教授硅基光电子芯片极其应用扩展

硅基光电子芯片及其应用扩展.北京大学.edu名家芯思维-硅基光电子集成技术和应用2018年07月21日.

南京新华传媒粤海国际大酒店1提纲一、SPM实验室和硅基光电子学二、关键科学问题和主要研究内容三、国际最新进展、发展趋势四、可能取得的重大进展和重要应用前景234SPMteamatPKU,May,2018ResearchFunding:

MOST

programs

(973,

863,

SKL),

NSFCprograms

(International,

Major,

General),Provincial

programs,

and

Industrial

programs

(Huawei,ZTE,

Delta…)

.Collaborators:

MIT,

Stanford,

CalTech,

GaTech,

University

of

Southampton,

University

of

Tokyo,

…5Research

GoalsTodevelop

thenextgeneration

ofpactlyintegrated,

lowcost,lowenergy,

optoelectronicsystemsthatmay

beusedforhigh-densitydatamunications

andrealtimesensing/detection.Research

TopicsSiliconPhotonicsandMicrosystems

Light

Sources,

Modulators,

and

DetectorsSub-welength

Grating

Devices,

Beam

Splitters,

and

RotatorsPhotonicCrystal

Devices,

Surface

Plasmonic

DevicesIntegrated

Optical

Sensors,

Integratedmunication

Systems6硅基光电子学是探讨微米/纳米级光子、电子、及光电子器件的新颖工作原理，并使用与硅基集成电路技术兼容的技术和方法，将它们集成在同一硅衬底上的一门科学。7硅基光电芯片Light

SourceLight

GuidingIntegrationLight

ModulationLight

Detection光电子器件的硅基化及大规模集成8Interconnection

for

Data

Transmissions9硅基光电子芯片：换道超车的核心技术10提纲一、SPM实验室和硅基光电子学二、关键科学问题和主要研究内容三、国际最新进展、发展趋势四、可能取得的重大进展和重要应用前景11关键科学问题1.提高发光效率2.增强电光效应3.扩展应用波长4.降低系统能耗5.片上异质集成12主要研究内容基础理论衍射和纳米光学,近场光学,纳电子学，量子电子学,硅基光电子学等基本器件三维和二维纳米波导器件,高性能微光源/探测器阵列器件,

微纳有源/无源器件，相关微纳电子器件等集成器件与系统集成光电传感系统,芯片之间的高速光互连,集成波长转换器，芯片级光通讯系统,

芯片级生物探测系统等工艺及集成技术现有微电子集成技术及工艺，纳米技术/纳米工程范筹内光电子器件的工艺及集成技术，两者相互集成13主要研究内容

微纳米范围之内的光电相互作用及影响

微纳范围内光-光，光-热、光-机，光-磁，光-生化等的传感行为

微纳光电器件的计算机模拟

微纳光电器件的耦合

微纳传感器件的集成

微弱信号的探测与放大

微纳薄膜技术光电Photonics

Electronics

CMOS工艺（纳米光刻,

聚焦离子束加工,高精度等离子体工艺..）＞14Siliconbasedon-chip

lasersDesirableon-chip

lasers

foroptoelectronic

integrationEmitting@1310

or

1550

nm

Electrically

pumpedlaser

CMOSprocesspatibleCandidates

Er-related

light

sourceGe-on-SilaserIII-V-based

SilaserWorkingmechanismUsingEras

an

atomicemitting

centerEnhanceemitting

efficiencyviabandgap

engineeringUsingIII-V

materialasgainmediumSiOx:Er;SiNx:Er;ErsilicatesInAlGaAs

QW;InGaAsP

QW

;InAs/GaAs

QDGainmaterialGe;GeSnalloyLarge

gainspectrum;Material

and

processpatibility

with

Sitechnology;CMOSpatiblefabrication

process;Welength

stabilityHighgain

andoutputoptical

power;Goodstructure

designflexibilityAdvantageChallengeLowELefficiency;Obtain

netgainGematerials

quality;Ultrahigh

threshold

currentFabricationpatibility;cost

reductionZ.Zhouet

al,“On-chip

lightsources

for

silicon

photonics”,

Light:

Science

&

Applications

(2015)

4,

e358.15EnergyConsumptionZ.

