入CaseIntroduction灯灭

Turnoff

案例导入CaseIntroduction电灯按钮开关（按亮按灭）Lightswitch(turnonandturnoff)灯亮Turnon案例导入CaseIntroduction二极管

Diodes

三极管

Transistors

案例导入CaseIntroduction二极管

Diodes

三极管

Transistors

无需机械操作Nomechanicaloperationrequired

电子开关

Electronicswitches通过电信号控制Controlledbyelectricalsignals

例如，在计算机的数据存储和处理电路中，就大量运用了二极管和三极管的开关特性来存储和传输0、1数字信号。案例导入CaseIntroductionForexample,computerdatastorageandprocessingcircuitsmakeextensiveuseoftheswitchingcharacteristicsofdiodesandtransistorstostoreandtransmitdigitalsignals(0sand1s).二极管、三极管的开关特性Switchingcharacteristicsofdiodesandtransistors

门电路的基本概念

Basicconceptsofgatecircuits探秘门电路：二极管与三极管的开关特性原理及应用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsPart03二极管的开关特性SwitchingcharacteristicsofdiodesNP电极引线Electrodelead管壳Case结构与开关原理Structureandprinc二极管的开关特性Switchingcharacteristicsofdiodes负极

Negativeelectrode正极

Positiveelectrode结构：PN结Structure:PNjunctionP区：阳极Pregion:anodeN区：阴极Nregion:cathodePN结PNjunction导通Conduction正向电压（P高、N低）＞导通压降（硅0.7V，锗0.3V），电流从阳极→阴极，等效开关闭合；Forwardvoltage(Pishigh,andNislow)>conductionvoltagedrop(0.7Vforsilicon,0.3Vforgermanium),currentflowsfromanodetocathode,equivalenttoaclosedswitch;结构与开关原理StructureandprincPN负极

Negativeelectrode正极

Positiveelectrode截止CutoffPN结PNjunction电极引线Electrodelead管壳Case反向电压，无电流，等效开关断开。Whenareversevoltageisapplied,nocurrentflows,equivalenttoanopenswitch.二极管的开关特性Switchingcharacteristicsofdiodes等效电路Equivalentcircuit:二极管的开关特性Switchingcharacteristicsofdiodes导通时：可等效为“一个具有导通压降的闭合开关”，如硅二极管导通时等效为一个0.7V的电压源与一个小电阻串联。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止时：等效为“断开的开关”，电阻极大（通常视为无穷大），可近似认为“无电流通过”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".PtypeNtype等效电路Equivalentcircuit:二极管的开关特性Switchingcharacteristicsofdiodes导通时：可等效为“一个具有导通压降的闭合开关”，如硅二极管导通时等效为一个0.7V的电压源与一个小电阻串联。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止时：等效为“断开的开关”，电阻极大（通常视为无穷大），可近似认为“无电流通过”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".InternalelectricfieldPtyperegionSpacechargeregionNtyperegion等效电路Equivalentcircuit:二极管的开关特性Switchingcharacteristicsofdiodes导通时：可等效为“一个具有导通压降的闭合开关”，如硅二极管导通时等效为一个0.7V的电压源与一个小电阻串联。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止时：等效为“断开的开关”，电阻极大（通常视为无穷大），可近似认为“无电流通过”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".开关时间Switchingtime二极管的开关特性Switchingcharacteristicsofdiodes开通时间

Turn-ontime实际二极管的开关切换并非瞬时完成，存在两个关键时间：Theactualswitchingofadiodeisnotinstantaneous.Therearetwocriticaltimes:从截止到导通的时间，通常极短，工程分析中可忽略。Thetimefromcutofftoconduction,whichisusuallyveryshortandcanbeignoredinengineeringanalysis.从导通到截止的时间，相对较长。Reverserecoverytime:Thetimefromconductiontocutoff,whichisrelativelylong.反向恢复时间

Reverserecoverytime注意：反向恢复时间会限制二极管的开关速度，在高频数字电路（如射频信号处理）中需重点考虑。Note:Reverserecoverytimelimitstheswitchingspeedofthediodeandisakeyconsiderationinhigh-frequencydigitalcircuits(suchasRFsignalprocessing).

