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引线键合的低成本分析 Equipment for Electronic Products ManufacturingEPE（总第 160期） May.2008引线键合的低成本解决方案 Jong-Soo Cho,Jeong-Tak,Moon(R&D,MK Electron Co.,Ltd.Korea,449-812)摘要 :最近 ,金价不断上涨突破了 35.4 美元 /g,同时半导体产品特别是存储器类产品的价格却不断下降。目前半导体行业最大的挑战是如何控制并降低成本。为了降低引线键合的原材料成本 ,近年来金 -银合金 引线已被开始用来替代金线键合。但是 ,由于金 -银合金引线键合的器件在测试中出现的故障 ,不能用于在高湿度环境下进行可靠性测试 (例如 PCT 测试 )的器件 ,使其在应用上受到限制。研究了传统 Au-Ag合金引线键合的电子器件在 PCT测试时所产生的故障机理和钯元素的作用 ,通过在 Au-Ag 合金引线中掺入 (Pd)钯元素来阻止在高湿度环境下进行可靠性测试时出现的故障。关键词 :Au-Ag合金引线 ;PCT(高压炉测试 );潮湿度 ;可靠性 1介绍 金被广泛的作为半导体封装的引线键合。然而，为了降低半导体工业的成本，用其它廉价的金属线替代金线成为一个严峻的问题。金和银能纯粹的溶解，使高容量的银作为合金成分加入金成为可能，因此可以节约半导体封装中的金属线成本。这个众所周知，然而，金银球与铝垫之间连接的退化是一个严峻的问题。湿度可靠性问题在金银合金中起的障碍作用给半导体封装减低成本带来了困难。有两个问题需要考虑：（ 1）为什么金银球与铝材料的粘合能力在湿度测试中如此脆弱。（ 2）在金银合金线中用 Pd元素解决湿度可靠性中未实现的问题。 2讨论与结果 2.1 FAB的三种形状：第一种连接、第二种连接、环状连接 电子扫描显微 镜图象监测查出在图 1中不论是自由气球连接第一种连接、第二类针脚连接还是环状都有优点和缺点。结果是，我们需要的是在所有情况下都不会出现问题的类型。 2.2高压炉测试后的连接能力 4N 的金、含 15%的银的金、含 15%银和 5%钯的金三种金属线（直径均为 20微米）以球形方式连接到铝上面。使这三种样例作用在 JESD 22-A102，高压炉条件下（ 121 摄氏度， 204.9X10（ -3）兆帕 100%RH） 在图 2中显示了垂直线描述了连接拉力测试水平，水平线描述了高压炉测试的持续时间。查看图表 可以看出含银 15%的金的的金属线和纯金的金属线对比高压炉测试 24小时后连接拉力水平大幅度下降。再次进行对比，金含量为 99.99%的金属线和含！金中含 15%银5%钯的金属线，同样条件下，他们保持了原来的连接拉力水平。 nts 因此，我们知道钯元素可以减缓含 15%银的金线在高压炉测试中连接力的降低。 图 3 显示了球形扭转测试结果，在含银 15%的金线中，球形扭转测试水平和图 2 中的连接拉力测试水平相比较下降缓慢。但总体趋势和图 2 中的连接拉力测试水平几乎相似。 图 4 反映出了含银 15%金线与铝垫分界面经过高压炉测试后的电子发射扫描显微镜图像，查看图片可以发现在铝垫上有金属化合复合物。这就是观测到的黑色线条，含银 15%的金线与金银铝复合物之间的微小裂缝。 图 5 显示了这条线沿着电子发射扫描显微镜图像中的红线经过电子数据测试后的扫描分析，分析还显示了氧、铝、金、银四种元素。作为一个显著的结果，我们可以发现氧气高峰和铝高峰周围是裂缝较多的区域。从裂缝周围的铝氧化物，我们可以猜想裂缝是由铝氧化物引起的。氧化层与裂缝发生的原因是电流腐蚀，即银的移动现象。 图 6显示了含银 15%的金线之 间经过电子射线显微镜图像与经过电子能量损失光谱仪绘制的氧的图像的分界面。观测到 IMC的厚度在 50至 100纳米之间，裂缝在 10 至30纳米之间。 经过电子能量损失光谱仪分绘制的氧元素都分布在裂缝的区域，因此裂缝是由腐蚀导致这个结论再次被证实。 图 7显示了电子射线显微镜和电子能量损失光谱仪分析钯元素对含银 15%钯 5%的金线球与铝材料分界面经过高压炉 96小时测试后的影响。 查看电子射线显微镜和电子能量损失光谱仪图像可nts 以发现更稀少的金属复合物还有更少氧与没有钯元素之间的比较。测量 得到 IMC的厚度在 20至 30纳米之间，并且在电子射线显微镜图像中没有发现裂缝。 因此，在含银 15%的金线中加入钯会使形成的金属氧化复合物和氧更少，并且没有裂缝。 3 结论 3.1 含银 15%的金线连接到铝垫的情况 （ 1）高压炉测试使得连接强度大幅下降 （ 2）铝氧化层的形成会导致裂缝产生，导致连接能力下降 （ 3）氧化物形成与裂缝产生的原因是电流腐蚀。在高温和高湿度条件下，银会产生移动现象 3.2在含银 15%d的金线中加入钯的情况 （ 1）在含银 15%的金线中加入钯会改善连接能力的在高压炉测试后的大幅下降 （ 2）加入钯使得 IMC的产生更少，并且可以防止氧化层的形成 nts 毕业设计（论文）外文翻译 题目 面向 LED 封装的 XY 二自由度的工作台的设计 专 业 名 称 机械设计制造及其自动化 班 级 学 号 078105213 学 生 姓 名 贾辰光 指 导 教 师 张 绪 坤 nts Low Cost Solution for Bonding Wire Jong-Soo Cho,Jeong-Tak,Moon(R&D,MK Electron Co.,Ltd.Korea,449-812)Abstract:Recently,gold price is going up to over 1,000USD and the price of semiconductor device thatis especially memory device is going down.In semiconductor industry,major concern is cost reduction.To reduce material cost of bonding wire,Au-Ag alloy wire has been tried to be used in electronic de-vices in substitution for Au wire,since several years ago.However,Au-Ag alloy wire could not been ap-plied to such devices due to failures during high humidity reliability test such as PCT(Pressure cookertest).This study investigates failure mechanism during PCT in electronic device of conventional Au-Agwire,the effects of the element(Pd)that was put into Au-Ag wire to prevent the humidity reliability test(PCT)failure.Keywords:Au-Ag wire;PCT(Pressure Cooker Test);Humidity;Reliability收稿日期 :2008-04-15封装与测试 60 电子工业专用设备 Equipment for Electronic Products ManufacturingEPEMay.2008（总第 160期） 1 Introduction Au has been used as bonding wire for semicon-ductor packaging generally.however,in order to re-duce cost in the semiconductor industries,substitutionfor the gold wire by some other low cost wire has be-come a critical