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1 Pb freePb Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max VDSSID RDS(on) (m-ohm) Max 28 VGS = 10 V,ID=6.9A 55 VGS = -10V,ID=-3.5A 30V 6.9A 42 VGS = 4.5V,ID=5.0A -30V -3.5A80 VGS = -4.5V,ID=-2.5A Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage 20 20 V ID Drain Currenta 6.9 -3.5 A IDM Drain Currentb (Pulsed) *1 28 -26 A Is Drain-Source Diode Forward Current a 2.5 -2.3 A Total Power Dissipationa TA=25oC 2.0 2.0 PD Total Power Dissipationa TA=75oC 1.2 1.2 W Tj, Tstg Operating Junction and Storage Temperature Rangea -55 to +150 -55 to +150C RJA Thermal Resistance Junction to Ambienta 63.2 63.2 C/W a: Surface Mounted on FR4 Board , t 5sec . b: Pulse width limited by maximum junction temperature. Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 2 Pb freePb N-Channel Electrical Characteristics(TA=25C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max.Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 50 nAIGSS Gate-Body Leakage Current VGS=20V, VDS=0V - - 100 nA On Characteristicsc VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.0 1.4 3.0 V VGS=10V, ID= 6.9A - 23 28 RDS(on) Drain-Source On-State Resistance VGS=4.5V, ID= 5.0A - 37 42 m gfs Forward Transconductance VDS=5V, ID= 5.0A - 6.0 - S Dynamic Characteristics d Ciss Input Capacitance - 398 - Coss Output Capacitance - 67 - Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz - 61 - pF Switching Characteristicsd Qg Total Gate Charge - 7.4 - Qgs Gate-Source Charge - 1.7 - Qgd Gate-Drain Charge VDS=10V, ID=1A, VGS=10V - 1.3 - nC td(on) Turn-on Delay Time - 8.0 - tr Turn-on Rise Time - 11.2 - td(off) Turn-off Delay Time - 17.2 - tf Turn-off Fall Time VDD= 15V, RL=15, ID=1A, VGEN=10V, RG=6 - 7.54 - nS Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.5A - - 1.3 V Note: b: Pulse width limited by maximum junction temperature. c: Guaranteed by design , not subject to production testing . Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 3 Pb freePb P-Channel Electrical Characteristics (TA=25C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max.Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -50 nAIGSS Gate-Body Leakage Current VGS=20V, VDS=0V - - 100 nA On Characteristicsc VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 -1.3 -2.0 V VGS=-10V, ID=-3.5A - 50 55 RDS(on) Drain-Source On-State Resistance VGS=-4.5V, ID=-2.5A - 75 80 m gfs Forward Transconductance VDS=-10V, ID=-6.0A - 12.7 - S Dynamic Characteristics d Ciss Input Capacitance - 930 - Coss Output Capacitance - 121 - Crss Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHz - 102 - pF Switching Characteristicsd Qg Total Gate Charge - 20 - Qgs Gate-Source Charge - 4.1 - Qgd Gate-Drain Charge VDS=-15V, ID=-3A, VGS=-10V - 2.6 - nC td(on) Turn-on Delay Time - 9.5 - tr Turn-on Rise Time - 5.4 - td(off) Turn-off Delay Time - 42.5 - tf Turn-off Fall Time VDD=-15V, RL=5, ID=-3A, VGEN=-10V, RG=6 - 13.6 - nS Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-2.3A - - -1.2 V Note: b: Pulse width limited by maximum junction temperature. c: Guaranteed by design , not subject to production testing . Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 4 Pb freePb Characteristics Curve(N-Channel) Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 5 Pb freePb Characteristics Curve(N-Channel) Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 6 Pb freePb
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