【石墨相氮化碳（g-C3N4）的概述3700字】

石墨相氮化碳（g-C3N4）的概述目录TOC\o"1-3"\h\u16825石墨相氮化碳（g-C3N4）的概述 图1-3），通过类比不同种类的溶剂条件，以及不同反应温度下对棒状纳米结构g-C3N4光催化分解水和光催化降解有机染料的催化应用性能进行探究。图1-SEQ图1-\*ARABIC3g-C3N4纳米棒的SEM(a)和TEM(b)ADDINEN.CITE<EndNote><Cite><Author>Cui</Author><Year>2012</Year><RecNum>234</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[36]</style></DisplayText><record><rec-number>234</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617886153">234</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Cui,YJ</author><author>Ding,ZX</author><author>Fu,XZ</author><author>etal</author></authors></contributors><titles><title>Constructionofconjugatedcarbonnitridenanoarchitecturesinsolutionatlowtemperaturesforphotoredoxcatalysis</title><secondary-title>Angew.Chem.Int.Ed</secondary-title></titles><periodical><full-title>Angew.Chem.Int.Ed</full-title></periodical><pages>11814-11818</pages><volume>51</volume><number>47</number><dates><year>2012</year></dates><urls></urls></record></Cite></EndNote>[36]Figure1-3SEM(a)andTEM(b)imagesofg-C3N4nanorods热聚合法热聚合法是由反应单体高温产生的自由基直接进行聚合的制造工艺之一。在目前的社会中，实验室以及工业生产方面均通过热聚合法制备各式各样的材料，比如制备g-C3N4基催化剂时利用热聚合法就可以非常简便的获得ADDINEN.CITE<EndNote><Cite><Author>Nadtochenko</Author><Year>2006</Year><RecNum>41</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[28,37]</style></DisplayText><record><rec-number>41</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639818">41</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Nadtochenko,V.</author><author>Denisov,N.</author><author>Sarkisov,O.</author><author>Gumy,D.</author><author>Pulgarin,C.</author><author>Kiwi,J.</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">LaserkineticspectroscopyoftheinterfacialchargetransferbetweenmembranecellwallsofE.coliandTiO</style><styleface="subscript"font="default"size="100%">2</style></title><secondary-title>JournalofPhotochemistry&PhotobiologyAChemistry</secondary-title></titles><periodical><full-title>JournalofPhotochemistry&PhotobiologyAChemistry</full-title></periodical><pages>401-407</pages><volume>181</volume><number>2</number><dates><year>2006</year></dates><urls></urls></record></Cite><Cite><Author>Yong</Author><Year>2012</Year><RecNum>32</RecNum><record><rec-number>32</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639599">32</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Yong,Wang</author><author>Xinchen,Wang</author><author>Markus,Antonietti</author></authors></contributors><titles><title>Polymericgraphiticcarbonnitrideasaheterogeneousorganocatalyst:fromphotochemistrytomultipurposecatalysistosustainablechemistry</title><secondary-title>AngewandteChemie</secondary-title></titles><periodical><full-title>AngewandteChemie</full-title></periodical><pages>68-89</pages><volume>51</volume><number>1</number><dates><year>2012</year></dates><urls></urls></record></Cite></EndNote>[28,37]。热聚合法目前在制备合成方法中的比重逐渐重要，并且应用比较广泛。在材料的选取上，目前对以三聚氰胺、二聚氰胺和尿素作为前驱体，热聚合的方法制备g-C3N4的报道比较多，用该方法制备得到的材料聚合度较高ADDINEN.CITE<EndNote><Cite><Author>Jeffrey</Author><Year>2011</Year><RecNum>42</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[38,39]</style></DisplayText><record><rec-number>42</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639837">42</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Jeffrey,Pyun</author></authors></contributors><titles><title>Grapheneoxideascatalyst:applicationofcarbonmaterialsbeyondnanotechnology</title><secondary-title>AngewandteChemieInternationalEdition</secondary-title></titles><periodical><full-title>AngewandteChemieInternationalEdition</full-title></periodical><pages>46-48</pages><volume>50</volume><number>1</number><dates><year>2011</year></dates><urls></urls><electronic-resource-num>10.1002/anie.201003897</electronic-resource-num></record></Cite><Cite><Author>万武波</Author><Year>2011</Year><RecNum>43</RecNum><record><rec-number>43</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639852">43</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>万武波</author><author>赵宗彬</author><author>范彦如</author><author>胡涵</author><author>周泉</author><author>邱介山</author></authors></contributors><titles><title>石墨烯衍生物的合成及应用</title><secondary-title>化学进展</secondary-title></titles><periodical><full-title>化学进展</full-title></periodical><pages>1883-1891</pages><volume>23</volume><number>9</number><dates><year>2011</year></dates><urls></urls><electronic-resource-num>CNKI:SUN:HXJZ.0.2011-09-008</electronic-resource-num></record></Cite></EndNote>[38,39]。