Zhou,

et

al,

"Lowering

the

energy

consumption

in

silicon

photonicdevices

and

systems,"

Photonics

Research3,B28-B46

(2015).Reviews

currentoptical

linkperformance

in

termsofenergyandinsertion

lossProposesmethods

fordevice-leveloptical

link

energyreduction

andinsights

into

on-chip

lasers16100Gb/sSi-basedopticalcoherenttransceiverchips（a）X偏振态（b）Y偏振态100Gb/s

发射信号传输106Km后星座图I路Q路DSP处理后的100Gb/s接收信号星座图Z.

Tu,

P.

Gong,

Z.

Zhou,

X.Wang,

JapaneseJournalof

Applied

Physics55(4S),

04EC04,201617Lowenergy

consumption

siliconoptical

modulatorAplete

analytical

theory,

energy

consumption

analysis,

and

eye

diagrams

onabsolute

scales

forlumped

modulators.

The

resultsshow

thatsilicon

modulationenergy

aslow

as80.8and

21.5fJ∕bitcanbeachieved

at28Gbdunder

50and

10Ωimpedance

drivers,respectively.

A50Gbdmodulation

isalso

shown

tobepossible.X.

Li,et

al,Photon.

Res.Vol.

5,

Issue

2,

pp.134-142

(2017).18Athermal

filterAthermal

filter:

The

athermal

performance

has

beenmeasured

to

be

~

-5

pm/K

while

the

minimum

insertion

loss

isonly

0.4

dBwith

adevice

dimension

of

170

mm×580m

m.Q.

Deng,

L.

Liu,R.

Zhang,

X.Li,

J.Michel,andZ.

Zhou,

Opt.

Express

24,

29577-29582(2016)19On-chip

plasmonic

weguide

optical

weplateDesign

and

fabrication(a)

3D

view

of

the

polarization

rotating

device

integrated

in-line

withastandardSiwire

weguide

of

400

nm

width

and

250

nm

height.

(b)

Polarization

rotationsegment

integrated

at

the

output

end

of

alaser

to

generate

circular

polarization.(d)

Scanning

electron

micrograph

(SEM)

showing

the

devicein-line

integratedwitha

Siwire

weguide.L.

Gao,Y.

Huo,

K.Zang,

S.

Paik,

Y.

Chen,

J.Harris,

andZ.

Zhou,

Sci.

Rep.

5,15794,

(2015).20On-chip

plasmonic

weguide

optical

weplateCircular

TM45°LinearSimulation:(a)

Magnetic

fieldprofiles

of

thetwo

eigenmodes

when

θ

ofthe

firsteigenmode

is45°and

22.5°.

(b,c)

Eyand

Ezdistribution

along

xysurface,and

wm

is140

nm

(b)

and

200

nm(c).L.

Gao,Y.

Huo,

K.Zang,

S.

Paik,

Y.

Chen,

J.Harris,

andZ.

Zhou,

Sci.

Rep.5,15794,

(2015).21Polarization-independent

directional

coupler

(PIDC)The

beat

lengths

for

TE

and

TM

mode

are

tailored

to

be

equal

bythe

refractive

index

engineering

of

the

subwelength

grating

(SWG),leading

to

a

polarization-independent

directional

coupler

(PIDC).pared

to

other

schemes,

this

SWG

based

one

ispact,

CMOSpatible,

andis

thefirstexperiment

result

ofPIDC.

SWG

DCL

Horizontal

slot

DC

2

nnoddevenfootprintHybrid

plasmonic

DCpatibilityEquivalent

homogeneousmediumEffective

refractive

indexengineeringL.Liu,

Q.Deng

and

Z.

Zhou,

Opt.Lett.

