《电子技术（双语）》课件-基石之困与自强之路：半导体材料与器件的探索

基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevices基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevicesTeacher:JiaLisi授课教师：贾丽斯数字技术深度融入生活Digitaltechnologyhasbeendeeplyintegratedintopeople’slives半导体器件

Semiconductordevices

数字电子技术的基石

Cornerstoneofdigitalelectronictechnology基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevicesPart01半导体器件基础

Semiconductordevicefundamentals

二极管的关键特性

Keycharacteristicsofdiodes半导体，介于导体与绝缘体之间，其独特的电学特性使其成为现代电子技术的关键材料。Semiconductors,whicharebetweenconductorsandinsulators,haveuniqueelectricalpropertiesthatmakethemakeymaterialinmodernelectronictechnology.半导体器件基础Semiconductordevicefundamentals

半导体常见材料

Commonsemiconductormaterials

硅（Si）

Silicon(Si)锗（Ge）

Germanium(Ge)半导体器件基础Semiconductordevicefundamentals

PN结形成关键

KeytoPNjunctionformation

P型半导体：空穴多（⊕），电子少。

P-typesemiconductor:therearemoreholes(⊕)andfewerelectrons.

N型半导体：电子多（⊙），空穴少。

N-typesemiconductor:therearemoreelectrons(⊙)andfewerholes.当在纯净的半导体中加入微量的特定杂质，就形成了P型半导体和N型半导体。Whenasmallamountofspecificimpuritiesareaddedtoapuresemiconductor,P-typesemiconductorsandN-typesemiconductorsareformed.NtyperegionPtypeNtypePtyperegionSpacechargeregionInternalelectricfield半导体器件基础Semiconductordevicefundamentals

PN结形成关键

KeytoPNjunctionformation

P型半导体：空穴多（⊕），电子少。

P-typesemiconductor:therearemoreholes(⊕)andfewerelectrons.

N型半导体：电子多（⊙），空穴少。

N-typesemiconductor:therearemoreelectrons(⊙)andfewerholes.InternalelectricfieldPN结结构示意图

SchematicdiagramofPNjunctionstructure

PN半导体器件的核心结构Corestructureofsemiconductordevices半导体器件基础Semiconductordevicefundamentals

PN结与器件原理

PNjunctionanddeviceprinciple

PN结具有单向导电性ThePNjunctionhasunidirectionalconductivity.当外加正向电压时，PN结导通，电流能够顺利通过；

Whenaforwardvoltageisapplied,thePNjunctionisconductiveandcurrentcanpasssmoothly.ExternalelectricfieldInternalelectricfielda）正向偏置Forwardbias当外加反向电压时，PN结截止，电流几乎无法通过。

Whenareversevoltageisapplied,thePNjunctioniscutoffandcurrentcanhardlypassthrough.半导体器件基础Semiconductordevicefundamentals

二极管

Diodes三极管(Ge)Transistor半导体器件基础Semiconductordevicefundamentals

整流电路Rectificationcircuits检波电路Detectioncircuits检波电路Detectioncircuits二极管

Diodes半导体器件基础Semiconductordevicefundamentals

三极管(Ge)Transistor放大电路Amplifiercircuits

开关电路

Switchingcircuits电流放大作用

Functionofcurrentamplification半导体器件基础Semiconductordevicefundamentals

交流电

AC

直流电

DC

二极管diodes半导体器件基础Semiconductordevicefundamentals

Part02国产芯片突破之路

Theroadtobreakthroughfordomesticchips基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevices素材来源：央视网2020年09月02日国产芯片突破之路Theroadtobreakthroughfordomesticchips

北斗芯片Beidouchips北斗芯片自主可控

Beidouchipsareindependentlycontrollable

素材来源：央视网2020年09月02日北斗芯片自主可控

Beidouchipsareindependentlycontrollable

早期，我国在卫星导航芯片领域依赖进口，不仅成本高昂，而且存在安全隐患。为了实现北斗系统的自主可控，科研人员经过多年攻关，成功研制出具有完全自主知识产权的北斗芯片。Intheearlydays,Chinareliedonimportsinthefieldofsatellitenavigationchips,whichwasnotonlycostlybutalsoposedsafetyrisks.InordertoachieveindependentcontroloftheBeidousystem,scientificresearchershavesuccessfullydevelopedaBeidouchipwithcompletelyindependentintellectualpropertyrightsafteryearsofresearch.国产芯片突破之路Theroadtobreakthroughfordomesticchips

北斗芯片自主可控

Beidouchipsareindependentlycontrollable

精度

Accuracy

功耗

Powerconsumption

抗干扰能力

Anti-interferencecapability

为北斗卫星导航系统应用奠定基础

LayingasolidfoundationforthewidespreadapplicationoftheBeidousatellitenavigationsystem国产芯片突破之路Theroadtobreakthroughfordomesticchips

北斗芯片自主可控

Beidouchipsareindependentlycontrollable

国产芯片突破之路Theroadtobreakthroughfordomesticchips

交通运输

Transportation

农业

Agriculture渔业

Fishery

测绘

Surveyingandmapping

华为海思突围之路

HuaweiHiSilicon'sroadtobreakthrough华为海思芯片设计力量HuaweiHiSiliconchipdesignstrengthTSA80601TSA80602AK6002