Groenewolt和Antonietti等研究人员ADDINEN.CITE<EndNote><Cite><Author>Antonietti</Author><Year>2005</Year><RecNum>224</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[40]</style></DisplayText><record><rec-number>224</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617862389">224</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"size="100%">Groenewolt</style><styleface="normal"font="default"charset="134"size="100%">,M</style></author><author><styleface="normal"font="default"charset="134"size="100%">Antonietti,M</style></author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">Synthesisofg-C</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style><styleface="normal"font="default"size="100%">nanoparticlesinmesoporoussilicahostmatrices</style></title><secondary-title>AdvancedMaterials</secondary-title></titles><periodical><full-title>AdvancedMaterials</full-title></periodical><pages>1789-1792</pages><volume>17</volume><number>14</number><dates><year>2005</year></dates><urls></urls><electronic-resource-num>10.1002/adma.200401756.</electronic-resource-num></record></Cite></EndNote>[40]最早以双氰胺为原料，热聚合获得了石墨相氮化碳纳米颗粒。Holst和Gillan等相关学者ADDINEN.CITE<EndNote><Cite><Author>James</Author><Year>2008</Year><RecNum>225</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[41]</style></DisplayText><record><rec-number>225</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617862979">225</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"size="100%">James</style><styleface="normal"font="default"charset="134"size="100%">,RHolst</style></author><author><styleface="normal"font="default"charset="134"size="100%">Edward,GGillan</style></author></authors></contributors><titles><title>FromTriazinestoHeptazines:DecipheringtheLocalStructureofAmorphousNitrogen-RichCarbonNitrideMaterials</title><secondary-title>JournaloftheAmericanChemicalSociety</secondary-title></titles><periodical><full-title>JournaloftheAmericanChemicalSociety</full-title></periodical><pages>7373-9</pages><volume>130</volume><number>23</number><dates><year>2008</year></dates><urls><related-urls><url><styleface="underline"font="default"size="100%">/doi/pdf/10.1021/ja709992s</style></url></related-urls></urls><electronic-resource-num>10.1021/ja709992s</electronic-resource-num></record></Cite></EndNote>[41]以三氯氰胺为原料，加热聚合制备得到了含有七嗪结构单元的石墨相氮化碳g-C3N4材料。图1-SEQ图1-\*ARABIC4三聚氰胺、氰胺、二氰胺、尿素和硫脲等不同前驱体热聚合合成g-C3N4的工艺示意图。黑色、蓝色、白色、红色和黄色的球分别表示C、N、H、O和S原子ADDINEN.CITE<EndNote><Cite><Author>Ong</Author><Year>2016</Year><RecNum>112</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[42]</style></DisplayText><record><rec-number>112</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617687628">112</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Ong,Wee-Jun</author><author>Tan,Lling-Lling</author><author>Ng,YunHau</author><author>Yong,Siek-Ting</author><author>Chai,Siang-Piao</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">GraphiticCarbonNitride(g-C</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style><styleface="normal"font="default"size="100%">)-BasedPhotocatalystsforArtificialPhotosynthesisandEnvironmentalRemediation:AreWeaStepCloserToAchievingSustainability?</style></title><secondary-title>ChemicalReviews</secondary-title></titles><periodical><full-title>ChemicalReviews</full-title></periodical><pages>7159-7329</pages><volume>116</volume><number>12</number><dates><year>2016</year><pub-dates><date>Jun22</date></pub-dates></dates><isbn>0009-2665</isbn><accession-num>WOS:000378585000006</accession-num><urls><related-urls><url><GotoISI>://WOS:000378585000006</url></related-urls></urls><electronic-resource-num>10.1021/acs.chemrev.6b00075</electronic-resource-num></record></Cite></EndNote>[42]Figure1-4Schematicillustrationofthesynthesisprocessofg-C3N4