41,

1648

(2016).22Lowinsertionloss

(TE:0.11dB,

TM:0.15dB）Lesspolarization

sensitivity(CE

difference

0.04dB)Broadbandwidth(0.5dB

bandwidth>45nm)Shortlength(8.4μm),

minimum

feature

size100nm，easy

tofabricateThefirst

experimental

resultofaON-CHIP

polarization

independentDCSilicon

photonicsµsystemlab23Polarizationbeam

splitter(PBS)The

beat

length

for

TE

mode

shrinks

20-fold

by

the

refractiveindex

engineering

of

the

subwelength

grating

(SWG),

half

that

ofTM

mode,

leading

to

a

high

extinction

ratio

(ER).

Meanwhile,

Thedispersion

engineering

of

SWG

releases

the

welength

dependencegreatly.

Finally,

high

ER

(20

dB)

and

broad

bandwidth

(>100

nm)

arerealized

simultaneously,whichisdifficultforconventional

PBSs.L.Liu,

Q.Deng

and

Z.

Zhou,

Opt.Lett.

41,

5126

(2016).24ArbitrarysplittingratioMMI

powersplitter

Characteristics:

Arbitrary

splitting

ratio：100:0

~50:50；

Smallfootprint：1.5

μm×1.8–2.8

μm；

Broadband：Splitting

ratio

variation

<2%(1520-1580

nm)

Low

excess

loss

(<0.5dB)：parable

toconventionalMMI.Q.Deng,L.Liu,

X.

Li,

andZ.Zhou,Opt.

Lett.

39,5590

(2014)25Strip-slot

weguide

converterPerformance:

Strip-slotweguide

coupling

thoughthismodeconverterhasa

measured

efficiency

of97%(−0.13dB)

for

awelength

rangeof130

nm(1450–1580

nm).

,andthedimensions

areassmall

as1.24μm

×6μm.Q.Deng,

L.Liu,X.Li,andZ.Zhou,

Opt.

Lett.39,

5665

(2014).26提纲一、SPM实验室和硅基光电子学二、关键科学问题和主要研究内容三、国际最新进展、发展趋势四、可能取得的重大进展和重要应用前景27国际最新进展1、ISPEC

2017Worldclass

conferenceinsiliconphotonics,photonicsand

electronicsconvergence,

baseballsizedatacenter;

Speakersfromalloverthe

world…2、OFC

2017SiliconPhotonics

andSiliconPhotonics

Modulatorssessions,42

appearsintheprogram

abstracts3、IEDM

2017ODIsumittee,

Tutorial,session,

andspecialsession28OFC

2018:

Silicon

PhotonicsOFC

Milestone:

In

its

40th

Anniversary

in2015,developmentsin

Internet

ofThings

(IoT),

siliconphotonics

and

SDN

drive

discussions

inconference

and

onexhibit

floorMore

Silicon

Photonics

ProductsThe

Silicon

Photonics

Integration

is

getting

better:smaller

package

and

higher

data

rateA

128

Gb/s

PAM4

Silicon

Microring

Modulator(Intel

PDP

paper)29DatacenterOptical

Interconnects

8channel,448Gbit/s

PAM-4

transmitter

over

2kmMulti-chip

moduleassembly:

8trelling

wecarrier-depletion

Mach-Zehdermodulators.

8horizontal-city

surface-emitting

lasers

(HCSEL).

8single-modefibers

(SMFs)

connected

withphotonic

wirebonds(PWBs).Thisisthe

highestchannelcount

andthe

highestdatarate

demonstratedbyan

opticalpackaged

siliconphotonic

transmittermodulewithco-integrated

lasers

todate.Billah,

Muhammad

Rodlin,et

al.

"8-Channel

448Gbit/ssiliconphotonictransmitter

enabled

byphotonicwirebonding."

Optical

Fibermunication

Conference.

