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EnterpriseMOCVDTools InnovativeSolutionsforHighVolumeProduction企业型MOCVD设备 大规模生产的创新解决方案GaNzilla E300LDM E450LDM TurboDiscOperations EnterpriseIntroduction FullyconfiguredforlargescalecompoundsemiconductorproductionBasedontherenownedVeecoTurboDisc platformEnablescost effectivedevicesolutionsKeyadvantagesinclude HighthroughputproductioncapacityLowrunningcostsLowmaintenancerequirements TurboDiscOperations EnterpriseApplications Applications VCSELs LaserDiodes CD DVDLasers HB ROYLEDs pHEMTS HBTs FETs SolarCells Materials InGaAsP InGaAlP AlGaAs InGaAsP InGaAlP AlGaAs InGaP VeecoTool E300LDME450LDM E450LDM GaNzilla forproductionofGaN baseddevicesE300LDM idealforlongwavelength infrared andvisiblelasersE450LDM Veeco slargestcapacityMOCVDsystem Blue Green UVLEDs BlueLasers FETs AlGaN InGaN E300GaNzilla TurboDiscOperations SubstantialCustomerBase Morethan500TurboDiscMOCVDsystemshavebeensold ofwhichgreaterthan95 aremulti waferManyoftheworld sleadingcompoundsemiconductorcompanies includingLumileds UEC andHoneywell haverepeatedlypurchasedTurboDiscsystemsasthebackboneoftheirproductioncapacityVeecosystemsarewidelyusedforbothR Dandhighvolumeproductionofqualitydevices TurboDiscOperations GlobalProductionCustomers ChinaPodiumShandongHuagongShanghaiLanBaoTIPSXiamenSananTaiwanEpistarForEpiHighlinkTechHugaSouthEpitaxyUECUniLightKoreaEpiplusLGSamsung JapanJVCMatsushitaRohmSeiwaElectricSharpNorthAmericaEmcoreHoneywellLumiledsSpectrolabsConfidentialLEDCo EuropeInfineonOsram TurboDiscGaNzilla InnovativeSolutionsforGaNMaterialProduction TurboDiscOperations GaNzillaIntroduction Veeco sE300GaNzillaisafullyconfiguredMOCVDtoolforlargescaleproductionofgreen blue andUVLEDs GaNFETs andbluespectrumlasersBasedontherenownedEnterpriseplatform theGaNzillaisanadvancedproductiontoolenablingcosteffectiveGaNdevicesolutionsKeyadvantagesinclude HighestthroughputavailableLowestrunningcostsLowmaintenancerequirementsMaximummaterialefficiency TurboDiscOperations E300GaNzillaTool TurboDiscOperations TurboDiscFlowFlange SimpleDesignFlangemechanicallymachinedforeasyassemblyDualo ringsealforimprovedleakpreventionTemperaturecontrolledtoapproximately45 CatalltimesSmallnumberofmaincomponentsleadstobetterreproducibilityaftermaintenance TurboDiscOperations GaNzillaLoadlock HighThroughputOperationLoadlocksystemallowsmaximumpossibleproductiontimeLessthan8minutesbetweenrunsReststationforrapidcarriertransferto fromgrowthchamberReactorremainsisolatedfromatmosphereatalltimesRobotictransferprovidessmoothoperation TurboDiscOperations RemovablePlatterAdvantages Canbecleanedthoroughlybythermal mechanical orchemicalmeansCriticalforAlGaNgrowthsinceAlcannotbecompletelyremovedbysimpleheatingExternalplattercleaning higherthroughput 21x2 TurboDiscOperations GaNzillaPerformance TurboDiscOperations HighSiDopedGaNSheetResistanceUniformity n 6e18cm 3m 240cm2 v s Averagevalue Maximumvalue Minimumvalue Std dev value Waferuniformityvalue 13 78W square14 11W square13 34W square0 14W square1 0 TurboDiscOperations 002 XRDDatafrom510nmInGaNMQWStructure 5xquantumwells SharpInterfaces TurboDiscOperations GreenLEDWafer to WaferUniformity Wafer 1464aWavelengthAverage 523 1 Wafer 1464tWavelengthAverage 522 2 Wafer 1464hWavelengthAverage 522 1 Wafer 1464dWavelengthAverage 523 9 outer outer outer inner AverageWafer to WaferUniformity 522 8nm 0 9 Run 1464 TurboDiscOperations GreenLEDWafer to WaferUniformity Wafer 1466bWavelengthAverage 524 3 Wafer 1466uWavelengthAverage 522 8 Wafer 1466hWavelengthAverage 522 4 Wafer 1466cWavelengthAverage 525 7 outer outer outer inner AverageWafer to WaferUniformity 523 8nm 1 6nm Run 1466 TurboDiscOperations GaNzillaFullPlatterBlueLEDRun ABCDEFGHIJKLMNOPQRSTU Peak nm 472470471469471470470 471470475471470470470469469470472 472 A B P D Q E R F L U J I C O N M G H S T K InnerRing OuterRing FullPlatterStd Dev 1 42nmMeanOuter470 8MeanInner470 3 Note WafersHandTwereusedfordestructivetesting TurboDiscOperations PLUniformityofFullBlueLED 470nm Structure Excellentwavelengthuniformityat470nm 1 09nm TurboDiscOperations ThroughputandYieldDrivers Veeco sEnterprisesystemshavetheindustry shighestthroughputLessthan8minutesbetweenrunsHighgrowthratesandfasttemperaturerampingHighthroughput highyielddueto RealTemp200in situmonitoringVacuumloadlockAutomatedwafertransferReactordesignLowmaintenance TurboDiscOperations Conclusions HighestthroughputGaNproductiontoolavailableVeecotoolsareusedinproduc
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