bythermalpolymerizationofdifferentprecursorssuchasmelamine,cyanamide,dicyanamide,urea,andthiourea.Theblack,blue,white,red,andyellowballsdenoteC,N,H,O,andSatoms,respectively电化学沉积法通过施加直流电的方式沉积法制备g-C3N4，该电化学沉积法目前已经得到了广泛的应用。Zhang等人ADDINEN.CITE<EndNote><Cite><Author>Haitao</Author><Year>2015</Year><RecNum>237</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[43]</style></DisplayText><record><rec-number>237</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617949969">237</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"charset="134"size="100%">Lu</style><styleface="normal"font="default"size="100%">Qiujun</style></author><author><styleface="normal"font="default"charset="134"size="100%">DengJianhui</style></author><author><styleface="normal"font="default"charset="134"size="100%">HouYuxin</style></author><author><styleface="normal"font="default"charset="134"size="100%">WangHaiyan</style></author><author><styleface="normal"font="default"charset="134"size="100%">LiHaitao</style></author></authors></contributors><titles><title>One-stepelectrochemicalsynthesisofultrathingraphiticcarbonnitridenanosheetsandtheirapplicationtothedetectionofuricacid</title><secondary-title>Chemicalcommunications</secondary-title></titles><periodical><full-title>ChemicalCommunications</full-title></periodical><pages>12251-12253</pages><volume>51</volume><number>61</number><dates><year>2015</year></dates><urls></urls></record></Cite></EndNote>[43]通过电化学方法合成了片层极其薄的g-C3N4纳米结构。在直流电的作用条件下，研究人员探究了在不同酸碱性的环境中g-C3N4的制备情况以及多种应用的可能性ADDINEN.CITE<EndNote><Cite><Author>Deng</Author><Year>2014</Year><RecNum>238</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[44]</style></DisplayText><record><rec-number>238</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617950495">238</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Deng,Jianhui</author><author>Lu,Qiujun</author><author>Mi,Naxiu</author><author>Li,Haitao</author><author>Liu,Meiling</author><author>Xu,Mancai</author><author>Tan,Liang</author><author>Xie,Qingji</author><author>Zhang,Youyu</author><author>Yao,Shouzhuo</author></authors></contributors><titles><title>Electrochemicalsynthesisofcarbonnanodotsdirectlyfromalcohols</title><secondary-title>Chemistry</secondary-title></titles><periodical><full-title>Chemistry</full-title></periodical><pages>4993-9</pages><volume>20</volume><number>17</number><dates><year>2014</year></dates><urls></urls><electronic-resource-num>10.1002/chem.201304869</electronic-resource-num></record></Cite></EndNote>[44]。Bai等人ADDINEN.CITE<EndNote><Cite><Author>Bai</Author><Year>2010</Year><RecNum>239</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[45]</style></DisplayText><record><rec-number>239</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617951755">239</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Bai,Xinjiao,</author><author>Li,Jie,</author><author>Cao,Chuanbao</author></authors></contributors><titles><title>Synthesisofhollowcarbonnitridemicrospheresbyanelectrodepositionmethod</title><secondary-title>Appliedsurfacescience</secondary-title></titles><periodical><full-title>AppliedSurfaceScience</full-title></periodical><pages>2327-2331</pages><volume>256</volume><number>8</number><dates><year>2010</year></dates><urls></urls><electronic-resource-num>10.1016/j.apsusc.2009.10.061</electronic-resource-num></record></Cite></EndNote>[45]也采用了电化学沉积法成功制备了空心纳米球结构的石墨相氮化碳。