Optical

Society

of

America,

2017.From:

Karlsruhe

Institute

ofTechnology

(KIT)MetroInterconnects

200Gbit/s

transmitter

OneQDL,

alinear

fourchannel

driverandfourmicroringmodulators.

Real-time

200Gbit/s(4x56.26Gbit/s)DWDM

PAM-4

transmissionover80-kmSMF.

ErrorfreeoperationwithaHD-FECthreshold<

1E-3.Thisisthe

longestdistance

andhighestbinedringmodulateddata

rateforPAM-4,positioning

theproposedsolutionasanattractivecandidate

for400Gmultiwelengthtransceivers

(bybiningtwofourchannel

sub-assemblies)andenabling

datacenterlinkswith>4

Tb/s

linkcapacityEiselt,

Nicklas,

et

al.

"Real-time

200Gb/s

(4×56.25Gb/s)PAM-4

transmissionover80km

SSMF

usingquantum-dot

laserand

siliconring-modulator."

Optical

Fibermunications

Conference

andExhibition

(OFC),

2017.IEEE,

2017.From:

ADVA

Optical

NetworkingOptical

Access

Network

40Gbit/s

silicon

photonicsFTTHtransceiverTransceiver

configuration:

One1550nmCW

lasersplitto4

channels

bycascaded1x2MMIs.

Anarray

ofIII-V

O-band

photodetectors

(PDs)wasintegrated.

Theintegration

wasrealized

throughbonding

technology.Inordertokeepsizeandpowerconsumptionofaccess

network,therealization

ofintegrated,lowcost

andlowpowerconsumptiontransceiver

isofparamountimportance.

Siliconphotonicsisapromisingway.Zhang

J,

DeGroote

A,

Abbasi

A,et

al.

Siliconphotonics

fiber-to-the-home

transceiver

array

based

ontransfer-printing-based

integrationofIII-V

photodetectors[J].OpticsExpress,2017,25(13):

14290-14299.From:

GhentUniversity

–imecOpticalnetworkon

chipFabrication:

Specialized

but

CMOSpatible

fabrication

process.Integration:

All

photonic

devices,

including

lasers,

modulators,

Mux/DeMux,photodetectors

etc.Density:

8×8×40

Gb/s.C.Zhang,

S.

Zhang,

J.D.Peters,

andJ.E.Bowers,

Optica3,785(2016).33发展趋势1.更多基础研究：片上/片下光源，线性/非线性器件，节能机理，器件小型化2.更高传输速率：单通道100G，coherent

orWDMPAM-4200G，400G，…3.更大规模片上集成：零改变CMOS工艺，45纳米工艺，异质集成4.更多厂商加入：完善的产业链，覆盖短途和长距34提纲一、SPM实验室和硅基光电子学二、关键科学问题和主要研究内容三、国际最新进展、发展趋势四、可能取得的重大进展和重要应用前景35硅基光电子的早期应用领域高速计算机网络硅基光电子技术能够有效解决大数据时代面临的问题：

高速通讯

海量数据高速通信网络高速物联网36基于硅基光电子技术的数据中心37Optical

Phase

Arrays2Dimaging

OPAsRecordArray

Scale

:64x64ord

active

pixel：9

μm

x9μmFully

integrated

hybrid

2DOPAchipSun

J,

Timurdogan

E,Yaacobi

A,

et

al.Nature,20132Dbeam

steering

OPAs

(grating

weguides

array)Integratinghybridtunable

laser,SOA,MMI,EOphaseshifters,

gratingarray,

photodiodeson

asingle

chipChannel

Num

:128Sweeping

angle

:51°Resolvablepoints

:≥60,000Beam

widthDivergence

:0.14°Hulme,

J.

C.,et

al.Opticsexpress

2015.Hutchison,

DidN.,et

al.Optica,2016.38Quantum

Photonics:

Bulk

→integratedSilicon

photonics

has

the

potential

to

achieveon-chip

quantum

photonic

system

with

allponents

integrated.integrated

siliconquantum

photonics:i.pump

inputandsplitter,

ix.MMI

coupler,ii~iii.

photon-pairsource,

x.weguide

crossing,~v.

pump

removal

filter,

xi.single-photon

detector,arXiv:1006.4743v1~vii.