华为海思在芯片设计领域的成就举世瞩目。面对外部的技术制裁，华为海思凭借长期以来在研发上的巨大投入和技术积累，成功推出了一系列高性能芯片。HuaweiHiSilicon'sachievementsinchipdesignhaveattractedworldwideattention.Inthefaceofexternaltechnologicalsanctions,HuaweiHiSiliconhassuccessfullylaunchedaseriesofhigh-performancechips,suchastheKirinseriesofmobilephonechips华为海思突围之路

HuaweiHiSilicon'sroadtobreakthrough华为海思芯片设计力量HuaweiHiSiliconchipdesignstrength性能

Performance图像处理

Imageprocessing人工智能运算

Artificialintelligencecomputing麒麟芯片

Kirinchips

强大竞争力

Strongcompetitiveness华为海思突围之路

HuaweiHiSilicon'sroadtobreakthrough华为海思芯片设计力量HuaweiHiSiliconchipdesignstrength企业的胜利

Victoryforacompany芯片设计产业重大突破

Breakthroughforchipdesignindustry基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevices中国数字技术发展历程

HistoryofthedevelopmentofdigitaltechnologyinChina

基石之困与自强之路：半导体材料与器件的探索Thedilemmaofthecornerstoneandthepathtoself-strengthening:explorationofsemiconductormaterialsanddevices新中国成立初期

EarlydaysofthePeople'sRepublicofChina

现阶段

TodayPart03中国数字技术发展史

HistoryofthedevelopmentofdigitaltechnologyinChina早期探索（半导体技术起步）

Earlyexploration(startingofsemiconductortechnology)

中国数字技术发展史HistoryofthedevelopmentofdigitaltechnologyinChina应用物理所半导体研究室一角

AcorneroftheSemiconductorLaboratoryoftheInstituteofAppliedPhysics

在早期，为了满足国家对计算机等电子设备的需求，我国科研人员开始了对半导体技术的探索。Earlyon,Chineseresearchersbeganexploringsemiconductortechnologytomeetthenation'sgrowingdemandforcomputersandotherelectronicequipment.早期探索（半导体技术起步）

Earlyexploration(startingofsemiconductortechnology)

中国数字技术发展史HistoryofthedevelopmentofdigitaltechnologyinChina第一根硅单晶Thefirstsiliconsinglecrystal1956年，发展半导体技术成为我国“四大紧急措施”之一，众多海外科学家纷纷回国，带来了宝贵的技术和经验。在艰苦的条件下，我国科研人员先后研制出了锗合金扩散高频晶体管、硅平面型晶体管等关键半导体器件，为我国电子计算机的发展提供了重要支撑。In1956,developingsemiconductortechnologybecameoneofChina's"FourUrgentMeasures",promptingnumerousoverseasscientiststoreturn,bringingvaluableexpertiseandexperience.Underdifficultconditions,Chineseresearchershavesuccessivelydevelopedkeysemiconductordevicessuchasgermaniumalloydiffusedhigh-frequencytransistorsandsiliconplanartransistors,providingimportantsupportforthedevelopmentofChina'selectroniccomputers.早期探索（半导体技术起步）

Earlyexploration(startingofsemiconductortechnology)

中国数字技术发展史HistoryofthedevelopmentofdigitaltechnologyinChina1956年，发展半导体技术成为我国“四大紧急措施”之一，众多海外科学家纷纷回国，带来了宝贵的技术和经验。在艰苦的条件下，我国科研人员先后研制出了锗合金扩散高频晶体管、硅平面型晶体管等关键半导体器件，为我国电子计算机的发展提供了重要支撑。In1956,developingsemiconductortechnologybecameoneofChina's"FourUrgentMeasures",promptingnumerousoverseasscientiststoreturn,bringingvaluableexpertiseandexperience.Underdifficultconditions,Chineseresearchershavesuccessivelydevelopedkeysemiconductordevicessuchasgermaniumalloydiffusedhigh-frequencytransistorsandsiliconplanartransistors,providingimportantsupportforthedevelopmentofChina'selectroniccomputers.1958年半导体室研制的我国第一批晶体管ThefirstbatchoftransistorsdevelopedbytheSemiconductorLaboratoryofChinain1958中国数字技术发展史HistoryofthedevelopmentofdigitaltechnologyinChina产业升级与技术突破

Industrialupgradingandtechnologicalbreakthroughs通信

communications

计算机

computers

消费电子

consumerelectronics中国数字技术发展史HistoryofthedevelopmentofdigitaltechnologyinChina产业升级与技术突破

Industrialupgradingandtechnologicalbreakthroughs

如今，我国在5G通信、人工智能、大数据等数字技术前沿领域取得了显著成就，成为推动全球数字技术发展的重要力量。Today,Chinahasmaderemarkableachievementsincutting-edgedigitaltechnologyfieldssuchas5Gcommunications,artificialintelligence,andbigdata,becominganimportantforceinpromotingthedevelopmentofglobaldigitaltechnology.Part04未来职业岗位应用

Applicationoffuturejobs核心知识与技能方向Coreknowledgeandskillsdirection

职业岗位Careerpositions电子工程师ElectronicsEngineer芯片设计师ChipDesigner系统集成工程师SystemIntegrator职业岗位事半导体器件研发SemiconductordeviceresearchanddevelopmentCareerpositions芯片设计制造Chip