g-C3N4光催化剂的改性虽然g-C3N4是光催化中常用的光催化剂，但是纯g-C3N4的光催化效果并不能满足人们对其抱有的期待。为了提高纯g-C3N4的光催化活性，广大的研究者们致力于设计改性g-C3N4光催化剂材料，主要通过对纯g-C3N4的修饰手段的探索，来提高光催化剂表面反应的活性和选择性。目前常用的g-C3N4修饰方法包括非金属和金属掺杂以及半导体复合等。形貌/尺寸调控氮化碳的形貌一般呈现纳米尺寸的片状结构以及呈现规则的棒状结构等。对于不同形貌的光催化剂来说，它们的比表面积通常不一样。因此，由于形貌不同，光催化剂的表面上能用于反应的活性位点数量会有一定的差异。催化剂的比表面积也同时决定了污染物与催化剂的相互接触的反应面积。光催化剂在污染物的去除反应中，所起到的催化作用主要是由于活性位点数量的不同。而且，纳米尺寸范围的半导体光催化剂会发生量子尺寸效应，使得催化剂的氧化还原能力得到增强。PingNiu等人ADDINEN.CITE<EndNote><Cite><Author>Niu</Author><Year>2012</Year><RecNum>67</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[46]</style></DisplayText><record><rec-number>67</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617640445">67</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Niu,Ping</author><author>Zhang,Lili</author><author>Liu,Gang</author><author>Cheng,Hui-Ming</author></authors></contributors><titles><title>Graphene-LikeCarbonNitrideNanosheetsforImprovedPhotocatalyticActivities</title><secondary-title>AdvancedFunctionalMaterials</secondary-title></titles><periodical><full-title>AdvancedFunctionalMaterials</full-title></periodical><pages>4763-4770</pages><volume>22</volume><number>22</number><dates><year>2012</year><pub-dates><date>Nov21</date></pub-dates></dates><isbn>1616-301X</isbn><accession-num>WOS:000310966500013</accession-num><urls><related-urls><url><GotoISI>://WOS:000310966500013</url><url><styleface="underline"font="default"size="100%">/doi/abs/10.1002/adfm.201200922</style></url></related-urls></urls><electronic-resource-num>10.1002/adfm.201200922</electronic-resource-num></record></Cite></EndNote>[46]通过热氧化刻蚀方法将粗制材料g-C3N4的形貌通过剥离方式调控为薄层纳米片。掺杂非金属掺杂Liu等ADDINEN.CITE<EndNote><Cite><Author>Zheng</Author><Year>2012</Year><RecNum>44</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[47]</style></DisplayText><record><rec-number>44</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639884">44</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Zheng,Yao</author><author>Liu,Jian</author><author>Liang,Ji</author><author>Jaroniec,Mietek</author><author>Qiao,ShiZhang</author></authors></contributors><titles><title>Graphiticcarbonnitridematerials:Controllablesynthesisandapplicationsinfuelcellsandphotocatalysis</title><secondary-title>Energy&EnvironmentalScience</secondary-title></titles><periodical><full-title>Energy&EnvironmentalScience</full-title></periodical><pages>6717-6731</pages><volume>5</volume><number>5</number><dates><year>2012</year></dates><urls></urls></record></Cite></EndNote>[47]以H2S为硫源材料，成功合成了硫掺杂氮化碳材料，并使用各种表征手段证明，S元素与g-C3N4结构中的N元素发生的是取代反应。测试了各种不同波长的光源条件下硫掺杂氮化碳材料光分解水制氢的应用具有不同的的催化效率。Yan等人ADDINEN.CITE<EndNote><Cite><Author>Yan</Author><Year>2010</Year><RecNum>272</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[48]</style></DisplayText><record><rec-number>272</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1619464007">272</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"size="100%">Yan,SC</style><styleface="normal"font="default"charset="134"size="100%"></style></author><author><styleface="normal"font="default"charset="134"size="100%">Li,ZS</style></author><author><styleface="normal"font="default"charset="134"size="100%">Zou,ZG</style></author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">PhotodegradationofrhodamineBandmethylorangeoverboron</style><styleface="normal"font="default"charset="134"size="100%">-dopedg-C</style><styleface="subscript"font="default"charset="134"size="100%">3</style><styleface="normal"font="default"charset="134"size="100%">N</style><styleface="subscript"font="default"charset="134"size="100%">4</style><styleface="normal"font="default"charset="134"size="100%">undervisiblelightirradiation</style></title><secondary-title><styleface="normal"font="default"size="100%">LangmuirtheAcsJournalofSurfaces</style><styleface="normal"font="default"charset="134"size="100%">＆Colloids</style></secondary-title></titles><periodical><full-title>LangmuirtheAcsJournalofSurfaces＆Colloids</full-title></periodical><pages><styleface="normal"font="default"size="100%">3894-</style><styleface="normal"font="default"charset="134"size="100%">3901</style></pages><volume>26</volume><number>6</number><dates><year>2010</year></dates><urls></urls></record></Cite></EndNote>[48]合成了硼掺杂氮化碳材料，通过实现硼元素取代其结构单元上的氮元素，达到其提升光催化降解效率的目的。