PtypeNtypePart04三极管的开关特性Switchingcharacteristicsoftransistors结构与工作区域Structureandworkingarea三极管的开关特性SwitchingcharacteristicsoftransistorsCP+nPCEPNP型

PNPType

n-pnENPN型

NPNType

发射极（E）

Emitter

（E）基极（B）

Base

集电极（C）

Collector（C）基本结构Basicstructure以NPN为例

TaketheNPNtypeasanexample两个PN结（发射结：B-E之间；集电结：B-C之间）

TwoPNjunctions(Emitterjunction:betweenbaseandemitter;Collectorjunction:betweenbaseandcollector)NPNBaseb基级bCollectorc集电极cEmitterc发射极cCollectorregion集电区Collectorjunction集电结Baseregion基区Emitterjunction发射结Emitterregion发射区三极管的开关特性Switchingcharacteristicsoftransistors三极管的开关特性Switchingcharacteristicsoftransistors△ic△ib放大区饱和区IB4IB3IB2IB4IB=0UCEUCE截止区截止区​：Cutoffregion:工作条件：OperatingConditions:发射结反偏（B电位<E电位）Emitterjunctionreversebiased(Bpotential<Epotential)集电结反偏（B电位<C电位）Collectorjunctionreversebiased(Bpotential<Cpotential)集电极电流Ic≈0，C-E之间电阻极大，相当于“开关断开”，输出高电平。CollectorcurrentIc≈0,andtheresistancebetweenCandEisextremelylarge,equivalenttoa“openswitch“,resultinginahighoutputlevel.​特点CharacteristicsSaturationregionCutoffregionAmplificationregion三极管的开关特性Switchingcharacteristicsoftransistors饱和区​：SaturationRegion:工作条件：OperatingConditions:发射结正偏（B电位>E电位，且电压>0.7V）Emitterjunctionforwardbiased(Bpotential>Epotential,andvoltage>0.7V)集电结正偏（B电位>C电位）Collectorjunctionforwardbiased(Bpotential>Cpotential)C-E之间电压极小（饱和压降Uces≈0.3V），电阻极小，相当于“开关闭合”，输出低电平。ThevoltagebetweenCandEisextremelysmall(saturationvoltagedropUces≈0.3V),andtheresistanceisextremelylow,equivalenttoa"closedswitch"withalowoutput.特点CharacteristicsSaturationregionCutoffregionAmplificationregion三极管的开关特性Switchingcharacteristicsoftransistors电流关系与控制Currentrelationshipandcontrol公式

FormulaIe=Ib+Ic（发射极电流=基极电流+集电极电流）。(Emittercurrent=basecurrent+thecollectorcurrent)控制核心

Keyofcontrolling改变Ib，切换截止/饱和状态。ChangeIbtoswitchesthecutoff/saturationstate.ceb+RIcIevIb△ic△ib放大区饱和区IB4IB3IB2IB4IB=0UCEUCE截止区三极管的开关特性Switchingcharacteristicsoftransistors开关时间Switchingtime开启时间（ton）

Turn-ontime截止→饱和的时间

timeofcutofftosaturation

关断时间（toff）

Turn-offtime饱和→截止的时间

timeofsaturationtocutoff

SaturationregionCutoffregionAmplificationregion三极管的开关特性Switchingcharacteristicsoftransistors开关时间Switchingtime开启时间（ton）

Turn-ontime截止→饱和的时间

timeofcutofftosaturation

关断时间（toff）

Turn-offtime饱和→截止的时间

timeofsaturationtocutoff

关断时间通常大于开启时间，且三极管饱和程度越深（Ib越大），存储时间越长，关断速度越慢，设计时需避免过度饱和。Theturn-offtimeisusuallylongerthantheturn-ontime,andthedeeperthetransistorsaturation(thelargerIb),thelongerthestoragetimeandtheslowertheturn-offspeed.Over-saturationshouldbeavoidedduringdesign.SaturationregionCutoffregionAmplificationregionPart05案例分析

CaseStudy

基于二极管与三极管的逻辑门

Logicgatesbasedondiodesandtransistors

电路结构

Circuitstructure

二极管D1、D2的阳极分别接输入信号A、B，阴极共同连接输出端Y，输出端通过电阻R接电源Vcc。TheanodesofdiodesD1andD2areconnectedtoinputsignalsAandBrespectively,andtheircathodesareconnectedtotheoutputterminalY.TheoutputterminalisconnectedtothepowersupplyVccthroughresistorR.案例分析CaseStudy二极管与门