WDM,xii.Grating

coupler,ii.

thermal

phase

tuner,xiii.

control

andlogicIC.IEEE

J.QuantumElect.

22,6700113

(2016).39Metamaterial-inspired

SiliconPhotonicsMetamaterials

are

engineered

structuresdesigned

to

interact

with

EM

field

ina

desired

fashion.

Silicon

metamaterials

emerged

popular

for

high

refractiveindex,

low

loss

and

the

optical

properties

can

be

tailored

very

effectively

andflexiblyby

thismicro-control.1.Silicon

Metasurfaces：•

2Dnanostructures;•

light

is

at

normal

or

near-normalincidence

to

the

nanostructuredsurface)2.Bulk

Silicon

Metamaterials：•

1/2/3D

nanostructures;•

light

is

along

the

directions

inwhich

the

building

blocks

arearranged)I.Staude

and

J.Schilling,

Nat.Photonics

11,5(2017).（g,h）SiliconMetasurfaces

(i-l)

Bulk

Silicon

MetamaterialsSilicon

Photonics

for

MID-IRThermal-optical

modulators

inThermal-optical

modulators

inGe-on-Si

at5

μmSOI

at3.8

μmMalik

A,DwivediS,Van

Landschoot

L,et

al.Opticsexpress,22,

23,

28479-28488(2014).Nedeljkovic

M,

Stankovic

S,Mitchell

CJ,etal.

IEEEPhoton.

Technol.

Lett.,2014,

26(13):

1352-1355.Electro-optical

modulators

inElectro-optical

modulators

inGeOI

at

2μmGe-on-Si

at3.8

μmKang

J,Takenaka

M,TakagiS.OpticsExpress,2016,24(11):

11855-11864.TiantianL,

NedeljkovicM,Nannicha

H,etal.International

Coferenceon

Group

IVPhotonics,

2017.41Microring

SensorResonance

enhancedsensingAnalyte2πRneff=mλ

s

,

Is

,SENSITIVITY:OR

nc

nc42Basic

microringsensoroptimizationMaximalSensivitity:

transmissioncoefficientσapproaches

unity

self

coupling

coefficienttequals

σ2Z.Xia,

Y.

Chen,

andZ.Zhou,

IEEEJ.Quant.

Electron.,

44(1),

100-107,

2008.43Multi-resonancemicroringsensor

Vernier

Effect

inthe

resonance

shift

Large

overlap-resonance

shift

Largedynamic

range

HighSensitivity(λshift

0.31nmfor10-6RIU)H.

Yi,

D.

S.

Citrin,Y.

Chen,

andZ.

Zhou,

Appl.

Phys.

Lett.,

95,191112,

2009.44Fanoresonance

singlemicroringsensorFano

resonance

Dual-resonance

coupling

Asymmetricresonance

SOImicroring----sharpslope

HighSensitivity

(10-8RIU

atQ=104)H.

Yi,

D.S.

Citrin,

andZ.Zhou,

Opt.

Expr.,

18(3),

2967-2972,

2010.45Coupling-induced

microringsensorAnalyteaffect

thecouplingelement

!vvRMRRMRTypeⅠTypeⅡ

Microring

enhancedcoupling

elementCoupling

coefficient

change

Output

intensity

change

Noultra-narrow

lightsourceneeded

High

sensitivity

~10-8RIUH.

Yi,

D.

S.

Citrin,

andZ.Zhou,

J.

Society

Americ.

B.,

28(7),

1611-1615,

2011.46Athermal

OpticalSensor

Spectrum

shift(Temperature

induced)

Extinction

rationchange

(Designedmodulation

induced)Thermal-induced

changeAnalyte-induced

changeH.

Yi,

D.S.

Citrin,

andZ.Zhou,

IEEEJ.Quant.

Electron.,