金属掺杂通过金属掺杂方法对g-C3N4改性的机理是以金属离子为活性中心，为待降解的污染物能够吸附在金属离子上面提供了更多的位点。金属元素修饰过的g-C3N4材料会在原来g-C3N4的能带间隙形成多个杂质能级，这就使得能量较低的光源也能激发出一定数量的电子，因此增加了能够发挥作用的光范围。金属掺杂会造成晶格缺陷，有利于使材料形成更多的活性中心。Subhajyot等ADDINEN.CITE<EndNote><Cite><Author>Gang</Author><Year>2010</Year><RecNum>45</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[49]</style></DisplayText><record><rec-number>45</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639908">45</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Gang,Liu</author><author>Ping,Niu</author><author>Chenghua,Sun</author><author>Smith,SeanC,</author><author>Zhigang,Chen</author><author>QingMax,LuGao</author><author>Hui-Ming,Cheng</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">Uniqueelectronicstructureinducedhighphotoreactivityofsulfur-dopedgraphiticC</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style></title><secondary-title>JournaloftheAmericanChemicalSociety</secondary-title></titles><periodical><full-title>JournaloftheAmericanChemicalSociety</full-title></periodical><pages>11642-11648</pages><volume>132</volume><number>33</number><dates><year>2010</year></dates><urls></urls></record></Cite></EndNote>[49]人在金属改性g-C3N4材料的研究中使用了一种更加简便的方法，实验中将一定数量的金属Au通过沉积沉淀的方法沉积到g-C3N4表面。Au改性后的g-C3N4表面积增大，对可见光的吸收也增强了，而且Au等其他粒子的共振效应会产生协同作用，使材料的光致发光强度大大降低。在光催化制氢反应中，Au修饰的g-C3N4可以调控Au的质量百分数在1wt%时，达到高于纯g-C3N4催化产氢量23倍的效果。郭磊等人合成CeO2，并与KOH处理的g-C3N4(CN-OH)纳米片进行复合，以2,4-二氯苯酚和六价铬Cr(VI)为目标污染物探究CN-OH/CeO2-NP复合材料的光催化性能，结果显示两种纯物质形的n-n型异质结复合物具有较窄的禁带宽度，这种变化有利于电子和空穴之间的分离以及各自的迁移，进而提高光催化活性。图1-SEQ图1-\*ARABIC5CN-OH/CeO2-NP复合材料的机理图Figure1-5ThesketchofCN-OH/CeO2-NPcomposite半导体复合有研究表明半导体材料能够增加光反应产物的产率和提高光催化效率，这主要归因于半导体材料具有的特殊能带结构。半导体材料在一定程度上能够使载流子更加容易分离，也能够使光响应的范围扩大，这些都能够促使光催化性能提高ADDINEN.CITE<EndNote><Cite><Author>Samanta</Author><Year>2014</Year><RecNum>46</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[50]</style></DisplayText><record><rec-number>46</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639926">46</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Samanta,Subhajyoti</author><author>Martha,Satyabadi</author><author>Parida,Kulamani</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">FacileSynthesisofAu/g-C</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style><styleface="normal"font="default"size="100%">Nanocomposites:AnInorganic/OrganicHybridPlasmonicPhotocatalystwithEnhancedHydrogenGasEvolutionUnderVisible-LightIrradiation</style></title><secondary-title>Chemcatchem</secondary-title></titles><periodical><full-title>Chemcatchem</full-title></periodical><pages>1453-1462</pages><volume>6</volume><number>5</number><dates><year>2014</year></dates><urls></urls></record></Cite></EndNote>[50]。(1)宽带隙半导体复合根据前人的研究经验ADDINEN.CITE<EndNote><Cite><Year>2012</Year><RecNum>47</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[51]</style></DisplayText><record><rec-number>47</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639947">47</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"charset="134"size="100%">郑华荣,</style></author><author><styleface="normal"font="default"charset="134"size="100%">张金水,</style></author><author><styleface="normal"font="default"charset="134"size="100%">王心晨,</style></author><author><styleface="normal"font="default"charset="134"size="100%">付贤智</style></author></authors></contributors><titles><title>二氨基马来腈共聚合改性氮化碳光催化剂</title><secondary-title>物理化学学报</secondary-title></titles><periodical><full-title>物理化学学报</full-title></periodical><pages>2336-2342</pages><volume>28</volume><number>10</number><dates><year>2012</year></dates><urls></urls></record></Cite></EndNote>[51]可以知道，与具有较宽带隙的半导体复合能够很大程度上提升所研究半导体的光催化活性。