DiodeANDGate

基于二极管与三极管的逻辑门

Logicgatesbasedondiodesandtransistors

案例分析CaseStudy二极管与门

DiodeANDGate

A、B均高电平→二极管截止，Y高电平；WhenbothAandBareathighlevel,bothdiodesareturnedoff,andYoutputsahighlevel.其余输入→二极管导通，Y低电平（硅0.7V），实现“与”逻辑。Forallotherinputcombinations,oneofthediodesalwaysconducts,clampingYtoalowlevel(about0.7Vforasilicondiode),whichimplementsANDlogic.逻辑功能分析：

sLogicalfunctionanalysis:

结论：只有A、B均为高电平时，Y才为高电平，实现“与”逻辑（Y=A・B）

Conclusion:OnlywhenAandBarebothathighlevel,Yisathighlevel,realizingthe"AND"logic(Y=A・B)三极管构成的“非门”电路

"NOTgate"circuitcomposedoftransistors

案例分析CaseStudy三极管非门

TransistorNOTGate

电路结构

Circuitstructure

NPN型三极管的基极通过电阻Rb接输入信号A，集电极通过电阻Rc接电源Vcc（5V），发射极接地（0V），输出信号Y取自集电极（C极）。ThebaseoftheNPNtransistorisconnectedtotheinputsignalAthroughresistorRb,thecollectorisconnectedtothepowersupplyVcc(5V)throughresistorRc,theemitterisgrounded(0V),andtheoutputsignalYistakenfromthecollector(Cpole).三极管构成的“非门”电路

"NOTgate"circuitcomposedoftransistors

案例分析CaseStudy三极管非门

TransistorNOTGate

A低电平→三极管截止，Y高电平；WhenAisatlowlevel,thetransistorisinthecut-offstateandYoutputsahighlevel;A高电平→三极管饱和，Y低电平，实现“非”逻辑。WhenAisatahighlevel,thetransistorisinsaturatedstate,andYoutputsalowlevel,completingthe"not"logicfunction.逻辑功能分析：

sLogicalfunctionanalysis:

结论：当A为高电平时，三极管饱和导通，Y输出低电平，完成"非"逻辑功能。

Conclusion:WhenAisathighlevel,thetransistorissaturatedandconductive,Youtputsalowlevel,completingthe"not"logicfunction.教学重点梳理

Keypointsofteaching二极管开关特性

Switchingcharacteristicsofdiodes正向导通/反向截止原理Principlesofforwardconductionandreversecutoff导通压降、开关时间影响Effectsofconductionvoltagedropandswitchingtime.三极管开关特性Switchingcharacteristicsoftransistors截止区/饱和区工作状态

workingconditionsinthecut-offregionandthesaturationregionIb对Ic的控制

ControleffectoftheIbonIc开关时间特点Characteristicsoftheswitchingtime

电路分析能力Circuitanalysiscapabilities:跟据元件连接、输入信号，判断工作状态，分析输出。Judgetheworkingstatus,andanalyzetheoutputbasedontheconnectionandinputsignal.职业岗位应用

Applicationofjobs

电路测试工程师

Circuittestengineer应用场景：检测数字电路故障（如逻辑门输出异常、芯片功能失效）。

Applications:Detectingdigitalcircuitfaults(suchasabnormallogicgateoutputandchipmalfunction).工作内容：依据二极管、三极管的开关特性原理，通过测量电压、电流等参数来判断元件是否正常工作。Responsibilities:Basedontheswitchingcharacteristicsofdiodesandtransistors,measureparameterssuchasvoltageandcurrenttodeterminewhethercomponentsarefunctioningproperly.职业岗位应用

Applicationofjobs

集成电路设计工程师

Integratedcircuitdesignengineer应用场景：设计数字芯片（如CPU、内存、逻辑芯片）。

Applications:Designofdigitalchips(suchasCPUs,memory,andlogicchips).工作内容：精确控制二极管和三极管的特性参数，以提高芯片的性能和可靠性。

Responsibilities:Preciselycontrolthecharacteristicp