issue.As Gold and Silver form com-plete solid solution,it make it possible that Ag ofhigh contents is alloyed to Au,therefore it can savewire cost for semiconductor package.It has reported,however,that degradation of thebond between Au-Ag ball and Al pad is critical prob-lem.These humidity reliability problem acts as thebarrier for the application of Ag alloyed Au wire tosemiconductor package in spite of low cost.The purpose of current paper is to study(1)whybondability between Au-Ag ball and Al metallizationis weakened during humidity test(2)the influence ofPd element alloying on Au-Ag wire to solve the fail-ure problem during humidity reliability. 2 Result and Discussion 2.1 The shapes of FAB,1st Bond, 2nd Bonds,Looping SEM images were observed to check out whether 。 Free Air Ball,1st bonded ball,2nd stitch bond,loop-ing were good or not in Fig.1.As a result,It werechecked out that all conditions were no problem. 2.2 The Bondability after PCTAfter the three kinds of wires(Diameter:20m)-(1)4N ntsAu,(2)Au-15%Ag,(3)Au-15%Ag-5%Pd-on Al metallization were ball-bonded,the samplewere exposed under JESD 22-A102,PCT condition(at 121C,204.910-3 MPa,100%RH).It is shown in Fig.2 that vertical line representBPT(bond pull test)values,and horizontal line repre-sent PCT duration time.Inspection of this chart re-veal that BPT value was drastically decreased afterPCT for 24 h in case of Au-15%Ag,and it wasaround zero after 48 h PCT.On contrast,in case of4N Au(99.99%Au)and Au-15%Ag-5%Pd,it keptstable BPT values.As a result,we could find out preventing Pd ele-ment from bondability degradation of Au-15%Ag during PCT. Fig.3 shows ball shear test results.In case ofAu-15%Ag,BST values were dropped down slowly,compared with BPT valued in Fig.2,but overalltrends were almost similar to BPT values in Fig.2 STEM image of interface between Au-15%Agball and Al pad,after PCT(121C,204.910-3 MPa,100%RH,96h)is shown in Fig.4.Inspection of thisimage reveal that intermetallic compounds are formedin the region upper Al pad.It was observed that darkline,that is micro crack between Au-15%Ag andAu-Ag-Al intermetallic compounds. The Fig.5 shows the line scanning analysis byEDS along the red line in left first STEM image,and the analysis was performed for 4 elements that areOxygen,Aluminium,Gold,Silver.As a remarkable results,it could be detected that there is region whereOxygen peak and Al peak is high around crack. Judging from existence of Aluminium oxidearound the crack,it was inferred that the crack is gen-erated by Al-Oxide.Its considered that the reasonfor the oxide layer&crack occurrence is galvanic corrosion,Ag migration phenomena 2.3 TEM,EELS Analysis Fig.6 shows TEM(Transmission Electron Mi-croscopy)image&oxygen mapping image by EELS(Electron Energy Loss Spectrometer)for the interfacebetween Au-15%Ag wire.The thickness of IMC wasobserved around 50 100 nm,and that of crack wasaround 10 30 nm. ntsAs analyzed by EELS mapping,Oxygen elementis distributed along the crack region,therefore it couldbe acknowledged that the crack occurred by corrosionby this results again. It was shown that the TEM&EELS analysis re-sults to investigate the influence of Pd element on in-terface between Au-15%Ag-5%Pd ball and Al metal-lization,after PCT 96 h in Fig.7. Inspection of the TEM&EELS images revealthat it has thinner intermetallic compounds band andless Oxygen distribution compared with case withoutPd element.The thickness of IMC was measured tobe around 20 30 nm,no c