科研工作者们会首先筛选具有合适的禁带宽度的半导体材料并确定下来，再通过探究各种不同实验的方法以及实验条件，来完成与待研究的半导体复合的目的。举例来讲，将禁带比较宽的半导体材料与g-C3N4材料复合形成异质结，使g-C3N4的载流子之间的相互复合被抑制，增强在催化活性。张泽君等ADDINEN.CITE<EndNote><Cite><Author>Shen</Author><Year>2014</Year><RecNum>49</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[52]</style></DisplayText><record><rec-number>49</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617639994">49</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Shen,Jianchao</author><author>Hui,Yang</author><author>Shen,Qianhong</author><author>Yu,Feng</author><author>Cai,Qifeng</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">Template-freepreparationandpropertiesofmesoporousg-C</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style><styleface="normal"font="default"size="100%">/TiO</style><styleface="subscript"font="default"size="100%">2</style><styleface="normal"font="default"size="100%">nanocompositephotocatalyst</style></title><secondary-title>Crystengcomm</secondary-title></titles><periodical><full-title>Crystengcomm</full-title></periodical><pages>1868-1872</pages><volume>16</volume><number>10</number><dates><year>2014</year></dates><urls></urls></record></Cite></EndNote>[52]人将通过g-C3N4半导体材料与宽带隙的ZnO半导体进行复合，从而大大增加g-C3N4半导体材料的光催化活性。(2)窄带隙半导体复合众多的科研创新团队也探究了与窄带隙半导体复合的相关光催化性能的变化。窄带隙半导体受可见光照射的情况下，也能欧同时产生电子/空穴对，激发产生的光生电子-空穴对可以在复合半导体之间进行转移及传输，像这种情况就能够在很大程度上抑制光生电子-空穴对之间的复合，从而提高光催化催化活性。最近，有研究还提出了Z-scheme载流子转移机制ADDINEN.CITE<EndNote><Cite><Author>张泽军</Author><Year>2013</Year><RecNum>50</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[53]</style></DisplayText><record><rec-number>50</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617640012">50</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>张泽军,</author><author>徐杨森,</author><author>张伟德</author></authors></contributors><titles><title><styleface="normal"font="default"size="100%">g-C</style><styleface="subscript"font="default"size="100%">3</style><styleface="normal"font="default"size="100%">N</style><styleface="subscript"font="default"size="100%">4</style><styleface="normal"font="default"size="100%">/ZnO复合光催化剂的制备及其可见光光催化性能的研究</style></title><secondary-title>广东化工</secondary-title></titles><periodical><full-title>广东化工</full-title></periodical><pages>3-4</pages><volume>40</volume><number>10</number><dates><year>2013</year></dates><urls></urls></record></Cite></EndNote>[53]。这种机制，不仅可以降低光生电子/空穴对的复合，同时还可以保持电子的高还原能为及空穴的高氧化能力，在降解难降解的污染物时仍具有较高的效率。Ashraf等ADDINEN.CITE<EndNote><Cite><Author>Akihide</Author><Year>2011</Year><RecNum>51</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[54]</style></DisplayText><record><rec-number>51</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1617640037">51</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Akihide,Iwase</author><author>Hau,NgYun</author><author>Yoshimi,Ishiguro</author><author>Akihiko,Kudo</author><author>Rose,Amal</author></authors></contributors><titles><title>Reducedgrapheneoxideasasolid-stateelectronmediatorinZ-schemephotocatalyticwatersplittingundervisiblelight</title><secondary-title>JournaloftheAmericanChemicalSociety</secondary-title></titles><periodical><full-title>JournaloftheAmericanChemicalSociety</full-title></periodical><pages>11054-11057</pages><volume>133</volume><number>29</number><dates><year>2011</year></dates><urls></urls></record></Cite></EndNote>[54]人将g-C3N4半导体材料与窄带隙的Ag3PO4半导体材料进行复合，并探究其具有最佳应用效率的组分比例。Di等人ADDINEN.CITE<EndNote><Cite><Author>Di</Author><Year>2014</Year><RecNum>267</RecNum><DisplayText><styleface="superscript"font="TimesNewRoman">[55]</style></DisplayText><record><rec-number>267</rec-number><foreign-keys><keyapp="EN"db-id="z2w5xdffzxvs20e2rpapptzbf5f5rpvxwse0"timestamp="1618818808">267<